C1995
Abstract: DM74S473 DM74S473J DM74S473N DM74S473V J20A 512 ttl prom 9715
Text: DM74S473 512 x 8 4096-Bit TTL PROM General Description Features This Schottky memory is organized in the popular 512 words by 8 bits configuration A memory enable input is provided to control the output states When the device is enabled the outputs represent the contents of the selected
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DM74S473
4096-Bit
C1995
DM74S473
DM74S473J
DM74S473N
DM74S473V
J20A
512 ttl prom
9715
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Untitled
Abstract: No abstract text available
Text: CCD481 4096 x 4096 Element Full Frame Image Sensor Fairchild Im aging Sensors FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ 4096 x 4096 Photosite Array 7.5nm x 7.Sfim Pixel 30.72mm x 30.72mm Image Area 100% Fill Factor Multi-Pinned Phase MPP Option Readout Noise Less Than 7 Electrons
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CCD481
CCD481
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VT2332
Abstract: "vlsi technology" 2532 rom 2732 memory chip VT2333 "VLSI Technology Inc."
Text: VT2332/33 PRELIMINARY 4096 x 8 STATIC READ ONLY MEMORY FEATURES DESCRIPTION • 4096 x 8-bit organization The VT2332/3 h ig h -p e rfo rm a n c e Read Only M em ory is o rg an ized 4096 words by e ig h t bits with access times o f less than 300 ns. This ROM is
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VT2332/33
VT2332
VT2333
VT2332/3
"vlsi technology"
2532 rom
2732 memory chip
"VLSI Technology Inc."
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VT233
Abstract: No abstract text available
Text: VT2332/33 p r e l im in a r y 4096 x 8 STATIC READ ONLY MEMORY FEATURES DESCRIPTION • 4096 x 8-bit o rganization The VT2332/3 h ig h -p e rfo rm a n c e R ead Only M em ory is o rg an ized 4096 words b y e ig h t bits with a ccess times o f less than 300 ns. This ROM is
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VT2332/33
VT2332/3
VT233
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MB7122
Abstract: MB7100 MB7122E LCC-20C-F02 MB712 MB7122E-W 1024-words eutec
Text: APR 2 1993 June 1990 Edition 3.0 FUJITSU DATA SHEET MB7122E-W/L-W PROGRAMMABLE SCHOTTKY 4096-BIT READ ONLY MEMORY SCHOTTKY 4096-BIT DEAP PROM 1024WORDS X 4BITS The Fujitsu MB7122-W is high speed Schottky TTL electrically field programmable read only memory organized as 1024words by 4bits. With three-state outputs on
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MB7122E-W/L-W
4096-BIT
1024WORDS
MB7122-W
MB7122,
MB7122
MB7100
MB7122E
LCC-20C-F02
MB712
MB7122E-W
1024-words
eutec
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MB7124
Abstract: LA 7123 MB7124E MB7123 7123L MB 7124
Text: FUJITSU PROGRAMMABLE SCHOTTKY 4096-BIT READ ONLY MEMORY MB MB MB MB 7123E/H 7124E/H/Y 7123L 7124L June 1987 E d itio n 3 .0 SCHOTTKY 4096-BIT DEAP PROM 512 WORDS X 8 BITS The Fujitsu MB 7123 and MB 7124 are high speed S ch o ttky T T L electrically fie ld programmable read only memories organized as 512 words by 8 bits.
