KSR1001
Abstract: KSR2001
Text: KSR1001 KSR1001 Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=4.7KΩ, R2=4.7KΩ) • Complement to KSR2001 TO-92 1 1. Emitter 2. Collector 3. Base Equivalent Circuit
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KSR1001
KSR2001
KSR1001
KSR2001
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BF190
Abstract: DRA2143T
Text: DRA2143T Spice Parameter Reference Total pages page 1 1 Device symbol Product name: DRA2143T C Product type: Transistor with Built-in Resistor PNP R1 B E Parameters *$ .SUBCKT DRA2143T E B C R_R1 B IN 4.7k Q_Q1 C IN E QN1 .MODEL QN1 PNP + IS=20.000E-15 + BF=190
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DRA2143T
DRA2143T
000E-15
00E-18
2987E-3
15E-15
0000E-12
4730E-12
79E-12
BF190
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980020-48-P2
Abstract: 7SDMM-B0-2211-A MT29F8G08AAAWP mt29f2g08aadwp MT29F8G08A 7SDMM-B0-2211 MT29F2G08AAD 7SDMM MT29F4G08ABCWC MT29F4G08ABCWC-et
Text: SCH-VAL313x-01 01 NXP Semiconductors LPC313x Validation Board Schematics 1 05 Initial release 09/29/08 02 Corrected EBI Static nCS1 Addrs Space table, sht 13 10/16/08 03 Change pull-up value on GPIO0, GPIO1 & GPIO2 to 4.7k; sht 7 01/22/09 04 Tie LPC313x pin K11 to SUP3;
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SCH-VAL313x-01
LPC313x
LPC314x
GPIO19;
GPIO20
980020-48-P2
7SDMM-B0-2211-A
MT29F8G08AAAWP
mt29f2g08aadwp
MT29F8G08A
7SDMM-B0-2211
MT29F2G08AAD
7SDMM
MT29F4G08ABCWC
MT29F4G08ABCWC-et
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BCR162
Abstract: No abstract text available
Text: BCR162 PNP Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor R1=4.7k, R2=4.7k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07183 Type Marking BCR162 WUs Pin Configuration 1=B 2=E Package 3=C SOT23
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BCR162
VPS05161
EHA07183
Nov-29-2001
BCR162
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BCR112W
Abstract: VSO05561
Text: BCR112W NPN Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, driver circuit Built in resistor R 1=4.7k, R 2=4.7k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07184 Type Marking BCR112W WFs Pin Configuration 1=B 2=E Package 3=C SOT323
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BCR112W
VSO05561
EHA07184
OT323
Nov-29-2001
BCR112W
VSO05561
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KSR1201
Abstract: KSR2201
Text: KSR1201 KSR1201 Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1 =4.7KΩ, R2=4.7KΩ) • Complement to KSR2201 TO-92S 1 1.Emitter 2. Collector 3. Base Equivalent Circuit
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KSR1201
KSR2201
O-92S
KSR1201
KSR2201
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1N4148
Abstract: 2N3904 2N3906 E200II E2202C
Text: Endicott Research Group, Inc. 3 Dimming Options E2202C 2601 Wayne St., Endicott NY 13760 607-754-9187 Fax 607-754-9255 http://www.ergpower.com 5% - 100% +Vin Specifications and Applications Information 4.7K Ω approx. 1.5 ms* * should be selected to be compatible with
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E2202C
E200II
2N3906
2N3904
1N4148
1N4148
2N3904
2N3906
E2202C
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Untitled
Abstract: No abstract text available
Text: BCR 569 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=4.7kΩ Type Marking Ordering Code Pin Configuration BCR 569 XLs 1=B UPON INQUIRY Package 2=E 3=C SOT-23 Maximum Ratings
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OT-23
Nov-27-1996
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BCR569
Abstract: No abstract text available
Text: BCR569 PNP Silizium Digital Transistor 3 Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor R1 = 4.7k 2 C 3 1 R1 1 2 B E VPS05161 EHA07180 Type Marking BCR569 XLs Pin Configuration 1=B 2=E Package 3=C SOT23 Maximum Ratings
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BCR569
VPS05161
EHA07180
Dec-13-2001
BCR569
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Untitled
Abstract: No abstract text available
Text: KSR1014 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In TO-92 • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=4.7KΩ, R2=47KΩ) • Complement to KSR2014 ABSOLUTE MAXIMUM RATINGS (TA=25°°C)
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KSR1014
KSR2014
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Untitled
Abstract: No abstract text available
Text: KSR2201 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1 =4.7KΩ, R2=4.7KΩ) • Complement to KSR1201 TO-92S ABSOLUTE MAXIMUM RATINGS (TA=25°°C)
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KSR2201
KSR1201
O-92S
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Untitled
Abstract: No abstract text available
Text: KSR2009 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R=4.7KΩ) • Complement to KSR1009 TO-92 ABSOLUTE MAXIMUM RATINGS (TA=25°°C)
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KSR2009
KSR1009
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FJX3009R
