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    3N10L26

    Abstract: D35A IPD35N10S3L-26
    Text: IPD35N10S3L-26 OptiMOS -T Power-Transistor Product Summary V DS 100 V R DS on ,max 26 mW ID 35 A Features • N-channel - Enhancement mode PG-TO252-3-11 • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant)


    Original
    IPD35N10S3L-26 PG-TO252-3-11 3N10L26 3N10L26 D35A IPD35N10S3L-26 PDF

    3N10L26

    Abstract: IPD35N10S3L-26 3N10L PG-TO252-3-11 d35a
    Text: IPD35N10S3L-26 OptiMOS -T Power-Transistor Product Summary V DS 100 V R DS on ,max 26 mΩ ID 35 A Features PG-TO252-3-11 • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original
    IPD35N10S3L-26 PG-TO252-3-11 3N10L26 3N10L26 IPD35N10S3L-26 3N10L PG-TO252-3-11 d35a PDF

    3N10L26

    Abstract: No abstract text available
    Text: IPD35N10S3L-26 OptiMOS -T Power-Transistor Product Summary V DS 100 V R DS on ,max 26 mW ID 35 A Features PG-TO252-3-11 • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant)


    Original
    IPD35N10S3L-26 PG-TO252-3-11 PG-TO252-3-11 3N10L26 3N10L26 PDF

    3N10L26

    Abstract: IPB35N10S3L-26 3N10L IPB35N ipb35n10s3l IPB35N10
    Text: IPB35N10S3L-26 OptiMOS -T Power-Transistor Product Summary V DS 100 V R DS on ,max 26.3 mW ID 35 A Features PG-TO263-3-2 • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original
    IPB35N10S3L-26 PG-TO263-3-2 PG-TO263-3-2 3N10L26 3N10L26 IPB35N10S3L-26 3N10L IPB35N ipb35n10s3l IPB35N10 PDF