marking 03s
Abstract: No abstract text available
Text: Advance Information FDN7603S N-Channel PowerTrench SyncFETTM 30 V, 4.8 A, 43 m: Features General Description Max rDS on = 43 m: at VGS = 10 V, ID = 4.8 A The FDN7603S has been designed to minimize losses in power conversion application. Advancements in both silicon and
|
Original
|
PDF
|
FDN7603S
FDN7603S
marking 03s
|
114-18063
Abstract: mass air flow sensor pbt-gf30 pbt-GF15 PBT - GF15 connector AMP PBT gf30 connector tyco pbt gf15 komax kappa 220 komax kappa 220 manual AMP PBT - GF15 3 pin Tyco PA66 GF15
Text: MQS-Umschlag 08.03.2005 13:43 Uhr Seite 1 Catalog 1307999 Issued 3-05 G L O B A L AU TO M OT I V E D I V I S I O N Micro Quadlok Interconnection System MQS-Umschlag 08.03.2005 13:43 Uhr Seite 2 TYCO ELECTRONICS G L O B A L AU TO M OT I V E D I V I S I O N
|
Original
|
PDF
|
|
HC4353
Abstract: C4351
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MC54/74HC4351 M C54/74HC4352 M C54/74HC4353 Advance Information Analog M ultiplexers/ Dem ultiplexers w ith Address Latch High-Performance Silicon-Gate CM O S N SUFFIX PLASTIC CASE 738-03 The M C 54/74H C 43 51, M C 54/74H C 43 52, and M C 54/74H C 43 53 utilize silicon-gate
|
OCR Scan
|
PDF
|
54/74H
C54/74H
C4351
C4352*
C4353
HC4351
HC4353
C4351
|
transistor a2160
Abstract: transistor A1270 A1270 transistor transistor 2sD 4515 1431T transistor transistor A769 mn15151 mini circuits 15542 A1270 Y AN 5606K
Text: Type Number List • Integrated Circuits MOS LSIs M O S L S Is Page Type No, M N 5117 M N171605 32,42 AM N18P83221 43 M N 3671A 62 M N 5126 87 43 M N 3672 62 M N 5128 87 37 ,4 4,45 46 M N 1256 46 M N 1258 46 M N 1259 46 M N12861 46 M N 12862 46 M N 187124
|
OCR Scan
|
PDF
|
N12861
N13801
MN1381
N13811
N13821
N150402
15P0802
N150412
MN15151
MN152121
transistor a2160
transistor A1270
A1270 transistor
transistor 2sD 4515
1431T transistor
transistor A769
mini circuits 15542
A1270 Y
AN 5606K
|
3866S
Abstract: transistor a999 bs 7818 -1995 transistor tt 2206 A999 transistor TT 2206 transistor a1535A 8340UAS transistor 3866S 2SD 4515
Text: H Integrated Circuits MOS LSIs Page MOS LSI Type No. Page Type No. Page Type No. Page Type No. Page M N 171608 42 A M N 18P73210 43 M N 3210 69 M N 5179/H 91 M N 171609 42 AM N 18P73215 43 M N 3214 69 MN5181 91 M N 3102 69 M N 53 00 0 Series 55 M N 33 00 Series
|
OCR Scan
|
PDF
|
1020G
N12861
N12B62
MN1381
MN13811
MN13821
15P0802
15P5402
58851A
70803A
3866S
transistor a999
bs 7818 -1995
transistor tt 2206
A999 transistor
TT 2206 transistor
a1535A
8340UAS
transistor 3866S
2SD 4515
|
AN3962FB
Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
Text: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030
|
OCR Scan
|
PDF
|
MN101C01C
MN101C01D
MN101C025
MN1020003
MN1020004A
MN1020004AFB
MN1020012A
MN1020
12AFA
MN1020015
AN3962FB
MN1880023
mn19412
MN1874033
IC AN7135
an3814k
MN1883214
an8294nsb
mn4117405
mn171202
|
BAT53
Abstract: BAT 43 Schottky Diodes VF 579 D81 marking MARKING D82 BA579C a3020 BA 30 C Thomson-CSF diodes BAR43C
