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    IPD30N10S3L

    Abstract: IPD30N10 IPD30N10S3 3N10L34 IPD30N10S3L-34 GD25Q 3N10L PG-TO252-3-11
    Text: IPD30N10S3L-34 OptiMOS -T Power-Transistor Product Summary V DS 100 V R DS on ,max 31 mΩ ID 30 A Features PG-TO252-3-11 • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		IPD30N10S3L-34 PG-TO252-3-11 3N10L34 IPD30N10S3L IPD30N10 IPD30N10S3 3N10L34 IPD30N10S3L-34 GD25Q 3N10L PG-TO252-3-11 PDF

    3N10L34

    Abstract: No abstract text available
    Text: IPD30N10S3L-34 OptiMOS -T Power-Transistor Product Summary V DS 100 V R DS on ,max 31 mW ID 30 A Features • N-channel - Enhancement mode PG-TO252-3-11 • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant)


    Original     		IPD30N10S3L-34 PG-TO252-3-11 3N10L34 3N10L34 PDF

    3N10L34

    Abstract: IPD30N10S3L-34
    Text: IPD30N10S3L-34 OptiMOS -T Power-Transistor Product Summary V DS 100 V R DS on ,max 31 mΩ ID 30 A Features PG-TO252-3-11 • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		IPD30N10S3L-34 PG-TO252-3-11 PG-TO252-3-11 3N10L34 3N10L34 IPD30N10S3L-34 PDF