M29DW324D
Abstract: M29DW324DB M29DW324DT TFBGA48 TFGBA48
Text: M29DW324DT M29DW324DB 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ■ – VPP =12V for Fast Program (optional)
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M29DW324DT
M29DW324DB
TSOP48
16Mbit
16Mbit
TFBGA63
M29DW324D
M29DW324DB
M29DW324DT
TFBGA48
TFGBA48
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S3FC40D
Abstract: IRR36 p64s CalmRISC-16
Text: S3CC40D/FC40D CalmRISC 16-BIT CMOS MICROCONTROLLERS USER'S MANUAL Revision 1 Important Notice The information in this publication has been carefully checked and is believed to be entirely accurate at the time of publication. Samsung assumes no responsibility, however, for possible errors or
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S3CC40D/FC40D
16-BIT
S3FC40D
IRR36
p64s
CalmRISC-16
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M29W320E
Abstract: M29W320EB M29W320ET TFBGA48
Text: M29W320ET M29W320EB 32 Mbit 4Mb x8 or 2Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional)
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M29W320ET
M29W320EB
M29W320E
M29W320EB
M29W320ET
TFBGA48
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IS1651
Abstract: M29DW323D M29DW323DB M29DW323DT TFBGA48
Text: M29DW323DT M29DW323DB 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional)
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M29DW323DT
M29DW323DB
24Mbit
IS1651
M29DW323D
M29DW323DB
M29DW323DT
TFBGA48
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Be 555
Abstract: No abstract text available
Text: M29DW324DT M29DW324DB 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional)
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M29DW324DT
M29DW324DB
16Mbit
16Mbit
Be 555
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Untitled
Abstract: No abstract text available
Text: M29DW323DT M29DW323DB 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional)
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M29DW323DT
M29DW323DB
24Mbit
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Untitled
Abstract: No abstract text available
Text: M29DW324DT M29DW324DB 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ ACCESS TIME: 70, 90ns
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M29DW324DT
M29DW324DB
TSOP48
16Mbit
16Mbit
TFBGA63
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M29W320E
Abstract: M29W320EB M29W320ET TFBGA48
Text: M29W320ET M29W320EB 32 Mbit 4Mb x8 or 2Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional)
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M29W320ET
M29W320EB
M29W320E
M29W320EB
M29W320ET
TFBGA48
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AI05
Abstract: No abstract text available
Text: M29DW323DT M29DW323DB 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block 3V Supply Flash Memory FEATURES SUMMARY SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional)
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M29DW323DT
M29DW323DB
24Mbit
AI05
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Untitled
Abstract: No abstract text available
Text: M29DW323DT M29DW323DB 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional)
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M29DW323DT
M29DW323DB
24Mbit
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S3FC34D
Abstract: CalmRISC-16
Text: S3CC34D/FC34D CalmRISC 16-BIT CMOS MICROCONTROLLERS USER'S MANUAL Revision 1.2 Important Notice The information in this publication has been carefully checked and is believed to be entirely accurate at the time of publication. Samsung assumes no responsibility, however, for possible errors or
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S3CC34D/FC34D
16-BIT
S3FC34D
CalmRISC-16
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s3cc
Abstract: S3CC34D calmRISC16 S3FC34D MP-64 MDS 2310 manual S3FC CalmRISC-16 SAMSUNG WAFER Date Code Formats samsung SSR
Text: S3CC34D/FC34D CalmRISC 16-BIT CMOS MICROCONTROLLERS USER'S MANUAL Revision 1 Important Notice The information in this publication has been carefully checked and is believed to be entirely accurate at the time of publication. Samsung assumes no responsibility, however, for possible errors or
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S3CC34D/FC34D
16-BIT
s3cc
S3CC34D
calmRISC16
S3FC34D
MP-64
MDS 2310 manual
S3FC
CalmRISC-16
SAMSUNG WAFER Date Code Formats
samsung SSR
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TFBGA48
Abstract: M29DW323D M29DW323DB M29DW323DT
Text: M29DW323DT M29DW323DB 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional)
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M29DW323DT
M29DW323DB
24Mbit
TFBGA48
M29DW323D
M29DW323DB
M29DW323DT
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mp9141
