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    400V P - CHANNEL MOS Search Results

    400V P - CHANNEL MOS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    400V P - CHANNEL MOS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FQPF2P40

    Abstract: No abstract text available
    Text: QFET TM FQPF2P40 400V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize


    Original     		PDF FQPF2P40 -400V, FQPF2P40

    p-channel 200V

    Abstract: FQP2P40
    Text: QFET TM FQP2P40 400V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize


    Original     		PDF FQP2P40 -400V, p-channel 200V FQP2P40

    FQP2P40

    Abstract: No abstract text available
    Text: QFET TM FQP2P40 400V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize


    Original     		PDF FQP2P40 -400V, FQP2P40

    FQD2P40

    Abstract: No abstract text available
    Text: QFET TM FQD2P40 / FQU2P40 400V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize


    Original     		PDF FQD2P40 FQU2P40 -400V, FQU2P40TU O-251 FQU2P40

    Untitled

    Abstract: No abstract text available
    Text: QFET FQD2P40 / FQU2P40 400V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize


    Original     		PDF FQD2P40 FQU2P40 -400V, FQU2P40

    Untitled

    Abstract: No abstract text available
    Text: QFET TM FQB2P40 / FQI2P40 400V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize


    Original     		PDF FQB2P40 FQI2P40 -400V, FQI2P40TU O-262

    FQB2P40

    Abstract: FQI2P40
    Text: QFET TM FQB2P40 / FQI2P40 400V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize


    Original     		PDF FQB2P40 FQI2P40 -400V, FQI2P40

    FQD2P40

    Abstract: FQU2P40
    Text: QFET FQD2P40 / FQU2P40 400V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize


    Original     		PDF FQD2P40 FQU2P40 -400V, FQU2P40

    Untitled

    Abstract: No abstract text available
    Text: QFET TM FQD2P40 / FQU2P40 400V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize


    Original     		PDF FQD2P40 FQU2P40 -400V, FQD2P40TF O-252 FQD2P40TM

    FQD2P40

    Abstract: FQU2P40
    Text: QFET TM FQD2P40 / FQU2P40 400V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize


    Original     		PDF FQD2P40 FQU2P40 -400V, FQU2P40

    P-Channel mosfet 400v to220

    Abstract: No abstract text available
    Text: FQP2P40 June 2000 QFET TM FQP2P40 400V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQP2P40 -400V, O-220 P-Channel mosfet 400v to220

    FQG4904

    Abstract: 40v N- and P-Channel dip
    Text: TM FQG4904 400V Dual N & P-Channel MOSFET General Description Features These dual N and P-channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQG4904 -400V, FQG4904 40v N- and P-Channel dip

    Untitled

    Abstract: No abstract text available
    Text: FQP4P40 August 2000 QFET FQP4P40 TM 400V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQP4P40 -400V,

    40v N- and P-Channel dip-8

    Abstract: No abstract text available
    Text: TM FQG4904 400V Dual N & P-Channel MOSFET General Description Features These dual N and P-channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQG4904 -400V, FQG4904TU 40v N- and P-Channel dip-8

    400v p-channel mosfet

    Abstract: FQP4P40 P-Channel mosfet 400v to220
    Text: FQP4P40 August 2000 QFET TM FQP4P40 400V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQP4P40 -400V, 400v p-channel mosfet FQP4P40 P-Channel mosfet 400v to220

    FQPF4P40

    Abstract: No abstract text available
    Text: FQPF4P40 August 2000 QFET TM FQPF4P40 400V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQPF4P40 -400V, FQPF4P40

    FQD4P40

    Abstract: FQU4P40
    Text: FQD4P40 / FQU4P40 August 2000 QFET TM FQD4P40 / FQU4P40 400V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQD4P40 FQU4P40 -400V, FQU4P40

    FQB4P40

    Abstract: FQI4P40
    Text: FQB4P40 / FQI4P40 August 2000 QFET TM FQB4P40 / FQI4P40 400V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQB4P40 FQI4P40 -400V, FQI4P40

    Untitled

    Abstract: No abstract text available
    Text: FQB2P40 / FQI2P40 June 2000 QFET TM FQB2P40 / FQI2P40 400V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQB2P40 FQI2P40 -400V,

    FQD4P40

    Abstract: FQU4P40
    Text: FQD4P40 / FQU4P40 January 2009 QFET FQD4P40 / FQU4P40 400V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQD4P40 FQU4P40 -400V, FQU4P40

    Untitled

    Abstract: No abstract text available
    Text: FQD4P40 / FQU4P40 January 2009 QFET FQD4P40 / FQU4P40 400V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQD4P40 FQU4P40 -400V,

    400v p-channel mosfet

    Abstract: No abstract text available
    Text: FQB4P40 / FQI4P40 August 2000 QFET TM FQB4P40 / FQI4P40 400V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQB4P40 FQI4P40 -400V, FQB4P40TM O-263 400v p-channel mosfet

    Untitled

    Abstract: No abstract text available
    Text: FQB4P40 / FQI4P40 August 2000 QFET TM FQB4P40 / FQI4P40 400V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQB4P40 FQI4P40 -400V, FQI4P40 FQI4P40TU O-262

    Untitled

    Abstract: No abstract text available
    Text: P *3 3 S IRFR320, IRFR321, IRFR322, IRFU320, IRFU321, IRFU322 2.6A and 3.1 A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs juiy 1998 Features Description • 2.6A and 3.1 A, 350V and 400V • High Input Impedance These are N-Channel enhancement mode silicon gate


    OCR Scan     		PDF IRFR320, IRFR321, IRFR322, IRFU320, IRFU321, IRFU322 RFR322,