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    4-071 TRANSISTOR Search Results

    4-071 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    CA3082 Rochester Electronics LLC CA3082 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC CA3081 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation

    4-071 TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: 0 OPTEK Product Bulletin HCT7000M January 1996 N-Channel Enhancement Mode MOS Transistor Type HCT7000M, HCT7000MTX, HCT7000MTXV .0 3 6 ( 0 . 9 1 .02 4 ( 0 . 6 1 ) I 3 à -024 ( 0 .6 1 ) .01 6 ( 0 . 4 1 ) J * .0 7 8 (1 .9 6 ) .0 2 3 ( 0 . 5 6 ) .071 .03 9 ( 0 . 9 9 )


    OCR Scan     		HCT7000M HCT7000M, HCT7000MTX, HCT7000MTXV 200mA PDF

    PT-8502

    Abstract: 2N5928 TO114 D741D 350w dc motor Powertech DDGQ310 PT8502 LJ15 PT850
    Text: 17E D • 72^071=4 GDGDBCH b POÜJERTECH INC “BIG IDEAS IN BIG POWER" ■ ■ ■ PowerTech -p ■ 150 AMPERES 2N592B PT-B502 SILICON IN IPINI TRANSISTOR FEATURES: v C E s a t . 1.0 V 100 A V B E . 2.0 V @ 100 A


    OCR Scan     		721fl7L 2N592B O-114 Lj-15 QJ-2NS552 IC-50A PT-8502 2N5928 TO114 D741D 350w dc motor Powertech DDGQ310 PT8502 LJ15 PT850 PDF

    2N7000

    Abstract: HCT7000M HCT7000MTX HCT7000MTXV
    Text: 0 . OPTEK Product Bulletin HCT7000M January 1996 N-Channel Enhancement Mode MOS Transistor Type HCT7000M, HCT7000MTX, HCT7000MTXV .036 0 .9 I .024 (0 .6 l ) I 3 .023 (0.5a) .078 t I .98) .071 (1.80) .0 3 9 (0.99) .0 3 5 (0.88) (0 .4 3 ) 3 T o r a in •JE


    OCR Scan     		HCT7000M HCT7000M, HCT7000MTX, HCT7000MTXV 200mA 2N7000. ooo32n 2N7000 HCT7000MTX HCT7000MTXV PDF

    sb 050 D 331

    Abstract: Transistor sb 050 D
    Text: SLOTTED OPTICAL SWITCH OPTOELECTRONICS QVE11233 PACKAGE DIMENSIONS 175 4 45’ L 250 (6 35 I_ — r* 331 (6 3S) .071 (1.70) J_ _ Lead spacing .300". Gap width of .150". Printed circuit board mounting. 2 mm aperture width. 350 <8 SB) MIN J_ _ _ •SEE NOTE 3


    OCR Scan     		QVE11233 QVE11233 ST2176 sb 050 D 331 Transistor sb 050 D PDF

    intel 945 motherboard schematic diagram

    Abstract: intel 915 MOTHERBOARD pcb CIRCUIT diagram PC intel 945 MOTHERBOARD CIRCUIT diagram INTEL 845 MOTHERBOARD CIRCUIT diagram 845 MOTHERBOARD display problems CIRCUIT diagram 845 MOTHERBOARD CIRCUIT diagram intel 845 MOTHERBOARD pcb CIRCUIT diagram intel 915 motherboard schematic 945 MOTHERBOARD CIRCUIT diagram usb M38802m2
    Text: ORDER NO. CPD0111006C1 Personal Computer CF-07 This is the Service Manual for the following areas. M …for U.S.A. Model Number Reference The following models are numbered in accordance with the types of CPU and HDD etc. featured by product. Model No. CF-071 Z 2 ZY3 4


    Original     		CPD0111006C1 CF-07 CF-071 intel 945 motherboard schematic diagram intel 915 MOTHERBOARD pcb CIRCUIT diagram PC intel 945 MOTHERBOARD CIRCUIT diagram INTEL 845 MOTHERBOARD CIRCUIT diagram 845 MOTHERBOARD display problems CIRCUIT diagram 845 MOTHERBOARD CIRCUIT diagram intel 845 MOTHERBOARD pcb CIRCUIT diagram intel 915 motherboard schematic 945 MOTHERBOARD CIRCUIT diagram usb M38802m2 PDF

    Victory Engineering Thermistor

    Abstract: VECO Thermistor victory engineering corporation VECO thermistors Victory Engineering
    Text: VICTORY ENGINEERING COR 74C 0 / 1483075 0Q00704 071 T-H-2S- VICTORY ENGINEERING CORPORATION VI CT ORY ROAD, P.O. BOX 559, S P R I N G F I E L D , NEW J ERSEY 07081 T W X : 7 1 0 -3 3 3 -4 -4 3 0 TEL: 201 • 3 7 3 -5 3 0 0 V E C O T E C H N IC A L B U L L E T IN M SV111


