GT40J321
Abstract: TC4015
Text: 40J321 東芝伝導度変調型電界効果トランジスタ シリコンNチャネルIGBT 40J321 ○ 第 4 世代 単位: mm ○ 電流共振インバータスイッチング用 z 取り扱いが簡単なエンハンスメントタイプです。 z スイッチング時間が速い。 : tf = 0.11 s 標準 (IC = 40 A)
|
Original
|
GT40J321
2-16C1C
40J321
GT40J321
TC4015
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 40J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT 40J321 Current Resonance Inverter Switching Application • FRD included between emitter and collector • Enhancement mode type • High-speed IGBT: tf = 0.11 s typ. (IC = 40 A)
|
Original
|
GT40J321
|
PDF
|
GT40J321
Abstract: No abstract text available
Text: 40J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT 40J321 Current Resonance Inverter Switching Application • FRD included between emitter and collector • Enhancement mode type • High-speed IGBT: tf = 0.11 s typ. (IC = 40 A)
|
Original
|
GT40J321
GT40J321
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 40J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT 40J321 Current Resonance Inverter Switching Application • FRD included between emitter and collector • Enhancement mode type • High-speed IGBT: tf = 0.11 s typ. (IC = 40 A)
|
Original
|
GT40J321
|
PDF
|