RLCD-M66H-750
Abstract: No abstract text available
Text: ROITHNER LASERTECHNIK PRESENTS NEW VIOLET CW LASER DIODES DL-3146-151, 405 nm, 5 mW, 5.6 mm, SANYO, with photodiode only EUR 99.90 DL-4146-101S, 405 nm, 20 mW, 75 °C, 5.6 mm, SANYO, with photodiode DL-5146-101S, 405 nm, 40 mW, 75 °C, 5.6 mm, SANYO, with photodiode
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DL-3146-151,
DL-4146-101S,
DL-5146-101S,
NDV4313,
RLT415-500PMG,
RLT415-1000PMG,
VLM-CW405-14-OF-SM,
DC-100
RLCD-M66H-750
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RLT415-50CMG
Abstract: No abstract text available
Text: RLT415-50CMG Co m p li es w ith R o H S 20 02/ 95 / W E d ir ec t i ve Description RLT415-50CMG is an Violet Laser Diode emitting at 415 nm with rated output power of 50 mW CW at room temperature, in standard 5.6mm TO package. Maximum Ratings Parameter Symbol
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RLT415-50CMG
RLT415-50CMG
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VL415-3-20
Abstract: No abstract text available
Text: VL415-3-20 v 2.0 06.06.2014 Description VL415-3-20 is a InGaN based Light Emitting Diode with a typical peak wavelength of 415 nm and radiation of 10-16 mW. It is mounted on a lead frame and encapsulated in a 3 mm clear UV-resistant epoxy resin, which provides a viewing angle of 20°.
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VL415-3-20
VL415-3-20
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VL415-5-15
Abstract: No abstract text available
Text: VL415-5-15 v 2.0 06.06.2014 Description VL415-5-15 is a InGaN based Light Emitting Diode with a typical peak wavelength of 415 nm and radiation of 10-16 mW. It is mounted on a lead frame and encapsulated in a 5 mm clear UV-resistant epoxy resin, which provides a viewing angle of 15°.
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VL415-5-15
VL415-5-15
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transistor 415
Abstract: OHRD1938 Q62702-P1137 Q62702-P1139 Q62702-P296
Text: GaAs-IR-Lumineszenzdioden GaAs Infrared Emitters SFH 415 SFH 416 SFH 415 SFH 416 Wesentliche Merkmale • GaAs-LED mit sehr hohem Wirkungsgrad • Hohe Zuverlässigkeit • Gute spektrale Anpassung an Si-Fotoempfänger • SFH 415: Gehäusegleich mit SFH 300,
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GEOY6645
GEXY6630
transistor 415
OHRD1938
Q62702-P1137
Q62702-P1139
Q62702-P296
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transistor 415
Abstract: MARKING 416 OPTO OHRD1938 Q62702-P1137 Q62702-P1139 Q62702-P296 SFH 960
Text: GaAs-IR-Lumineszenzdioden GaAs Infrared Emitters SFH 415 SFH 416 SFH 415 SFH 416 Wesentliche Merkmale • GaAs-LED mit sehr hohem Wirkungsgrad • Hohe Zuverlässigkeit • Gute spektrale Anpassung an Si-Fotoempfänger • SFH 415: Gehäusegleich mit SFH 300,
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stea01-01
GEO06645
GEX06630
transistor 415
MARKING 416 OPTO
OHRD1938
Q62702-P1137
Q62702-P1139
Q62702-P296
SFH 960
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sfh 517
Abstract: Q62702-P1136 Q62702-P1137 Q62702-P1139 Q62702-P296 TA521 SFH415
Text: SFH 415 SFH 416 SFH 415 SFH 416 fex06630 fexf6626 GaAs-IR-Lumineszenzdioden GaAs Infrared Emitters Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale Features ● GaAs-IR-Lumineszenzdioden, hergestellt
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fex06630
fexf6626
415-T
415-U
416-R
sfh 517
Q62702-P1136
Q62702-P1137
Q62702-P1139
Q62702-P296
TA521
SFH415
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transistor 415
Abstract: GEO06645 GEX06630 OHRD1938 Q62702-P1136 Q62702-P1137 Q62702-P1139 Q62702-P296 transistor sr 61
Text: GaAs-IR-Lumineszenzdioden GaAs Infrared Emitters SFH 415 SFH 416 Cathode 29 27 7.8 7.5 5.9 5.5 4.8 4.2 Area not flat 0.6 0.4 fexf6626 0.4 0.6 ø4.8 ø5.1 0.4 0.8 spacing 2.54mm 1.8 1.2 9.0 8.2 GEO06645 Chip position Approx. weight 0.2 g 5.9 5.5 0.6 0.4 4.0
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fexf6626
GEO06645
GEX06630
fex06630
OHR01553
OHR00860
transistor 415
GEO06645
GEX06630
OHRD1938
Q62702-P1136
Q62702-P1137
Q62702-P1139
Q62702-P296
transistor sr 61
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GEO06645
