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    4154 DIODE Search Results

    4154 DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    4154 DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: eS&mi-donduotoi {Product*., dnc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A, TELEPHONE: 201 376-2922 (212)227-6005 FAX: (201)376-8960 general purpose and switching diodes high sp««d switching Tomb = TVMI IN 4)48 IN 4149 IN 4151 IN 4152 IN 4153 IN 4154


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    Untitled

    Abstract: No abstract text available
    Text: f^£.mL-L.ona.u.ctoi iJ^ioaucti, Line. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 general purpose and switching diodes high sp«*d switching Tomb = 25'C TypM VH-VUM m«« (V) '0 V, mo" 0)


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    Untitled

    Abstract: No abstract text available
    Text: IGC04R60D TRENCHSTOPTM RC-Series for hard switching applications IGBT chip with monolithically integrated diode in packages offering space saving advantage Features: TRENCHSTOPTM Reverse Conducting RC technology for 600V applications offering: • Optimised VCEsat and VF for low conduction losses


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    IGC04R60D 20kHz PDF

    Untitled

    Abstract: No abstract text available
    Text: Te m ic LL4154 TELEFUNKEN Semiconductors Silicon Epitaxial Planar Diodes Features • Electrical data identical w ith the d evice 1N 4154 Applications E xtrem e fast sw itch es Absolute Maximum Ratings T, = 2 5 3C P aram eter R epetitive peak reverse voltage


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    LL4154 PDF

    aeg diode

    Abstract: RG201 diode aeg ir 0588 LL4154 DIODE WITH SOD CASE
    Text: AEG CORP 17E I> aOSTHeb 00QTÔ77 b LL4154 il electronic tu li Creative Technologies Silicon Epitaxial Planar Diode T - G Z - O Applications: Extreme fast switches Features: • Electrical data identical with the device 1N 4154 Dimensions in mm Terminals are tin plated


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    0Q5ci45Ã LL4154 r-G2-01 mmx50 11-jr aeg diode RG201 diode aeg ir 0588 LL4154 DIODE WITH SOD CASE PDF

    aeg d 188

    Abstract: aeg d 188 s 1000 ir 0588 DIN 4154 BR135
    Text: A E G CORP 17E D 002T42b OOCHflT? 1 1N 4154 S electronic CreativeTechnotogies Silicon Epitaxial Planar Diode A p p lica tio n s: Extreme fast switches D im en sio n s In m m ottoe Cathode \ -I I - II- 11 <3.9 1 >26 g<tfl / *<0.65 • »


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    rLS25Â aeg d 188 aeg d 188 s 1000 ir 0588 DIN 4154 BR135 PDF

    4154 diode

    Abstract: DIN 4154 1N4154 41880 AC2091 4154
    Text: 4M» 1 N 4154 'W Silizium-Epitaxial-Planar-Diode Silicon epitaxial planar diode Anwendungen: Extrem schnelle Schalter Applications: Extrem fast switches Abmessungen in mm Dimensions In mm »'»• 01,9 KATHODE 00.55 Normgehäuse Case 54 A 2 DIN 4 1 8 80 JEDEC DO 35


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    Untitled

    Abstract: No abstract text available
    Text: MCL4154 vtsM A Y ▼ Vishay Telefunken Silicon Epitaxial Planar Diode Features • Electrical data Identical with the device 1N 4154 • M icro M elf package 96 12315 Applications Extrem e fa st sw itches Absolute Maximum Ratings Tj = 2 5 °C Param eter Test C onditions


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    MCL4154 D-74025 01-Apr-99 PDF

    1N4140

    Abstract: 1N4305 diode in 4148 diode 1N4151
    Text: I n t e r n a t io n a l S e m ic o n d u c to r , I n c . 1N 4148 1N 4446 thru thru 1N 4154 1N 4454 1N 4305 GENERAL PURPOSE PLANAR DIODES DIFFUSED SILICON PLANAR ELECTRICAL CHARACTERISTICS À at 25°C unless otherwise specified Maximum Maximum »laximum IS I


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    1N4148 1N4140 1N4150 1N4151 1N4152 1N4153 1N4154 1N4305 1N4446 1N4447 diode in 4148 diode 1N4151 PDF

    1N4151f

    Abstract: 1N4152 ditty 1N4151 1N4153 1N4154 J103 1N4151-1N4152-1N4153-1N4154
    Text: 1775470 C O D I SEMICONDUCTOR IN C -L U ,-— TO 90D 0 0 5 7 9 D y_ — // DE | l 7 7 S 4 7 D □ □□□57ci 5 äliiä CODI Semiconductor, Inc. 1N 4151-1N 4152-1N 4153-1N 4154 HIGH SPEED DIODES • SILICON PLANAR EPITAXIAL D O -35 OUTLINE • C .4 p F MAX


