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    Altech Corporation CBF12-R43N2-05BPVC

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    Altech Corporation CBF12-S43N2-05BPUR

    CIRC CBL 4POS PLUG TO WIRE 16.4'
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    Altech Corporation CBF12-R43N2-05BPUR

    CBL 4POS PLUG RA TO WIRE 16.4'
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    Altech Corporation CBF12-S43N2-05BPVC

    CIRC CBL 4POS PLUG TO WIRE 16.4'
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    Altech Corporation CBF08-R33N2-05BPVC

    SENSOR CABLE, M8, FEMALE, 90, 3-
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    3N205 Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    3N205 General Electric Silicon dual insulated-gate field-effect transistor. Scan PDF
    3N205 Motorola European Master Selection Guide 1986 Scan PDF
    3N205 Motorola N-channel-defletion dual-gate MOSFET. Scan PDF
    3N205 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    3N205 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    3N205 Unknown Shortform Electronic Component Datasheets Short Form PDF
    3N205 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    3N205 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    3N205 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    3N205 Unknown Cross Reference Datasheet Scan PDF
    3N205 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    3N205 Texas Instruments Supply Division Product Catalogue 1978/79 Scan PDF
    3N205 Texas Instruments Discrete Devices 1978 Scan PDF

    3N205 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    3n205

    Abstract: dual-gate
    Text: 3N205 MOS FIELD-EFFECT TRANSISTOR DESCRIPTION: The ASI 3N205 is an N-Channel Dual-Gate Depletion Type Transistor With Monolithic Gate Protection Diodes, Designed for use in High Frequency Mixer and Low Noise Amplifier Applications. PACKAGE STYLE TO-72 MAXIMUM RATINGS


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    3N205 3N205 dual-gate PDF

    Untitled

    Abstract: No abstract text available
    Text: DIGITRON SEMICONDUCTORS 3N204-3N205 DUAL GATE MOSFET MAXIMUM RATINGS SYMBOL VALUE UNIT Drain-Source Voltage RATING VDS 25 Vdc Drain-Gate Voltage VDG 30 Vdc Drain Current lD 50 mA Reverse Gate Current lG -10 mA Forward Gate Current lGF 10 mA PD 360 2.4 mW mW/°C


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    3N204-3N205 1-Sour-3N205 MIL-PRF-19500, PDF

    40673 MOSFET

    Abstract: MFE131 mosfet 3SK77GR 3N159 40673 MPF201 MFE521 3SK77BL 3N200 MOSFET 3SK107F
    Text: MOSFET Item Number Part Number Manufacturer V BR OSS M loss Max (A) Po Max (W) ros (on) (Ohms) 9FS Min (S) VGS(th) Max (V) Cln Max (F) tr Max (s) tt Max (s) Toper Max (OC) Package Style N-Channel Dual-Gate T trode, (Cont' d) 5 10 BF964 BF966 BF966 BF966 3SK107E


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    BF964 BF966 3SK107E 3SK107F 3SK107G BF996S 40673 MOSFET MFE131 mosfet 3SK77GR 3N159 40673 MPF201 MFE521 3SK77BL 3N200 MOSFET PDF

    2N4351 MOTOROLA

    Abstract: MRF966 3SK124 2N3819 MOTOROLA BFS28 3SK45 BSV81 2N4221 motorola BC547 MOTOROLA 3SK76
    Text: REPLACEMENTI ALTERNATE SOURCE 2SK355 Part No. Alternate Device 2SK355 Conl'd IRF241 2SK357 BUZ30 BUZ43A IRF623 2SK358 BUZ60 2SK382 BUZ42 BUZ74A IRF822 VN0350N5 2SK383 BUZ72 IRF530 2SK385 IRFP340 2SK386 IRFP453 2SK387 IRFP241 2SK388 IRFP351 2SK398 BUZ23 IRF132


