3MM LED
Abstract: IR detector transistor 551 IR LED array nj TRANSISTOR green LED 3mm low 3mm "ir led" diode led ir 3mm photo diode LED 3mm 2ma
Text: Selector Guide: 3mm IR and L E D Products DESCRIPTION DATA SHEET PAGE s 3mm IR Detector Infra Red Emitter 551-7110 4-7 3mm IR Detector Photo Transistor 551-7610 4-8 3mm IR Detector Photo Diode 551-7710 4-9 551-XX01 4-10 & 4-11 551-XX02 4-12 3mm LED CBI (DIN 41494 compatible)
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551-XX01
551-XX02
551-xx03
3MM LED
IR detector
transistor 551
IR LED array
nj TRANSISTOR
green LED 3mm low
3mm "ir led"
diode led ir
3mm photo diode
LED 3mm 2ma
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Untitled
Abstract: No abstract text available
Text: Silicon photo transistor KDT3002A Dimensions The KDT3002A is high sensitivity NPN silicon photo transistor mounted in [Unit : mm] 3mm T-1 all plastic mold type. This photo transistor is both compact and easy to mount. Features Higly sensitive photo transistor
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KDT3002A
KDT3002A
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Untitled
Abstract: No abstract text available
Text: AU K CORP. Photo Transistor KDT3001A Description The KDT3001A is a high-sensitivity NPN silicon phototransistor mounted in 3mm T-1 all plastic mold type. Pin Connection 1. Emitter 2. Collector Features 3mm(T-1) all plastic mold type Colorless transparency lens
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KDT3001A
KDT3001A
000lux,
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transistor 551
Abstract: 3MM LED
Text: Selector Guide: 3mm IR and LED Products DESCRIPTION DATA SH EET PAGE s 551-7110 4-10 551-7610 4-11 551-7710 4-12 551-xx01 4-13 & 4-14 551-xx02 4-15 3mm Infrared Emitter Em itter .200 from P C B H ousing M ounts on .175 pitch 3mm Silicon PNP Photo Transistor
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551-xx01
551-xx02
3TF-9484
transistor 551
3MM LED
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transistor 0117
Abstract: MDL82
Text: MDL82 NPN SILICON PHOTO DARLINGTON TRANSISTOR DESCRIPTION « .9 7 • 0.117 MDL82 is NPN silicon planar photo darlington transistor. It is encapsulated in a 3mm diameter, low profile and flangeless water clear transparent epoxy package. It features ultra high illumination
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MDL82
100jtiA
100ohm
6S477
transistor 0117
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Untitled
Abstract: No abstract text available
Text: DESCRIPTION CRO MEL85 NPN SILICON PHOTO TRANSISTOR MEL85 is NPN silicon planar photo transistor. It is encapsulated in a 3mm diameter, low profile and flat top type water clear transparent epoxy package. It features ultra high illumination sensitivity, fast response time.
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MEL85
MEL85
May-99
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h004
Abstract: MEL708
Text: CRO MEL708 iNPN SILICON PHOTO TRANSÌSTOR DESCRIPTION MEL708 is NPN silicon photo-transistor with external base connection and built in a standard T-l 3mm water clear package. This device is suitable for use in a light sensor of the industrial control application.
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MEL708
H0-04)
MEL708
MEL708-A
1000Q
Nov-99
h004
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MEL708
Abstract: No abstract text available
Text: CKO / u o NPN SILICON PHOTO TRANSISTOR DESCRIPTION MEL708 is NPN silicon photo-transistor with external base connection and built in a standard T-l 3mm water clear package. This device is suitable for use in a light sensor of the industrial control application.
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MEL708
100mA
200mW
MEL708
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MDL82
Abstract: a1580
Text: • ■ I WK ■ g ■ PHOTO DARLINGTON TRANSISTOR Æ ■ I g DESCRIPTION 02.97 ‘ 0.117 MDL82 is NPN silicon planar photo darlington transistor. It is encapsulated in a 3mm diameter, low profile and flangeless water clear transparent epoxy package. r 4*1
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MDL82
a1580
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MEL82
Abstract: MI38T
Text: CRO MEL82 N PN SILICON PHOTO TRANSISTOR DESCRIPTION 02.97 0.117 MEL82 is NPN silicon planar photo transistor. It is encapsulated in a 3mm diameter, low profile and flangeless water clear transparent epoxy package. / 4*.1 • (0.16) 0.75(0.03)_ max. It features ultra high illumination
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MEL82
MI38T
20mW/cm3
100ohm
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MEL708-S
Abstract: No abstract text available
Text: CRO DESCRIPTION MEL708-S NPN SILICON PHOTO TRANSISTOR -2.9 0.11 MEL708-S is NPN silicon photo transistor with external base connection and built in a standard T-l (3mm) water clear package. T .3(0.16) p —0.5(0.019) —3.1(0.12) 1.0(0.039) A 3 .25 /0 .12)
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MEL708-S
MEL708-S
Jun-1999
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Untitled
Abstract: No abstract text available
Text: TO SHIBA T P S 6 12 TOSHIBA PHOTO TRANSISTOR • ■ SILICON NPN EPITAXIAL PLANAR MF FOR PHOTO SENSOR U n it in mm $ 3 .0 ± 0.3 PHOTOELECTRIC COUNTER FLOPPY DISK DRIVE POSITION DETECTION CONTROLLER OF HOME ELECTRIC EQUIPM ENT 2 - 0 .6 MAX 9}3mm resin package black
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TLN113
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Untitled
Abstract: No abstract text available
Text: TPS612 T O SH IB A TOSHIBA PHOTO TRANSISTOR SILICON NPN EPITAXIAL PLANAR TPS61 2 FOR PHOTO SENSOR Unit in mm PHOTOELECTRIC COUNTER j2?3-Q £ 0 . 3 FLOPPY DISK DRIVE POSITION DETECTION CONTROLLER OF HOME ELECTRIC EQUIPMENT 2 - 0-6 MAX • • • • ^3mm resin package black
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TPS612
TPS61
TLN113
TLN113
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MEL78D
Abstract: No abstract text available
Text: MEL78D NPN SILICON PHOTO TRANSISTOR DESCRIPTION MEL78D is NPN silicon planar phototransistor with 3mm dimeter light 0.124 rejective filter epoxy package. It features ultra high, illumination sensitivity and fast response time. 5*3 (0.21) » . 1.0(0.04)-!
