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    3F SERIES SURFACE MOUNT TRANSISTOR Search Results

    3F SERIES SURFACE MOUNT TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    3F SERIES SURFACE MOUNT TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BC857

    Abstract: transistor marking code 3f series surface mount transistor marking code sot BC856 BC857B 3F MARKING CODE 3J BC857C 3g marking code transistor marking codes
    Text: Central BC856 SERIES BC857 SERIES BC858 SERIES TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR BC856, BC857 and BC858 Series types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for general purpose switching


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    PDF BC856 BC857 BC858 BC856, OT-23 BC856B BC857B BC858B transistor marking code 3f series surface mount transistor marking code sot BC857B 3F MARKING CODE 3J BC857C 3g marking code transistor marking codes

    Untitled

    Abstract: No abstract text available
    Text: BC856 SERIES BC857 SERIES BC858 SERIES SURFACE MOUNT PNP SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BC856, BC857 and BC858 Series types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy


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    PDF BC856 BC857 BC858 BC856, BC857 OT-23 BC856B BC857B BC858B

    marking code r2

    Abstract: BC856 BC857 BC858 transistor NF marking code BC856B BC856A BC857A BC857B BC857C
    Text: BC856 SERIES BC857 SERIES BC858 SERIES SURFACE MOUNT PNP SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BC856, BC857 and BC858 Series types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy


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    PDF BC856 BC857 BC858 BC856, BC857 OT-23 IEB125 BC856B BC857B marking code r2 transistor NF marking code BC856B BC856A BC857A BC857B BC857C

    BC557 transistor

    Abstract: MARKING 3F TRANSISTOR BC858CDW1T1
    Text: BC857BDW1T1, BC857CDW1T1, BC858BDW1T1, BC858CDW1T1 Preferred Devices Dual General Purpose http://onsemi.com Transistors PNP Duals 3 These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is


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    PDF BC857BDW1T1, BC857CDW1T1, BC858BDW1T1, BC858CDW1T1 363/SC BC857BDW1T1 BC857CDW1T1 BC858BDW1T1 BC857 BC557 transistor MARKING 3F TRANSISTOR BC858CDW1T1

    BC858CDW1T1

    Abstract: No abstract text available
    Text: BC857BDW1T1, BC857CDW1T1, BC858BDW1T1, BC858CDW1T1 Preferred Devices Dual General Purpose http://onsemi.com Transistors PNP Duals 3 These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is


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    PDF BC857BDW1T1, BC857CDW1T1, BC858BDW1T1, BC858CDW1T1 363/SC BC857BDW1T1 BC857CDW1T1 BC858BDW1T1 BC857 BC858CDW1T1

    BC557

    Abstract: No abstract text available
    Text: BC856ALT1 Series Preferred Devices General Purpose Transistors PNP Silicon MAXIMUM RATINGS TA = 25°C unless otherwise noted Symbol Value Unit Collector-Emitter Voltage VCEO –65 –45 –30 V Collector-Base Voltage VCBO –80 –50 –30 V VEBO –5.0


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    PDF BC856ALT1 BC856 BC857 BC858, BC859 r14525 BC557

    BC557 sot-23

    Abstract: BC556 sot package sot-23 BC557 sot package sot-23 BC857A BC857b difference bc557 package sot23 BC857 sot package sot-23 mark 5c SOT-23 BC557 sot package SOT-23 3a SOT-23 3B
    Text: BC856ALT1 Series Preferred Devices General Purpose Transistors PNP Silicon MAXIMUM RATINGS TA = 25°C unless otherwise noted Symbol Value Unit Collector-Emitter Voltage VCEO -65 -45 -30 V Collector-Base Voltage VCBO -80 -50 -30 V VEBO -5.0 V IC -100 mAdc


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    PDF BC856ALT1 BC856 BC857 BC858, BC859 BC856ALT1/D BC557 sot-23 BC556 sot package sot-23 BC557 sot package sot-23 BC857A BC857b difference bc557 package sot23 BC857 sot package sot-23 mark 5c SOT-23 BC557 sot package SOT-23 3a SOT-23 3B

    420 sot-363

    Abstract: SOT363 footprint marking code 12 SOT-363 amplifier marking code 04 sot-363 SOT363 MARKING 3B BC857 SOT363 BC557 bc556 information of BC557 3f L series surface mount transistor BC858CDW1T1
    Text: BC856BDW1T1, BC857BDW1T1, BC857CDW1T1, BC858BDW1T1, BC858CDW1T1 Preferred Devices http://onsemi.com Dual General Purpose Transistors 3 PNP Duals (2) (1) Q1 These transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is


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    PDF BC856BDW1T1, BC857BDW1T1, BC857CDW1T1, BC858BDW1T1, BC858CDW1T1 OT-363/SC-88 BC856BDW1T1 BC857BDW1T1 BC857CDW1T1 BC858BDW1T1 420 sot-363 SOT363 footprint marking code 12 SOT-363 amplifier marking code 04 sot-363 SOT363 MARKING 3B BC857 SOT363 BC557 bc556 information of BC557 3f L series surface mount transistor BC858CDW1T1

