Untitled
Abstract: No abstract text available
Text: EC2612 RoHS COMPLIANT 40GHz Super Low Noise pHEMT Pseudomorphic High Electron Mobility Transistor Description The EC2612 is based on a 0.15µm gate pseudomorphic high electron mobility transistor 0.15µm pHEMT technology. Gate width is 120µm and the 0.15µm
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EC2612
40GHz
EC2612
18GHz
40GHz
DSEC26120077
-17-Mar-00
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EC2612
Abstract: ec2612 pHEMT MAR 618 transistor
Text: EC2612 RoHS COMPLIANT 40GHz Super Low Noise PHEMT Pseudomorphic High Electron Mobility Transistor Description The EC2612 is based on a 0.15µm gate pseudomorphic high electron mobility transistor 0.15µm PHEMT technology. Gate width is 120µm and the 0.15µm
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EC2612
40GHz
EC2612
18GHz
40GHz
DSEC26120077
-17-Mar-00
ec2612 pHEMT
MAR 618 transistor
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ec2612 phemt
Abstract: pHEMT transistor 30GHz EC2612 MAR 618 transistor LS 9814
Text: EC2612 RoHS COMPLIANT 40GHz Super Low Noise pHEMT Pseudomorphic High Electron Mobility Transistor Description The EC2612 is based on a 0.15µm gate pseudomorphic high electron mobility transistor 0.15µm pHEMT technology. Gate width is 120µm and the 0.15µm
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EC2612
40GHz
EC2612
18GHz
40GHz
DSEC26120077
-17-Mar-00
ec2612 phemt
pHEMT transistor 30GHz
MAR 618 transistor
LS 9814
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ec2612 pHEMT
Abstract: pHEMT transistor 30GHz EC2612 TRANSISTOR 30GHZ
Text: EC2612 40GHz Super Low Noise PHEMT Pseudomorphic High Electron mobility transistor Description The EC2612 is based on a 0.15µm gate pseudomorphic high electron mobility transistor 0.15µm PHEMT technology. Gate width is 120µm and the 0.15µm T-shaped aluminium gate features low
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EC2612
40GHz
EC2612
18GHz
40GHz
DSEC26128099
ec2612 pHEMT
pHEMT transistor 30GHz
TRANSISTOR 30GHZ
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pHEMT transistor 30GHz
Abstract: EC2612 ec2612 pHEMT 158467
Text: EC2612 40GHz Super Low Noise PHEMT Pseudomorphic High Electron Mobility Transistor Description The EC2612 is based on a 0.15µm gate pseudomorphic high electron mobility transistor 0.15µm PHEMT technology. Gate width is 120µm and the 0.15µm T-shaped aluminium gate features low
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EC2612
40GHz
EC2612
18GHz
40GHz
DSEC26120077
-17-Marc-00
pHEMT transistor 30GHz
ec2612 pHEMT
158467
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02VO
Abstract: CHA4094
Text: CHA4094 36-40GHz High Power Amplifier GaAs Monolithic Microwave IC Description The CHA4094 is a high gain broadband threestage balanced monolithic power amplifier. It is designed for a wide range of applications, from military to commercial communication systems.
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CHA4094
36-40GHz
CHA4094
DSCHA40949025
02VO
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Untitled
Abstract: No abstract text available
Text: CHA2097a RoHS COMPLIANT 20-40GHz Variable Gain Amplifier GaAs Monolithic Microwave IC Description Vd1 The CHA2097a is a variable gain broadband three-stage monolithic amplifier. It is designed for a wide range of applications, from military to commercial communication
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CHA2097a
20-40GHz
CHA2097a
DSCHA20978021-21
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HEMT 36 ghz transistor
Abstract: low noise x band hemt transistor BP 109 transistor KA transistor 26 to 40 GHZ 40Ghz transistor
Text: EC2827 40GHz Super Low Noise HEMT AlGaAs/GaAs Field Effect Transistor Description The EC2827 is a Ka/K band Schottky barrier High Electron Mobility Transistor. This device is based on a 0.25µm mushroom Aluminium gate associated with an HEMT active layer and passivated with
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EC2827
40GHz
EC2827
18GHz
40GHz
DSEC28277003
HEMT 36 ghz transistor
low noise x band hemt transistor
BP 109 transistor
KA transistor 26 to 40 GHZ
40Ghz transistor
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Untitled
Abstract: No abstract text available
Text: CHA2097a 20-40GHz Variable Gain Amplifier GaAs Monolithic Microwave IC Description Vd1 The CHA2097a is a variable gain broadband three-stage monolithic amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The
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CHA2097a
20-40GHz
CHA2097a
20-40GHz
14dBm
DSCHA20978021
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Untitled
Abstract: No abstract text available
Text: CHA2095a RoHS COMPLIANT 36-40GHz Low Noise Very High Gain Amplifier GaAs Monolithic Microwave IC Description The CHA2095a is a four-stage monolithic low noise amplifier. It is designed for a wide range of applications, from military to commercial communication systems.
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CHA2095a
36-40GHz
CHA2095a
DSCHA20958147-27
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CHA2395
Abstract: No abstract text available
Text: CHA2395 RoHS COMPLIANT 36-40GHz Low Noise Very High Gain Amplifier GaAs Monolithic Microwave IC Description The CHA2395 is a four-stage monolithic low noise amplifier. It is designed for a wide range of applications, from military to commercial communication systems.
