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    2SA661

    Abstract: RH-16 Produced by Perfect Crystal Device Technology
    Text: 2 s a 661 S /U D ^ P N P Il^ ^ /W & h ^ S t t W C T E S C ^ IL IC O N PNP EPITAXIAL TRANSISTOR PCT PROCESS) O Unit in O D river ° High Stag© and V oltage A m plifier A m plifier A pplications A pplications -50 V CEO e>a t 5 0Q7 fff%. => IX 9 S W •' P c = 6 0 0 m W ( T a = 8 5 ' C )


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    PDF 2sa661 600mW SSC1166 3SC1166 IJI1HH-16 RH-16 RH-16 2SA661 Produced by Perfect Crystal Device Technology