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    400V 20 AMP MOSFET Search Results

    400V 20 AMP MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    400V 20 AMP MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    70413080

    Abstract: 70473180 SAC-187 Motorola 70483180 70483100 70484200 70487478 70484140 SJ-6357 70483180
    Text: SEMI-CONDUCTOR/TRANSISTOR CROSS-REFERENCE LIST Peavey Electronics Corporation ORIGINAL IN-HOUSE NUMBER ALTERNATE IN-HOUSE NUMBER FIELD REPLACEMENT NUMBER ORDER NUMBER NOTES TO-92 TRANSISTORS 2N3391 A SPS-953(A, B) MPS-8097, 2N6520 MPS-A18, 2N6539, SK-3919


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    PDF 2N3391 SPS-953 MPS-8097, 2N6520 MPS-A18, 2N6539, SK-3919 2N4249 SPS-690, PN-2907A 70413080 70473180 SAC-187 Motorola 70483180 70483100 70484200 70487478 70484140 SJ-6357 70483180

    MYXMN0600-20DA0

    Abstract: silicon carbide smd code diode 20a
    Text: Silicon Carbide Power MOSFET 600 Volt 20 Amp SMD Hermetic MYXMN0600-20DA0 Product Overview Features y r a in Benefits • High speed switching with low capacitance • High voltage 600V isolation in a small package outline • High blocking voltage with low RDS on


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    PDF MYXMN0600-20DA0 210OC MYXMN0600-20DA0 silicon carbide smd code diode 20a

    OM6230SS

    Abstract: OM6227SS OM6228SS OM6231SS OM6232SS OM6233SS mosfet 1000v
    Text: OM6227SS OM6230SS OM6232SS OM6228SS OM6231SS OM6233SS DUAL HIGH CURRENT POWER MOSFETS IN HERMETIC ISOLATED SIP PACKAGE 400V, 500V, 1000V, Up To 24 Amp N-Channel, Dual Size 6 High Energy MOSFETs FEATURES • • • • • • • Dual Uncommitted MOSFETs


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    PDF OM6227SS OM6230SS OM6232SS OM6228SS OM6231SS OM6233SS MIL-S-19500, OM6232SS OM6233SS mosfet 1000v

    400v 20 amp mosfet

    Abstract: QJS0512001 "MOSFET Module" MOSFET 20V 120A STY60NM50 50 Amp Mosfet mosfet amp mosfet module
    Text: QJS0512001 Single MOSFET Module 120 Amp/500 Volts Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Description: Powerex Single MOSFET Module is designed specially for customer applications. The module is isolated for easy mounting with other components


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    PDF QJS0512001 Amp/500 STY60NM50 400v 20 amp mosfet QJS0512001 "MOSFET Module" MOSFET 20V 120A 50 Amp Mosfet mosfet amp mosfet module

    IXAN0068

    Abstract: IXTK46N50L Abdus Sattar, Vladimir Tsukanov, "Power MOSFETs 1000V 2A BJT 1200W MOSFET power IXTH24n50l mosfet modern applications 400V linear regulator IXTN62N50L IXTH12N100L
    Text: Linear Power MOSFETS Basic and Applications Abdus Sattar, Vladimir Tsukanov, IXYS Corporation IXAN0068 Applications like electronic loads, linear regulators or Class A amplifiers operate in the linear region of the Power MOSFET, which requires high power dissipation capability


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    PDF IXAN0068 6710405B2, IXAN0068 IXTK46N50L Abdus Sattar, Vladimir Tsukanov, "Power MOSFETs 1000V 2A BJT 1200W MOSFET power IXTH24n50l mosfet modern applications 400V linear regulator IXTN62N50L IXTH12N100L

    400v 20 amp mosfet

    Abstract: power mosfet 100v 400v 10 amp n-channel mosfet
    Text: OM6038SM OM6039SM OM6040SM OM6041SM POWER MOSFET IN HERMETIC ISOLATED SURFACE MOUNT PACKAGE 100V Thru 500V, Up To 10 Amp, N-Channel Power MOSFETs In A Hermetic Surface Mount Package FEATURES • • • • • Isolated Hermetic Metal Package Fast Switching, Low Drive Current


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    PDF OM6038SM OM6039SM OM6040SM OM6041SM MIL-S-19500, OM6039SM OM6041SM 400v 20 amp mosfet power mosfet 100v 400v 10 amp n-channel mosfet

    AN-994

    Abstract: IRF830A
    Text: PD- 95139 SMPS MOSFET IRF830AS/LPbF HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High Speed Power Switching l Lead-Free l Benefits Low Gate Charge Qg Results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic


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    PDF IRF830AS/LPbF O-262 IRF830A AN-994. AN-994

