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    3F001 Search Results

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    3F001 Price and Stock

    Panasonic Electronic Components ESE-23F001

    SWITCH DETECTOR SPDT 0.01A 5V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey ESE-23F001 Cut Tape 3,959 1
    • 1 $0.88
    • 10 $0.713
    • 100 $0.5784
    • 1000 $0.46612
    • 10000 $0.46612
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    ESE-23F001 Digi-Reel 3,959 1
    • 1 $0.88
    • 10 $0.713
    • 100 $0.5784
    • 1000 $0.46612
    • 10000 $0.46612
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    Mouser Electronics ESE-23F001
    • 1 $0.87
    • 10 $0.828
    • 100 $0.672
    • 1000 $0.526
    • 10000 $0.442
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    Newark ESE-23F001 Reel 4,000
    • 1 -
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    • 10000 $0.411
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    Master Electronics ESE-23F001
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    • 1000 $0.8034
    • 10000 $0.3836
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    TDK Electronics B57871L0103F001

    L871/10K/F1 1%
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    DigiKey B57871L0103F001 Bulk 3,000 1
    • 1 $2.34
    • 10 $2.34
    • 100 $1.4088
    • 1000 $1.11338
    • 10000 $1.025
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    TDK Electronics B57885S0103F001

    THERMISTOR NTC 10KOHM 3980K DISC
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    DigiKey B57885S0103F001 Bulk 1,232 1
    • 1 $2.15
    • 10 $2.15
    • 100 $1.3471
    • 1000 $1.06465
    • 10000 $1.0055
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    TDK Electronics B57881S0103F001

    THERMISTOR NTC 10KOHM 3980K DISC
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    DigiKey B57881S0103F001 Bulk 930 1
    • 1 $2.23
    • 10 $2.23
    • 100 $1.0646
    • 1000 $0.97476
    • 10000 $0.97476
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    Newark B57881S0103F001 Bulk 354 1
    • 1 $0.8
    • 10 $0.8
    • 100 $0.8
    • 1000 $0.8
    • 10000 $0.8
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    TME B57881S0103F001 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.01
    • 10000 $1.01
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    Belden Inc FI3F001L9B

    FI BULK_F OM3 1F Z_NR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey FI3F001L9B Bulk 1
    • 1 $0.25
    • 10 $0.25
    • 100 $0.25
    • 1000 $0.25
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    3F001 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    M29DW324D

    Abstract: M29DW324DB M29DW324DT TFBGA48 TFGBA48
    Text: M29DW324DT M29DW324DB 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ■ – VPP =12V for Fast Program (optional)


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    PDF M29DW324DT M29DW324DB TSOP48 16Mbit 16Mbit TFBGA63 M29DW324D M29DW324DB M29DW324DT TFBGA48 TFGBA48

    S3FC40D

    Abstract: IRR36 p64s CalmRISC-16
    Text: S3CC40D/FC40D CalmRISC 16-BIT CMOS MICROCONTROLLERS USER'S MANUAL Revision 1 Important Notice The information in this publication has been carefully checked and is believed to be entirely accurate at the time of publication. Samsung assumes no responsibility, however, for possible errors or


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    PDF S3CC40D/FC40D 16-BIT S3FC40D IRR36 p64s CalmRISC-16

    M29W320E

    Abstract: M29W320EB M29W320ET TFBGA48
    Text: M29W320ET M29W320EB 32 Mbit 4Mb x8 or 2Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional)


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    PDF M29W320ET M29W320EB M29W320E M29W320EB M29W320ET TFBGA48

    IS1651

    Abstract: M29DW323D M29DW323DB M29DW323DT TFBGA48
    Text: M29DW323DT M29DW323DB 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional)


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    PDF M29DW323DT M29DW323DB 24Mbit IS1651 M29DW323D M29DW323DB M29DW323DT TFBGA48

    Be 555

    Abstract: No abstract text available
    Text: M29DW324DT M29DW324DB 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional)


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    PDF M29DW324DT M29DW324DB 16Mbit 16Mbit Be 555

    Untitled

    Abstract: No abstract text available
    Text: M29DW323DT M29DW323DB 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional)


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    PDF M29DW323DT M29DW323DB 24Mbit

    Untitled

    Abstract: No abstract text available
    Text: M29DW324DT M29DW324DB 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ ACCESS TIME: 70, 90ns


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    PDF M29DW324DT M29DW324DB TSOP48 16Mbit 16Mbit TFBGA63

    M29W320E

    Abstract: M29W320EB M29W320ET TFBGA48
    Text: M29W320ET M29W320EB 32 Mbit 4Mb x8 or 2Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional)


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    PDF M29W320ET M29W320EB M29W320E M29W320EB M29W320ET TFBGA48

    AI05

    Abstract: No abstract text available
    Text: M29DW323DT M29DW323DB 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block 3V Supply Flash Memory FEATURES SUMMARY „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional)


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    PDF M29DW323DT M29DW323DB 24Mbit AI05

    Untitled

    Abstract: No abstract text available
    Text: M29DW323DT M29DW323DB 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional)


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    PDF M29DW323DT M29DW323DB 24Mbit

    S3FC34D

    Abstract: CalmRISC-16
    Text: S3CC34D/FC34D CalmRISC 16-BIT CMOS MICROCONTROLLERS USER'S MANUAL Revision 1.2 Important Notice The information in this publication has been carefully checked and is believed to be entirely accurate at the time of publication. Samsung assumes no responsibility, however, for possible errors or


