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    40V COMPLEMENTARY MOSFET Search Results

    40V COMPLEMENTARY MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    40V COMPLEMENTARY MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    DUAL NPN SOT23-6

    Abstract: NPN SOT23-6 320 sot236 ZXTC2045E6TA marking E1 sot236 Surface mount NPN/PNP complementary transistor ZXTC2045E6 ZXTC2045E6TC MOSFET sot23-6 SOT23-6, complementary transistors
    Text: ZXTC2045E6 Dual 40V complementary transistors in SOT23-6 Summary BVCEV = 40V BVCEO = 30V Features • 40V complementary device • Up to 5 amps peak current • High hFE • SOT236 package C1 B1 Applications • C2 B2 MOSFET and IGBT gate driving E1 E2 Ordering information


    Original     		ZXTC2045E6 OT23-6 OT236 ZXTC2045E6TA ZXTC2045E6TC DUAL NPN SOT23-6 NPN SOT23-6 320 sot236 ZXTC2045E6TA marking E1 sot236 Surface mount NPN/PNP complementary transistor ZXTC2045E6 ZXTC2045E6TC MOSFET sot23-6 SOT23-6, complementary transistors PDF

    ZXTC2045E6TC

    Abstract: No abstract text available
    Text: ZXTC2045E6 Dual 40V complementary transistors in SOT23-6 Summary BVCEV = 40V BVCEO = 30V Features • 40V complementary device • Up to 5 amps peak current • High hFE • SOT236 package C1 • B2 B1 Applications C2 MOSFET and IGBT gate driving E1 E2 Ordering information


    Original     		ZXTC2045E6 OT23-6 OT236 ZXTC2045E6TA ZXTC2045E6TC ZXTC2045E6TC PDF

    ZXMC4A16DN8

    Abstract: ZXMC4A16DN8TA ZXMC4A16DN8TC
    Text: ZXMC4A16DN8 COMPLEMENTARY 40V ENHANCEMENT MODE MOSFET SUMMARY N-Channel = V BR DSS= 40V : RDS(on)= 0.05 ; ID= 5.2A P-Channel = V(BR)DSS= -40V : RDS(on)= 0.06 ; ID= -4.7A DESCRIPTION This new generation of trench MOSFETs from Zetex utilises a unique structure that combines the benefits


    Original     		ZXMC4A16DN8 ZXMC4A16DN8TA ZXMC4A16DN8TC ZXMC4A16DN8 ZXMC4A16DN8TA ZXMC4A16DN8TC PDF

    TS16949

    Abstract: ZXTN25040DZ ZXTN25040DZTA ZXTP25040DZ ZXTN
    Text: ZXTN25040DZ 40V, SOT89, NPN medium power transistor Summary BVCEX > 130V BVCEO > 40V BVECO > 6V IC cont = 5A VCE(sat) < 60mV @ 1A RCE(sat) = 38m⍀ PD = 2.4W Complementary part number ZXTP25040DZ Description C Packaged in the SOT89 outline this new low saturation 40V NPN


    Original     		ZXTN25040DZ ZXTP25040DZ D-81541 TS16949 ZXTN25040DZ ZXTN25040DZTA ZXTP25040DZ ZXTN PDF

    AO4618

    Abstract: No abstract text available
    Text: AO4618 40V Complementary MOSFET General Description Product Summary The AO4618 uses advanced trench technology to provide excellent RDS ON and low gate charge. This complementary N and P channel MOSFET configuration is ideal for low Input Voltage inverter applications.


    Original     		AO4618 AO4618 PDF

    Untitled

    Abstract: No abstract text available
    Text: AO4618 40V Complementary MOSFET General Description Product Summary The AO4618 uses advanced trench technology to provide excellent RDS ON and low gate charge. This complementary N and P channel MOSFET configuration is ideal for low Input Voltage inverter applications.


    Original     		AO4618 AO4618 PDF

    Untitled

    Abstract: No abstract text available
    Text: Advanced Power Electronics Corp. AP4525GEH-A-HF-3 Complementary N and P-channel Enhancement-mode Power MOSFETs Simple Drive Requirement N-CH BV DSS 40V Fast Switching Performance RDS ON 26mΩ RoHS-compliant, halogen-free ID BVDSS RDS(ON) ID 8.3A -40V 40mΩ


    Original     		AP4525GEH-A-HF-3 O-252-4L AP4525GEH-A-HF-3 O-252 AP4525-A 4525AGEH PDF

    Untitled

    Abstract: No abstract text available
    Text: Advanced Power Electronics Corp. AP4563AGH-HF-3 Complementary N and P-channel Enhancement-mode Power MOSFETs Simple Drive Requirement N-CH BV DSS 40V Fast Switching Performance RDS ON 20mΩ RoHS-compliant, halogen-free ID BVDSS RDS(ON) ID 9.6A -40V 36mΩ