    Untitled

    Abstract: No abstract text available
    Text: PD- 95139 SMPS MOSFET IRF830AS/LPbF HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High Speed Power Switching l Lead-Free l Benefits Low Gate Charge Qg Results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic


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    PDF IRF830AS/LPbF O-262 08-Mar-07

    AN-994

    Abstract: IRF830A International Rectifier IRF830A
    Text: PD- 95139 SMPS MOSFET IRF830AS/LPbF HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High Speed Power Switching l Lead-Free l Benefits Low Gate Charge Qg Results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic


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    PDF IRF830AS/LPbF O-262 12-Mar-07 AN-994 IRF830A International Rectifier IRF830A

    HV MOSFET

    Abstract: 400v 20 amp mosfet 2N7002 SCP-4926
    Text: SENSITRON SEMICONDUCTOR SCP-4926 TECHNICAL DATA DATASHEET 1138, REV. D HV MOSFET Power Module Data Sheet DESCRIPTION: 3000 VOLT, 1.0 AMP, INDUSTRIAL MOSFET POWER MODULE AT Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL CONDITION


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    PDF SCP-4926 2N7002 HV MOSFET 400v 20 amp mosfet SCP-4926

    irfcg20

    Abstract: HV MOSFET
    Text: SENSITRON SEMICONDUCTOR SCP-4926 TECHNICAL DATA DATASHEET 1138, REV. C HV MOSFET Power Module Data Sheet DESCRIPTION: 3000 VOLT, 1.0 AMP, INDUSTRIAL MOSFET POWER MODULE. AT Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL CONDITION


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    PDF SCP-4926 BYV26E IRFCG20 HV MOSFET

    IRFCG20

    Abstract: MOSFET 50 amp 1000 volt
    Text: SENSITRON SEMICONDUCTOR SCP-4926 TECHNICAL DATA DATASHEET 1138, REV. C HV MOSFET Power Module Data Sheet DESCRIPTION: 3000 VOLT, 1.0 AMP, INDUSTRIAL MOSFET POWER MODULE. AT Tj=25 C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PARAMETER POWER MOSFETS Q1,…,6


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    PDF SCP-4926 Isol1138, BYV26E IRFCG20 MOSFET 50 amp 1000 volt

    NTE7232

    Abstract: NTE2682 NTE2684 NTE7239 pdf/ES-F8DB-14A464-A
    Text: NTE SEMICONDUCTORS ADDED SINCE MAY 2013 NTE PART NO. DESCRIPTION Datasheet Link NTE573-1 RECTIFIERS Schottky Barrier Rectifier, 100V, 5 Amp, DO‐201AD Case NTE573‐2 Schottky Barrier Rectifier, 200V, 5 Amp, DO‐201AD Case


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    PDF NTE573â 201ADÂ com/specs/500to599/pdf/nte573â NTE639 214AAÂ NTE7232 NTE2682 NTE2684 NTE7239 pdf/ES-F8DB-14A464-A

    ARF1500

    Abstract: AMPLIFIER 1500w MAX3920 "27 mhz" amp 700B
    Text: S D S S D S ARF1500 D ARF1500 BeO RF POWER MOSFET 1525-xx G S N - CHANNEL ENHANCEMENT MODE S G S S G S 125V 750W 40MHz The ARF1500 is an RF power transistor designed for very high power scientific, commercial, medical and industrial RF power generator and amplifier applications up to 40 MHz.


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    PDF ARF1500 1525-xx 40MHz ARF1500 50-450pF AMPLIFIER 1500w MAX3920 "27 mhz" amp 700B

    sic marking e6

    Abstract: sic marking e7
    Text: SENSITRON SEMICONDUCTOR SPM1002 Technical Data DATASHEET 5278, Rev. - THREE-PHASE IGBT BRIDGE with SiC DIODES, BRAKE MOSFET and INTEGRATED BRAKE RESISTOR DESCRIPTION: • 600 VOLT, 30 AMP, THREE PHASE IGBT BRIDGE  FAST SWITCHING 3RD GENERATION IGBT 


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    PDF SPM1002 -700C 2000C 58iconductor. sic marking e6 sic marking e7

    Untitled

    Abstract: No abstract text available
    Text: OM6227SS OM6230SS OM6232SS OM6228SS OM6231SS OM6233SS DUAL HIGH CURRENT POWER MOSFETS IN HERMETIC ISOLATED SIP PACKAGE 400V, 500V, 1000V, Up To 24 Amp N-Channel, Dual Size 6 High Energy MOSFETs FEATURES • • • • • • • Dual Uncommitted MOSFETs


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    PDF OM6227SS OM6230SS OM6232SS OM6228SS OM6231SS OM6233SS MIL-S-19500, b7fiTD73