    OCR Scan     		0Q00704 SV111 SV100A3 SV100A3 SV100 Victory Engineering Thermistor VECO Thermistor victory engineering corporation VECO thermistors Victory Engineering PDF

    Untitled

    Abstract: No abstract text available
    Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 PNP SMALL SIGNAL SILICON TRANSISTOR


    Original     		MIL-PRF-19500/511 2N4261 2N4261UB 2N4261UBC T4-LDS-0150 PDF

    2N4261 equivalent

    Abstract: 2N4261 2N4261UB
    Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 PNP SMALL SIGNAL SILICON TRANSISTOR


    Original     		MIL-PRF-19500/511 2N4261 2N4261UB 2N4261UBC T4-LDS-0150 2N4261 equivalent 2N4261 2N4261UB PDF

    MICROSEMI 2N2907A

    Abstract: 2N2907A surface mount 2N2907AUB equivalent 2N2907A 2N2906AUBC 2N2906A 2N2906AL 2N2906AUA 2N2906AUB 2N2907A
    Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com PNP SMALL SIGNAL SILICON TRANSISTOR Qualified per MIL-PRF-19500/291 DEVICES LEVELS 2N2906A 2N2906AL 2N2906AUA 2N2906AUB


    Original     		MIL-PRF-19500/291 2N2906A 2N2906AL 2N2906AUA 2N2906AUB 2N2906AUBC 2N2907A 2N2907AL 2N2907AUA 2N2907AUB MICROSEMI 2N2907A 2N2907A surface mount 2N2907AUB equivalent 2N2907A 2N2906AUBC 2N2906A 2N2906AL 2N2906AUA 2N2906AUB 2N2907A PDF

    2N2484UB

    Abstract: 500ADC 2n2484 equivalent 2N2484UA
    Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 NPN SILICON LOW POWER TRANSISTOR


    Original     		MIL-PRF-19500/376 2N2484 2N2484UA 2N2484UB 2N2484UBC 2N2484UBC) T4-LDS-0058 500ADC 2n2484 equivalent 2N2484UA PDF

    2N2906AUBC

    Abstract: 2n2907aub equivalent 2N2907A 2n2907a IC tl 495 325 MMC 2N2906A 2N2906AL 2N2906AUA 2N2906AUB
    Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/291 DEVICES LEVELS 2N2906A 2N2906AL


    Original     		MIL-PRF-19500/291 2N2906A 2N2906AL 2N2906AUA 2N2906AUB 2N2906AUBC 2N2907A 2N2907AL 2N2907AUA 2N2907AUB 2N2906AUBC 2n2907aub equivalent 2N2907A 2n2907a IC tl 495 325 MMC 2N2906A 2N2906AL 2N2906AUA 2N2906AUB PDF

    2SK1407

    Abstract: transistor tt 2141
    Text: N "7 > V 7 s$ /Transistors 9QK1dA7 I "*W 2SK1407 1 £ ^ hemt Low Noise High Electron Mobility Transistor f • fl-J fi\H £ 0 /D im e n s io n s Unit: mm 2SK1407 l i , MBE (Molecular Beam Epitaxy) t i t HEM TT i T to >/•?— % £ L T fS ¡SIC 12GHzDBS


    OCR Scan     		2SK1407 2SK1407 12GHzDBS transistor tt 2141 PDF

    2SK1407

    Abstract: No abstract text available
    Text: ROHM CO LTD 4DE D • 7 0 2 f l cm OGQhMMb 2 B R H M h 7 > v X £ /Transistors 2SK1407 ‘ 2SSC1407 Low Noise High Electron Mobility Transistor • 2SK1407 i , ~ 7 ^3 / ~ 2 S ' \f iiH /D im e n s io n s (Unit: mm M BE (Molecular Beam Epitaxy) H E M T T -fo


    OCR Scan     		02flc 2SK1407 2SSC1407 2SK1407 PDF

    TL 2N2222A npn transistor

    Abstract: MICROSEMI 2N2222A MICROSEMI 2N2222Aub 2N2222AUB MMC 325 2N2221A 2N2221AL 2N2221AUA 2N2221AUB 2N2222A
    Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/255 DEVICES LEVELS 2N2221A 2N2221AL


    Original     		MIL-PRF-19500/255 2N2221A 2N2221AL 2N2221AUA 2N2221AUB 2N2221AUBC 2N2222A 2N2222AL 2N2222AUA 2N2222AUB TL 2N2222A npn transistor MICROSEMI 2N2222A MICROSEMI 2N2222Aub 2N2222AUB MMC 325 2N2221A 2N2221AL 2N2221AUA 2N2221AUB 2N2222A PDF

    Untitled

    Abstract: No abstract text available
    Text: TARGET DATA SHEET ECM051 4 X 4 mm Dual Mode Cellular Band CDMA 3.5V POWER AMPLIFIER MODULE Description Features The ECM051 is a 10 signal pin 4 X 4 mm dual mode power amplifier module at 3.5V Vcc with high efficiency. This device was developed using EiC’s proprietary InGaP Gallium Arsenide Heterojunction Bipolar Transistor HBT process. It is optimized for cellular CDMA (digital) and AMPS