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    2SK355 IRF241 2SK357 BUZ30 BUZ43A IRF623 2SK358 BUZ60 2SK382 2N4351 MOTOROLA MRF966 3SK124 2N3819 MOTOROLA BFS28 3SK45 BSV81 2N4221 motorola BC547 MOTOROLA 3SK76 PDF

    3N204

    Abstract: RCA-3n204 3N205 3N204 equivalent 3N206 tl 3278 RF diodes 3N20B
    Text: G f | E S O LID STATE 01 DE | 3 a ? 5 0 8 1 D D 1 S 0 1 1 3 8 7 5 0 8 1 G E S O L ID STATE 01 E 1 5 0 1 9 D S m a ll-S ig n a l M O S F E T s _;_ _ _ :_ I O M l 3N204, 3N205, 3N206 Silicon Dual Insulated-Gate


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    3N204, 3N205, 3N206 3N204 3N205 for3N204 RCA-3N204, 3N204 RCA-3n204 3N205 3N204 equivalent 3N206 tl 3278 RF diodes 3N20B PDF

    str 4479

    Abstract: 3N204 3n206 3N204 equivalent 3N205
    Text: T Y P ES 3N204, 3N205, 3N206 N -C H A N N E L D U A L-G A T E D EP LETIO N -TYP E IN S U LA T E D -G A T E F IE LD -E FF E C T TR A N S IS TO R S B U L L E T IN N O . D L -S 7 2 1 1 7 1 7 , M A Y 1 97 2 D EPLETIO N -TYPE MOS S ILIC O N TRAN SISTO RS • Monolithic Gate-Protection Diodes


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    3N204, 3N205, 3N206 str 4479 3N204 3N204 equivalent 3N205 PDF

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    BF817

    Abstract: 3N225 3N160 BF806 p channel depletion mosfet 3N201 BF818 BF805 n channel depletion MOSFET dual gate mosfet in uhf amplifier
    Text: Metal Can FET 's Low Leakage/Noise Current Case Outlines <M i I ^ 1 2 3 5 6 7 Source Drain Gate Source Drain Gate 1 1 1 2 2 2 3 -1 8 _ 0-23 L -4 5 Type No. Case BF800 BF801 BF802 BF805 BF806 TO -72 T 0 -7 2 TO-72 TO -72 TO-72 IG S Pol. max. pA N N N N N


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    1270J en-100kHz BF800 3x10-" BF801 T0-72 4x10-" BF802 BF805 6x10-" BF817 3N225 3N160 BF806 p channel depletion mosfet 3N201 BF818 n channel depletion MOSFET dual gate mosfet in uhf amplifier PDF

    3N211

    Abstract: 3N201 3N212 3N205 3N204 dual gate 3N203 3N213 3N202
    Text: FIELD-EFFECT TRANSISTORS continued MOSFETs Dual Gate MOSFETs MOSFETs N-CHANNEL These devices are especially suited for RF amplifier and mixer applications in TV tuners, radio, etc. The Dual Gate construction also allows easy AGC control with very low power.


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    3n211 3n213 3n212 3n203 3n201 3n202 3N205 3N204 dual gate PDF

    3N225

    Abstract: BF805 3N201 3N211 BF802 3N202 BF806 BF800 3N204 3N205
    Text: mTexas In s tru m e n ts FET's For V H F A m p lifie rs and M ix e rs Type No. Case I g s s Vp Ciss Crss Pol max. max max. max. nA V pF 2N3823 T072 N 0.5 8 6 2N4416 T072 2N4416A T072 N N 0.1 0.1 6 6 4 4 0.8 0.8 4000 400 4000 10 2 N5549 N 0.25 6 8 2 6000 T018


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    2N3823 2N4416 2N4416A N5549 3N201 3N202 3N203 N203A 3N204 BF800 3N225 BF805 3N211 BF802 BF806 3N205 PDF