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4096-BIT
7123E/H
7124E/H/Y
7123L
7124L
DIP-20P-M02)
MB7124
LA 7123
MB7124E
MB7123
MB 7124
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8 bit ttl mux
Abstract: 82HS321 82HS321A
Text: Philips Semiconductors Military Bipolar Memory Products Product specification 32K-bit TTL bipolar PROM 4096 x 8 82HS321A FEATURES APPLICATIONS DESCRIPTION • Address access time: • Prototyping/volume production The 82HS321 is field programmable, which
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32K-bit
82HS321A
82HS321
-250nA
500ns
711Gfl2b
711002b
8 bit ttl mux
82HS321A
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GDFP2-F24
Abstract: 82HS321 82HS321A
Text: Philips Semiconductors Military Bipolar Memory Products Product specification 32K-bit TTL bipolar PROM 4096 x 8 82HS321A FEATURES APPLICATIONS DESCRIPTION • Address access time: • Prototyping/volume production The 82HS321 is field programmable, which
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32K-bit
82HS321A
82HS321
-250nA
500ns
711Dfl2fa
711002b
GDFP2-F24
82HS321A
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signetics PROM
Abstract: 82HS321A 82HS321B Signetics MUX
Text: 82HS321A/82HS321B Signetics 32K-Bit TTL Bipolar PROM 4096 X 8 Military Bipolar Memory Products DESCRIPTION The 82HS321 is field programmable, which means that custom patterns are immediately available by following the Signetics Generic II fusing procedure. The
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82HS321A/82HS321B
32K-Bit
82HS321
signetics PROM
82HS321A
82HS321B
Signetics MUX
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AM27S28DC
Abstract: AM27S28DM AM27S29DC AM27S29DM PM9058 am27s28 AMD Bipolar PROM programming AM27S29 pro-log m900 Programmers AM27S29DC AMD
Text: Am27S28 • Am27S29 4096-Bit Generic Series Bipolar PROM DISTINCTIVE CHARACTERISTICS FUNCTIONAL DESCRIPTION • High Speed - 55ns max commercial range access time • Excellent pecformance over full MIL and commercial ranges • Highly reliable, ultra-fast programming Platinum-Silicide
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Am27S28
Am27S29
4096-Bit
AM27S28DC
AM27S28DM
AM27S29DC
AM27S29DM
PM9058
AMD Bipolar PROM programming
pro-log m900 Programmers
AM27S29DC AMD
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AM27S33DC
Abstract: AM27S33 AM27S33DM AM27S32DC AM27S32DM AMD socket s1
Text: Am27S32 • Am27S33 4096-Bit Generic Series Bipolar PROM DISTINCTIVE CHARACTERISTICS FUNCTIONAL DESCRIPTION • High Speed - 55ns max commercial range access time • Excellent performance over full MIL and commercial ranges • Highly reliable, ultra-fast programming Platinum-Silicide
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Am27S32
Am27S33
4096-Bit
AM27S33DC
AM27S33DM
AM27S32DC
AM27S32DM
AMD socket s1
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MCM68732
Abstract: 68732 MCM68A332
Text: MOTOROLA MCM68732 MCM68L732 /? tP 4096 x 8-BIT UV ERASABLE PROM The MCM68732/68L732 is a 32,768-bit Erasable and’ Electrically Reprogrammable PROM designed for system debug usage and similar applications requiring nonvolatile memory th a t could be reprogrammed
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MCM68732
MCM68L732
MCM68732/68L732
768-bit
MCM68732/68L732.
68732
MCM68A332
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S93C66
Abstract: XL93C66 S-93C66 10xxxxxx111
Text: MICROELECTRONICS XL93C66 Exc&BênctIn& Preliminary 4096-Bit Serial Electrically Erasable PROM with 2V Read Capability FEATURES PIN CONFIGURATIONS • State-of-the-Art Architecture — Nonvolatile data storage — Single supply - 5V operation — Full TTL compatible Inputs and outputs
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XL93C66
4096-Bit
S93C66
XL93C66
S-93C66
10xxxxxx111
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Untitled
Abstract: No abstract text available
Text: Am27S25/27S25A/27S25SA arf E l Advanced Micro Devices 4096-Bit 512x8 Bipolar Registered PROM with Preset and Clear Inputs DISTINCTIVE CHARACTERISTICS • • • • ’SA' version offers ultrafast AC performance {25 ns set up and 12 ns clock-to-output)
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Am27S25/27S25A/27S25SA
4096-Bit
512x8)
24-pin,
300-mil
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2048 bit 256x8 bipolar prom
Abstract: 82S115 512x8 PROM 82S114 512X8 signetics PROM
Text: s ig n o tic s 2048-BIT BIPOLAR ROM 256x8 PROM 4096-BIT BIPOLAR ROM (512x8 PROM) 825114 825115 DIGITAL 8000 SERIES TTL/MEMORY DESCRIPTION PIN CONFIGURATION The 82S114 and 82S115 are Schottky-clamped Read Only Memories, incorporating on-chip data output registers.
