414 RF TRANSISTOR Search Results

414 RF TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
CA3082	Rochester Electronics LLC	CA3082 - Small Signal Bipolar Transistor
CA3081F	Rochester Electronics LLC	CA3081 - Small Signal Bipolar Transistor
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold

414 RF TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
transistor BF 414 Abstract: 414 rf transistor 414 transistor K 414 transistor BF 414 BF414 BF transistor datasheet VCE0-30V marking 414 Text: BF 414 NPN Silicon RF Transistor ● BF 414 For low-noise, common base VHF and FM stages 2 3 1 Type Marking Ordering Code BF 414 – Q62702-F517 Pin Configuration 1 2 3 C B Package1 TO-92 E Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage	Original	Q62702-F517 transistor BF 414 414 rf transistor 414 transistor K 414 transistor BF 414 BF414 BF transistor datasheet VCE0-30V marking 414	PDF
transistor BF 414 Abstract: No abstract text available Text: SIEMENS NPN Silicon RF Transistor BF 414 • For low-noise, common base VH F and FM stages Type Marking Ordering Code BF 414 - Q62702-F517 Pin Co nfiguraltion 1 2 3 B C Package1 E TO-92 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage	OCR Scan	Q62702-F517 transistor BF 414	PDF
BF414 Abstract: transistor BF 414 414 transistor BF 414 marking code B1C TRANSISTOR MARKING CODE "SP" K 414 transistor Text: TELEFUNKEN ELECTRONIC Û1 C D • ô'tëO D 'Jt. 0 0 Q5 2 G4 fi 7 BF 414 M electronic TO Creative Technologies Silicon PNP Epitaxial Planar RF Transistor Applications: VHF input stages in common base configuration Features: • Small feedback capacitance • Large signal to intermodulation ratio	OCR Scan		PDF
MRF181SR1 Abstract: No abstract text available Text: Section Two Motorola RF Discrete Transistors – Data Sheets Device Number Page Number Device Number Page Number MRF134 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2–3 MRF373 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2–258	Original	MRF134 MRF136 MRF141 MRF141G MRF148A MRF150 MRF151 MRF21090 MRF21090S MRF21120 MRF181SR1	PDF
heat sink design guide, IGBT Abstract: EVIC420A RF MOSFETs evic TO-264 heat sink to220 ixys to-247 DEIC DE275 igbt to247 Text: Gate Drive Evaluation Boards MOSFET/IGBT Gate Drive Modules/Gate Drive 1C Evaluation Boards The EV-Series MOSFET Gate Drive Modules are general purpose gate drive circuits designed to drive the DE-Series RF POWER MOSFETs, as well as industry-standard MOSFETs	OCR Scan	O-220, O-247, O-264 OT-227 boar15 T0-220, O-264, heat sink design guide, IGBT EVIC420A RF MOSFETs evic TO-264 heat sink to220 ixys to-247 DEIC DE275 igbt to247	PDF
transistor BF 257 Abstract: bf414 transistor BF 414 tfk 513 BF 414 transistor BF 258 414 transistor AI-257 db258 Kleine Text: Silizium-PNP-Epitaxial-Planar-HF-Transistor Silicon PNP Epitaxial Planar RF Transistor Anwendungen: VHF-Eingangsstufen in Basisschaltung Applications: VHF input stages in com m on base configuration Besondere Merkmale: Features: • Kleine R ückwirkungskapazität	OCR Scan		PDF