    F245B

    Abstract: BF256 2N3820 BC264 U1898E BFS21A MPF105 vergleichsliste BF320 TIS69
    Text: FACHHÄNDLER INFORMATION DISKRETE PRODUKTE FETs Warum FET-Vorzugsprodukte? Weil: • 20% unserer Produkte mehr als 80% aller Anforderungen erfüllen. ■ wir unsere Produkte mittels Computer analysiert haben nach: größtem Bedarf notwendigen Parametern niedrigsten Kosten


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    100-MHz F245B BF256 2N3820 BC264 U1898E BFS21A MPF105 vergleichsliste BF320 TIS69 PDF

    3N204

    Abstract: 3N205 3N3204
    Text: MOTOROLA SC -CXSTRS/R F> 6367254 Tb MOTOROLA SC CXSTRS/R DË|t,3b72SM 96D F 82613 D0flSbl3 D M A X I M U M R A T IN G S Sym bol Value Drain-Source Voltage VD S 25 Vdc Drain-Gate Voltage Vdg 30 Vdc mA Rating Unit Drain Current Id 50 Reverse Gate Current Ig


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    3b725M 3N204 3N205 O-206AF) 3N3204 PDF

    LG color tv Circuit Diagram schematics

    Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    3186J LG color tv Circuit Diagram schematics free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007 PDF

    TIS43

    Abstract: equivalent of transistor bc214 BF257 Texas equivalent of transistor bc212 bc 214 2N696 TEXAS INSTRUMENTS Q2T2222 TIS70 BFR40 kd 2060 transistor BF195 equivalent
    Text: The Transistor and Diode Data Book for Design Engineers Volume II Northern European Edition IMPORTANT NOTICES Texas Instrum ents Ltd ., reserves the rig h t to make changes at any tim e in order to improve design and to supply the best p ro d u c t possible.


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    2S301 BS9300-C-598 2S305 BS9300-C-366 2S307 2S322 CV7396 BS9300-C-396 CV7647 BS9300-C-647 TIS43 equivalent of transistor bc214 BF257 Texas equivalent of transistor bc212 bc 214 2N696 TEXAS INSTRUMENTS Q2T2222 TIS70 BFR40 kd 2060 transistor BF195 equivalent PDF

    TV vertical section

    Abstract: Service mode tv fet 40673 horizontal section of tv CA3237 CA3223 40673 fet 3N205 CA3199 CA3261
    Text: — THOnSON/ DISTRIBUTOR SflE D • TDSbflTB 0005702 b47 ■ TCSK T V /C A T V Circuits Type - D e scription Pkg. No. of Pins* Type Tuners M O S F E T s D e scrip tion Pkg. No. of Pins* A u dio O u tput 3N200 For Military & Indust. Applic. up to 500M Hz 4T


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    TD2tjfl73 3N200 500MHz 3N204 3N205 CA3247 CA3140 CA3163 25GHz 64/-H TV vertical section Service mode tv fet 40673 horizontal section of tv CA3237 CA3223 40673 fet CA3199 CA3261 PDF

    TRIAC RCA ca3058

    Abstract: rca ca3240E CA311G CA101AT CA124G sn76013 CA1310 CA555CG Fuji Electric tv schematic diagram 40468A
    Text: RCA Linear Integrated Circuits This DATABOOK contains complete technical information on the full line of RCA standard commercial linear in­ tegrated circuits and MOS field-effect transistors for both industrial and con­ sumer applications. An Index to Devices provides a complete listing of


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    3N209

    Abstract: 3N204 3N205 75G60 ae5 uhf 3n210
    Text: M O T O R O L A SC -CXSTRS/R F> 6367254 Tb MOTOROLA SC D e | l.3L.72S4 D0flSbl3 □ 9 6D 8 2 6 1 3 C X ST R S/ R F D MAXIMUM RATINGS Symbol Value Unit Drain-Source Voltage VDS 25 Vdc Drain-Qate Voltage Vdg 30 Vdc Drain Current Id 50 mA Reverse Gate Current


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    3N204 3N205 J-101) 3N209 3N205 75G60 ae5 uhf 3n210 PDF

    1N6227

    Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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