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    l77S47D 1N4151-1N4152-1N4153-1N4154 1-800-232-CQDI 7033il 1N4151f 1N4152 ditty 1N4151 1N4153 1N4154 J103 1N4151-1N4152-1N4153-1N4154 PDF

    1n4153

    Abstract: fdll4153 1N4151 equivalent 1n41s 1N4152 fdll4152
    Text: FAIRCHILD SEMICONDUCTOR : S4 D F | 3 4 h T b 7 M D0274fiT 5 3469674 F A IR CH IL D S E M I C O N D U C T O R 84D 27489 D— 1N/FDLL4151/4152 1N/FDLL4153/4154 FAIRCHILD A Schlumberger Company High Speed Diodes T-c,%-V\ PACKAGES • C . . .4 pF MAX • t r r . . .2 nS (MAX) @ 10 m A, - 6 V, 1 00 SI


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    D0274fiT 1N/FDLL4151/4152 1N/FDLL4153/4154 1N4154 1N4153) 1N4152 1N41S1J 1n4153 fdll4153 1N4151 equivalent 1n41s 1N4152 fdll4152 PDF

    1N4152

    Abstract: 41S21
    Text: TYPES 1N4151 THRU 1N4154 SILICON SWITCHING DIODES BU LL ET IN NO. DL-S 699270, O CTOBER 1 9 6 6 -R E V IS E D AU G U ST 1969 F A S T S W IT C H IN G D IO D E S • Rugged Double-Plug Construction Electrical Equivalents 1N4151 . . 1N3604 1N4152 . . 1IM3605 . . . 1N4533


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    1N4151 1N4154 1N4151 1N3604 1N4152 1IM3605 1N4533 1N4153 1N3606 1N4534 1N4152 41S21 PDF

    g2ns

    Abstract: BAW75
    Text: BAW75 S iliz iu m -P la n a r-Log ik-D iode B A W 7 5 ist eine Silizium-Diode in „Double-Heat-Sink"-Technik im Glasgehäuse 56 A2 DIN 41883 D O —35 . Die Kathode ist durch einen roten Farbring gekennzeichnet. B A W 7 5 eignet sich besonders zum Einsatz als schnelle Schaltdiode in Rechenmaschinen, sowie für


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    BAW75 BAW75 Q62702-A396 -26min 26min 77max. g2ns PDF

    Untitled

    Abstract: No abstract text available
    Text: Surface Mount Devices NATL Computer Diodes continued Surface Mount Diodes LEADLESS GLASS PACKAGE BV (V) Min FDLL4151 LL-34 75 FDLL 4152 LL-34 40 Vr V Vf (V) Max 50 50 1.0 50 C PF Max trr ns Max Test Cond. Proc. Family 50 4.0 2.0 (Note 2) D4 30 0.8B 20 SeelN4152


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    FDLL4151 FDLL4153 FDLL4305 LL-34 LL-34 SeelN4152 SeeIN4152 PDF

    in4152

    Abstract: IR D4-D4
    Text: This Computer Diodes continued Surface Mount Diodes LEADLESS G LA SS PACKAGE BV (V) Min FDLL4151 LL-34 75 FDLL 4152 LL-34 40 Its Manufacturer C PF Max trr ns Max Test Cond. Proc. Family 50 4.0 2.0 (Note 2) D4 30 0.8B 20 SeelN4152 4.0 2.0 (Note 2) D4 50 0.88


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    T-03-01 in4152 IR D4-D4 PDF

    1n4153

    Abstract: DSAIH0002540
    Text: / □BE D I 1 1 ? 3 B K C INTERNATIONAL QQDGSÛ5 T | ~ 7 -0 3 -Ô 1 HIGH SPEED DIODES 1N4151 1N4153 1N4152 1N4154 ABSOLUTE MAXIMUM RATINGS • T_ • C 2.0 ns @ 10 mA, -6V, 100Î2 4 pF .0 2 0 * D IR Storage Temperature Range Maximum Junction Operating Temperature


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    1N4151 1N4153 1N4152 1N4154 DO-35 1N4154 1N4153, 1n4153 DSAIH0002540 PDF

    D1N4154

    Abstract: 1N4154 ITT DIODE itt 1501
    Text: I T T SEHICOND/ INTERISTA 50E D • 4 b ñ a ? l l 0 0 02 0 1 3 134 ■ IS I - T - c fS -o ^ 1N4154 Silicon Epitaxial Planar Diode fast switching diode. This diode is also available in glass case DO-34 ¡ m ax.1.9^ m a x .1.9 Hr *O I a E C a tho de Cathode


