Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC bME D • 7^4142 DD131S7 524 B S H 6 K 41C4000AL CMOS DRAM 4 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung KM 41C4000AL is a high speed CMOS 4 ,1 9 4 ,3 0 4 bit X 1 Dynamic Random Access Memory.
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DD131S7
KM41C4000AL
41C4000AL
41C4000AL-
130ns
150ns
100ns
180ns
200ns
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Untitled
Abstract: No abstract text available
Text: CMOS DRAM 41C4000AL 4 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 4 1 C 4 0 0 0 A L is a high speed CMOS 4 ,1 9 4 ,3 0 4 bit X 1 Dynamic Random A ccess M em ory. Its design is optimized for high perform ance applications
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KM41C4000AL
4000AL-
20-LEAD
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Untitled
Abstract: No abstract text available
Text: CMOS DRAM 41C4000AL 4 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 4 1 C 4 0 0 0 A L is a high speed CMOS 4 ,1 9 4 ,3 0 4 bit X 1 Dynamic Random A ccess M em ory Its design is optimized for high perform ance applications
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KM41C4000AL
130ns
4000AL-
150ns
100ns
180ns
18-LEAD
20-LEAD
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NG9-2
Abstract: No abstract text available
Text: 41C4000AL CMOS DRAM 4 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 41C 4000A L is a high speed CMOS 4 ,1 9 4 ,3 0 4 bit X 1 Dynamic Random Access Memory. Its design is optimized for high performance applications
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KM41C4000AL
41C4000AL
18-LEAD
20-LEAD
NG9-2
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Untitled
Abstract: No abstract text available
Text: 41C4000AL CMOS DRAM 4 M X 1 Bit C M O S Dynamic R AM with Fast Page M ode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 4 1 C 4 0 0 0 A L is a high speed CMOS 4 ,1 9 4 ,3 0 4 bit X 1 Dynam ic Random A cce ss Memory. Its design is optimized for high perform ance applications
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KM41C4000AL
18-LEAD
20-LEAD
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41C464
Abstract: 41C258 41C1000 44C256C
Text: TABLE OF CONTENTS I. FUNCTION GUIDE 1. 2. 3. 4. Product G u id e.
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KM41C256
KM424C256
424C256A.
KM424C257
KM428C128
428C256.
41C464
41C258
41C1000
44C256C
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Untitled
Abstract: No abstract text available
Text: CMOS DRAM 41C4000AL 4 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung K M 4 1 C 4 0 0 0 A L is a high speed CMOS 4 ,1 9 4 ,3 0 4 bit X 1 Dynam ic Random A ccess Memory. Its design is optimized for high perform ance applications
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OCR Scan
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KM41C4000AL
18-LEAD
20-LEAD
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