Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    429 TRANSISTOR Search Results

    429 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    429 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    schematic diagram circuit 48V controller

    Abstract: opto transistor schematic diagram 48V telecom OPTO ISOLATOR opto mosfet LT4250 LT4250H HOT SWAP TRANSISTOR SUBSTITUTION 48v mosfet switch
    Text: QUICK START GUIDE FOR DEMONSTRATION CIRCUIT 429 NEGATIVE 48V HOT SWAP CONTROLLER LT4250 DESCRIPTION Demonstration circuit 429 is a Hot Swap controller designed for dual – 48V battery feeds in telecom subsystems. This demo board is optimized for 2A maximum operating current,


    Original     		PDF LT4250 LT4250 LT4250) schematic diagram circuit 48V controller opto transistor schematic diagram 48V telecom OPTO ISOLATOR opto mosfet LT4250H HOT SWAP TRANSISTOR SUBSTITUTION 48v mosfet switch

    HS-3182

    Abstract: 5962-86879013A 5962-8687901EA HS1-3182-8 HS1-3182-9 HS-3282 HS4-3182-8 MIL-STD-1835 CQCC1-N28
    Text: HS-3182 Data Sheet June 5, 2007 ARINC 429 Bus Interface Line Driver Circuit FN2963.2 Features The HS-3182 is a monolithic dielectrically isolated bipolar differential line driver designed to meet the specifications of ARINC 429. This Device is intended to be used with a


    Original     		PDF HS-3182 FN2963 HS-3182 HS-3282 HS-3182. 5962-86879013A 5962-8687901EA HS1-3182-8 HS1-3182-9 HS4-3182-8 MIL-STD-1835 CQCC1-N28

    HS-3282

    Abstract: HS-3182 HS3282 5962-86879013A 5962-8687901EA HS1-3182-8 HS1-3182-9 HS4-3182-8 CB12C-A hs131
    Text: HS-3182 Data Sheet May 30, 2008 ARINC 429 Bus Interface Line Driver Circuit FN2963.3 Features The HS-3182 is a monolithic dielectric ally isolated bipolar differential line driver designed to meet the specifications of ARINC 429. This device is intended to be used with a


    Original     		PDF HS-3182 FN2963 HS-3182 HS-3282 HS-3182. HS3282 5962-86879013A 5962-8687901EA HS1-3182-8 HS1-3182-9 HS4-3182-8 CB12C-A hs131

    Untitled

    Abstract: No abstract text available
    Text: HS-3182 Data Sheet May 30, 2008 ARINC 429 Bus Interface Line Driver Circuit FN2963.3 Features The HS-3182 is a monolithic dielectric ally isolated bipolar differential line driver designed to meet the specifications of ARINC 429. This device is intended to be used with a


    Original     		PDF HS-3182 FN2963 HS-3182 HS-3282 HS-3182.

    HS-3182

    Abstract: HS 3182 HS 3282 HS1-3182-9 HS-3282 HS4-3182-8 5962-86879013A 5962-8687901EA HS1-3182-8 smd transistor HS4
    Text: HS-3182 ARINC 429 Bus Interface Line Driver Circuit March 1997 Features Description • TTL and CMOS Compatible Inputs The HS-3182 is a monolithic dielectrically isolated bipolar differential line driver designed to meet the specifications of ARINC 429. This Device is intended to be used with a companion chip,


    Original     		PDF HS-3182 HS-3182 HS-3282 HS 3182 HS 3282 HS1-3182-9 HS4-3182-8 5962-86879013A 5962-8687901EA HS1-3182-8 smd transistor HS4

    HS 3282

    Abstract: HS-3282 HS-3182 5962-86879013A 5962-8687901EA HS1-3182-8 HS1-3182-9 HS4-3182-8
    Text: HS-3182 TM ARINC 429 Bus Interface Line Driver Circuit March 1997 Features Description • TTL and CMOS Compatible Inputs The HS-3182 is a monolithic dielectrically isolated bipolar differential line driver designed to meet the specifications of ARINC 429. This Device is intended to be used with a companion chip,


    Original     		PDF HS-3182 HS-3182 HS-3282 125oC. 500pF, 25kHz HS 3282 5962-86879013A 5962-8687901EA HS1-3182-8 HS1-3182-9 HS4-3182-8

    speed control of dc motor using ujt scr

    Abstract: JV1F-24V JV1F-48V LR26550 JV1-100V JV1-12V JV1-18V JV1-24V JV1-48V JV1F-12V
    Text: JV JV-RELAYS FLAT TYPE POWER RELAY 22 .866 UL File No.: E43028 CSA File No.: LR26550 16 .630 10.9 .429 • Flat type: 16 mm length x 22 mm (width) × 10.9 mm (height) (.630 × .866 × .429 inch) • High capacity type (16A) available • High sensitivity type (100 mW: 1 Form A) available


    Original     		PDF E43028 LR26550 speed control of dc motor using ujt scr JV1F-24V JV1F-48V LR26550 JV1-100V JV1-12V JV1-18V JV1-24V JV1-48V JV1F-12V