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2048-BIT
256x8
4096-BIT
512x8
82S114
82S115
2048 bit 256x8 bipolar prom
512x8 PROM
signetics PROM
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27S40
Abstract: Am27S40
Text: Am27S40/S41 Am 27S40/S41 4096 x 4 Bit Generic Series Bipolar IMOX PROM with ultra fast access time DISTINCTIVE CHARACTERISTICS Ultra fast access time " A " version (35ns max) — Fast access time Standard version (50ns max) — allow tremendous system speed improvements
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Am27S40/S41
27S40/S41
Am27S40A
Am27S41A
Am27S40
Am27S41
02122B
27S40
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Untitled
Abstract: No abstract text available
Text: Am27S65 4096-Bit 1 0 2 4 x 4 Bipolar Registered PROM with SSR Diagnostics Capability DISTINCTIVE CHARACTERISTICS • • • • On-chip diagnostic shift register for serial observability and controllability of the output register User-programmable Enable Pin for Asynchronous or
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Am27S65
4096-Bit
24-pin,
300-mil
BD005830
27S65A
27SS5
27S65
CD000541
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63S3281
Abstract: 53/63S3281 53S281
Text: Advanced Micro Devices 53/63S3281/A 53S3281B High Performance 4096 x 8 PROM TiW PROM Family FEATURES/BENEFITS APPLICATIONS • 35-ns maximum access time • Microprogram control store • 32768-blt memory • Microprocessor program store • Reliable tltanlum-tungsten fuses TIW with
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53/63S3281/A
53S3281B
35-ns
32768-blt
53/63S3281
53/63S3281/A
63S3281
53S281
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Am27C43
Abstract: No abstract text available
Text: El A d v a n ce Inform ation Am27C43 Advanced Micro Devices 32,768-Bit 4096 x 8 High-Performance CMOS PROM DISTINCTIVE CHARACTERISTICS • High-speed (35 ns)/ Low-power (90 mA) CMOS EPROM Technology 5-Volt +10% power supplies for both Commercial and Military
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Am27C43
768-Bit
300-mll
1967-001A
Am27C43-35
Am27C43-45
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AM27S25
Abstract: C3525
Text: Am27S25 4096-Bit 5 1 2 x 8 Bipolar Registered PROM With Preset and Clear Inputs > 3 ro DISTINCTIVE CHARACTERISTICS 'SA' version offers ultrafast AC performance (25 ns set up and 12 ns clock-to-output) On-chip edge-triggered registers — ideal for pipelined
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Am27S25
4096-Bit
24-pin,
300-mil
BD006130
Am27S25SA
Am27S25A
C3525
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Untitled
Abstract: No abstract text available
Text: SAN 1 0 '991 eXe L MICROELECTRONICS Preliminary XL93LC66-3 Exc*ä*nc9 In t? 4096-Bit Serial 3V to 5V Electrically Erasable PROM with 2V Read Capability FEATURES PIN CONFIGURATIONS • State-of-the-Art Architecture — Nonvolatile data storage — 3V to 5V operation
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XL93LC66-3
4096-Bit
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Untitled
Abstract: No abstract text available
Text: [AK6440H] ASAHI KASEI A K 6 4 4 OH Wide Vcc 2.5V ~ 5.5V 4096bit Serial Electrically Erasable PROM Features □ ADVANCED CMOS E2PROM TECHNOLOGY □ READ/WRITE NON-VOLATILE MEMORY - Wide Vcc (2.5V ~ 5.5V) operation - 4096 bits: 256 X 16 organization □ ONE CHIP MICROCOMPUTER INTERFACE
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AK6440H]
4096bit
AK6440H
0006-E-00
ifl3b35
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DM74S475N
Abstract: DM74S475V J24A V28A
Text: DM54S475/DM74S475 Egl National æA Semiconductor DM54/74S475 512 x 8 4096-Bit TTL PROM General Description Features This Schottky memory is organized in the popular 512 words by 8 bits configuration. Memory enable inputs are provided to control the output states. W hen the device is
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DM54/74S475
4096-Bit
DM74S475N
DM74S475V
J24A
V28A
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Untitled
Abstract: No abstract text available
Text: Am27S15 Am27S15 4096-Bit 512x8 Bipolar PROM with Output Data Latches DISTINCTIVE CHARACTERISTICS • • • • On-chip data latches Latched true and complemented output enables for easy word expansion Predetermined OFF outputs on power-up Fast access time — 60 ns commercial and 90 ns military
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Am27S15
4096-Bit
512x8)
512-words
MIL-STD-883,
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