400V 5A NPN 100W Search Results

400V 5A NPN 100W Result Highlights (5)

Part	Manufacturer	Description
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini
TPCP8515	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8
TTC021	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini
2SC5198	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=140 V / IC=10 A / hFE=55~160 / VCE(sat)=2.0 V / TO-3P(N)

400V 5A NPN 100W Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Diode 400V 5A Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM	Original	2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 Diode 400V 5A lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN	PDF
BUS11-JQR-B Abstract: 400V 5A NPN 100W BUV19 PNP 8A 400V TO-3 Text: Search Results Part number search for devices beginning "BUS12" Datasheets are downloaded as Acrobat PDF files. Semelab Home Bipolar Products PRODUCT Polarity Package VCEO IC cont HFE(min) HFE(max) @ VCE/IC FT PD BUS12 NPN TO3 400V 8A 15 - 5/1 - 125W BUS12A	Original	BUS12" BUS12 BUS12A BUS12ACECC BUS12A-JQR-B BUS12CECC BUS12-JQR-B BUS11" BUW49" BUW49 BUS11-JQR-B 400V 5A NPN 100W BUV19 PNP 8A 400V TO-3	PDF
triacs bt 804 600v Abstract: UR720 1N4465 AO110 diode 1N539 2N3750 Unitrode discrete databook 2N6138 CM104 unitrode 679 BRIDGE rectifier Text: UNITRODE SEMICONDUCTOR DATABOOK 1976 C opyright 1976 U nitrode C orporation, W atertown, MA. A ll rights reserved. INTRODUCTION From its inception 16 years ago, Unitrode has acquired a reputa tion for maintaining an unusually high level of quality, perfor	OCR Scan	Comp27-1296 triacs bt 804 600v UR720 1N4465 AO110 diode 1N539 2N3750 Unitrode discrete databook 2N6138 CM104 unitrode 679 BRIDGE rectifier	PDF
BUF405 Abstract: BUF405A 400V 5A NPN 100W Text: BUF405 BUF405A SGS-THOMSON FASTSWiTCH EASY-TO-DRIVE ETD NPN TRANSISTORS PR ELIM IN A R Y DATA > HIGH SWITCHING SPEED NPN POWER TRANSISTORS * EASY TO DRIVE • HIGH VOLTAGE FOR OFF-LINE APPLICA TIONS ■ 100KHZ SWITCHING SPEED ■ LOW COST DRIVE CIRCUITS	OCR Scan	BUF405 BUF405A 100KHZ 100KHz BUF405/405A --SC-B355 400V 5A NPN 100W	PDF
BZX85C12V Abstract: TOSHIBA 2N3055 bta41-600b application BTA41-600B firing circuit TAB 429 H toshiba BZX85C20V SCR tyn612 pin configuration picaxe TYN612 specification 2SA1085E Text: SEMICONDUCTORS DISCRETE DEVICES Cathode Anode DO-15 DO-201AD 6.8 x 3.5mm 9.5 x 5.3mm Anode Cathode TO-220AC Fast recovery diodes page 427 Schottky power diodes page 428 Isolated tab triacs page 430 Anode 1 Gate Anode 2 Bridge rectifiers Current regulating diodes	Original	DO-15 DO-201AD O-220AC T0202-3 STGP3NB60HD* STGP7NB60HD* STGP3NB60HD STGP7NB60HD BZX85C12V TOSHIBA 2N3055 bta41-600b application BTA41-600B firing circuit TAB 429 H toshiba BZX85C20V SCR tyn612 pin configuration picaxe TYN612 specification 2SA1085E	PDF
150w darlington transistor to3 package Abstract: NTE97 NPN Transistor 50A 400V NPN DARLINGTON 10A 500V transistor HV Text: NTE97 Silicon NPN Transistor HV Darlington Power Amp, Switch Description: The NTE97 is a silicon NPN Darlington transistor in a TO3 type package designed for high voltage, high–speed, power switching in inductive circuits where fall–time is critical. They are particularly	Original	NTE97 NTE97 150w darlington transistor to3 package NPN Transistor 50A 400V NPN DARLINGTON 10A 500V transistor HV	PDF