Abstract: GEX06630 OHRD1938 Q62702-P1136 Q62702-P1137 Q62702-P1139 Q62702-P296
Text: GaAs-IR-Lumineszenzdioden GaAs Infrared Emitters SFH 415 SFH 416 Cathode 29 27 7.8 7.5 5.9 5.5 4.8 4.2 Area not flat fexf6626 0.4 0.6 ø4.8 ø5.1 0.4 0.8 spacing 2.54 mm 1.8 1.2 9.0 8.2 0.6 0.4 GEO06645 Chip position Area not flat 29.5 27.5 Cathode Diode
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fexf6626
GEO06645
fex06630
GEX06630
OHR01553
OHR00860
GEO06645
GEX06630
OHRD1938
Q62702-P1136
Q62702-P1137
Q62702-P1139
Q62702-P296
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Untitled
Abstract: No abstract text available
Text: GaAs-IR-Lumineszenzdioden GaAs Infrared Emitters SFH 415 SFH 416 SFH 415 SFH 416 Wesentliche Merkmale Features • GaAs-LED mit sehr hohem Wirkungsgrad • Hohe Zuverlässigkeit • Gute spektrale Anpassung an Si-Fotoempfänger • SFH 415: Gehäusegleich mit SFH 300,
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415-U
416-R
Q62702-P296
Q62702-P1137
Q62702-P1139
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OHRD1938
Abstract: Q62702-P1137 Q62702-P1139 Q62702-P296
Text: GaAs-IR-Lumineszenzdioden GaAs Infrared Emitters SFH 415 SFH 416 SFH 415 SFH 416 Wesentliche Merkmale Features • GaAs-LED mit sehr hohem Wirkungsgrad • Hohe Zuverlässigkeit • Gute spektrale Anpassung an Si-Fotoempfänger • SFH 415: Gehäusegleich mit SFH 300,
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ms 415
Abstract: design opto interrupter OHRD1938 Q62702-P1137
Text: GaAs-IR-Lumineszenzdioden GaAs Infrared Emitters Lead Pb Free Product - RoHS Compliant SFH 415 Wesentliche Merkmale Features • GaAs-LED mit sehr hohem Wirkungsgrad • Hohe Zuverlässigkeit • Gute spektrale Anpassung an Si-Fotoempfänger • SFH 415: Gehäusegleich mit SFH 300,
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Untitled
Abstract: No abstract text available
Text: GaAs-IR-Lumineszenzdioden GaAs Infrared Emitters SFH 415 Wesentliche Merkmale Features • GaAs-LED mit sehr hohem Wirkungsgrad • Hohe Zuverlässigkeit • Gute spektrale Anpassung an Si-Fotoempfänger • SFH 415: Gehäusegleich mit SFH 300, SFH 203 •
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415-U
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Untitled
Abstract: No abstract text available
Text: GaAs-IR-Lumineszenzdioden GaAs Infrared Emitters Lead Pb Free Product - RoHS Compliant SFH 415 Wesentliche Merkmale Features • GaAs-LED mit sehr hohem Wirkungsgrad • Hohe Zuverlässigkeit • Gute spektrale Anpassung an Si-Fotoempfänger • SFH 415: Gehäusegleich mit SFH 300,
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415-U
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HL7806
Abstract: 6808X L7851 hl7852 HL6411G HL8325G hitachi HL7852 hl7806g HL7851
Text: Product Lineup W avelength Visible and infrared laser diodes 633 nm O ptical output 3 mW Internal circuit Part num ber Main application LD ^P * HL6314M G HL6316G HL6411G* Pointer HL6315G f Pointer HL6312G Bar code reader H L 6313G t Bar code reader HL6720G
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HL6314M
HL6316G
HL6411G*
HL6315G
HL6312G
6313G
HL6720G
HL6724M
HL6712G
HL6722G
HL7806
6808X
L7851
hl7852
HL6411G
HL8325G
hitachi HL7852
hl7806g
HL7851
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Untitled
Abstract: No abstract text available
Text: HL1521 A/AC InGaAsP LD Description The HL1521A/AC are 1.55 nm band laser diodes with a double heterostructure. Features Long wavelength output: = 1530 to 1570 nm 5 mW CW operation at room temperature Fast pulse response: tp tf < 0.5 ns Package Type • HL1521 A: A1
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HL1521
HL1521A/AC
HL1521AC:
cJb20S
D0143flh
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Untitled
Abstract: No abstract text available
Text: H L 1 3 2 2 A /A C InGaAsP LD Description The HL1322A/AC are 1.3 jm band InGaAsP laser diodes with a double heterojunction structure. They are relatively high power output (10 mW devices as compared to the HLP5400 or the HL1321AC. They are suitable as light sources for high capacity long distance optical fiber communication systems and various
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HL1322A/AC
HLP5400
HL1321AC.