Abstract: FJX4009R
Text: FJX3009R FJX3009R Switching Application Bias Resistor Built In 3 • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R=4.7KΩ) • Complement to FJX4009R 2 1 SOT-323 1. Base 2. Emitter 3. Collector Equivalent Circuit
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FJX3009R
FJX4009R
OT-323
FJX3009R
FJX4009R
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FJX3009R
Abstract: FJX4009R
Text: FJX3009R FJX3009R Switching Application Bias Resistor Built In 3 • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R=4.7KΩ) • Complement to FJX4009R 2 1 SOT-323 1. Base 2. Emitter 3. Collector Equivalent Circuit
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FJX3009R
FJX4009R
OT-323
FJX3009R
FJX4009R
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FJX3001R
Abstract: FJX4001R S51B
Text: FJX4001R FJX4001R 3 Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=4.7KΩ, R2=4.7KΩ) • Complement to FJX3001R 2 1 SOT-323 1. Base 2. Emitter 3. Collector
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FJX4001R
FJX3001R
OT-323
FJX3001R
FJX4001R
S51B
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si2301
Abstract: ms6308 SPL10A sunplus mp3 FM17 SPL10A4 RT9266CE usbdm RT9266 SEG22
Text: 1 2 3 4 5 6 R42 VDDADC D R3 10K IOCD0 IOCD1 IOCD2 IOCD3 60 1 2 3 4 UI_STB 5 IOEF0 IOEF1 IOEF2 IOEF3 IOEF4 IOEF5 6 7 IOAB0 IOAB1 8 9 10 11 12 13 14 15 16 17 103 R32 1K 103 R19 C30 100K 390P C29 Bead ADCGND R33 4.7K C4 57 104 MIC1 103 2.2nF C18 47uF VDD_LCD
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VDD30
100pF
SEG21
SEG20
SEG19
SEG18
SEG17
SEG16
SEG15
SEG14
si2301
ms6308
SPL10A
sunplus mp3
FM17
SPL10A4
RT9266CE
usbdm
RT9266
SEG22
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Untitled
Abstract: No abstract text available
Text: FJV4101R FJV4101R Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=4.7KΩ, R2=4.7KΩ) • Complement to FJV3101R 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector
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FJV4101R
FJV3101R
OT-23
OT-23
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Untitled
Abstract: No abstract text available
Text: KSR2005 KSR2005 Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=4.7KΩ, R2=10KΩ) • Complement to KSR1005 TO-92 1 1. Emitter 2. Collector 3. Base Equivalent Circuit
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KSR2005
KSR1005
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Untitled
Abstract: No abstract text available
Text: FJNS4201R FJNS4201R Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=4.7KΩ, R2=4.7KΩ) • Complement to FJNS3201R TO-92S 1 1.Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor
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FJNS4201R
FJNS3201R
O-92S
O-92S
FJNS4201RTA
FJNS4201RBU
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2SC3900
Abstract: EN3292
Text: Ordering number : EN3292 FC 138 NPN Epitaxial P lanar Silicon Composite Transistor Switching Applications with Bias Resistance F eatu re s •On-chip bias resistance (R1 = 4.7kQ) • Composite type with 2 transistors contained in the CP package currently in use, im proving the
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EN3292
FC138
2SC3900,
2SC3900
EN3292
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XS marking code
Abstract: No abstract text available
Text: SIEMENS BCR 569 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=4.7kQ JL TT BCR 569 XLs Pin Configuration UPON INQUIRY 1=B Package 2= E o Marking Ordering Code II co Type IT
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OT-23
XS marking code
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519 MARKING CODE
Abstract: 519 SOT23
Text: SIEMENS BCR 519 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=4.7k£2 FI nr let Ordering Code Pin Configuration XKs UPON INQUIRY 1=B Package m Marking BCR 519 fO II Type 3=C
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OT-23
519 MARKING CODE
519 SOT23
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Untitled
Abstract: No abstract text available
Text: Ordering number : EN3290 _ No.3290 r FC 136 NPN Epitaxial Planar Silicon Composite Transistor Switching Applications with Bias Resistance F eatures • On-chip bias resistance (RX = 4.7kfl) • Composite type with 2 transistors contained in the CP package currently in use, improving the
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EN3290
FC136
2SC3900,
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2SC4133
Abstract: 2SA1591 C4133
Text: I Ordering num ber: E N 2 5 1 5 2SA1591/2SC4133 PNP/ NPN EpitaxialPlanarSiliconTransistors S A X Y O i Switching Applications _ with Bias Resistance Applications . Switching circuit, inverter circuit, interface circuit, driver circuit Features . On-chip bias resistance (Ri=4.7kO,R2=47kO)
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EN2515
2SA1591/2SC4133
2sa1591
2034/2034A
SC-43
7tlt17D7b
2SC4133
C4133
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