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CHA2395
36-40GHz
CHA2395
DSCHA23952240
-28-Aug
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c 4977 transistor
Abstract: transistor on 4436
Text: CHA2095a RoHS COMPLIANT 36-40GHz Low Noise Very High Gain Amplifier GaAs Monolithic Microwave IC Description The CHA2095a is a four-stage monolithic low noise amplifier. It is designed for a wide range of applications, from military to commercial communication systems.
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CHA2095a
36-40GHz
CHA2095a
DSCHA20958147
c 4977 transistor
transistor on 4436
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CHA2395
Abstract: No abstract text available
Text: CHA2395 RoHS COMPLIANT 36-40GHz Low Noise Very High Gain Amplifier GaAs Monolithic Microwave IC Description The CHA2395 is a four-stage monolithic low noise amplifier. It is designed for a wide range of applications, from military to commercial communication systems.
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CHA2395
36-40GHz
CHA2395
DSCHA23952240
-28-Aug
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CHA4094
Abstract: No abstract text available
Text: CHA4094 36-40GHz High Power Amplifier GaAs Monolithic Microwave IC Description The CHA4094 is a high gain broadband threestage balanced monolithic power amplifier. It is designed for a wide range of applications, from military to commercial communication systems.
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CHA4094
36-40GHz
CHA4094
DSCHA40949349
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Untitled
Abstract: No abstract text available
Text: CHA2095a RoHS COMPLIANT 36-40GHz Low Noise Very High Gain Amplifier GaAs Monolithic Microwave IC Description The CHA2095a is a four-stage monolithic low noise amplifier. It is designed for a wide range of applications, from military to commercial communication systems.
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CHA2095a
36-40GHz
CHA2095a
DSCHA20958147-27
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Untitled
Abstract: No abstract text available
Text: CHA2097a RoHS COMPLIANT 20-40GHz Variable Gain Amplifier GaAs Monolithic Microwave IC Description Vd1 The CHA2097a is a variable gain broadband three-stage monolithic amplifier. It is designed for a wide range of applications, from military to commercial communication
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CHA2097a
20-40GHz
CHA2097a
DSCHA20978021-21
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ec2612 phemt
Abstract: EC2612
Text: EC2612 40GHz Super Low Noise PHEMT Pseudomorphic High Electron Mobility Transistor ¦ Chip size : 0.63 x 0.37 x 0.1 mm Description The EC2612 is based on a 0.15µm gate pseudomorphic high electron mobility transistor 0.15µm PHEMT technology. Gate width is 120µm and the 0.15µm
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EC2612
40GHz
EC2612
18GHz
40GHz
DSEC26120077
-17-Marc-00
ec2612 phemt
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CHA2097
Abstract: No abstract text available
Text: CHA2097a RoHS COMPLIANT 20-40GHz Variable Gain Amplifier GaAs Monolithic Microwave IC Description Vd1 The CHA2097a is a variable gain broadband threestage monolithic amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip
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CHA2097a
20-40GHz
CHA2097a
DSCHA20978021
CHA2097
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c 4977 transistor
Abstract: No abstract text available
Text: CHA2095a 36-40GHz Low Noise Very High Gain Amplifier GaAs Monolithic Microwave IC Description The CHA2095a is a four-stage monolithic low noise amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a HEMT
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CHA2095a
36-40GHz
CHA2095a
DSCHA20958147
c 4977 transistor
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CHA2395
Abstract: transistor BP 109
Text: CHA2395 36-40GHz Low Noise Very High Gain Amplifier GaAs Monolithic Microwave IC Description The CHA2395 is a four-stage monolithic low noise amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a HEMT
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CHA2395
36-40GHz
CHA2395
DSCHA23952240
-28-Aug
transistor BP 109
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transistor on 4436
Abstract: c 4977 transistor
Text: CHA2095a 36-40GHz Low Noise Very High Gain Amplifier GaAs Monolithic Microwave IC Description The CHA2095a is a four-stage monolithic low noise amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a HEMT
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CHA2095a
36-40GHz
CHA2095a
DSCHA20958147
transistor on 4436
c 4977 transistor
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Untitled
Abstract: No abstract text available
Text: GaAs, pHEMT, MMIC, High Gain Power Amplifier, 2 GHz to 50 GHz HMC1127 Data Sheet FEATURES FUNCTIONAL BLOCK DIAGRAM VDD 2 HMC1127 3 RFIN RFOUT 1 5 VGG1 4 VGG2 13085-001 Output power for 1 dB compression P1dB : 12.5 dBm typical at 8 GHz to 30 GHz Saturated output power (PSAT): 17.5 dBm typical at 8 GHz to
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HMC1127
HMC112085-028
100pF
3-19-2015-A
D13085-0-5/15
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Untitled
Abstract: No abstract text available
Text: united monolithic semiconductors . a r*L i a A n n ;y a UrlA4Uy4 a « - 36-40GHz High Power Amplifier GaAs Monolithic Microwave 1C Vq Description Vd1,2 Vd3 The CHA4094 is a high gain broadband threestage balanced monolithic power amplifier. It is designed for a wide range of applications, from
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36-40GHz
CHA4094
DSCHA40949025
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super bonder 325
Abstract: ls40f
Text: EC1840 4 0 G H z LOW N O I SE FET G a A s F I E L D E F F E C T T R A N S I S T O R NOT FOR NEW DESIGNS. USE EC2827 REPLACEMENT. FEATURES • Low noise figure : N F min = 1.5dB typ. at 18GHz N F min. = 3dB (typ.) at 40GHz • High associated gain : G a = 11.5dB (typ.) at 18GHz
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EC1840
EC2827
18GHz
40GHz
40GHz.
25nmn
EC1840-99A/00
super bonder 325
ls40f
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