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    PDF S3CC34D/FC34D 16-BIT S3FC34D CalmRISC-16

    s3cc

    Abstract: S3CC34D calmRISC16 S3FC34D MP-64 MDS 2310 manual S3FC CalmRISC-16 SAMSUNG WAFER Date Code Formats samsung SSR
    Text: S3CC34D/FC34D CalmRISC 16-BIT CMOS MICROCONTROLLERS USER'S MANUAL Revision 1 Important Notice The information in this publication has been carefully checked and is believed to be entirely accurate at the time of publication. Samsung assumes no responsibility, however, for possible errors or


    Original
    PDF S3CC34D/FC34D 16-BIT s3cc S3CC34D calmRISC16 S3FC34D MP-64 MDS 2310 manual S3FC CalmRISC-16 SAMSUNG WAFER Date Code Formats samsung SSR

    TFBGA48

    Abstract: M29DW323D M29DW323DB M29DW323DT
    Text: M29DW323DT M29DW323DB 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional)


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    PDF M29DW323DT M29DW323DB 24Mbit TFBGA48 M29DW323D M29DW323DB M29DW323DT

    mp9141

    Abstract: S3FC11B calmRISC16 RP2D1 MP2338 ISO-14001 ADCON10 sd2150 CalmRISC-16 MAC2424
    Text: S3CC11B/FC11B CalmRISC 16-Bit CMOS MICROCONTROLLER USER'S MANUAL Revision 1.20 Important Notice The information in this publication has been carefully checked and is believed to be entirely accurate at the time of publication. Samsung assumes no responsibility, however, for possible errors or


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    PDF S3CC11B/FC11B 16-Bit mp9141 S3FC11B calmRISC16 RP2D1 MP2338 ISO-14001 ADCON10 sd2150 CalmRISC-16 MAC2424

    120820

    Abstract: M29DW323DB
    Text: M29DW323DT M29DW323DB 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional)


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    PDF M29DW323DT M29DW323DB 24Mbit 120820 M29DW323DB

    M29W320

    Abstract: No abstract text available
    Text: M29W320ET M29W320EB 32 Mbit 4Mbx8 or 2Mbx16, Uniform Parameter Blocks, Boot Block 3V supply Flash memory Feature summary • Supply voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Access times: 70, 90ns


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    PDF M29W320ET M29W320EB 2Mbx16, M29W320

    Untitled

    Abstract: No abstract text available
    Text: M29DW323DT M29DW323DB 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional)


    Original
    PDF M29DW323DT M29DW323DB 24Mbit

    Untitled

    Abstract: No abstract text available
    Text: M29DW324DT M29DW324DB 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ■ – VPP =12V for Fast Program (optional)


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    PDF M29DW324DT M29DW324DB TSOP48 16Mbit 16Mbit TFBGA63

    S3FC34D

    Abstract: S3FC calmRISC calm FM24653 ISO-14001 Calm16ASM calmRISC16 s3cc CalmRISC-16
    Text: S3CC34D/FC34D CalmRISC 16-BIT CMOS MICROCONTROLLERS USER'S MANUAL Revision 1.30 Important Notice The information in this publication has been carefully checked and is believed to be entirely accurate at the time of publication. Samsung assumes no responsibility, however, for possible errors or


    Original
    PDF S3CC34D/FC34D 16-BIT S3CC34D/FC34D S3FC34D S3FC calmRISC calm FM24653 ISO-14001 Calm16ASM calmRISC16 s3cc CalmRISC-16

    M29DW324D

    Abstract: M29DW324DB M29DW324DT TFBGA48
    Text: M29DW324DT M29DW324DB 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ■ – VPP =12V for Fast Program (optional) ACCESS TIME: 70, 90ns


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    PDF M29DW324DT M29DW324DB TSOP48 16Mbit 16Mbit TFBGA63 M29DW324D M29DW324DB M29DW324DT TFBGA48

    TFBGA63

    Abstract: M29DW323D M29DW323DB M29DW323DT TFBGA48
    Text: M29DW323DT M29DW323DB 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ■ – VPP =12V for Fast Program (optional) ACCESS TIME: 70, 90ns


    Original
    PDF M29DW323DT M29DW323DB TSOP48 24Mbit TFBGA63 TFBGA63 M29DW323D M29DW323DB M29DW323DT TFBGA48

    Untitled

    Abstract: No abstract text available
    Text: M IT S U B IS H I M IC RO CO M PUTERS M37410M3-XXXFP.M37410M4-XXXFP M37410M6-XXXFP S IN G L E -C H IP 8 -B IT CM O S M IC R O C O M P U T E R DESCRIPTION PIN CONFIGURATION TOP VIEW The M 37410M 3-XXXFP is a s in g le -c h ip m icro com p uter d e ­ signed w ith C M O S silicon gate technology. It is housed in a


    OCR Scan
    PDF M37410M3-XXXFP M37410M4-XXXFP M37410M6-XXXFP 37410M 80-pin 200/i

    Untitled

    Abstract: No abstract text available
    Text: M IT S U B IS H I M ICRO CO M PUTERS M 37413M 4-X X X F P S IN G L E -C H IP 8 -B IT C M O S M IC R O C O M P U T E R DESCRIPTION P IN C O N F IG U R A T IO N T O P V IE W The M 37413M 4-XXXFP is a sin g le -c h ip m icro com p uter d e ­ signe d w ith C M O S silicon ga te technology. It is housed in a


    OCR Scan
    PDF 37413M 80-pin 200/f 800/f

    L38A

    Abstract: No abstract text available
    Text: M IT S U B IS H I M IC RO CO M PUTERS M 37410M 3-XXXFP.M 37410M 4-XXXFP M37410M6-XXXFP SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER DESCRIPTION PIN CONFIGURATION TOP VIEW The M 37410M 3-XXXFP is a s in g le -c h ip m icro com p uter d e ­ signe d w ith C M O S silicon gate technology. It is housed in a


    OCR Scan
    PDF 37410M M37410M6-XXXFP 80-pin 800/f L38A