    TPS54140EVM-429

    Abstract: HPA429 MSS1048-223MLB
    Text: User's Guide SLVU285 – March 2009 TPS54140EVM-429 1.5-A, SWIFT Regulator Evaluation Module 1 2 3 4 Contents Introduction . 2 Test Setup and Results . 3


    Original     		PDF SLVU285 TPS54140EVM-429 HPA429 MSS1048-223MLB

    IBT200-201

    Abstract: International Power Sources IBT200-200 IBT200-201-3 IBT200-202 IBT200-300 IBT200-301 IBT200-302 IBT200-400 IBT200-401
    Text: HIGH DENSITY DC/DC Converters International Power Sources, Inc. 260 Hopping Brook Road Holliston, Massachusetts 01746 Tel. 508 429-4440 Fax (800) 226-2100 http://www.intlpower.com IBT Series: 200 & 400 Watts FEATURES • Patented Flat Transformer Technology


    Original     		PDF 700Khrs MIL-HDBK-217E) IBT200-200 IBT200-201 IBT200-201-3 IBT200-202 IBT200. IBT200-201 International Power Sources IBT200-200 IBT200-201-3 IBT200-202 IBT200-300 IBT200-301 IBT200-302 IBT200-400 IBT200-401

    VEGA450

    Abstract: optocoupler MTBF calculation magnetic-amplifier VEGA650 KT-AC-88537 109R0614E402 VEGA 650 Lambda VEGA Lambda VEGA 650 molex 2pin connector
    Text: Applications Manual Vega Series Power Supply 3055 Del Sol Blvd. San Diego, CA 92154 Phone: 619 575-4400 Fax: (619) 429-1011 Rev: Date: A3 October 2003 Vega Customer Applications Manual Table of Contents Table of Contents . 2


    Original     		PDF

    sas smd transistor

    Abstract: SMD Transistor SAs A08 smd transistor RX1L TS68K TS68C429A TS68C429AVR TS68C429AVRA marking code 933 SMD Transistor 68C429A
    Text: TS68C429A CMOS ARINC 429 Multichannel Receiver/Transmitter MRT Datasheet Features • • • • • • • • • • • • • • • • • • Eight Independent Receivers (Rx) Three Independent Transmitters (Tx) Full TS68K Family Microprocessor Interface Compatibility


    Original     		PDF TS68C429A TS68K 16-bit 0848D sas smd transistor SMD Transistor SAs A08 smd transistor RX1L TS68C429A TS68C429AVR TS68C429AVRA marking code 933 SMD Transistor 68C429A

    inverter 1000watt

    Abstract: lambda ultraflex 1000w inverter circuit diagram 1000watt dc to ac power inverter 12v dc 240v ac 1000W inverter ULTRAFLEX ULTRAFLEX 600W make inverter 1000watt 1000W inverter circuit design 600w power supply unit
    Text: INSTALLATION MANUAL ULTRAFLEX POWER SUPPLY UF2500 Series 3055 Del Sol Blvd. San Diego, CA 92154 Phone: 619 575-4400 Fax: (619) 429-1011 P/N: IMUG2500 Rev. B DATE:February 2002 TABLE OF CONTENTS INTRODUCTION 4 CERTIFICATION 4 WARRANTY 4 APPLICABILITY 4 PART NUMBER CONFIGURATION


    Original     		PDF UF2500 IMUG2500 10/4A 50/48W 120/48W 120/45W 240VA) inverter 1000watt lambda ultraflex 1000w inverter circuit diagram 1000watt dc to ac power inverter 12v dc 240v ac 1000W inverter ULTRAFLEX ULTRAFLEX 600W make inverter 1000watt 1000W inverter circuit design 600w power supply unit

    TS68C429A

    Abstract: microprocessor SMD Transistor SAs sas smd transistor TS68C429AMFBCA TS68C429AVFA ARINC 710 transistor bc 547 smd BC 547 transistor ATMEL ARINC
    Text: TS68C429A CMOS ARINC 429 Multichannel Receiver/Transmitter MRT Datasheet Features • • • • • • • • • • • • • • • • • • Eight Independent Receivers (Rx) Three Independent Transmitters (Tx) Full TS68K Family Microprocessor Interface Compatibility


    Original     		PDF TS68C429A TS68K 16-bit F-91572 0848E TS68C429A microprocessor SMD Transistor SAs sas smd transistor TS68C429AMFBCA TS68C429AVFA ARINC 710 transistor bc 547 smd BC 547 transistor ATMEL ARINC

    2sc 103 transistor

    Abstract: transistor BD 430
    Text: SSC » • Ô23SL.GS 0G0M3SS 5 « S I E G ^f’ 33^D>S NPN Silicon Planar Transistor BD 429 SIEMENS AKTIENGESELLSCHAF ¡C 04355 0 - BD 429 is an epitaxial NPN silicon planar transistor in a plastic package similar to TO 202. Together with its complementary transistor BD 430 it is particularly suitable for use in