Untitled Abstract: No abstract text available Text: » w / IjF i Com I¡near ÜLJ Corporation Quad, Low-Power Monolithic Op Amp CLC414 APPLICATIONS: FEATURES typical : • • • • • • • • • • • • • • • com posite video distribution amps H D TV am plifiers R G B-video am plifiers CCD signal processing	OCR Scan	CLC414 000V//XS CLC414	PDF
BF606 Abstract: BF254 BF414 BF763 BF255 BF450 BF 414 BF979 to-92 type BF979S Text: Transistors — bipolar RF tran sisto rs P la stic p acka g e T O 92 NPN PNP = = N Vceo P Figure Characteristics TA = 25°C Maximum ratings Type lc P.O. tore /cBO V^CEaat ft mA Vce V nA V MHz lc leu* V mA mW BF 199 N 25 25 500 85 (> 38) 7 10 <100 - 550 BF 240	OCR Scan		PDF
PO32 Abstract: 33J6 PH1600 Text: n/A-con p 2S E o h D • 5^42205 n D G Q S 7b 273 ■ HAP - T-3 3 -H M /A-COM PHI, IN C. 1742 CRENSHAW BLVD, TORRANCE, CALIFORNIA 9 0 5 0 1 213 320-6160 TWX 910-349-6651 FAX 213-618-9191 A # A > M/A-COM PHI, INC. PRELIMINARY DATA SHEET BIPOLAR NPN RF POWER TRANSISTOR	OCR Scan	PH1600-32 F--06 PH1600-32 1600MHZ 470pF 015uF F--07 PO32 33J6 PH1600	PDF
MRF1375 Abstract: No abstract text available Text: MOTOROLA Order this document by MRF1375/D SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Pulse Power Transistor MRF1375 Designed for 1025 –1150 MHz pulse common base amplifier applications such as TACAN and DME. • Guaranteed Performance @ 1090 MHz	Original	MRF1375/D MRF1375 MRF1375/D* MRF1375	PDF
npn 222 Abstract: 251bf "AGC Amplifier" AM "AGC Amplifier" AM FM radio AM/FM bf 233 BF222 agc amplifier F VHF amplifier Text: CONSUMER TRANSISTORS continued o Q. > i> 0 CL Li] CD >~ < O ÜJ ÜJ JE > > U. o _c s> 0) > X o L» CM II I- rsi X ¡2 ro 1- P A CKAG E cc < NF (dB) h PG (dB) > DESCRIPTIO N TYPE RF amplifiers-mixer/oscillators 3 _E □ o_ 800 200 600 TO-72 6.5 800 175 550 TO-72	OCR Scan	00U1CJ1CJ10 O-7211) npn 222 251bf "AGC Amplifier" AM "AGC Amplifier" AM FM radio AM/FM bf 233 BF222 agc amplifier F VHF amplifier	PDF
BVC71 Abstract: BCV71R BCV71 BCV72 BCV72R DS42 S0T23 ctc4 Text: BCV71 BCV72 S0T 23 NPN SILICON PLANAR SM ALL SIGNAL TRANSISTOR PA RT M A RKIN G DETAILS:BVC71 - K7 BCV72 - K8 BCV 71R - K6 BCV 72R - K9 ABSOLUTE M A X IM U M RATINGS PARAM ETER SYM BO L VALUE U N IT Collector-Base Voltage V CBO 80 V Collector-Em itter Voltage	OCR Scan	S0T23 BCV71 BCV72 -BVC71 BCV71R BCV72R 35MHz BVC71 DS42 ctc4	PDF
Untitled Abstract: No abstract text available Text: Part Number: Integra IB1214M55 TECHNOLOGIES, INC. Silicon Bipolar  Ultra-high fT L-Band Radar Transistor Class C Operation  High Efficiency The high power pulsed radar transistor device part number IB1214M55 is designed for L-Band radar systems operating over	Original	IB1214M55 IB1214M55 IB1214M55-REV-NC-DS-REV-C	PDF
gsm 900 amplifier Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors MRF9080 MRF9080S N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband performance of these devices make them ideal for large–signal, common–	Original	MRF9080 MRF9080S gsm 900 amplifier	PDF