Text: ^ schottky diodes diodes schottky th o m so n -csf Types N N BAT BAT BAR BAR BAR 17 53 18 42 43 N BAR 43 A Characteristics at 25 ° C Maxim um ratings @ Vr Vp C @ •F Vr m 'F |r V (mA) max (uA) (V) min max (V) 4 10 70 30 30 30 30 30 100 100 0,25 0,1 0,2
|
OCR Scan
|
PDF
|
1000MHz
120ps
100ps@
BAT53
BAT 43 Schottky Diodes
VF 579
D81 marking
MARKING D82
BA579C
a3020
BA 30 C
Thomson-CSF diodes
BAR43C
|
IGBT DRIVE 50V 300A
Abstract: ID126030 igbt modulo 01-2603-0 znr vfm
Text: POlüEREX INC 3TE T> WÊ TETM bíl m iUR£X Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex, Europe, S.A. 428 Avenue G. Durand, BP107,72003 Le Mans, France (43) 41.14.14 0004Û.43 3 JBPRX- - ID126030 ‘ Dual IGBTMOD P o W B t M o d u lB
|
OCR Scan
|
PDF
|
BP107,
Amperes/600
ID126030
iPRrr-39-
300Amperes/600Volts
IGBT DRIVE 50V 300A
igbt modulo
01-2603-0
znr vfm
|
18 BZX
Abstract: zener BZX diode Lz zener BZX ZENER BZX44 BZX -2V5 bzx45 diode bzx BZX43 bzx 43
Text: BZX 43 BZX 44 BZX 45 SILICON PLANAR DIODES VOLTAGE REFERENCE DIODES The B Z X 43, B Z X 4 4 and B Z X 45 s ilico n planar diodes are te m p e ra tu re com pensated refe rence elem ents in T O -18 tw o pins m etal case. These device have e xce p tio n a l p e rfo rm a n ce
|
OCR Scan
|
PDF
|
O--18
BZX44
10ave
18 BZX
zener BZX
diode Lz zener
BZX ZENER
BZX -2V5
bzx45
diode bzx
BZX43
bzx 43
|
600PIV
Abstract: "Schematic Diagrams" 400PIV 1200PIV
Text: c a y a o C O M P M A N POWER MODULES Y nr •«- -2 50 in 63 60 m m - — -1 90 in (43 26 m m )- r 25A-42.5A SCR/DIODE CIRCUITS ► ^ “ U* m | _ I vi i f s Part Number Identification 1 st Digit Series Type 2nd Digit Current
|
OCR Scan
|
PDF
|
C3Y30M
5A-42
600PIV
"Schematic Diagrams"
400PIV
1200PIV
|
BP107
Abstract: R5CP1617CZ R5CQ1617CZ R62P2520CF R62P2520CZ R67P2515CF R67P2515CZ R72P1605WF R72P1605WZ R7SP1606WF
Text: 3TE POIilEREX INC D • 75TMb21 GDDSDSS S M P R X ^ mNBŒX Powerex, Inc., Hlllis Street, Youngwood, Pennsylvania 15697 412 925-7272 Poweret Europe, S.A., 428 Avenue G. Durand, BP107,72003 Le Mans, France (43) 41.14.14 GTO DIODE 2 ■ r r m @ Vr r m Type
|
OCR Scan
|
PDF
|
7BTMb21
BP107
R5CP1617CZ
R5CQ1617CZ
R67P2515CZ
R67P2515CF
R62P2520CZ
R62P2520CF
R72P1605WZ
R72P1605WF
R7SP1606WF
|
BAY41
Abstract: tu 104 BAY42 BAY43
Text: BAY 41 BAY 42 BAY 43 S iliziu m -P lan ar-S ch aitd io d en Die Silizium-Planar-Dioden B A Y 41, B A Y 42 und B A Y 43 im Glasgehäuse 51 A2 DIN 41 880 D O -7 , eignen sich zum Einsatz als schnelle Schaltdioden bei mittleren Strömen. Die Kathode ist durch einen Farbring gekennzeichnet.
|
OCR Scan
|
PDF
|
BAY41,
BAY42
BAY43
BAY41
Q60201-Y41
Q60201-Y42
Q60201-Y43
tu 104
|
Untitled
Abstract: No abstract text available
Text: Optoisolator Specifications 4N39, 4N40 Optoisolator GaAs Infrared Emitting Diode and Light Activated SCR M IN M AX. 2 ao 1 a m p ere 6 volts 0fc.5 012 9 53 3 43 6 86 2 92 6 10 m illiw a tts m illiam p s 090 2 16 305 ; .203 2 54 INFRARED EM ITTING DIODE M AX.
