LA5527
Abstract: EN2071C
Text: Ordering number:EN2071C Monolithic Linear IC LA5527 Low-Voltage DC Motor Speed Controller Overview Package Dimensions Especially suited for controlling speed of a low-voltage 3V min. DC motor for cassette tape recorders, 8mm motion-picture cameras, record players.
|
Original
|
EN2071C
LA5527
048A-DIP6
LA5527]
LA5527
EN2071C
|
PDF
|
max 32321
Abstract: LA5528N LA5528NM
Text: Ordering number:EN3232A Monolithic Linear IC LA5528N, 5528NM Low-Voltage DC Motor Speed Controllers Overview Package Dimensions Especially suited for controlling speed of a low-voltage 3V min. DC motor for cassette tape recorders, 8mm motion-picture cameras, record players.
|
Original
|
EN3232A
LA5528N,
5528NM
3001B-DIP8
LA5528N]
LA5528N
LA5528NM
3232B-MFP8
LA5528NM]
max 32321
LA5528N
LA5528NM
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR TIP122 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER APPLICATIONS. FEATURES ・High DC Current Gain : hFE=1000 Min. at VCE=3V, IC=3A. ・High Collector Breakdown Voltage : VCEO=100V(Min.)
|
Original
|
TIP122
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR TIP127 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER APPLICATIONS. FEATURES ・High DC Current Gain : hFE=1000 Min. at VCE=-3V, IC=-3A. ・High Collector Breakdown Voltage : VCEO=-120V(Min.)
|
Original
|
TIP127
-120V
-100V,
-10mA,
-12mA
-20mA
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KTB1423 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER APPLICATIONS. A C P FEATURES B E G High DC Current Gain : hFE=1000 Min. at VCE=-3V, IC=-3A. High Collector Breakdown Voltage : VCEO=-120V (Min.)
|
Original
|
KTB1423
-120V
KTD1413.
|
PDF
|
KTB1423
Abstract: KTD1413
Text: SEMICONDUCTOR KTB1423 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER APPLICATIONS. A C P FEATURES B E G High DC Current Gain : hFE=1000 Min. at VCE=-3V, IC=-3A. High Collector Breakdown Voltage : VCEO=-120V (Min.)
|
Original
|
KTB1423
-120V
KTD1413.
KTB1423
KTD1413
|
PDF
|
KTB1423
Abstract: KTD1413
Text: SEMICONDUCTOR KTB1423 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER APPLICATIONS. A C P E B FEATURES S G ᴌHigh DC Current Gain : hFE=1000 Min. at VCE=-3V, IC=-3A. ᴌHigh Collector Breakdown Voltage : VCEO=-120V (Min.)
|
Original
|
KTB1423
-120V
KTD1413.
KTB1423
KTD1413
|
PDF
|
KTD1413
Abstract: KTB1423
Text: SEMICONDUCTOR KTB1423 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER APPLICATIONS. A C P E B FEATURES S G ᴌHigh DC Current Gain : hFE=1000 Min. at VCE=-3V, IC=-3A. ᴌHigh Collector Breakdown Voltage : VCEO=-120V (Min.)
|
Original
|
KTB1423
-120V
KTD1413.
KTD1413
KTB1423
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR TIP122 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER APPLICATIONS. E A R S F FEATURES P Q D B ᴌHigh DC Current Gain : hFE=1000 Min. at VCE=3V, IC=3A. ᴌHigh Collector Breakdown Voltage : VCEO=100V(Min.)
|
Original
|
TIP122
|
PDF
|
TRANSISTOR tip122
Abstract: TIP122 tip122 data TRANSISTOR tip122 features
Text: SEMICONDUCTOR TIP122 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER APPLICATIONS. E A R S F FEATURES P Q D B ᴌHigh DC Current Gain : hFE=1000 Min. at VCE=3V, IC=3A. ᴌHigh Collector Breakdown Voltage : VCEO=100V(Min.)
|
Original
|
TIP122
TRANSISTOR tip122
TIP122
tip122 data
TRANSISTOR tip122 features
|
PDF
|
TIP127
Abstract: tip127 data
Text: SEMICONDUCTOR TIP127 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER APPLICATIONS. E A R S F FEATURES P Q D B ᴌHigh DC Current Gain : hFE=1000 Min. at VCE=-3V, IC=-3A. ᴌHigh Collector Breakdown Voltage : VCEO=-120V(Min.)
|
Original
|
TIP127
-120V
TIP127
tip127 data
|
PDF
|
Untitled
Abstract: No abstract text available
Text: LOW VOLTAGE DC MOTOR CONTROLLER NJM2606/2606A The NJM2606A is integrated circuit with wide operating supply voltage range for DC motor speed control. Especially, the NJM2606A is suited for 3V or 6V DC motor control. • Absolute M axim um Ratings Ta=25°C
|
OCR Scan
|
NJM2606/2606A
NJM2606A
700mA
500mW
300mW
100msec
|
PDF
|
2SB1641
Abstract: 2SD2526
Text: TOSHIBA 2SD2526 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD2526 Unit in mm HIGH POWER SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS • • High DC Current Gain : hFE = 2000 Min. (VCE = 3V, Ie = 3A) Low Saturation Voltage :
|
OCR Scan
|
2SD2526
2SB1641
2SB1641
2SD2526
|
PDF
|
KTD1413
Abstract: No abstract text available
Text: SEMICONDUCTOR TECHNICAL DATA KTB1423 EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER APPLICATIONS. FEATURES • High DC Current Gain : hFE=1000 Min. at V ce=-3V , IC=-3A . • High Collector Breakdown Voltage : V c eo = _ 120V (Min.)
|
OCR Scan
|
KTB1423
KTD1413.
