Untitled
Abstract: No abstract text available
Text: ARBOR-HLESAW 1/2" SHNK W/3FLTS BULK Arbors with Replacement High-Speed Steel Pilot Drill Bits Cat No: 37156B UPC No: 783310376262 Description • • • • • The best arbor in the industry ensures a solid connectionwithout any gaps or wobbling Arbors include replaceable, high-speed steel pilot drill
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37156B
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Untitled
Abstract: No abstract text available
Text: TPS2459 www.ti.com SLUS917C – FEBRUARY 2009 – REVISED MARCH 2010 12-V/3.3-V Hot Swap and ORing Controller with I2C and Load Current Monitor for AdvancedMC™ Check for Samples: TPS2459 FEATURES APPLICATIONS • • • • • • • 1 23 • • •
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TPS2459
SLUS917C
32-Pin
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oei 6134
Abstract: 6125A OPTICAL ELECTRONICS passive sonar block diagram projector dc dc converter circuit sonar block diagram 6280 camera "optical electronics" composite rotator
Text: OPTICAL ELECTRONICS INC DhE D g b7^3flt. QDOlfiflE 4 | T - 7 3 -v ; ~ 6125A DATA AND SPECIFICATIONS DESCRIPTION AND INSTRUCTIONS Optical Electronics Incorporated ANALOG IMAGE ROTATOR FEATURES APPLICATIONS . 360° ROTATION . FREQUENCY RESPONSE 500KHz • IMAGE ROTATION
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500KHz
44-pin
oei 6134
6125A
OPTICAL ELECTRONICS
passive sonar block diagram
projector dc dc converter circuit
sonar block diagram
6280 camera
"optical electronics"
composite rotator
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BYX55-600
Abstract: BYX55-350
Text: 2SE D GENL INSTR/ POWER • 3flTD137 QaD3aSa 1 ■ BYX55-350P AND BYX55-600P SOFT RECOVERY, FAST SWITCHING PLASTIC RECTIFIER VOLTAGE - 350 to 600 Volts C U R R E N T -1.2 Amperes FEATURES ♦ High surge current capability ♦ The plastic package carries Underwriters
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3flTD137
BYX55-350P
BYX55-600P
D0-201AD
BYX55-600
BYX55-350
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DO-204AP
Abstract: DO204AP Package RG1 Series
Text: 3890137 GENL INSTR, POWER 3flT0137 000E435 h ^ T~OZ~ 3 ÿ :^ R G 1 S E R I E S -¿it , INIATURE G LASS PASSIVATED JUNCTION FAST SW ITCHING'RECTIFIER VOLTAGE RANGE SO to 1000 Volts CU RR EN T 1.0 Ampere DQ-204AP FEATURES • High temperature metallurgically bonded — no com
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1G137
000E435
DO-204AP
MIL-STD-19500
000243b
DO204AP Package
RG1 Series
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BUK436-60A
Abstract: 134 T31 100-P BUK436-60B
Text: PHILIPS INTERNATIONAL bSE D • 711D6Sb 00t.3flTl 3^b ■ P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode iield-effect power transistor in a plastic envelope. The device is intended for use in
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711D6Sb
BUK436-60A/B
BUK436
drai11062b
BUK436-60A
134 T31
100-P
BUK436-60B
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Untitled
Abstract: No abstract text available
Text: * GENL INSTR/ POWER 25E I> • * ’ 3flTQ137 0003618 7 ■ T ~ 2 2 '0 S ~ 2W005M THRU 2W10M MINIATURE SINGLE - PHASE SILICON BRIDGE RECTIFIER VOLTAGE - 50 to 1000 Volts CURRENT - 2.0 Amperes FEATURES ♦ This series is UL recognized under component index, file number E54214
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3flTQ137
2W005M
2W10M
E54214
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BY207
Abstract: No abstract text available
Text: GENL INSTR/ PODER ESE D • 3flTG13? QQG371ti ñ ■ ~ r - 0 2 - 0 1 BY206GP THRU BY207GP MINIATURE GLASS PASSIVATED JUNCTION FAST SWITCHING RECTIFIER Voltage - 350 to 600 Volts Current - 0.4 Amperes FEATURES ♦ High temperature metallurglcaliy bonded con
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3flTG13?