    Untitled

    Abstract: No abstract text available
    Text: OM6025SA OM6Q26SA POWER MOSFETS IN HERMETIC ISOLATED JEDEC TO-254AA SIZE 6 DIE 400V, 500V, N-Channel, Up To 24 Amp Size 6 MOSFETs, High Energy Capability FEATURES • Isolated Hermetic Metal Package • Size 6 Die, High Energy • Fast Switching, Low Drive Current


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    PDF OM6025SA OM6Q26SA O-254AA MIL-S-19500, OM6Q25SA OM6026SA OM6Q25SC OM6026SC

    m430p

    Abstract: pt 4115 EQUIVALENT m430u
    Text: so HARRIS S E M I C O N D U C T O R FRM430D, FRM430R, FRM430H 3A, 500V, 2.50 Ohm, Rad Hard, N-Channe Power MOSFETs June 1998 Features Package • 3A, 500V, RDS(on = 2.50Q TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts Gamma


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    PDF FRM430D, FRM430R, FRM430H O-204AA 100KRAD 300KRAD 1000KRAD 3000KRAD M430U1S M430PH0 m430p pt 4115 EQUIVALENT m430u

    Untitled

    Abstract: No abstract text available
    Text: OM6Û25SC OM6027SC OM6031SC OM6026SC OM6028SC OM6032SC POWER MOSFETS IN HERMETIC ISOLATED JEDEC TO-258AA SIZE 6 DIE 400V Thru 1000V, Up To 26 Amp N-Channel, Size 6 MOSFETs, High Energy Capability FEATURES • • • • • • Isolated Hermetic Metal Package


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    PDF OM6027SC OM6031SC OM6026SC OM6028SC OM6032SC O-258AA MIL-S-19500,

    OM6025SC

    Abstract: OM6031SC ci 3900
    Text: OM6025SC OM6Û27SC OM6031SC OM6026SC OM6028SC OM6032SC POWER MOSFETS IN HERMETIC ISOLATED JEDEC TO-258AA SIZE 6 DIE 400V Thru 1000V, Up To 26 Amp N-Channel, Size 6 MOSFETs, High Energy Capability FEATURES • • • • • • Isolated Hermetic Metal Package


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    PDF OM6025SC OM6031SC OM6Q26SC OM6Q28SC OM6Q32SC O-258AA MIL-S-19500, aT073 00D13ES ci 3900

    IRF9210

    Abstract: darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1
    Text: PRODUCT INDEX FUNCTIONAL SELECTION GUIDE BIPOLAR TRANSISTOR DESCRIPTION MRTNO. 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 KSP13 KSP2222A KSP27 KSP2907A KSP42 KSP44 KSP56 KSP92 KST10-TF KST2222A-TF KST2484-TF KST2907-TF KST3904-TF KST3906-TF


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    PDF 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 IRF9210 darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1

    Untitled

    Abstract: No abstract text available
    Text: OM6025SA OM6026SA POWER MOSFETS IN HERMETIC ISOLATED JEDEC TO-254AA SIZE 6 DIE 400V. 500V. N - C h a n n e l . Up To 24 A m p Size 6 M O S F E T s . H i g h E n e r g y C a p a b i l i t y FEATURES • • • • • • Isolated Hermetic Metal Package Size 6 Die, High Energy


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    PDF OM6025SA OM6026SA O-254AA MIL-S-19500, OM6Q25SA QM6026SA OM6Q25SC OM6Q26SC

    Untitled

    Abstract: No abstract text available
    Text: OM6025SC OM6027SC OM6031SC OM6026SC OM6Û28SC OM6032SC POWER MOSFETS IN HERMETIC ISOLATED JEDEC TO-258AA SIZE 6 DIE 400V Thru 1000V. Up To 26 A m p N-Channel. Size 6 MOSFETs. High En erg y Ca pa bility FEATURES • • • • • • Isolated Hermetic Metal Package


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    PDF OM6025SC OM6027SC OM6031SC OM6026SC OM6032SC O-258AA MIL-S-19500,

    20 amp MOSFET transistor

    Abstract: N and P MOSFET
    Text: OM8OOISC OM8003SC OM8002SC OM8004SC POWER MOSFET WITH GATE DRIVE CIRCUIT IN 6-PIN HERMETIC PACKAGE omnirel corp 43E D • bTô^QTB QGQQSTb 7 MOMNI 100V Thru 500V, Up To 35 Amp, N-Channel MOSFET With Low Power Gate Drive Circuitry FEATURES • Isolated Hermetic Package


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    PDF OM803 OM8001 OM8002 OM8003 OM8004 OM8004 20 amp MOSFET transistor N and P MOSFET