KTD1413
|
PDF
|
|
|
2SB1641
Abstract: 2SD2526
Text: TO SH IBA 2SD2526 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD2526 Unit in mm HIGH POWER SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS • • • High DC Current Gain : hFE = 2000 Min. (VCE = 3V, Ic = 3A) Low Saturation Voltage :
|
OCR Scan
|
2SD2526
2SB1641
2SB1641
2SD2526
|
PDF
|
tip 127
Abstract: TIP127 tip 127 TRANSISTOR equivalent
Text: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA TIP127 EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER APPLICATIONS. FEATURES • High DC Current Gain : hFE=1000 Min. at VCE=-3V, IC=-3A. • High Collector Breakdown Voltage : VcEO=_120V(Min.)
|
OCR Scan
|
-120V
tip 127
TIP127
tip 127 TRANSISTOR equivalent
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2SB1381 SILICON PNP TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. HAMMER DRIVE, °ULSE MOTOR DRIVE APPLICATIONS. Unit in mm . High DC Current Gain : hFE=1500 Min. (Vc e =-3V, Ic =-2.5A) . Low Saturation Voltage : VcE(sat)=-1.5V(Max.)(Ic=-2.5A) . Complementary to 2SD2079.
|
OCR Scan
|
2SB1381
2SD2079.
|
PDF
|
A1046
Abstract: h10u BA 7515
Text: SILICON NPN TRIPLE DIFFUSED TYPE 2SD2079 HIGH POWER SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS. . High DC Current Gain Unit in 10±0.3 : hFE= 2000 Min. (Vc e =3V, Ic =3A) 03.2 ±0.2 s . Low Saturation Voltage: Vc£(sat)=1.5V(Max.)(Ic “3A)
|
OCR Scan
|
2SD2079
2SB1381.
A1046
h10u
BA 7515
|
PDF
|
TIP122
Abstract: transistor tip 122 equivalent transistor tip122
Text: SEMICONDUCTOR TECHNICAL D A TA KOREA ELECTRONICS CO.,LTD. TIP122 EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER APPLICATIONS. FEATURES • High DC Current Gain : hFE=1000 Min. at VCe=3V, IC=3A. • High Collector Breakdown Voltage : VcEO=100V(Min.)
|
OCR Scan
|
220AB
TIP122
transistor tip 122
equivalent transistor tip122
|
PDF
|
2SD2131
Abstract: No abstract text available
Text: SILICON NPN TRIPLE DIFFUSED TYPE 2SD2131 DARLINGTON POWER HIGH POWER SWITCHING APPLICATIONS. Unit in mm HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS. 10±0.3 . High DC Current Gain #3.2 ±0.2 : hjr]7=2000(Min.) (Vc e =3V, Ic“ 3A) . Low Saturation Voltage: VpE(sat)= 1 •5V(Max.)(Ip=3A)
|
OCR Scan
|
2SD2131
150mJ
2SD2131
|
PDF
|
Untitled
Abstract: No abstract text available
Text: T O SH IB A 2SD2526 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD2526 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS H AM M ER DRIVE, PULSE MOTOR DRIVE APPLICATIONS 10 ± 0.2 • • • i 61.2 High DC Current Gain : hFE = 2000 Min. (Vce = 3V, Ic = 3A)
|
OCR Scan
|
2SD2526
2SB1641
|
PDF
|
KTD1413
Abstract: KTB1423
Text: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR T E C H N IC A L D A T A KTB1423 EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER APPLICATIONS. FEATURES • High DC Current Gain : hFE=1000 Min. at VCE=-3V, IC=-3A. • High Collector Breakdown Voltage : V ceo=_ 120V (Min.)
|
OCR Scan
|
KTB1423
-120V
KTD1413.
KTD1413
KTB1423
|
PDF
|
2SD2131
Abstract: ZENNER
Text: TO SH IBA 2SD2131 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON 2 S D 2 1 31 Unit in mm HIGH POWER SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS 10 ±0.3 r ^3.2 ± 0.2 2.7±Q 2 CO • High DC Current Gain : hFE = 2000 (Min.) (VCE = 3V, Ic = 3A)
|
OCR Scan
|
2SD2131
150mJ
2SD2131
ZENNER
|
PDF
|
Untitled
Abstract: No abstract text available
Text: T O S H IB A 2SD2131 2 S D 2 1 31 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON Unit in mm HIGH PO W ER SWITCHING APPLICATIONS H AM M ER DRIVE, PULSE MOTOR DRIVE APPLICATIONS 10 ±0.3 • High DC Current Gain : hFE = 2000 (Min.) (VCE = 3V, Ic = 3A)
|
OCR Scan
|
2SD2131
150mJ
|
PDF
|
