sekisui 5760
Abstract: sis950 SiS chipset 486 SEAGATE st51080n Bt848KPF KSV884T4A1A-07 lad1 5vdc SiS chipset SiS301 kingmax usb flash drive
Text: SiS540 Super 7 2D/3D Ultra-AGPTM Single Chipset Content Figure .vi Table. vii
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SiS540
sekisui 5760
sis950
SiS chipset 486
SEAGATE st51080n
Bt848KPF
KSV884T4A1A-07
lad1 5vdc
SiS chipset
SiS301
kingmax usb flash drive
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Untitled
Abstract: No abstract text available
Text: Preliminary KMM466S824CT2_ 144pin SDRAM SODIMM KMM466S824CT2 SDRAM SODIMM 8Mx64 SDRAM SODIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD FEATURE GENERAL DESCRIPTION T he Sam sung K M M 466S 824C T2 is a 8M bit x 64 S ynchronous
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KMM466S824CT2_
144pin
KMM466S824CT2
8Mx64
4Mx16,
466S824CT2
466S824CT2-
100MHz
400mil
144-pin
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Untitled
Abstract: No abstract text available
Text: KM416S4030B Preliminary CMOS SDRAM Revision History Revision ,l November 1997 •tRDL has changed 10ns to 12ns. •Binning -10 does not meet PC 100 characteristics . So AC parameter/Characteristics have changed to 64M 2nd values. REV. 1 Nov. '97 ELECTRONICS
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KM416S4030B
16Bit
416S4030B
10/AP
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Untitled
Abstract: No abstract text available
Text: KMM366S824BTL PC66 SDRAM MODULE Revision History Revision .3 March 1998 •S o m e P a ra m e te r v a lu e s & C h a ra cte ristics o f com p , level are c h a n g e d as be lo w : - Input le aka ge cu rre n ts (Inputs) :± 5 u A to ± 1 u A . - Input le aka ge cu rre n ts (I/O) :± 5 u A to ± 1 ,5uA.
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KMM366S824BTL
416S4030BT
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Untitled
Abstract: No abstract text available
Text: Preliminary PC 100 SDRAM MODULE KMM366S824BT KMM366S824BT SDRAM DIMM 8Mx64 SDRAM DIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Sam sung KM M 366S 824B T is a 8M bit x 64 Synchronous : Perform ance range
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KMM366S824BT
KMM366S824BT
8Mx64
4Mx16,
400mil
168-pin
416S4030BT
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Untitled
Abstract: No abstract text available
Text: Preliminary Intel 1.0 SDRAM MODULE KMM366S424BTL_ Revision History Revision .l November 1997 This spec has changed in accordance with New Binning [s F ' ELECTROftSSCS - 1 - REV. 1 Nov. '97 Preliminary Intel 1.0 SDRAM MODULE KMM366S424BTL KMM366S424BTL SDRAM DIMM
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KMM366S424BTL_
KMM366S424BTL
KMM366S424BTL
366S424BTL
400mil
168-pin
54Max)
416S4030BT
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Untitled
Abstract: No abstract text available
Text: Preliminary KMM466S424CT_ 144pin SDRAM SODIMM KMM466S424CT SDRAM SODIMM 4Mx64 SDRAM SODIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Sam sung KM M 466S 424C T is a 4M bit x 64 Synchronous
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KMM466S424CT_
144pin
KMM466S424CT
4Mx64
4Mx16,
144-pin
M466S424CT
416S4030BT
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Untitled
Abstract: No abstract text available
Text: KM416S4030B CMOS SDRAM 1M x 16Bitx 4 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION • • • • The KM416S4030B is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG’S high performance CMOS
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KM416S4030B
16Bitx
KM416S4030B
10/AP
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Untitled
Abstract: No abstract text available
Text: Preliminary KMM466S424CT_ 144pin SDRAM SODIMM KMM466S424CT SDRAM SODIMM 4Mx64 SDRAM SODIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Sam sung KM M 466S 424C T is a 4M bit x 64 Synchronous
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KMM466S424CT_
144pin
KMM466S424CT
4Mx64
4Mx16,
144-pin
M466S424CT
416S4030BT
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