QQG371ti
BY206GP
BY207GP
DO-41
DO-41
BY207
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Untitled
Abstract: No abstract text available
Text: GENL ÏNSTR/ POWER DE I 3flT0137 0DD5S43 ^ ^7 T- 2 3 -0 $ - KBP SERIES « 1 .5 'f t t ìP E R E M I N I A T U R E S I N G L E R H A 'S E S I L I C O N B R I D G E GENERAL INSTRUMENT V O LT A G E R A N G E 50 to 1000 Volts C U R R EN T 1.5 Amperes FEATU RES
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3flT0137
0DD5S43
E54214
KBP02
KBP04
KBP06
KBP08
KBP10
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BY127MGP
Abstract: BY126 BY126MGP BY227 BY226MGP BY227MGP by226 "General Instrument"
Text: GENL INSTR/ POWER fl? ¿F|3flTD137 0002343 1 7"o / -t é ~ BY126MGIVBY127MGP/BY226MGR, BY227MGP . ’ '•«MINIATURE C LASS PASSIVATED JUNCTION PLASTIC RECTIFIER ‘ GENERAL INSTRUMENT VOLTAGE RANGE 650 and 1250 Volts CURRENT 1.75 and 2.0 Amperes FEATURES
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3flT0137
BY126MGP,
BY127MGP/BY226MGP,
BY227MGP
DO-15
MIL-STD-19500
MIL-STD-202,
208SE
TEMP-600
UL94V0)
BY127MGP
BY126
BY126MGP
BY227
BY226MGP
BY227MGP
by226
"General Instrument"
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BYX55-600
Abstract: BYX55-600P BYX55-350P BYX55 D0-201AD BYX55-350
Text: 2SE D GENL INSTR/ POWER • 3flTD137 QaD3aSa 1 ■ BYX55-350P AND BYX55-600P SOFT RECOVERY, FAST SWITCHING PLASTIC RECTIFIER VOLTAGE - 350 to 600 Volts C U R R E N T -1.2 Amperes FEATURES ♦ High surge current capability ♦ The plastic package carries Underwriters
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TG137
BYX55-350P
BYX55-600P
D0-201AD
MIL-STD-202,
BYX55-600
BYX55-600P
BYX55
BYX55-350
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JTX1N4942
Abstract: No abstract text available
Text: 2SE D 6ENL INSTR/ POWER • 3flTQ137 0QG34flô T ■ ~T-03-l7 SBLF530 AND SBLF540 SCHOTTKY RECTIFIER VOLTAGE RANGE - 30 and 40 Volts CURRENT - 5.0 Amperes FEATURES IT0-220 .1581.008 .13 t . 008 <3,3 *0 .2 ^ .405 M M L lT f f . 3) t w x, t 17) ■ r »103 m .
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3flTQ137
0QG34flô
T-03-l7
SBLF530
SBLF540
IT0-220
JTX1N4942
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SLV-31YC
Abstract: No abstract text available
Text: @ Lamp House 5bE D • TÔSfl'm 0QG713D 3flT I B R H M ROHM CO LTD Can be used as backlight of function display on audio and home appliances. Various sizes and custom options are available. Emitter surface Size mm 5 x 13.5 10X 14 M odel Em itting color Applicable lamp
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0QG713D
LR-1140DC
LR-1140M
LR-1150LT
LR-11S0YC
LR-1150NYC
LR-1150M
-0301A
SLV-31DC
SLV-31M
SLV-31YC
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BUK436-60A
Abstract: MC 151 transistor 100-P BUK436-60B
Text: PHILIPS INTERNA TION AL bSE D • 711D6Sb 00t.3flTl 3^b ■ P H I N Philips Sem iconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode iield-effect power transistor in a plastic envelope. The device is intended for use in
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711D6Sb
BUK436-60A/B
BUK436
711062b
00b3fi
BUK436-60A
MC 151 transistor
100-P
BUK436-60B
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lta 301
Abstract: FL-95 f46j D3S17 KBU88
Text: GENERAL INSTRUMENT CORP/ OSE D £ 3flT0137 0003217 1 I , • T * -X b - C 7 RKBU8 SERIES ^ ~ ~ 8 0 A M P E R E P A S T R E C O V E R Y S IL IC O N SIÑ G LE -P H A á fc B R I D G e X e C T I H E R ^ 1 - r> GENERAL INSTRUMENT VO LTAG E RANG E 50 to 600 volts
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D3S17
E54214
AT60HZ
lta 301
FL-95
f46j
KBU88
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8YW29-150
Abstract: 8YW29
Text: GENL INSTR/ POWER fi? P e J I 3flT0:ii37 00025^3 1 | ~ 7 T0 3 - / 7 YW29 SER IES i T lf ^ P É R é í Á ^ t j F 'R ÍC f E Ñ t ^ L A S S '^ i i í^ ^ ^ t C t Í F l ^ s l GENERAL INSTRUMENT VOLTAGE R A N G E 5 0 to 15 0 Volts C U RR E N T 8.0 A m p e r e s
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O-220
W29-100
8YW29-150
8YW29