    Original     		ECM051 ECM051 SS-000505-000 PDF

    2N2369AUBC

    Abstract: 2N2369AU
    Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 NPN SILICON TRANSISTOR


    Original     		MIL-PRF-19500/317 2N2369A 2N2369AU 2N2369AUA 2N2369AUB 2N2369AUBC 2N4449 2N2369A; 2N4449 2N2369AU) 2N2369AUBC PDF

    14DK471

    Abstract: 07DK391 20dk431 SiC varistor 14DK431 sec 472 varistor varistor ve 17 varistor 471 14 10DK271 varistor 7 k 471
    Text: TYPE VSA VARISTORS TRANSIENT / SURGE ABSORBER APPLICATIONS FEATURES Transistor, diode, IC, thyristor and triac semiconductor protection, lurge protection in consumer electronics, lurge protection in industrial electronics. Jurge protection in communication, measuring and


    OCR Scan     		Vcat20Â 14DK471 07DK391 20dk431 SiC varistor 14DK431 sec 472 varistor varistor ve 17 varistor 471 14 10DK271 varistor 7 k 471 PDF

    ERZC14DK911

    Abstract: 15g470km ERZ-C20DK112 ERZ-C05DK201u varistor tnr TNR15G470K TNR G Series ERZC07DK471 10DK471 15G470K
    Text: TYPE VSA VARISTORS TRANSIENT / SURGE ABSORBER APPLICATIONS FEATURES Transistor, diode, IC, thyristor and triac semiconductor protection. Surge protection in consumer electronics. Surge protection in industrial electronics. Surge protection in communication, measuring and


    OCR Scan     		18vto zAC14DK911 tVSAC20DK911 ERZ-C10DK911 ERZ-C14DK911 ERZ-C20DK911 AC10DK102 tVSAC14DK102 fVSAC20DK102 ERZ-C10DK102 ERZC14DK911 15g470km ERZ-C20DK112 ERZ-C05DK201u varistor tnr TNR15G470K TNR G Series ERZC07DK471 10DK471 15G470K PDF

    multispring

    Abstract: ASTM-B16 MIL-T-10727
    Text: M55-S-NPS Final 10-08:M55 -NPS final revise 8-08 11/20/08 9:23 AM Page 4 MICRO MICROJACKS PINS • Space saving design for high density packaging • Beryllium Copper multi-spring contact maintains retention after multiple insertions • Ideal for mounting transistors,


    Original     		M55-S-NPS ASTM-B16 QQ-C-533) MIL-T-10727, Gold/101 multispring ASTM-B16 MIL-T-10727 PDF

    Untitled

    Abstract: No abstract text available
    Text: Central' Semiconductor Corp. CXT5551 NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CXT5551 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage amplifier applications.


    OCR Scan     		CXT5551 CXT5551 OT-89 100MHz 200mA, PDF

    mdd 1051

    Abstract: circuit k 3683 916c Transistors marking WZ ke marking transistor transistor xl 3001 S9614
    Text: . . . . . . . .l: :;. . . . . . . . . . . . . . . . . .’. . . . . . . . MIIA3.1950W9B 12 Ne.rch 1970 SUPERSEDING MIL.T.1950W9A 12 hub? 19s9 MSLITARY SPfXfFffXTfON .-. SFADCONDUCTOR DEVICE, TRANSISTOR, PNP, GBfMi14NIUM, HIGH-FREQUENCY


    Original     		1950W9B 1950W9A GBfMi14NIUM, UG-491AW 91-6C S-1950W9B Force-11 s9614163) mdd 1051 circuit k 3683 916c Transistors marking WZ ke marking transistor transistor xl 3001 S9614 PDF

    Untitled

    Abstract: No abstract text available
    Text: Central C BCX68NPN C B C X 6 9 PNP semiconductor Corp. SILICON COMPLEMENTARY SMALL SIGNAL TRANSISTORS DESCRIPTION The CENTRAL SEMICONDUCTOR CBCX68, CBCX69 types are complem entary silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount


    OCR Scan     		BCX68NPN CBCX68, CBCX69 OT-89 500mA 20MHz PDF

    SOT363-6

    Abstract: No abstract text available
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MMDT3904 Features • • • Surface Mount SOT-363 Package Capable of 200mWatts of Power Dissipation Marking: K6N Plastic-Encapsulate Transistors


    Original     		MMDT3904 OT-363 200mWatts 30Vdc, 10mAdc, 50mAdc, OT-363 65Nominal SOT363-6 PDF

    H118

    Abstract: No abstract text available
    Text: Central Semicon ftuetor Corp. CXT5551 NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CXT5551 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage amplifier applications,


    OCR Scan     		CXT5551 CXT5551 OT-89 TA-250C) SA10mA lC-50mA 100MHz 200mA, H118 PDF