Abstract: S3FC11B calmRISC16 RP2D1 MP2338 ISO-14001 ADCON10 sd2150 CalmRISC-16 MAC2424
Text: S3CC11B/FC11B CalmRISC 16-Bit CMOS MICROCONTROLLER USER'S MANUAL Revision 1.20 Important Notice The information in this publication has been carefully checked and is believed to be entirely accurate at the time of publication. Samsung assumes no responsibility, however, for possible errors or
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S3CC11B/FC11B
16-Bit
mp9141
S3FC11B
calmRISC16
RP2D1
MP2338
ISO-14001
ADCON10
sd2150
CalmRISC-16
MAC2424
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120820
Abstract: M29DW323DB
Text: M29DW323DT M29DW323DB 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional)
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M29DW323DT
M29DW323DB
24Mbit
120820
M29DW323DB
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M29W320
Abstract: No abstract text available
Text: M29W320ET M29W320EB 32 Mbit 4Mbx8 or 2Mbx16, Uniform Parameter Blocks, Boot Block 3V supply Flash memory Feature summary • Supply voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Access times: 70, 90ns
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M29W320ET
M29W320EB
2Mbx16,
M29W320
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Untitled
Abstract: No abstract text available
Text: M29DW323DT M29DW323DB 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional)
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M29DW323DT
M29DW323DB
24Mbit
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Untitled
Abstract: No abstract text available
Text: M29DW324DT M29DW324DB 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ■ – VPP =12V for Fast Program (optional)
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M29DW324DT
M29DW324DB
TSOP48
16Mbit
16Mbit
TFBGA63
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S3FC34D
Abstract: S3FC calmRISC calm FM24653 ISO-14001 Calm16ASM calmRISC16 s3cc CalmRISC-16
Text: S3CC34D/FC34D CalmRISC 16-BIT CMOS MICROCONTROLLERS USER'S MANUAL Revision 1.30 Important Notice The information in this publication has been carefully checked and is believed to be entirely accurate at the time of publication. Samsung assumes no responsibility, however, for possible errors or
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S3CC34D/FC34D
16-BIT
S3CC34D/FC34D
S3FC34D
S3FC
calmRISC
calm
FM24653
ISO-14001
Calm16ASM
calmRISC16
s3cc
CalmRISC-16
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M29DW324D
Abstract: M29DW324DB M29DW324DT TFBGA48
Text: M29DW324DT M29DW324DB 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ■ – VPP =12V for Fast Program (optional) ACCESS TIME: 70, 90ns
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M29DW324DT
M29DW324DB
TSOP48
16Mbit
16Mbit
TFBGA63
M29DW324D
M29DW324DB
M29DW324DT
TFBGA48
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TFBGA63
Abstract: M29DW323D M29DW323DB M29DW323DT TFBGA48
Text: M29DW323DT M29DW323DB 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ■ – VPP =12V for Fast Program (optional) ACCESS TIME: 70, 90ns
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M29DW323DT
M29DW323DB
TSOP48
24Mbit
TFBGA63
TFBGA63
M29DW323D
M29DW323DB
M29DW323DT
TFBGA48
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Untitled
Abstract: No abstract text available
Text: M IT S U B IS H I M IC RO CO M PUTERS M37410M3-XXXFP.M37410M4-XXXFP M37410M6-XXXFP S IN G L E -C H IP 8 -B IT CM O S M IC R O C O M P U T E R DESCRIPTION PIN CONFIGURATION TOP VIEW The M 37410M 3-XXXFP is a s in g le -c h ip m icro com p uter d e signed w ith C M O S silicon gate technology. It is housed in a
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M37410M3-XXXFP
M37410M4-XXXFP
M37410M6-XXXFP
37410M
80-pin
200/i
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Untitled
Abstract: No abstract text available
Text: M IT S U B IS H I M ICRO CO M PUTERS M 37413M 4-X X X F P S IN G L E -C H IP 8 -B IT C M O S M IC R O C O M P U T E R DESCRIPTION P IN C O N F IG U R A T IO N T O P V IE W The M 37413M 4-XXXFP is a sin g le -c h ip m icro com p uter d e signe d w ith C M O S silicon ga te technology. It is housed in a
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37413M
80-pin
200/f
800/f
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L38A
Abstract: No abstract text available
Text: M IT S U B IS H I M IC RO CO M PUTERS M 37410M 3-XXXFP.M 37410M 4-XXXFP M37410M6-XXXFP SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER DESCRIPTION PIN CONFIGURATION TOP VIEW The M 37410M 3-XXXFP is a s in g le -c h ip m icro com p uter d e signe d w ith C M O S silicon gate technology. It is housed in a
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37410M
M37410M6-XXXFP
80-pin
800/f
L38A
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