piezo siren
Abstract: KPE-1700
Text: Tolerance:±1.0mm at 30 cm S.P.L dB 110 T4 (VDC) Operating Voltage (VDC) 6 -1 4 Rated Voltage (VDC) 12 Operating Frequency (KHz) 2.0—3.5 Current Consumption at 12VDC (mA,maximun) Sound Pressure Level at 12VDC/30cm (dB.minimun) 130 105 Tone Siren Operating Temperature (*C)
|
OCR Scan
|
12VDC
12VDC/30cm
KPE--1700
UL--94
KS--E--R--026--1
piezo siren
KPE-1700
|
PDF
|
Xa3 TRANSISTOR
Abstract: matsuo
Text: Preliminary Product Description SXA-389 Sirenza Microdevices’ SXA-389 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable
|
Original
|
SXA-389
SXA-389
016REF
118REF
041REF
EDS-102231
Xa3 TRANSISTOR
matsuo
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Preliminary Product Description SXA-389 Sirenza Microdevices’ SXA-389 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable
|
Original
|
SXA-389
SXA-389
016REF
118REF
041REF
EDS-102231
|
PDF
|
Xa3 TRANSISTOR
Abstract: MCH18 SXA-389 SXA-389B SXA-389Z 267M3502104 sxa389z marking SXA389Z XA3Z
Text: SXA-389 SXA-389Z Product Description Sirenza Microdevices’ SXA-389 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology
|
Original
|
SXA-389
SXA-389Z
SXA-389
AN-075
SXA-389B
EDS-102231
Xa3 TRANSISTOR
MCH18
SXA-389B
SXA-389Z
267M3502104
sxa389z marking
SXA389Z
XA3Z
|
PDF
|
xa3b
Abstract: No abstract text available
Text: SXA-389B SXA-389BZ Product Description Sirenza Microdevices’ SXA-389B amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surfacemountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent
|
Original
|
SXA-389B
SXA-389BZ
MPO-100136
016REF
118REF
041REF
015TYP
SXA-389B
EDS-102915
xa3b
|
PDF
|
a3bz
Abstract: marking A3BZ 267M3502104 a3bz MARKING AN-075 MCH18 SXA-389B SXA-389BZ Sirenza amplifier SOT-89 MMIC SXA 389Bz marking
Text: SXA-389B SXA-389BZ Product Description Sirenza Microdevices’ SXA-389B amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surfacemountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent
|
Original
|
SXA-389B
SXA-389BZ
SXA-389B
AN-075
EDS-102915
a3bz
marking A3BZ
267M3502104
a3bz MARKING
AN-075
MCH18
SXA-389BZ
Sirenza amplifier SOT-89
MMIC SXA 389Bz marking
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Preliminary NGA-686 Product Description Sirenza Microdevices NGA-686 is a high performance Gallium Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. Designed with InGaP process technology for improved reliability, a Darlington configuration is utilized for broadband performance
|
Original
|
NGA-686
NGA-686
DC-6000
AN-059
EDS-101106
|
PDF
|
Siren Sound Generator 7 sound
Abstract: cmos sound generator 8 pin sound chip ic alarm sound generator Siren Sound Generator 5 sound utc sound generator siren 6 tone Siren Sound Generator 4 sound Siren alarm sound
Text: UNISONIC TECHNOLOGIES CO., LTD 1617 CMOS IC 6 TONES SIREN/ALARM SOUND GENERATOR DESCRIPTION The UTC 1617 is a CMOS design for 6 different alarm sounds application. The sound of UTC 1617 will be generated in cycling sequence. By the way, UTC 1617 is also partitioned to 6 types for single
|
Original
|
1617B:
1617C:
1617D:
1617E:
1617F:
QW-R502-016
Siren Sound Generator 7 sound
cmos sound generator
8 pin sound chip ic
alarm sound generator
Siren Sound Generator 5 sound
utc sound generator
siren 6 tone
Siren Sound Generator 4 sound
Siren
alarm sound
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Preliminary NGA-386 Product Description Sirenza Microdevices NGA-386 is a high performance Gallium Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. Designed with InGaP process technology for improved reliability, a Darlington configuration is utilized for broadband performance
|
Original
|
NGA-386
NGA-386
DC-5000
AN-059
1950Mhz
EDS-101103
|
PDF
|
1485C
Abstract: SE 194 Sirenza amplifier SOT-89
Text: Product Description Sirenza Microdevices’ SXA-389B amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable
|
Original
|
SXA-389B
SXA-389B
MPO-100136
016REF
118REF
041REF
015TYP
EDS-102915
1485C
SE 194
Sirenza amplifier SOT-89
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Preliminary NGA-286 Product Description Sirenza Microdevices NGA-286 is a high performance Gallium Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. Designed with InGaP process technology for improved reliability, a Darlington configuration is utilized for broadband performance up
|
Original
|
NGA-286
NGA-286
DC-6000
AN-059
EDS-101102
|
PDF
|
1617c
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 1617 CMOS IC 6 TONES SIREN/ALARM SOUND GENERATOR DESCRIPTION The UTC 1617 is a CMOS design for 6 different alarm sounds application. The sound of UTC 1617 will be generated in cycling sequence. By the way, UTC 1617 is also partitioned to 6 types for single
|
Original
|
1617B:
1617C:
1617D:
1617E:
1617Fat
QW-R502-016
1617c
