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    41C16000 Search Results

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    41C16000 Price and Stock

    Samsung Semiconductor KM41C16000BK-6

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    41C16000 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    41C16000 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    41C16000 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NEC D2732

    Abstract: 41C1000 41256 81c4256 6264 SRAM 44256 dram NEC 2732 nec 4217400 814400 Texas Instruments eprom 2732
    Text: New Page 1 DRAM ORGANIZATION/ DENSITY FUJISTU GOLDSTAR HITACHI HYNDAI MB GM HM HY 256K x 1 256K 81256 71C256 51256 MICRON MT 53C256 1256 MITSUBISHI M5M 4256 1M x 1(1M) 81C1000 71C1000 511000 531000 4C1024 41000 256K x 4(1M) 81C4256 71C4256 514256 534256 4C4256


    Original     		PDF 71C256 53C256 81C1000 71C1000 4C1024 81C4256 71C4256 4C4256 71C4400 4C4001 NEC D2732 41C1000 41256 6264 SRAM 44256 dram NEC 2732 nec 4217400 814400 Texas Instruments eprom 2732

    41C16000

    Abstract: No abstract text available
    Text: 41C16000 CMOS DRAM 16 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung K M 41C 16000 is a high speed CMOS 1 6 ,7 7 7 ,2 1 6 X 1 Dynamic Random Access Memory. Its design is optimized for high performance applications


    OCR Scan     		PDF KM41C16000 130ns 150ns 10OfxF 24-LEAD 41C16000

    41C16000

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC L.7 E D • KMM5Ô16000/T 7 «it.4 m S 001522^ 32S » S M 6K DRAM MODULES 16Mx8 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5816000/T is a 16M b itx 8 Dynamic RAM high density memory module. The Samsung


    OCR Scan     		PDF 16000/T 16Mx8 KMM5816000/T 5816000/T 41C16000/T 24-pin 30-pin KMM5816000-6 110ns KMM5816000-7 41C16000

    KM41C16000A

    Abstract: No abstract text available
    Text: 41C16000A/AL/ALL/ASL CMOS DRAM 16M x 1 Bit C M O S Dynamic R A M with Fast Page M ode FEATURES GENERAL DESCRIPTION • Performance range: tRA C tC A C tnc 41C16000A/AL/ALL/ASL-5 50ns 13ns 90ns 41C16000A/AL/ALI7ASL-6 60ns 15ns 110ns 41C16000A/AL/ALL/ASL-7


    OCR Scan     		PDF KM41C16000A/AL/ALL/ASL 110ns 130ns 150ns 41C16000A 41C16000A/AL/ALL7ASL 6000A/AL/ALL/ASL 24-LEAD 300MIL, KM41C16000A

    41C16100

    Abstract: 24-PIN 41C16000
    Text: MEMORY ICs D yn am ic R A M Capacity Continued Part Number 16M i FUNCTION GUIDE Organization Speed(ns) Features Technology Packages Remark * KM418V256ALLT 256K X 1B 70/80 CMOS Fast Page(3.3V) 40 Pin TSOP-ll(Forward) Now * KM418V256ALLTR 256K X 18 70/80 CMOS


    OCR Scan     		PDF KM418V256ALLT KM418V256ALLTR KM416C157AJ KM416C157AZ KM416C157AT KM416C157ATR 416C157ALZ KM416C157ALT KM416C157ALTR KM416C157ALLZ 41C16100 24-PIN 41C16000

    Q022B

    Abstract: No abstract text available
    Text: DRAM MODULE KMM53616000AKG KMM53616000AK Fast Page Mode 16Mx36 DRAM SIMM, 4K Refresh, using 64M DRAM with 400 mil G EN ER AL DESCR IPTIO N FEATURES The Samsung KMM53616000AK is a 16M bit x 36 Dynamic RAM high density memory module. The • Part Identification


    OCR Scan     		PDF KMM53616000AKG KMM53616000AK 16Mx36 16Mx4bit 32-pin 16Mx1bit 24-pin 72-pin Q022B

    irp 540

    Abstract: No abstract text available
    Text: DRAM MODULE 16 Mega Byte KMM5916000A/AT Fast Page Mode 16Mx9 DRAM SIMM , 4K Refresh , 5V Using 16M DRAM with 400 mil Package G E N E R A L DESC RIPTIO N The Samsung KMM5916000A is a 16M bit x 9 FEATURES • Performance Range: Dynamic RAM high density memory module. The


