Untitled
Abstract: No abstract text available
Text: DRAM MODULES KMM584000A 4 M X 8 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 584000A is a 4M bit X 8 Dynamic RAM high density memory module. The Samsung KM M 584000A consist of eight KM 41C4000AJ DRAMs in 20-pin SOJ package mounted on a 30-pin glass-epoxy
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KMM584000A
84000A
41C4000AJ
20-pin
30-pin
130ns
84000A-
150ns
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC bME D • 7^4142 DD131S7 524 B S H 6 K 41C4000AL CMOS DRAM 4 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung KM 41C4000AL is a high speed CMOS 4 ,1 9 4 ,3 0 4 bit X 1 Dynamic Random Access Memory.
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DD131S7
KM41C4000AL
41C4000AL
41C4000AL-
130ns
150ns
100ns
180ns
200ns
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Untitled
Abstract: No abstract text available
Text: 41C4000ASL CMOS DRAM 4 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • The Samsung KM 41C4000ASL is a high speed CMOS 4,1 9 4 ,3 0 4 bit X 1 Dynamic Random Access Memory. Its design is optimized for high performance applications
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KM41C4000ASL
41C4000ASL
130ns
41C4000ASL-
150ns
41C40OOASL-10
100ns
180ns
20-LEAD
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MT28F400B3WG-8 tcp 41c
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b4E D • 7 ^ 4 1 4 2 0013140 220 »SnfiK KM 41C4000A CMOS DRAM 4 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 41C 4000A is a high speed CMOS 4 ,1 9 4 ,3 0 4 bit X 1 Dynamic Random Access Memory.
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41C4000A
130ns
100ns
180ns
KM41C4000A
Q0131SS
18-LEAD
20-LEAD
001315b
MT28F400B3WG-8 tcp 41c
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Untitled
Abstract: No abstract text available
Text: DRAM MODULES KMM584000A 4 M X 8 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION The Samsung KM M 584000A is a 4M bit X 8 Dynamic RAM high density memory module. The Samsung KM M 584000A consist of eight KM 41C4000AJ DRAMs in 20-pin SOJ package mounted on a 30-pin glass-epoxy
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KMM584000A
84000A-
84000A-10
100ns
130ns
150ns
180ns
84000A
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594000A
Abstract: No abstract text available
Text: KMM594000A DRAM MODULES 4 M X 9 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 594000A is a 4M bit X 9 Dynamic RAM high density memory module. The Samsung KM M 594000A consist of nine KM 41C4000AJ DRAMs in 20-pin SOJ package mounted on a 30-pin glass-epoxy
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KMM594000A
94000A
41C4000AJ
20-pin
30-pin
94000A-
594000A
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Untitled
Abstract: No abstract text available
Text: 41C4000ASL CMOS DRAM 4 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • The Samsung KM 41C4000ASL is a high speed CMOS 4 ,1 9 4 ,3 0 4 bit X 1 Dynamic Random Access Memory. Its design is optimized for high performance applications
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KM41C4000ASL
41C4000ASL
KM41C4000ASL
18-LEAD
20-LEAD
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Untitled
Abstract: No abstract text available
Text: CMOS DRAM 41C4000AL 4 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 4 1 C 4 0 0 0 A L is a high speed CMOS 4 ,1 9 4 ,3 0 4 bit X 1 Dynamic Random A ccess M em ory. Its design is optimized for high perform ance applications
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KM41C4000AL
4000AL-
20-LEAD
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Untitled
Abstract: No abstract text available
Text: 41C4000ASL CMOS DRAM 4 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung K M 4 1C 4 0 0 0 A S L is a high speed CMOS 4 ,1 9 4 ,3 0 4 bit X 1 Dynam ic Random A cce ss Mem ory. Its design is optimized for high perform ance applications
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KM41C4000ASL
4000ASL-
41C4000ASL-
ASL-10
130ns
4000AS
18-LEAD
20-LEAD
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Untitled
Abstract: No abstract text available
Text: CMOS DRAM 41C4000AL 4 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 4 1 C 4 0 0 0 A L is a high speed CMOS 4 ,1 9 4 ,3 0 4 bit X 1 Dynamic Random A ccess M em ory Its design is optimized for high perform ance applications
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KM41C4000AL
130ns
4000AL-
150ns
100ns
180ns
18-LEAD
20-LEAD
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Untitled
Abstract: No abstract text available
Text: 41C4000A CMOS DRAM 4 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • The Samsung K M 4 1 C 4 0 0 0 A is a high speed CMOS 4 ,1 9 4 ,3 0 4 bit X 1 Dynamic Random A cce ss M em ory. Its design is optimized for high perform ance applications
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KM41C4000A
41C4000A-
130ns
150ns
100ns
18-LEAD
20-LEAD
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NG9-2
Abstract: No abstract text available
Text: 41C4000AL CMOS DRAM 4 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 41C 4000A L is a high speed CMOS 4 ,1 9 4 ,3 0 4 bit X 1 Dynamic Random Access Memory. Its design is optimized for high performance applications
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KM41C4000AL
41C4000AL
18-LEAD
20-LEAD
NG9-2
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELE CTRONICS INC b4E J> • 7 ^ 4 1 4 2 Q013174 b03 ■ 41C4000ASL CMOS DRAM 4 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 4 1 C 4 0 0 0 A S L is a high speed CMOS 4 ,1 9 4 ,3 0 4 bit X 1 Dynam ic Random A ccess M em ory.