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Preliminary NGA-186 Product Description Sirenza Microdevices NGA-186 is a high performance Gallium Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. Designed with InGaP process technology for improved reliability, a Darlington configuration is utilized for broadband performance up
|
Original
|
NGA-186
NGA-186
DC-6000
AN-059
1950Mhz
EDS-101101
|
PDF
|
transistor 20 dB 2400 mhz
Abstract: No abstract text available
Text: Preliminary NGA-186 Product Description Sirenza Microdevices NGA-186 is a high performance Gallium Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. Designed with InGaP process technology for improved reliability, a Darlington configuration is utilized for broadband performance up
|
Original
|
NGA-186
NGA-186
DC-6000
AN-059
EDS-101101
transistor 20 dB 2400 mhz
|
PDF
|
|
SIRENZA MARKING
Abstract: No abstract text available
Text: Preliminary NGA-689 Product Description Sirenza Microdevices NGA-689 is a high performance Gallium Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. Designed with InGaP process technology for improved reliability, a Darlington configuration is utilized for broadband performance
|
Original
|
NGA-689
NGA-689
DC-5000
AN-059
EDS-101442
SIRENZA MARKING
|
PDF
|
267M3502104K
Abstract: 2425-C
Text: Preliminary Product Description SXB-4089 Sirenza Microdevices’ SXB-4089 amplifier is a high efficiency InGaP/ GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost, surface-mountable plastic package. 400-2500 MHz ½ W Medium Power InGaP/GaAs HBT Amplifier with
|
Original
|
SXB-4089
SXB-4089
45propriate
MPO-100136
016REF
118REF
041REF
015TYP
EDS-103215
267M3502104K
2425-C
|
PDF
|
RF AMP marking c7 sot-89
Abstract: marking 25 mmic sot-89 9C0603 ordering Sirenza amplifier SOT-89 Marking
Text: Preliminary Product Description SXB-4089 Sirenza Microdevices’ SXB-4089 amplifier is a high efficiency InGaP/ GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost, surface-mountable plastic package. 400-2500 MHz ½ W Medium Power InGaP/GaAs HBT Amplifier with
|
Original
|
SXB-4089
SXB-4089
45propriate
MPO-100136
016REF
118REF
041REF
015TYP
EDS-103215
RF AMP marking c7 sot-89
marking 25 mmic sot-89
9C0603 ordering
Sirenza amplifier SOT-89 Marking
|
PDF
|
IN5392
Abstract: ic siren Siren Sound Generator 7 sound IC772 alarm sound generator Siren Sound Generator 4 sound Siren Sound Generator 5 sound utc1617 1617E
Text: UTC 1617 CMOS IC 6 TONES SIREN/ALARM SOUND GENERATOR DESCRIPTION The UTC 1617 is a CMOS design for 6 different alarm sounds application. The sound of UTC 1617 will be generated in cycling sequence. By the way, UTC 1617 is also partitioned to 6 types for single
|
Original
|
1617B:
1617C:
1617D:
1617E:
1617F:
QW-R502-016
IN5392
ic siren
Siren Sound Generator 7 sound
IC772
alarm sound generator
Siren Sound Generator 4 sound
Siren Sound Generator 5 sound
utc1617
1617E
|
PDF
|
IC-276
Abstract: 25c2625
Text: Preliminary Product Description SPA-2318 Sirenza Microdevices’ SPA-2318 is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial
|
Original
|
SPA-2318
SPA-2318
IS-95
EDS-101432
IC-276
25c2625
|
PDF
|
9v 68
Abstract: No abstract text available
Text: Preliminary Preliminary SCA-4 Product Description Sirenza Microdevices SCA-4 is a high performance Gallium Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration is utilized for broadband performance up to 4 GHz. The heterojunction increases breakdown voltage
|
Original
|
EDS-101394
9v 68
|
PDF
|
XA2 MMIC
Abstract: MPO-100136 TOP MARKING C1 ROHM lot No
Text: Preliminary Product Description SXA-289 Sirenza Microdevices’ SXA-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable
|
Original
|
SXA-289
SXA-289
MPO-100136
016REF
118REF
041REF
015TYP
EDS-100622
XA2 MMIC
TOP MARKING C1 ROHM lot No
|
PDF
|
SUF-1000
Abstract: DC-20
Text: Preliminary SUF-1000 DC-20 GHz, Cascadable pHEMT MMIC Amplifier Product Description Sirenza Microdevices’ SUF-1000 is a monolithically matched high IP3 broadband pHEMT MMIC amplifier. The self-biased direct-coupled topology provides exceptional cascadable performance from DC-20
|
Original
|
SUF-1000
DC-20
SUF-1000
DC-20
EDS-105415
|
PDF
|
SUF-4000
Abstract: 15 GHz high power amplifier
Text: Preliminary SUF-4000 Product Description Sirenza Microdevices’ SUF-4000 is a monolithically matched broadband high IP3 gain block covering 0.15-10 GHz. This pHEMT FET-based amplifier uses a patented self-bias Darlington topology featuring a gain and temperature compensating active bias network that operates from
|
Original
|
SUF-4000
SUF-4000
EDS-105418
15 GHz high power amplifier
|
PDF
|
XA2 MMIC
Abstract: TOP MARKING C1 ROHM lot No MPO-100136 SIRENZA Sirenza C4 marking
Text: Preliminary Product Description SXA-289 Sirenza Microdevices’ SXA-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable
|
Original
|
SXA-289
SXA-289
MPO-100136
016REF
118REF
041REF
015TYP
EDS-100622
XA2 MMIC
TOP MARKING C1 ROHM lot No
SIRENZA
Sirenza C4 marking
|
PDF
|