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    1N4154 DO-34 DO-35 DO-35) D1N4154 1N4154 ITT DIODE itt 1501 PDF

    Untitled

    Abstract: No abstract text available
    Text: SWITCHING DIODES, GLASS PACKAGE Cent rmou* Forward Capacitance Reverse Rev Peak Voltage C Recovery Package ts i Dissipation Voltage Ctrl rent Drop Maximum Time Quantities Part P. fmW V, Volts) 1. ("A ) V, (Volta) V, (Volts) 1. {mAj Number (PF> T,. (nS) Hulkmeel


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    1N4149 MMBD4201 BD1202 BD1283 BD1204 MMBD4448 OT-23 PDF

    itt diodes

    Abstract: ITT 914 4148 itt itt 1501 ITT2003 ITT700 ITT777 itt diodes 125
    Text: Silicon Diodes Silicon Planar Diodes in “ d o u ble-plug” D O -35 and DO-7 g la ss en ca p su la tio n s Type M axim u m R a tin g s C h a ra c te ris tic s at Tamb = 2 5 C Si fa m b 25°C DO-7 DO-35 Vr V Vrm V lo mA @ @ T a mb = ca Je ^ 25 °C P tot


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    DO-35 100i2 DO-35 itt diodes ITT 914 4148 itt itt 1501 ITT2003 ITT700 ITT777 itt diodes 125 PDF

    MLL5523B-1

    Abstract: JANTX1N6318US JANTXV1N6317 SP6317 SP6318US
    Text: Zener Regulator Diodes Micmsemi . Part Number ZEN 1 MLL4624 MLL4624-1 1N6317 1N6317US JAN1N6317 JAN1N6317US JANTX1N6317 JANTX1N6317US JANTXV1N6317 JANTXV1N6317US SP6317 SP6317US 1N5231A 1N5231A D 07 1N5231B 1N5231B (D07J MLL5231B MLL5231B-1 MLL5523B MLL5523B-1


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    ZEN-46 MLL5523B-1 JANTX1N6318US JANTXV1N6317 SP6317 SP6318US PDF

    BAV54-30

    Abstract: 1N4148F BAV54-70 35P4 BAV54 1n4152f 4148f BAY68 BAV54-100 BAW 43
    Text: Silicon signal diodes * High speed switching Diodes de signa! au silicium Type - Case V B oitier V *0 Im A) v(Vp) / / max max max r V rm T a m b 2 5 °C Commutation rapide ' «F (m A ) IR ,/ V r ( n A ) / (V ) 'R / v R <mA ) / (V ) C t rr if D R S 75 tp F)


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    Tamb25Â Tamb150Â ESM523 BAV54-30 1N4148F BAV54-70 35P4 BAV54 1n4152f 4148f BAY68 BAV54-100 BAW 43 PDF

    BAX84

    Abstract: 4531-2 esm 4148 1N3731 1N4149 1N4152 1N662 1N916 BAW75 BAW76
    Text: silicon signal diodes diodes de signal au silicium 1H0MS0N-CSF Type •o v r -v r m Vf / if Ir / Vr |r i Vr c / *IT «F Case Tamb150°C max m A max (V) max (V) high speed switching (mA) max <nA) (V) max t*A ) (V) max max (pF) (ns) (mA) commutation rapide


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    Tamb150Â 1N662 1N916 BAW75 BAW76 BAX84 SFD43 CB-104) 34/CB-104) CB-127 4531-2 esm 4148 1N3731 1N4149 1N4152 PDF

    1n4148 D035

    Abstract: 1N4532 1N4148 1N4149 1N4151 1N4152 1N914 1N914A 1N914B 1N916
    Text: SILICON SIGNAL DIODES 100 MA TYPES Part Number 1N 914 1N 914A 1N 9 1 4 B BV @ 100/1A Min. V I r @ 25°C Max. (ri A) @ V r (V) V f Max. (V) @ I f (m A) Co @ DV (pf) trr (77S E C ) Package Outline Package Outline Num ber 100 100 25 30 1.00 10 4 25 20 1.00


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    100/1A 1N914 1N914A 1N914B 1N916 1N916A 1N916B 1N4148* 1N4149 1N4151 1n4148 D035 1N4532 1N4148 1N4152 PDF

    Untitled

    Abstract: No abstract text available
    Text: american power devices 0737135 MELF PACKAGED 0000032 1 PLANAR SWITCHING DIODES A Fenwal Electronics, Inc. Company A MERI CAN POWER DEVICES 53E T -0 Z -Ò Ì D PLANAR SWITCHING DIODES: A summary \. -¿W V'S'; V.Y These devices are used to switch currents on and off at high speed.


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    DO-35 PDF