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Q013174
KM41C4000ASL
130ns
4000ASL-
150ns
180ns
20-LEAD
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Untitled
Abstract: No abstract text available
Text: 41C4000A CMOS DRAM 4 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • The Samsung K M 4 1 C 4 0 0 0 A is a high speed CMOS 4 ,1 9 4 ,3 0 4 bit X 1 Dynam ic Random A ccess M em ory. Its design is optimized for high perform ance applications
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KM41C4000A
130ns
41C4000A-
100ns
20-LEAD
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AE12A
Abstract: No abstract text available
Text: 41C4000A CMOS DRAM 4 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 4 1 C 4 0 0 0 A is a high speed CMOS 4 ,1 9 4 ,3 0 4 bit X 1 Dynamic Random A cce ss M em ory. Its design is optimized for high perform ance applications
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KM41C4000A
18-LEAD
20-LEAD
AE12A
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KMM584000A7
Abstract: No abstract text available
Text: KMM584000A DRAM MODULES 4 M X 8 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: tR A C tC A C tRC 70ns 20ns 130ns KM M 584000A- 8 80ns 20ns 150ns K M M 584000A -10 100ns 25ns 180ns KM M 584000A- 7 • • • • • • •
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KMM584000A
84000A-
84000A
100ns
130ns
150ns
180ns
KMM584000A7
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KM41C4000ASL-10
Abstract: No abstract text available
Text: 41C4000ASL CMOS DRAM 4 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 4 1 C 4 0 0 0 A S L is a high speed CMOS 4 ,1 9 4 ,3 0 4 bit X 1 Dynamic Random A cce ss M em ory. Its design is optimized for high perform ance applications
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KM41C4000ASL
130ns
150ns
180ns
4000AS
18-LEAD
20-LEAD
KM41C4000ASL-10
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Untitled
Abstract: No abstract text available
Text: 41C4000AL CMOS DRAM 4 M X 1 Bit C M O S Dynamic R AM with Fast Page M ode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 4 1 C 4 0 0 0 A L is a high speed CMOS 4 ,1 9 4 ,3 0 4 bit X 1 Dynam ic Random A cce ss Memory. Its design is optimized for high perform ance applications
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KM41C4000AL
18-LEAD
20-LEAD
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Untitled
Abstract: No abstract text available
Text: 41C4000ASL CMOS DRAM 4 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • The Samsung K M 4 1 C 4 0 0 0 A S L is a high speed CMOS 4,1 9 4 ,3 0 4 bit X 1 Dynamic Random A cce ss M em ory. Its design is optimized for high perform ance applications
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KM41C4000ASL
4000ASL-
130ns
180ns
18-LEAD
20-LEAD
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km41c4000a
Abstract: a38ag 41C4000A
Text: 41C4000A CMOS DRAM 4 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung K M 41C 4000A is a high speed CMOS 4 ,1 9 4 ,3 0 4 bit X 1 Dynamic Random Access Memory. Its design is optimized for high performance applications
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KM41C4000A
18-LEAD
20-LEAD
km41c4000a
a38ag
41C4000A
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41C464
Abstract: 41C258 41C1000 44C256C
Text: TABLE OF CONTENTS I. FUNCTION GUIDE 1. 2. 3. 4. Product G u id e.
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KM41C256
KM424C256
424C256A.
KM424C257
KM428C128
428C256.
41C464
41C258
41C1000
44C256C
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KM41C1000BJ
Abstract: KM44C256BP KM41C1000BP KM41C1001BP KM41C256P KM44C256BJ km4164 KM41C256J KM44C1000LJ KM41C464Z
Text: FUNCTION GUIDE MEMORY ICs 2. PRODUCT GUIDE 2.1 Dynamic RAM Part Num ber Capacity 64K b it KM4164BP 256 K b it KM41C256P I [ I Technology Features Packages R em ark 100/120/150 NM OS Page M ode 16 Pin DIP 70/80/100 70/80/100 70/80/100 70/80/100 Fast Page Fast Page
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KM4164BP
KM41C256P
KM41C256J
KM41C256Z
KM41C257P
KM41C257J
KM41C257Z
KM41C258P
KM41C258J
KM41C258Z
KM41C1000BJ
KM44C256BP
KM41C1000BP
KM41C1001BP
KM44C256BJ
km4164
KM44C1000LJ
KM41C464Z
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KM41C4000A-8
Abstract: KM41C4000A-10 KM41C4000A-7 km41c4000a
Text: 41C4000A CMOS DRAM 4 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 4 1 C 4 0 0 0 A is a high speed CMOS 4 ,1 9 4 ,3 0 4 bit X 1 Dynam ic Random A cce ss M em ory. Its design is optimized for high perform ance applications
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KM41C4000A
18-LEAD
20-LEAD
KM41C4000A-8
KM41C4000A-10
KM41C4000A-7
km41c4000a
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Untitled
Abstract: No abstract text available
Text: CMOS DRAM 41C4000AL 4 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung K M 4 1 C 4 0 0 0 A L is a high speed CMOS 4 ,1 9 4 ,3 0 4 bit X 1 Dynam ic Random A ccess Memory. Its design is optimized for high perform ance applications
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KM41C4000AL
18-LEAD
20-LEAD
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