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MEL78D
CHARACTER260Â
100/xA
100/iA
of2354Â
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Untitled
Abstract: No abstract text available
Text: mN£EhLEl1C '°LTt SSE1 " "b7aisi 0002021 Db0"IIST 7“^//~ 6 3 PHOTODARLINGTON TRANSISTOR PD306 • FEATURES • • Package Dimensions HIGH DIRECTIVITY LENS 3mm DIA. MOLDED EPOXY TYPE ■ APPLICATION • • PHOTOSENSOR PHOTO SWITCH Absolute Maximum Ratings
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PD306
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mouse Phototransistor
Abstract: visible phototransistor kst-312
Text: AUK CORP. Photo Transistor KST-312 Description The KST-312 is a high-sensitivity silicon phototransistor with two-phaseoutput. this phototransistor is compact, and the best for the mouse. Features Thickness : 3mm Visible light cut-off type Bult-in 2ch phototransistor
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KST-312
KST-312
100uA
mouse Phototransistor
visible phototransistor
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nj TRANSISTOR
Abstract: 450KW
Text: 3mm Silicon PNP Photo Transistor Dialight 551-7610 1.57 [.062] 4.32 [.170] 7.11 .280 Features 6.35 [.250] • Silicon PNP type transistor • Narrow acceptance angle • Daylight filtered • Good linearity • High reliability 3.00 [.118] DIA. 5.08 [.200]
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MIL-STD-202E,
nj TRANSISTOR
450KW
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IS654A
Abstract: IS655A
Text: IS654A IS655A 3mm DIA. MATCHED INFRARED EMITTER DETECTOR PAIR PHOTOTRANSISTOR OUTPUT Dimensions in mm 4.0 DESCRIPTION The IS654A Gallium Arsenide Emitting Diode and the IS655A ( NPN Silicon Photo Transistor ) are a mechanically and spectrally matched emitter detector end looking pair.
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IS654A
IS655A
DB92102-AAS/A2
IS654A
IS655A
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nj TRANSISTOR
Abstract: No abstract text available
Text: NEW 3mm Infrared Discrete LED Silicon PNP Photo Transistor Dialight 521-9740 Features 5.18 [.204] 4.09 [.161] .79 [.031] .61 [.024] SQ. .71 [.028] • Silicon PNP type transistor • Narrow acceptance angle • Daylight filtered • Good linearity • High reliability
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MIL-STD-202E,
nj TRANSISTOR
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Untitled
Abstract: No abstract text available
Text: AU K CORP. Photo Transistor KST-312 Description The KST-312 is a high-sensitivity silicon phototransistor with two-phaseoutput. this phototransistor is compact, and the best for the mouse. Features Thickness : 3mm Visible light cut-off type Bult-in 2ch phototransistor
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KST-312
KST-312
100uA
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Untitled
Abstract: No abstract text available
Text: CRO MEL708 NPN SILICON PHOTO TRANSISTOR DESCRIPTION MEL708 is NPN silicon phototransistor with external base connection and built in a standard T-l 3mm water clear package. This device is suitable for use in a light sensor of the industrial control application.
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MEL708
MEL708
100mA
200mW
100/i
2854C
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Untitled
Abstract: No abstract text available
Text: AUK CORP. Photo Transistor KDT3001A Description The KDT3001A is a high-sensitivity NPN silicon phototransistor mounted in Φ 3mm T-1 all plastic mold type. Pin Connection 1. Emitter 2. Collector Features Φ3mm(T-1) all plastic mold type Colorless transparency lens
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KDT3001A
KDT3001A
000lux,
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Untitled
Abstract: No abstract text available
Text: IUI I • I U ■ I D ■ I DARLINGTON TRANSISTOR I DESCRIPTION S>2.97<0.117> MDL82 is NPN silicon planar photo darlington transistor. It is encapsulated in a 3mm diameter, low profile and flangeless water clear transparent epoxy package. / N \ 4. <0.16 T
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MDL82
MEL82)
100ohm
MDL82
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MEL78D
Abstract: No abstract text available
Text: DESCRIPTION M E L 78D transistor rejective features sensitivity CRO is NPN silicon planar photowith 3mm dim eter light filter epoxy package. It ultra high. illum ination and fast response time. <°-124> n 5.3 • • NPN SILICON PHOTO TRANSISTOR A,ì dimension in mm incb
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MEL78D
100itA
100/iA
of2354Â
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