NPN Transistor 1A 400V Abstract: 405a BUF405 BUF405A 02JJ Text: 7^5^537 00555^5 b • T~-3>3~1^ BUF405 BUF405A SGS-THOMSON ¡[L iC T l iD i S Q S-THOMSON 30 E ]> FASTSWITCH EASY-TO-DRIVE ETD NPN TRANSISTORS P R EL IM IN A R Y DATA ■ HIGH SWITCHING SPEED NPN POWER TRANSISTORS ■ EASY TO DRIVE ■ HIGH VOLTAGE FOR OFF-LINE APPLICA	OCR Scan	-33-l? BUF405 BUF405A 100KHZ 100KHz BUF405/405A NPN Transistor 1A 400V 405a BUF405 BUF405A 02JJ	PDF
Untitled Abstract: No abstract text available Text: *57 BUF405 BUF405A SCS-THOMSON i u FASTSWITCH EASY-TO-DRIVE ETD NPN TRANSISTORS P R ELIM IN A R Y DATA • HIGH SWITCHING SPEED NPN POWER TRANSISTORS ■ EASY TO DRIVE ■ HIGH VOLTAGE FOR OFF-LINE APPLICA TIONS ■ 100KHZ SWITCHING SPEED ■ LOW COST DRIVE CIRCUITS	OCR Scan	BUF405 BUF405A 100KHZ 100KHz F105A	PDF
NTE379 Abstract: NTE379 equivalent Text: NTE379 Silicon NPN Transistor Power Amp, High Voltage, Switch Description: The NTE379 is a silicon NPN transistor in a TO220 type package designed for high–voltage, high– speed power switching inductive circuits where fall time is critical. This device is particularly suited	Original	NTE379 NTE379 NTE379 equivalent	PDF
pnp 400v 10a Abstract: No abstract text available Text: Search Results Part number search for devices beginning "2N697." Top of Page Semelab Home If you are unable to find a suitable part, please contact us. [26-Mar-2002 12:28:58 PM] Datasheets are downloaded	Original	2N697. 2N6500" 2N6500 2N6500-JQR-B 60MHz 5/10m pnp 400v 10a	PDF
Untitled Abstract: No abstract text available Text: , Una, TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TIP55A, TIP56A, TIP57A, TIP58A N-P-N SILICON POWEBJRANSISTORS Min V(BR)CEO of25° v to 400 V 50 W at 100° C Case Temperature 10 A Peak Collector Current	Original	TIP55A, TIP56A, TIP57A, TIP58A O-218AA	PDF
transistor d333 Abstract: TRANSISTOR BC 384 mercury wetted relay, double contact DT5336 npn darlington 6A 400V NPN Transistor 10A 400V to3 power darlington 100W Transistor bc 879 high voltage darlington Darlington 300v Text: LUCAS STABILITY ELEK 011. UU164 100W A H LTD öl D n D • — SL.07013 -T - 3 3 - 2 ,7 HIGH V O LTA G E DARLINGTON TR A N SIST O R S 300-500V CO LLEC TO R -EM ITTER V O LTA G E □ □ □ □ im DT4335 DT4336 DT5335 DT5336 ■ LUCB The DT4335/6 and DT5335/6 are NPN double epitaxial devices conforming to	OCR Scan	uu164 G7G13 00-500V T4335 DT4336 DT5335 DT5336 DT4335/6 DT5335/6 O-3/TO-204. transistor d333 TRANSISTOR BC 384 mercury wetted relay, double contact npn darlington 6A 400V NPN Transistor 10A 400V to3 power darlington 100W Transistor bc 879 high voltage darlington Darlington 300v	PDF
L-120L Abstract: UMT1007 UMT1006 5A5A Text: UMT1006 UMT1007 POWER TRANSISTORS 5A, 500V, Fast Switching, High Es/b Silicon NPN Mesa DESCRIPTION These high voltage glass passivated power transistors combine fast switching, low saturation voltage and rugged Es/b capability. They are designed for use in off-line power sup	OCR Scan	UMT1006 UMT1007 540/iJ S50C1 L-120L UMT1007 5A5A	PDF
NPN Transistor 1500V Abstract: transistor tl 187 187 npn transistor NPN Transistor 1500V 20a NTE238 Text: NTE238 Silicon NPN Transistor Color TV, Horizontal Output Description: The NTE238 is a silicon NPN horizontal deflection transistor in a TO3 type package designed for use in deflection circuits. Features: D VCEX = 1500V D Safe Operating Area @ 50µs = 20A, 400V	Original	NTE238 NTE238 Cont00V, NPN Transistor 1500V transistor tl 187 187 npn transistor NPN Transistor 1500V 20a	PDF