BFR92 Abstract: BFR92A P1 BFR92A b41 Marking BFR92A Transistor BFR92 transistor Text: / = T SGS-THOMSON ^ 7 # MOrami@ra M©t BFR92 BFR92A SMALL SIGNAL NPN RF TRANSISTOR Type Marking BFR92 P1 BFR92A P2 . SILICON EPITAXIAL PLANAR NPN TRANSISTORS . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS . GOLD METALLIZED TRANSISTOR FOR	OCR Scan	BFR92 BFR92A BFR92A OT-23 SC06960 BFR92/BFR92A OT-23 BFR92A P1 b41 Marking BFR92A Transistor BFR92 transistor	PDF
cl 740 Abstract: tss405 PO65 7w RF POWER TRANSISTOR NPN PH1600 Text: n,n/A-con p h asE D o ÜDDDSbô 1T7 • HA P T - 33-01 M /A -C O M PH I, IN C . 1742 CRENSHAW BLVD. TORRANCE, CALIFORNIA 90501 213 320-6160 TWX 910-349-6651 FAX 213-618-9191 M/A-COM PHI, INC. PRELIMINARY DATA SHEET BIPOLAR NPN RF POWER TRANSISTOR FEATURES	OCR Scan	PH1600-6 Sb4250S 00DDS71 1600MHZ 21-Z12 470pF 015uF cl 740 tss405 PO65 7w RF POWER TRANSISTOR NPN PH1600	PDF
2SB546 Abstract: 2SB541 2SB542 138B 2SB544 2SB547 2SD386 Text: - 5 - FOR USE BY ELECTRICIANS OVERSEAS : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English	OCR Scan	Tr--25 2SB546 2SB541 2SB542 138B 2SB544 2SB547 2SD386	PDF
n channel MOSFET 45 w 10 v Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21125 MRF21125S MRF21125SR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110	Original	MRF21125S MRF21125SR3 MRF21125 n channel MOSFET 45 w 10 v	PDF
transistor K 1413 Abstract: D 1413 transistor MARKING NJ CODE SOT 23 k 1413 FET sf-471 TRANSISTOR D 471 BF471S BF469S BF470S S110 Text: .I TELEFUNKEN ELECTRONIC 17E D • ÛTSOCHb o o o i m i BF 469Ö BF 471 S ‘¡nUilPMKIKi electronic Creaiiv* techootojK» T * 3 2 -O S “ Silicon NPN Epitaxial Planar RF Transistors Applications: Video B-class power stages in TV-receivers Features: • BF 469 S complementary to BF470S	OCR Scan	BF470S DIN41 BF469S T0126 15A3DIN transistor K 1413 D 1413 transistor MARKING NJ CODE SOT 23 k 1413 FET sf-471 TRANSISTOR D 471 BF471S BF469S BF470S S110	PDF
ELTEC INSTRUMENTS Abstract: No abstract text available Text: 414 Series Opposed Dual Pyroelectric IR Detector with Source Follower E LH T E C Manufactured under one or more of the following US patents 3,839.640 - 4.218,620 - 4.326,663 - 4,384207 - 4,437,003 4,441,023 - 4.523,095 .040 SPACING r T 1.0 ELEMENT T.O080	OCR Scan	1000jxm ELTEC INSTRUMENTS	PDF
BF441 Abstract: BF509 BF 184 transistor BF 145 transistor BF440 BF 145 BF680 transistor BF 509 BFS20 BFS62 Text: RF transistors Type Structure Silicon transistors Fifl. Nr. Maximum ratings Characteristics A c t a* I q anc ^CE V mA f j at MHz 48-167 1 10 a 27 4 10 7 a 38 67-220 1 36-125 1 10 30 25 £27 40 40 c iire a UCB V PF 230 1 0.65 10 350 4 0.15 10 550 260 200 5	OCR Scan	BFS20 BFS62 BFX89 BFY88O BF441 BF509 BF 184 transistor BF 145 transistor BF440 BF 145 BF680 transistor BF 509	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Rev. 2, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S19060NR1 MRF5S19060NBR1 MRF5S19060MR1 MRF5S19060MBR1 Designed for broadband commercial and industrial applications with	Original	22060MR1 MRF5S19060MBR1 MRF5S19060NR1 MRF5S19060NBR1 MRF5S19060MR1	PDF
Transistors BF 324 Abstract: AM-FM TUNER BF252 UHF "AGC Amplifier" AGC Amplifiers radio diode SR 506 "AGC Amplifier" bf 245 fa 506 bf 233 Text: CONSUMER TRANSISTORS IF amplifiers @ o o m LU U ai > > and @ ÍD < < O < E I- C3 CL Q_ @ □ a . BF 158 NPN IF a m p lifie r fo r T V BF 160 NPN IF a m p lifie r fo r AM -FM radio 12 12 BF 167 NPN AG C-l F a m p lifie r fo r T V 30 BF 173 NPN IF vision am p-output stage	OCR Scan	T0-18 00U1CJ1CJ10 O-7211) Transistors BF 324 AM-FM TUNER BF252 UHF "AGC Amplifier" AGC Amplifiers radio diode SR 506 "AGC Amplifier" bf 245 fa 506 bf 233	PDF
Untitled Abstract: No abstract text available Text: SIEMENS BFQ 81 NPN Silicon RF Transistor • For low-noise amplifiers up to 2GHz and broadband analog and digital applications in telecommunications systems at collector currents from 0.5 mA to 20 mA. ESP: Electrostatic discharge sensitive device, observe handling precaution!	OCR Scan	Q62702-F1049 OT-23 900MHz	PDF

414 RF TRANSISTOR Search Results

414 RF TRANSISTOR Result Highlights (5)

414 RF TRANSISTOR Datasheets Context Search

transistor BF 414

transistor BF 414

BF414

MRF181SR1

heat sink design guide, IGBT

transistor BF 257

Untitled

BF606

PO32

MRF1375

npn 222

BVC71

Untitled

gsm 900 amplifier

BFR92

cl 740

2SB546

n channel MOSFET 45 w 10 v

transistor K 1413

ELTEC INSTRUMENTS

BF441

Untitled

Transistors BF 324

Untitled