    OCR Scan     		PDF Q62702-D1069 -T-33-OS fl23SbQS BD429 2sc 103 transistor transistor BD 430

    ir 429c

    Abstract: No abstract text available
    Text: Semiconductor, Inc. TC429 6A SINGLE HIGH-SPEED, CMOS POWER MOSFET DRIVER FEATURES GENERAL DESCRIPTION • ■ ■ ■ The T C 429 is a high-speed, single C M O S -level tran sla ­ to r and driver. D esigned specifically to drive highly ca p a ci­ tive pow er M O S FE T gates, the TC 429 features 2.5£2 output


    OCR Scan     		PDF TC429 75nsec 35nsec 2500pF speTC429 ir 429c

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 2SA1429 2 S A 1 429 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS. PO W ER SWITCHING APPLICATIONS. • • • SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm 7.1 MAX Low Collector Saturation Voltage : VcE(sat) = -0.5V (Max.) (IC = - 1A)


    OCR Scan     		PDF 2SA1429 2SC3669. 2-7D101A

    2-7D101A

    Abstract: 2SA1429 2SC3669
    Text: TO SH IBA 2SA1429 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. • SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 429 7.1 MAX 3.8 32 Low Collector Saturation Voltage : VCE(sat)“ —0.5V (Max.) (1^= -1 A ) — J". . •


    OCR Scan     		PDF 2SA1429 2SC3669. 2-7D101A 2SA1429 2SC3669

    Untitled

    Abstract: No abstract text available
    Text: HS-3182 Semiconductor ARINC 429 Bus Interface Line Driver Circuit March 1997 Description Features TTL and CMOS Compatible Inputs The HS-3182 is a monolithic dielectrically isolated bipolar differ­ ential line driver designed to meet the specifications of ARINC


    OCR Scan     		PDF HS-3182 HS-3182 HS-3282 500pF, 25kHz

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SA1429 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS. PO W ER SWITCHING APPLICATIONS. SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 429 Unit in mm • Low Collector Saturation Voltage : VCE(sat) = -0 .5 V (Max.) (IC = - 1A) • High Speed Switching Time : tgtg = l.O/^s (Typ.)


    OCR Scan     		PDF 2SA1429 2SC3669. 2-7D101A

    11 watt cfl circuit diagram of 12 volts

    Abstract: hs3282 arnic 600 9 watt cfl circuit diagram harris hs3182 hs1-3182-5 Harris Semiconductor 3182-5
    Text: HS-3182 H RH ARRIS SEMICONDUCTOR ARNIC 429 Bus Interface Line Driver Circuit January 1992 Features Description • TTL and CMOS Compatible Inputs The HS-3182 is a monolithic dielectrically isolated bipolar differential line driver designed to meet the specifications of


    OCR Scan     		PDF HS-3182 HS-3182 HS-3282 HS-3182. 500pF, 25kHz 11 watt cfl circuit diagram of 12 volts hs3282 arnic 600 9 watt cfl circuit diagram harris hs3182 hs1-3182-5 Harris Semiconductor 3182-5

    2-7D101A

    Abstract: 2SA1429 2SC3669
    Text: 2SA1429 TOSHIBA 2 S A 1 429 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS. PO W ER SWITCHING APPLICATIONS. • • • SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm 7.1 MAX Low Collector Saturation Voltage : v CE(sat)= -0 .5 V (Max.) (l£ = -1A )


    OCR Scan     		PDF 2SA1429 2SC3669. 2-7D101A 2SA1429 2SC3669

    GFB7400D

    Abstract: FEY101B TCA290A Rifa pmr 2026 EF184 ORP52 Mullard Mullard quick reference guide GZF1200 ITT A2610 YD 6409
    Text: AN INTRODUCTION TO: Cartwright ELECTRONIC COMPONENTS 517 LAWMOOR STREET DIXONS BLAZES INDUSTRIAL ESTATE GLASGOW G5 041-429 7771 Cartwright Electronic Components started trading in April, 1971 as the electronics division of John T. Cartwright & Sons ERD North Ltd . From very modest


    OCR Scan     		PDF

    2-7D101A

    Abstract: 2SA1429 2SC3669
    Text: 2SA1429 TO S H IB A 2 S A 1 429 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS. PO W ER SWITCHING APPLICATIONS. • • • SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm 7.1 MAX Low Collector Saturation Voltage : VCE(sat)= -0 .5 V (Max.) (IC = -1 A )


    OCR Scan     		PDF 2SA1429 2SC3669. 2-7D101A 2SA1429 2SC3669

    2-7D101A

    Abstract: 2SA1429 2SC3669
    Text: 2SA1429 TO SH IBA 2 S A 1 429 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm POWER SWITCHING APPLICATIONS 7.1 M A X 2 .7 M A X • • • 1.0 Low Collector Saturation Voltage : v CE(sat)= -0 .5 V (Max.) (1^= -1A )


    OCR Scan     		PDF 2SA1429 2SC3669. 2-7D101A 2SA1429 2SC3669