    Original     		AP4563AGH-HF-3 O-252-4L AP4563AGH-HF-3 O-252 AP4563A 4563AGH PDF

    Untitled

    Abstract: No abstract text available
    Text: Advanced Power Electronics Corp. AP4543GEH-HF-3 Complementary N and P-channel Enhancement-mode Power MOSFETs Simple Drive Requirement N-CH BV DSS 40V Fast Switching Performance RDS ON 24mΩ RoHS-compliant, halogen-free ID BVDSS RDS(ON) ID 8.7A -40V 40mΩ


    Original     		AP4543GEH-HF-3 O-252-4L AP4543GEH-HF-3 O-252 AP4543 4543GEH PDF

    Untitled

    Abstract: No abstract text available
    Text: AO4618 40V Complementary MOSFET General Description Product Summary The AO4618 uses advanced trench technology to provide excellent RDS ON and low gate charge. This complementary N and P channel MOSFET configuration is ideal for low Input Voltage inverter applications.


    Original     		AO4618 AO4618 PDF

    Untitled

    Abstract: No abstract text available
    Text: Complementary MOSFET ELM544599A-N •General Description ■Features ELM544599A-N uses advanced trench technology to provide excellent Rds on and low gate charge. • N-channel Vds=40V, Id=8.0A, Rds(on)=22mΩ(Vgs=10V) Vds=40V, Id=6.0A, Rds(on)=28mΩ(Vgs=4.5V)


    Original     		ELM544599A-N ELM544599A-N AFP4599W PDF

    Untitled

    Abstract: No abstract text available
    Text: Advanced Power Electronics Corp. AP4563GH-HF-3 Complementary N and P-channel Enhancement-mode Power MOSFETs Simple Drive Requirement N-CH BV DSS 40V Fast Switching Performance RDS ON 30mΩ RoHS-compliant, halogen-free ID BVDSS RDS(ON) ID 30A -40V 36mΩ


    Original     		AP4563GH-HF-3 O-252-4L AP4563GH-HF-3 O-252 AP4563 4563GH PDF

    4525GEH

    Abstract: AP4525GEH-HF-3TR 4525GE
    Text: Advanced Power Electronics Corp. AP4525GEH-HF-3 Complementary N and P-channel Enhancement-mode Power MOSFETs Simple Drive Requirement N-CH BV DSS 40V Fast Switching Performance RDS ON 28mΩ RoHS-compliant, halogen-free ID BVDSS RDS(ON) ID 15A -40V 42mΩ


    Original     		AP4525GEH-HF-3 O-252-4L AP4525GEH-HF-3 O-252 AP4525 4525GEH 4525GEH AP4525GEH-HF-3TR 4525GE PDF

    Untitled

    Abstract: No abstract text available
    Text: DMC4029SSD COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary ADVANCE INFORMATION NEW PRODUCT Device RDS on max V(BR)DSS Q2 40V Q1 -40V Features and Benefits 24m @ VGS = 10V 32m @ VGS = 4.5V 45m @ VGS = -10V 55m @ VGS = -4.5V ID TA = +25°C


    Original     		DMC4029SSD AEC-Q101 DS36350 PDF

    Untitled

    Abstract: No abstract text available
    Text: Complementary MOSFET ELM35603KA-S •General Description ■Features ELM35603KA-S uses advanced trench technology to provide excellent Rds on and low gate charge. N-channel • • • • Vds=40V Vds=-40V Id=10A Id=-7A Rds(on) < 22mΩ(Vgs=10V) Rds(on) < 33mΩ(Vgs=-10V)


    Original     		ELM35603KA-S ELM35603KA-S P2204ND5G O-252-5 May-03-2006 PDF

    marking 1d2

    Abstract: ZETEX GATE DRIVER ZXTN07045EFF ZXTP07040DFF ZXTP07040DFFTA
    Text: ZXTP07040DFF 40V, SOT23F, PNP medium power transistor Summary; BVCEO > -40V BVECO > -3V IC cont = -3A VCE(sat) < -100mV @ 1A RCE(sat) = 67m⍀ PD = 1.5W Complementary part number ZXTN07045EFF Description C This low voltage PNP transistor has been designed for applications


    Original     		ZXTP07040DFF OT23F, -100mV ZXTN07045EFF OT23F OT23F marking 1d2 ZETEX GATE DRIVER ZXTN07045EFF ZXTP07040DFF ZXTP07040DFFTA PDF

    marking 1d2

    Abstract: No abstract text available
    Text: ZXTP07040DFF 40V, SOT23F, PNP medium power transistor Summary; BVCEO > -40V BVECO > -3V IC cont = -3A VCE(sat) < -100mV @ 1A RCE(sat) = 67m⍀ PD = 1.5W Complementary part number ZXTN07045EFF Description C This low voltage PNP transistor has been designed for applications