    BC557 bc556

    Abstract: No abstract text available
    Text: BC857BTT1, BC857CTT1 Preferred Devices General Purpose Transistor PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT−416/SC−75 which is designed for low power surface mount applications. http://onsemi.com


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    PDF BC857BTT1, BC857CTT1 OT-416/SC-75 BC857BTT1 BC857BTT1G BC857CTT1 OT-416 OT-416 BRD8011/D. BC557 bc556

    sot-323 transistor marking code 15

    Abstract: ic marking code pk MARKING 3b BC857BWT1G FOR 3B
    Text: BC856BWT1 Series, BC857BWT1 Series, BC858AWT1 Series Preferred Devices General Purpose Transistors http://onsemi.com PNP Silicon COLLECTOR 3 These transistors are designed for general purpose amplifier applications. They are housed in the SC−70/SOT−323 which is


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    PDF BC856BWT1 BC857BWT1 BC858AWT1 SC-70/SOT-323 BC856 BC857 BC858 sot-323 transistor marking code 15 ic marking code pk MARKING 3b BC857BWT1G FOR 3B

    SE135N

    Abstract: SE110N UX-C2B SE140N STR83159 SE130N STR2012 Transistor AC 51 SE140 SE115N
    Text: Type No. Type Type No. Type Index Type No. Order 57 Index (Type No. Order) Type No. Type 2SA1186 2SA1215 Transistors for Audio Amplifier (LAPT) 2SA1216 2SA1262 2SA1294 2SA1295 2SA1303 2SA1386 2SA1488 2SA1492 2SA1493 2SA1494 2SA1567 2SA1568 2SA1667 2SA1668


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    PDF 2SA1186 2SA1215 2SA1216 2SA1262 2SA1294 2SA1295 2SA1303 2SA1386 2SA1488 2SA1492 SE135N SE110N UX-C2B SE140N STR83159 SE130N STR2012 Transistor AC 51 SE140 SE115N

    difference between bc856a bc856b

    Abstract: 3f series surface mount transistor BC856 BC856AWT1 BC856BWT1 BC857 BC857BWT1 BC857CWT1 BC858 BC858AWT1
    Text: BC856AWT1 Series, BC857BWT1 Series, BC858AWT1 Series Preferred Devices General Purpose Transistors http://onsemi.com PNP Silicon COLLECTOR 3 These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 which is


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    PDF BC856AWT1 BC857BWT1 BC858AWT1 323/SC BC856AWT1 BC856BWT1 BC857BWT1 BC857CWT1 BC858AWT1 BC858BWT1 difference between bc856a bc856b 3f series surface mount transistor BC856 BC856BWT1 BC857 BC857CWT1 BC858

    BC858CDW1T1

    Abstract: BC856 BC856BDW1T1 BC857 BC857BDW1T1 BC857CDW1T1 BC858 BC858BDW1T1 operation of BC557 TRANSISTOR
    Text: BC856BDW1T1, BC857BDW1T1 Series, BC858BDW1T1 Series Preferred Devices Dual General Purpose Transistors http://onsemi.com PNP Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is


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    PDF BC856BDW1T1, BC857BDW1T1 BC858BDW1T1 363/SC BC856BDW1T1 BC857BDW1T1 BC857CDW1T1 BC858BDW1T1 BC858CDW1T1 BC856 BC858CDW1T1 BC856 BC856BDW1T1 BC857 BC857CDW1T1 BC858 operation of BC557 TRANSISTOR

    3F SOT3

    Abstract: bc557 3f series surface mount transistor BC858CDW1T1
    Text: BC856BDW1T1, BC857BDW1T1, BC857CDW1T1, BC858BDW1T1, BC858CDW1T1 Preferred Devices http://onsemi.com Dual General Purpose Transistors 3 PNP Duals (2) (1) Q1 These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is


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    PDF BC856BDW1T1, BC857BDW1T1, BC857CDW1T1, BC858BDW1T1, BC858CDW1T1 363/SC BC856BDW1T1 BC857BDW1T1 BC857CDW1T1 BC858BDW1T1 3F SOT3 bc557 3f series surface mount transistor BC858CDW1T1

    BC857CTT1

    Abstract: BC556 BC557 BC558 BC857 BC857B BC857BTT1 BC857C BC857BTT1G
    Text: BC857BTT1, BC857CTT1 Preferred Devices General Purpose Transistor PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT−416/SC−75 which is designed for low power surface mount applications. http://onsemi.com


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    PDF BC857BTT1, BC857CTT1 OT-416/SC-75 BC857BTT1/D BC857CTT1 BC556 BC557 BC558 BC857 BC857B BC857BTT1 BC857C BC857BTT1G

    Untitled

    Abstract: No abstract text available
    Text: BC857BTT1, BC857CTT1 Preferred Devices General Purpose Transistor PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT−416/SC−75 which is designed for low power surface mount applications. http://onsemi.com


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    PDF BC857BTT1, BC857CTT1 416/SCâ BC857BTT1/D

    BC857B

    Abstract: BC857BTT1 BC857C BC857CTT1 BC556 BC557 BC558 BC857 of bc557
    Text: BC857BTT1, BC857CTT1 Preferred Devices Advance Information General Purpose Transistor PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT–416/SC–75 which is designed for low power surface mount applications.


