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    400N06 Search Results

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    400N06 Price and Stock

    ROHM Semiconductor RSJ400N06TL

    MOSFET N-CH 60V 40A LPTS
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    DigiKey RSJ400N06TL Digi-Reel 53 1
    • 1 $3.38
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    RSJ400N06TL Cut Tape 53 1
    • 1 $3.38
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    RSJ400N06TL Reel 1,000
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    Cornell Dubilier Electronics Inc 383LX102M400N062

    CAP ALUM 1000UF 20% 400V SNAP TH
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    DigiKey 383LX102M400N062 Bulk 48 1
    • 1 $23.77
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    Bristol Electronics 383LX102M400N062 5
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    TTI 383LX102M400N062 Bulk 50
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    Master Electronics 383LX102M400N062 192
    • 1 $25.28
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    • 100 $14.82
    • 1000 $13.84
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    ROHM Semiconductor RSJ400N06FRATL

    MOSFET N-CH 60V 40A LPTS
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    DigiKey RSJ400N06FRATL Reel 1,000
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    Mouser Electronics RSJ400N06FRATL 2,328
    • 1 $2.13
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    Newark RSJ400N06FRATL Cut Tape 1
    • 1 $2.33
    • 10 $1.56
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    TME RSJ400N06FRATL 1
    • 1 $1.56
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    Ameya Holding Limited RSJ400N06FRATL 125 1
    • 1 $0.95
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    Avnet Silica RSJ400N06FRATL 19 Weeks 1,000
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    Chip1Stop RSJ400N06FRATL Cut Tape 677
    • 1 $1.38
    • 10 $0.889
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    Cornell Dubilier Electronics Inc 382LX102M400N062

    CAP ALUM 1000UF 20% 400V SNAP TH
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    Cornell Dubilier Electronics Inc 382LX122M400N062

    CAP ALUM 1200UF 20% 400V SNAP TH
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    400N06 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    400N06N

    Abstract: D27D27 DIODE D27
    Text: 400N06N G OptiMOS Power-Transistor Product Summary Features • For fast switching converters and sync. rectification • N-channel enhancement - normal level V DS 60 V R DS on ,max 40 mΩ ID 27 A • 175 °C operating temperature • Avalanche rated


    Original
    IPD400N06N PG-TO252-3 400N06N PG-TO252-3: 400N06N D27D27 DIODE D27 PDF

    IGBT cross reference semikron eupec

    Abstract: 150Ne120 FZ800R16KF4 MG200J2YS50 mitsubishi IGBT cross reference semikron Eupec Power Semiconductors IGBT mitsubishi mg300j2ys50 MBM200GS12 FZ1600R12KF4 MG200Q2YS40
    Text: IGBT Module Cross Reference DS5468 IGBT Module Cross Reference DS5468-2.0 October 2002 Manufacturer Dimensions Configuration Vces V Ic dc (A) Dynex Part No. FZ1200R33KF2 Module Part No. EUPEC 140x190 SINGLE 3300 1200 DIM1200ESM33 FZ1600R12KF4 EUPEC 140x130


    Original
    DS5468 DS5468-2 FZ1200R33KF2 140x190 DIM1200ESM33 FZ1600R12KF4 140x130 DIM1600FSM12 FF400R12KF4 IGBT cross reference semikron eupec 150Ne120 FZ800R16KF4 MG200J2YS50 mitsubishi IGBT cross reference semikron Eupec Power Semiconductors IGBT mitsubishi mg300j2ys50 MBM200GS12 FZ1600R12KF4 MG200Q2YS40 PDF

    400N06N

    Abstract: 400N06 D27D27 IPD400N06N DIODE D27 F27AT
    Text: 400N06N G OptiMOS Power-Transistor Product Summary Features • For fast switching converters and sync. rectification • N-channel enhancement - normal level V DS 60 V R DS on ,max 40 mΩ ID 27 A • 175 °C operating temperature • Avalanche rated


    Original
    IPD400N06N PG-TO252-3 400N06N PG-TO252-3 400N06 D27D27 DIODE D27 F27AT PDF

    400n06n

    Abstract: DIODE D27 IPD400N06N 400n06
    Text: 400N06N G OptiMOS Power-Transistor Product Summary Features • For fast switching converters and sync. rectification • N-channel enhancement - normal level V DS 60 V R DS on ,max 40 mΩ ID 27 A • 175 °C operating temperature • Avalanche rated


    Original
    IPD400N06N PG-TO252-3 400N06N 400n06n DIODE D27 400n06 PDF

    IGBT cross reference semikron eupec

    Abstract: IGBT cross reference semikron 2MBI 200NB-120 IGBT Eupec 150Ne120 MG200J2YS50 mitsubishi MG100Q2YS51 MG400Q1US41 igbt mitsubishi FZ800R16KF4 MG200Q2YS40
    Text: IGBT Module Cross Reference DS5468 IGBT Module Cross Reference DS5468-2.0 October 2002 Manufacturer Dimensions Configuration Vces V Ic dc (A) Dynex Part No. FZ1200R33KF2 Module Part No. EUPEC 140x190 SINGLE 3300 1200 DIM1200ESM33 FZ1600R12KF4 EUPEC 140x130


    Original
    DS5468 DS5468-2 FZ1200R33KF2 140x190 DIM1200ESM33 FZ1600R12KF4 140x130 DIM1600FSM12 FF400R12KF4 IGBT cross reference semikron eupec IGBT cross reference semikron 2MBI 200NB-120 IGBT Eupec 150Ne120 MG200J2YS50 mitsubishi MG100Q2YS51 MG400Q1US41 igbt mitsubishi FZ800R16KF4 MG200Q2YS40 PDF

    PEF 24628

    Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819
    Text: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by


    Original
    B192-H6780-G10-X-7600 SP000012954 SP000013610 SP000017969 SP000014627 SP000018085 SP000018086 PEF 24628 PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819 PDF

    Untitled

    Abstract: No abstract text available
    Text: 400N06N G OptiMOS Power-Transistor Product Summary Features • For fast switching converters and sync. rectification • N-channel enhancement - normal level V DS 60 V R DS on ,max 40 mΩ ID 27 A • 175 °C operating temperature • Avalanche rated


    Original
    IPD400N06N PG-TO252-3 400N06N PG-TO252-3: PDF

    400N-060

    Abstract: 400n06 L 26400 IC
    Text: FU JI 2-Pack IGBT 600 V 400 A 2MBI 400N-060 [lILMëüMlE IGBT MODULE N series Outline Drawing • Features • • • • • • Square RBSOA Low Saturation Voltage Less Total Power Dissipation Improved FWD Characteristic M inimized Internal Stray Inductance


    OCR Scan
    400N-060 AMP110 D-60528 400N-060 400n06 L 26400 IC PDF