    OCR Scan     		PDF KMM5916000A/AT 16Mx9 KMM5916000A 16Mx1bit 24-pin 30-pin irp 540

    1004CL

    Abstract: KM48V2104B KM44V16104AK KM416V256BL 4M DRAM EDO KM48V2100B 44v16104 1mx1 DRAM DIP
    Text: CMOS DRAM General Information 2. Product Guide D e iifty m » iJ P P N M I>1SS:<?p7ÍRRk3^ 1M bit 1Mx1 5V±10% KM41C1000D# 256Kx4 5V±10% KM44C256D# 128Kx8 5V±10% KM48C128# 60/70/80 Fast Page P:18 Pin DIP 1Mx1 60/70/80 Fast Page J:20 Pin SOJ 55/60/70 Fast Page


    OCR Scan     		PDF KM41C1000D# KM41C1000D-L# 256Kx4) 256Kx4 KM44C256D# KM44C256D-L# 128Kx8 KM48C128# KM48C128 KM48C124# 1004CL KM48V2104B KM44V16104AK KM416V256BL 4M DRAM EDO KM48V2100B 44v16104 1mx1 DRAM DIP

    41C464

    Abstract: 41C1000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100
    Text: MEM ORY ICs CRO SS REFERENCE GUIDE 3. C R O SS REFERENCE GUIDE 3.1 DRAM Density 25 6 K Org. X 1 X 4 1M X 1 X 4 4M X 1 X 4 x8 16M M ode Sa m su n g F. Page KM 41C256 TC 51256 N ibble KM 41C257 TC 51257 S. C o lu m n KM 41C258 TC 51258 H M 51 258 MB81258 F. Page


    OCR Scan     		PDF 41C256 41C257 41C258 41C464 41C466 41C1000 41C1002 44C256 44C258 41C4000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100

    Untitled

    Abstract: No abstract text available
    Text: 41C16000C, KM41V16000C CMOS DRAM 16M x1 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a fam ily of 16,777,216 x 1 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time (-5 or -6), power consum ption(Norm al or Low power) and


    OCR Scan     		PDF KM41C16000C, KM41V16000C 16Mx1 300mil

    KMCJ532512

    Abstract: KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL
    Text: FUNCTION GUIDE MEMORY ICs 1. 1.1 INTRODUCTION Dynamic RAM KM41C1000C-6 1Mx1 KM41C1000CL-6 KM41C1000CSL-6 25 6Kx4 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 4Mbit— 4Mx1 T KM41C4000C-5 — KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KM41C4000CL-5 KM41C4000CL-6 KM41C4000CL-7


    OCR Scan     		PDF KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 KM41C4000C-5 KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KMCJ532512 KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL

    41C464

    Abstract: 41C258 41C1000 44C256C
    Text: TABLE OF CONTENTS I. FUNCTION GUIDE 1. 2. 3. 4. Product G u id e.


    OCR Scan     		PDF KM41C256 KM424C256 424C256A. KM424C257 KM428C128 428C256. 41C464 41C258 41C1000 44C256C

    Untitled

    Abstract: No abstract text available
    Text: b?E J> • SAMSUNG ELECTRONICS INC 7 ^ 4 1 4 2 Dülfc.023 T32 « S U C K 41C16000 CMOS DRAM 16 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode GENERAL DESCRIPTION FEATURES • Perform ance range: KM 41C 16000-6 • • • • • • • • • • tRAC


    OCR Scan     		PDF KM41C16000 130ns 150ns 24-LEAD

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM53216000AKG KMM53216000AKG Fast Page Mode 16Mx32 DRAM SIMM, 4K Refresh using 64M DRAM with 400mil G EN ER AL DESCRIPTIO N FEATURES The Samsung KMM53216000AKG is a 16M bit x 32 • Part Identification Dynamic RAM high density memory module. The


    OCR Scan     		PDF KMM53216000AKG KMM53216000AKG 16Mx32 400mil 16Mx4bit 32-pin 72-pin

    41C16000

    Abstract: 41C16000-6 AEE16 KM41C16000-6
    Text: 41C16000 CMOS DRAM 16 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung K M 41C 16000 is a high speed CMOS 1 6 ,7 7 7 ,2 1 6 X 1 Dynamic Random Access Memory. Its design is optimized for high performance applications


    OCR Scan     		PDF KM41C16000 41C16 24-LEAD 41C16000 41C16000-6 AEE16 KM41C16000-6