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    2N7002E

    Abstract: 50uM
    Text: 3VD040060NEJL 3VD040060NEJL 带稳压管ESD保护结构的N沟道MOSFET芯片 描述 Ø 3VD040060NEJL为采用硅外延工艺制造的N 沟道增强型MOS场效应晶体管； Ø 带ESD保护结构，ESD可达1000V（人体模 式）； Ø 采用高密度元胞设计，低导通电阻；


    Original     		3VD040060NEJL 3VD040060NEJL 3VD040060NEJLN ESDESD1000V OT-23 2N7002E 1000A OT-23) 500mA 2N7002E 50uM PDF

    Power MOSFET Wafer

    Abstract: 2N7002E zener wafer
    Text: 3VD040060NEJL 3VD040060NEJL STRUCTURE N-CH MOSFET CHIPS WITH ESD PROTECTED DESCRIPTION Ø 3VD040060NEJL is a N-Channel enhancement mode MOS-FET chip fabricated in advanced silicon epitaxial planar technology. Ø Zener diode ESD protected up to 1000V HBM Ø


    Original     		3VD040060NEJL 3VD040060NEJL OT-23 2N7002E. Power MOSFET Wafer 2N7002E zener wafer PDF