HL1322A:
HL1322AC:
HL1322A/AC
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Untitled
Abstract: No abstract text available
Text: SIEMENS GaAs-IR-Lumineszenzdioden GaAs Infrared Emitters SFH 415 SFH 416 Wesentliche Merkmale Features • GaAs-IR-Lumineszenzdioden, hergestellt im Schmelzepitaxieverfahren • Gute Linearität /e = /[/p ] bei hohen Strömen • Sehr hoher Wirkungsgrad
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fl235b05
0DS7717
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HL1321BF
Abstract: No abstract text available
Text: HL1321AC/BF/DL/DM, HLP5400_ inGaAsP LD Description The HL1321 AC/BF/DL/DM and HLP5400 are 1.3 nm band InGaAsP laser diodes with a double het erostructure. They are suitable as light sources for optical fiber communication systems and various types
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HL1321AC/BF/DL/DM,
HLP5400_
HL1321
HLP5400
HLP5400)
HL1321AC:
HLP5400:
HL1321BF/DL)
HL1321BF
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Untitled
Abstract: No abstract text available
Text: SIEMENS GaAs-IR-Lumineszenzdioden GaAs Infrared Emitters SFH415 SFH 416 Area not flat o Cathode Diode Collector (Transistor) CO (O (O o X 0) GEX06630 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. W esentliche Merkmale
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SFH415
GEX06630
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SFH 756
Abstract: No abstract text available
Text: IR-Lumineszenzdioden Infrared Emitters 1. GaAs-IRED Forts. Package Type 1. GaAs IRED (cont’d) <P deg. Ordering code I. mW/sr 1.3 in SMT package (^pMK = 950 nm) VF = 1.3 V (If = 100 mA) 1.3 im SMT-Gehäuse (Xpeak = 950 nm) Vr = 1,3 V (/F= 100 mA) SFH 420
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415-T
415-U
416-R
SFH 756
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B5G5
Abstract: diode b5g5 B20S HL1321AC HL1321BF HL1321DL HL1321DM HLP5400 Hitachi Scans-001
Text: HL1321 AC/BF/DL/DM, HLP5400 InGaAsP LD Description The HL1321AC/BF/DL/DM and HLP5400 are 1.3 |im band InGaAsP laser diodes with a double het erostructure. They are suitable as light sources for optical fiber communication systems and various types of optical equipment.
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HL1321AC/BF/DL/DM,
HLP5400
HL1321
HLP5400)
HL1321AC:
HLP5400:
0143HÃ
B5G5
diode b5g5
B20S
HL1321AC
HL1321BF
HL1321DL
HL1321DM
Hitachi Scans-001
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sfh 517
Abstract: diodes 415
Text: SIEMENS GaAs-IR-Lumineszenzdioden GaAs Infrared Emitters SFH 415 SFH 416 Cathode 7.5 EL •r. E N, * u/ 4.8 Area not f l a t ' Chip p o s itio n ' A p pro x. w e ight 0.2 g Area not fla t 1.2 29 .5 _ 27.5 Chip position Cathode D iode C o llector (T ra n s is to r)
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415-T
416-R
415-U
sfh 517
diodes 415
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Untitled
Abstract: No abstract text available
Text: HlTACHI/ OPTO ELECTRONICS S l4E I) • MMTbEOS DOieO^l lfl7 B H I T M H L 1 3 2 1 A C /F G /B F /P L /P M , H L P 5 4 0 0 Description inGaAsP LD -r^ m -c n The HL1321AC/FG/BF/DL/DM and HLP5400 are double heterojunction 1.3 (im band InGaAsP laser diodes.
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HL1321AC/FG/BF/DL/DM
HLP5400
HLP5400)
HL1321BF/DL)
HL1321AC/FG/BF/DL/DM,
HLP5400
44Sb20S
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