    Original     		ZXTP07040DFF OT23F, -100mV ZXTN07045EFF OT23F OT23F marking 1d2 PDF

    ZXTP25040DZTA

    Abstract: TS16949 ZXTN25040DZ ZXTP25040DZ marking 1l6
    Text: ZXTP25040DZ 40V PNP medium power transistor in SOT89 Summary BVCEO > -40V BVECO > -3V IC cont = -3.5A RCE(sat) = 55m⍀ VCE(sat) < -90mV @ 1A PD = 2.4W Complementary part number ZXTN25040DZ Description C Advanced process capability and package design have been used to


    Original     		ZXTP25040DZ -90mV ZXTN25040DZ D-81541 ZXTP25040DZTA TS16949 ZXTN25040DZ ZXTP25040DZ marking 1l6 PDF

    ZXTN25040DFH

    Abstract: ZXTP25040DFH ZXTP25040DFHTA
    Text: ZXTP25040DFH 40V SOT23 PNP medium power transistor Summary BVCEO > -40V BVECO > -3V ; IC CONT = -3A RCE(sat) = 55 m⍀ ; VCE(sat) < -85mV @ 1A ; PD = 1.25W Complementary part number ZXTN25040DFH Description C Advanced process capability and package design have been used to


    Original     		ZXTP25040DFH -85mV ZXTN25040DFH ZXTN25040DFH ZXTP25040DFH ZXTP25040DFHTA PDF

    Untitled

    Abstract: No abstract text available
    Text: ZXTP25040DZ 40V PNP medium power transistor in SOT89 Summary BVCEO > -40V BVECO > -3V IC cont = -3.5A RCE(sat) = 55m⍀ VCE(sat) < -90mV @ 1A PD = 2.4W Complementary part number ZXTN25040DZ Description C Advanced process capability and package design have been used to


    Original     		ZXTP25040DZ -90mV ZXTN25040DZ D-81541 PDF

    ZXTP25040DFLTA

    Abstract: No abstract text available
    Text: ZXTP25040DFL 40V, SOT23, PNP low power transistor Summary BVCEO > -40V BVECO > -3V IC cont = -1.5A VCE(sat) < -110mV @ 1A RCE(sat) = 80m⍀ PD = 350mW Complementary part number ZXTN25040DFL Description C Advanced process capability has been used to achieve high current gain


    Original     		ZXTP25040DFL -110mV 350mW ZXTN25040DFL ZXTP25040DFLTA PDF

    ZETEX medium power complementary transistors

    Abstract: 65 marking sot23 ZXTN25040DFH ZXTP25040DFH ZXTP25040DFHTA
    Text: ZXTP25040DFH 40V SOT23 PNP medium power transistor Summary BVCEO > -40V BVECO > -3V ; IC CONT = -3A RCE(sat) = 55 m⍀ ; VCE(sat) < -85mV @ 1A ; PD = 1.25W Complementary part number ZXTN25040DFH Description C Advanced process capability and package design have been used to


    Original     		ZXTP25040DFH -85mV ZXTN25040DFH ZETEX medium power complementary transistors 65 marking sot23 ZXTN25040DFH ZXTP25040DFH ZXTP25040DFHTA PDF

    ZXTN25040DFH

    Abstract: ZXTP25040DFH ZXTP25040DFHTA Marking 024
    Text: ZXTP25040DFH 40V SOT23 PNP medium power transistor Summary BVCEO > -40V BVECO > -3V ; IC CONT = -3A RCE(sat) = 55 m⍀ ; VCE(sat) < -85mV @ 1A ; PD = 1.25W Complementary part number ZXTN25040DFH Description C Advanced process capability and package design have been used to


    Original     		ZXTP25040DFH -85mV ZXTN25040DFH ZXTN25040DFH ZXTP25040DFH ZXTP25040DFHTA Marking 024 PDF

    ZXTP25040DFHTA

    Abstract: No abstract text available
    Text: ZXTP25040DFH 40V SOT23 PNP medium power transistor Summary BVCEO > -40V BVECO > -3V ; IC CONT = -3A RCE(sat) = 55 m⍀ ; VCE(sat) < -85mV @ 1A ; PD = 1.25W Complementary part number ZXTN25040DFH Description C Advanced process capability and package design have been used to


    Original     		ZXTP25040DFH -85mV ZXTN25040DFH ZXTP25040DFHTA PDF