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IXSN50N60U1
Abstract: 25CC E72873 50N60 50N60U1
Text: 4 b û b 2 2 b □ □ □ 1 7 ‘ìl 3flT • IX Y □IXYS IGBT with Diode IXSN50N60U1 >c V .„ High Short Circuit SOA Capability =53A = 600 V VcE<sa„ = 2-5 V 2 4 S ym bol T e st C o n d itio n s 'T l M axim um R a tin g s VcES T j = 25°C to 150°C 600
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IXSN50N60U1
D-68619
25CC
E72873
50N60
50N60U1
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AT60H
Abstract: No abstract text available
Text: GENERAL INSTRUMENT CORP/ OSE D £ 3flT0137 0003217 1 I T * -X b - C 7 • , ^ ~ ~ RKBU8 SERIES 8 0 A M P E R E P A S T R E C O V E R Y S IL IC O N SIÑ G LE -P H A á fc B R I D G e X e C T I H E R ^ 1 - r> GENERAL INSTRUMENT VO LTAG E RANG E 50 to 600 volts
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3flT0137
E54214
AT60H
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HA 13431
Abstract: SBS1045T SBS1020T SBS1035T
Text: 3890 137 GENL INSTR, POWER 37 3flTD137 DD0222S T-Ö3 j y VOLTAGE RANGE 20 to 45 Volts CURRENT 10.0 Am peres .139 I3.MÌ TO-220 M • 9.651 .«110.671 FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Metal to silicon rectifier, majority carrier condition
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3flTD137
DD0222S
O-220
O-220
MIL-STD-202
13age
300ps,
SBS1030T
SBS1035T
SBS1040T
HA 13431
SBS1045T
SBS1020T
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AxC11
Abstract: No abstract text available
Text: N EC ELECTRONICS INC dEEC ^ t 7 E 1 • tMS7S2S DG3R58b MM3 H N E C E _ 16Mbit Synchronous DRAM_ CONTENTS Programable 3 - stage pipeline. Features.
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DG3R58b
16Mbit
bM27S25
AxC11
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KL SN 102 94v
Abstract: wire T568 SCV64 The VMEbus Handbook, Fourth Ed VMEbus interface handbook Q002 ih 584 el designer manual kds 1555 SAA 1260 Ka 2535
Text: O p e n b u s In t e r fa c e C o m p o n e n t s SCV64 User Manual Issue 1 * / • bSflfllDl Q[ D24A0 134 ■ This Material Copyrighted By Its Respective Manufacturer T h e in fo rm a tio n in th is d o c u m e n t is su b je c t to c h a n g e w ith o u t n o tic e an d sh o u ld n o t be c o n stru ed as a
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SCV64
024fl0
SCV64
288-pin
CA91C078-X
CA91C078
b5flfll01
KL SN 102 94v
wire T568
The VMEbus Handbook, Fourth Ed
VMEbus interface handbook
Q002
ih 584 el designer manual
kds 1555
SAA 1260
Ka 2535
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Untitled
Abstract: No abstract text available
Text: SE1450 GaAs Infrared Emitting Diode ELECTRICAL CHARACTERISTIC 25°C unless otherwise noted PARAMETER Total Power Output SE1450-001, SE1450-001 L SE1450-002, SE1450-002 L SE1450-003, SE1450-003 L SE1450-004, SE1450-004 L Forward Voltage . Reverse Breakdown Voltage
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SE1450
SE1450-001,
SE1450-001
SE1450-002,
SE1450-002
SE1450-003,
SE1450-003
SE1450-004,
SE1450-004
QQ25MS1
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Untitled
Abstract: No abstract text available
Text: •HYUNDAI H Y SEMICONDUCTOR 514100A S e rie s 4M x 1-bit CMOS DRAM DESCRIPTION The HY514100A is the new generation and fast dynamic RAM organized 4,194,304 x 1-bit. The HV514100A utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating
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14100A
HY514100A
HV514100A
1AC06-20-APR93
4b75DÃ
HY514100AJ
HY514100AU
HY514100AT
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Untitled
Abstract: No abstract text available
Text: P R is y iif iiO K iÆ in r in ie l VE28F008 8 MBIT (1 MBIT x 8 FLASH MEMORY • High-Density Symmetrically Blocked Architecture — Sixteen 64 Kbyte Blocks Very High-Performance Read — 95 ns Maximum Access Time ■ Avionics Temperature Range 40°C to + 125°C
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VE28F008
-40-Lead
4AEL17S
40-Pln
28F008SA-L
AP-359
28F008SA
AP-360
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