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    PDF BC857BTT1, BC857CTT1 416/SC BC857BTT1 r14525 BC857BTT1/D BC857B BC857BTT1 BC857C BC857CTT1 BC556 BC557 BC558 BC857 of bc557

    BC856

    Abstract: BC856AWT1 BC856BWT1 BC857 BC857AWT1 BC857BWT1 BC858 BC858AWT1 BC858BWT1 transistor BC557 base collector emitter
    Text: MOTOROLA Order this document by BC856AWT1/D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors BC856AWT1,BWT1 PNP Silicon BC857AWT1,BWT1 These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 which is


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    PDF BC856AWT1/D BC856AWT1 BC857AWT1 323/SC BC858AWT1 BC856 BC857 BC858 BC856AWT1/D* BC856 BC856BWT1 BC857 BC857BWT1 BC858 BC858BWT1 transistor BC557 base collector emitter

    BC856

    Abstract: BC856AWT1 BC856BWT1 BC857 BC857AWT1 BC857BWT1 BC858 BC858AWT1 BC858BWT1 bc585a
    Text: MOTOROLA Order this document by BC856AWT1/D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors BC856AWT1,BWT1 PNP Silicon BC857AWT1,BWT1 These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 which is


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    PDF BC856AWT1/D BC856AWT1 BC857AWT1 323/SC BC858AWT1 BC856 BC857 BC858 BC856AWT1/D* BC856 BC856BWT1 BC857 BC857BWT1 BC858 BC858BWT1 bc585a

    b 514 transistor

    Abstract: 2SC SERIES SC marking code NPN transistor 2SC SERIES TRANSISTORS 2SC4102 2SC3906K TRANSISTOR 2SC transistor DJ marking 2SA1514K 2SA1579
    Text: 2SC3906K 2SC4102 Transistor, NPN Features Dimensions Units : mm available in SMT3 (SMT, SC-59) and UMT3 (UMT, SC-70) package 2SC3906K (SMT3) package marking: 2SC3906K and 2SC4102; T * , where ★ is hFE code high breakdown voltage, Vqeo = 120 V complementary pair with 2SA1514K


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    PDF 2SC3906K 2SC4102 SC-59) SC-70) 2SC4102; 2SA1514K 2SA1579 2SC3906K b 514 transistor 2SC SERIES SC marking code NPN transistor 2SC SERIES TRANSISTORS 2SC4102 TRANSISTOR 2SC transistor DJ marking 2SA1579

    Untitled

    Abstract: No abstract text available
    Text: 2SD1781K Transistor, NPN Features • available in SMT3 SMT, SC-59 package • package marking: 2SD1781K; AF-*, where ★ is hFE code • extremely low collector saturation voltage • even though it is in a small package, it can draw large currents Dimensions (Units : mm)


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    PDF 2SD1781K SC-59) 2SD1781K; Q16-o

    dtb123ek

    Abstract: No abstract text available
    Text: DTB123EK Digital transistor, PNP, with 2 resistors Features Dimensions Units : mm • available in SMT3 (SMT, SC-59) package • package marking: DTB123EK; F12 • a built-in bias resistor allows inverter circuit configuration without external input resistors


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    PDF DTB123EK SC-59) DTB123EK; DTB123EK

    Untitled

    Abstract: No abstract text available
    Text: MOT OROL A SC XSTRS/R F> 4bE b3b7S5M D QQIBTB? b «M O T bT Order this data sheet By MUN2211/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MUN2211 MUN2212 MUN2213 Bias Resistor Transistor NPN Silicon Surface Mount Transistor With Monolithic Bias Resistor Network


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    PDF MUN2211/D MUN2211 MUN2212 MUN2213

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by BC856ALT1/D SEMICONDUCTOR TECHNICAL DATA BC856ALT1 ,BLT1 BC857ALT1, BLT1,CLT1 BC858ALT1 ,BLT1, CLT1 General Purpose Transistors PNP Silicon BASE Motorola Preferred Devices 2 EMITTER MAXIMUM RATINGS Rating Symbol BC856 BC857


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    PDF BC856ALT1/D BC856ALT1 BC857ALT1, BC858ALT1 BC856 BC857 BC858 -236A OT-23 O-236AB)