NTE2670 Abstract: NTE2671 Text: NTE2670 NPN & NTE2671 (PNP) Silicon Complementary Transistors Silicon Perforated Emitter Technology Audio Power Output Description: The NTE2670 and NTE2671 utilize Perforated Emitter technology specifically designed for high power audio output, disk head positioners and linear applications.	Original	NTE2670 NTE2671 NTE2670 NTE2671 800mA 100WRMS	PDF
NPN pnp MATCHED PAIRS Abstract: NTE2670 NTE2671 NPN MATCHED PAIRS Text: NTE2670 NPN & NTE2671 (PNP) Silicon Complementary Transistors Silicon Perforated Emitter Technology Audio Power Output TO3PBL Type Package Description: The NTE2670 and NTE2671 are silicon complementary transistors in a TO3PBL type package that utilize Perforated Emitter technology specifically designed for high power audio output, disk head positioners and linear applications.	Original	NTE2670 NTE2671 NTE2670 NTE2671 800mA 100WRMS NPN pnp MATCHED PAIRS NPN MATCHED PAIRS	PDF
BUX80 Abstract: npn 10a 800v 1N5802 npn transistors 400V low power Text: BUX80 POWER TRANSISTORS 10A, 800V, Fast Switching, Silicon NPN Mesa FEATURES DESCRIPTION • • • • These high voltage triple diffused glass passivated power transistors combine fast switching, low saturation voltage and rugged E s/b capability. They are designed for use in	OCR Scan	BUX80 500nS 250iiS; 50//S; BUX80 npn 10a 800v 1N5802 npn transistors 400V low power	PDF
Electronic ballast 100W Abstract: npn 10a 800v NPN Transistor 10A 400V BUL74B 5v1130 Text: SEME BUL74B LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 10.2 4.5 6.3 1.3 3.6 Dia. 18.0 15.1 Designed for use in electronic ballast applications • • • • 1 2 3 14.0 1.3 0.85	Original	BUL74B O-220 Electronic ballast 100W npn 10a 800v NPN Transistor 10A 400V BUL74B 5v1130	PDF
Untitled Abstract: No abstract text available Text: SEME BUL74B LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 10.2 4.5 6.3 1.3 3.6 Dia. 18.0 15.1 Designed for use in electronic ballast applications • • • • 1 2 3 14.0 1.3 0.85	Original	BUL74B O-220	PDF
transistor 13009 Abstract: transistor E 13009 13009 TRANSISTOR e 13009 f transistor E 13009 2 13009 KSE13009HE13009 d423a e 13009 l HE13009 Text: NPN 汕头华汕电子器件有限公司 SILICON TRANSISTOR 13009 晶体管芯片说明书 █ 芯片简介 █ 管芯示意图芯片尺寸：4 英寸（100mm）芯片代码：D423AG-00 芯片厚度：240±20µm 管芯尺寸：4230x4230µm 2 焊位尺寸：B 极 1200×420µm 2，E 极 1140×540µm 2	Original	100mm D423AG-00 KSE13009HE13009 O-220 10mAIB 12AIB 10VIC 125VIC transistor 13009 transistor E 13009 13009 TRANSISTOR e 13009 f transistor E 13009 2 13009 KSE13009HE13009 d423a e 13009 l HE13009	PDF
KSH13009 Abstract: 13009a transistor 13009a MA1040 Text: NPN 汕头华汕电子器件有限公司 SILICON TRANSISTOR 13009A 晶体管芯片 █ 芯片简介 █ 管芯示意图芯片尺寸：4 英寸（100mm）芯片代码：D400AG-00 芯片厚度：240±20µm 管芯尺寸：4000x4000µm 2 焊位尺寸：B 极 783×1100µm 2，E 极 754×1276µm 2	Original	3009A 100mm D400AG-00 KSH13009 O-220 10mAIB 12AIB 10VIC KSH13009 13009a transistor 13009a MA1040	PDF
rca 40410 Abstract: rca 40362 transistor 40410 RCA transistor 40410 RCA transistor 40406 40410 RCA 40319 40362 RCA 2N5295 2N5296 RCA Text: HIGH-VOLTAGE N-P-N & P-N-P POWER T Y PE S 1C to 30 A . . •c pm k - 12 A lc = 10A Py =7 5 •100W Switching Linear 130 x 130 130 x 130 1 3 0 x 130 BU106 2N5840 [N-P-N] 2N 52 40 [N-P-N] BU106 2N5838 Va o sus =l40V VCER(sus) =275 V hFE = 20min. hFE.:8 ;" 0) /	OCR Scan	lc-30A 130x130 180x180 210x210 bu106 2n5840 2n5240 2N6510 2N6308 2n5805 rca 40410 rca 40362 transistor 40410 RCA transistor 40410 RCA transistor 40406 40410 RCA 40319 40362 RCA 2N5295 2N5296 RCA	PDF
NTE2301 Abstract: No abstract text available Text: NTE2301 Silicon NPN Transistor High Voltage Horizontal Output Description: The NTE2301 is a silicon NPN power transistor in a TO218 type package designed for use in large screen deflection circuits. Features: D Collector–Emitter Voltage: VCEX = 1500V D Glassivated Base–Collector Junction	Original	NTE2301 NTE2301	PDF
NTE394 Abstract: No abstract text available Text: NTE394 Silicon NPN Transistor Power Amp, High Voltage Switch Description: The NTE394 is a silicon multiepitaxial mesa NPN transistor in a TO218 type package designed for use in high voltage, fast switching applications. Absolute Maximum Ratings: Collector–Emitter Voltage VBE = 0 , VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V	Original	NTE394 NTE394 100mA,	PDF

400V 5A NPN 100W Search Results

400V 5A NPN 100W Result Highlights (5)

400V 5A NPN 100W Datasheets Context Search

Diode 400V 5A

BUS11-JQR-B

triacs bt 804 600v

BUF405

BZX85C12V

150w darlington transistor to3 package

NPN Transistor 1A 400V

Untitled

NTE379

pnp 400v 10a

Untitled

transistor d333

L-120L

NPN Transistor 1500V

NTE2670

NPN pnp MATCHED PAIRS

BUX80

Electronic ballast 100W

Untitled

transistor 13009

KSH13009

rca 40410

NTE2301

NTE394