|
OCR Scan
|
PDF
|
220VAC
|
D4353
Abstract: TC74HC43 TC74HC135
Text: V TC74HC4351AP/AF / TC74HC4352AP/AF TC74HC4353AP/AF TC74H C43 51A P/AF TC 74H C 43 52A P/AF TC 74H C 43 53A P/AF 8-CHANNEL ANALOG M U L T I P L E X E R / D E M U L T I P L E X E R WITH ADDRESS LATCH D U A L 4-CH ANNEL ANALOG M U L T I P L E X E R / D E M U L T I P L E X E R WITH ADDRESS LATCH
|
OCR Scan
|
PDF
|
TC74HC4351AP/AF
TC74HC4352AP/AF
TC74HC4353AP/AF
TC74H
TC74HC4351A,
TC7-1HC4351
4352AP/AF
4353AP/AF-8
D4353
TC74HC43
TC74HC135
|
|
ME400803
Abstract: powerex ME40
Text: POWEREX INC m u m 1SE D 72T4fa21 D0D33S1 T T -J 3 -0 7 ME400403 ME400803 e x Powerex, Inc., HHUs Street, Youngwood, Pennsylvanla 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107,72003 Le Mans, France (43) 72.75.15 Three-Phase Diode Bridge Modules
|
OCR Scan
|
PDF
|
72T4fa21
D0D33S1
ME400403
ME400803
Amperes/400-800
BP107
ME400403,
GGG3354
powerex ME40
|
150a gto
Abstract: R60S2515ES 150a gto 2000v BP107 R60F2515ES GTO thyristors R60e gto 1600v 150A GTO 2000 V R60s diode
Text: m ti4 E D • 7E T4b21 OOÜ5fl34 MTì M P R X R60S2515ES R60F2515ES Powerex, Inc., 200 Hlllis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 Fast Recovery Diode
|
OCR Scan
|
PDF
|
00D5fl34
R60S2515ES
R60F2515ES
BP107,
Amperes/2500
R60F2515ES
150a gto
150a gto 2000v
BP107
GTO thyristors
R60e
gto 1600v
150A GTO 2000 V
R60s diode
|
GFM 74 A
Abstract: No abstract text available
Text: POQJEREX m Ê / ISE INC B W D m 7 5 ^ 5 1 00Q3SM3 & U CE420430 CE420830 K Powerex, Inc., Hlllls Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 72.75.15 Three-Phase SCR/Diode
|
OCR Scan
|
PDF
|
00Q3SM3
CE420430
CE420830
BP107,
Amperes/400-800
CE420430,
CE420830
BP107
GFM 74 A
|
ked2
Abstract: No abstract text available
Text: POIilEREX INC m M U iE K 31E J> • TE^MbSl b W M PRX DGQM3bb KED235A1 - Powerex, Inc., Hlllls Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 .
|
OCR Scan
|
PDF
|
KED235A1
BP107,
Amperes/500
ked2
|
1000Amperes
Abstract: DIODE 6AT
Text: P 0 ÜJEREX m a I NC m D a • TSTMbSl _ Powerex, Inc., Hlllis Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 D0ÜM771 M HPRX ID221KA2 * T -31-31
|
OCR Scan
|
PDF
|
00GM771
ID221KA2
BP107,
Amperes/1000
ID221KA2
22Max.
1000Amperes
DIODE 6AT
|
diode a7
Abstract: A7 DIODE ME3012A7 TJ3 diode bridge me3006a7 ME3012 powerex ME30
Text: POWEREX INC 15E D • TETHbBl 00033^1 G ■ fCMEREX M E30 Powerex, Inc., M ills Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003LeMans, France (43) 72.75.15 7 A7 Three-Phase Diode Bridge Module 75 Amperes/600-1600 Volts
|
OCR Scan
|
PDF
|
BP107,
72003LeMans,
Amperes/600-1600
i4b21
0G33c
BP107
diode a7
A7 DIODE
ME3012A7
TJ3 diode bridge
me3006a7
ME3012
powerex ME30
|
Untitled
Abstract: No abstract text available
Text: 3TE POIilEREX I NC m N B Œ D • 75TMb21 GDDSDSS S M P R X ^ n, -p - 0/ - vc X Powerex, Inc., Hlllis Street, Youngwood, Pennsylvania 15697 412 925-7272 Poweret Europe, S.A., 428 Avenue G. Durand, BP107,72003 Le Mans, France (43) 41.14.14 GTO DIODE 2 Type
|
OCR Scan
|
PDF
|
75TMb21
BP107
R5CP1617CZ
R5CQ1617CZ
R67P2515CZ
R67P2515CF
R62P2520CZ
|
CS412499
Abstract: CS411499 2 SA 673 semiconductor T T 2190 powerex pow-r-blok BP107 CS410499 CS410699 SA 673 semiconductor pow-r-blok
Text: POUEREX INC m / m 1SE D a ?5TMbai 0003245 0 x CS41 Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 72.75.15 99 Single Diode POW-R-BLOK Module 100 Amperes/400-2400 Volts
|
OCR Scan
|
PDF
|
BP107,
Amperes/400-2400
CS412499
CS411499
2 SA 673 semiconductor
T T 2190
powerex pow-r-blok
BP107
CS410499
CS410699
SA 673 semiconductor
pow-r-blok
|
powerex aa 2700
Abstract: IET21205
Text: POWEREX INC m M a^E D B R E X • 7S=14b21 DG04Ô63 H M P R X Powerex, Inc., Hlllis Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14
|
OCR Scan
|
PDF
|
14b21
IET21205
BP107,
Amperes/1200
BP107
IET21205
powerex aa 2700
|
Untitled
Abstract: No abstract text available
Text: • 0000732 n s ■ CDIÎIL BAT54A; C; S SCHOTTKY BARRIER DIODES BAT54A dual diodes, common anode BAT54C dual diodes, common cathode and BAT54S dual diodes, in series Marking PACKAGE O UTLIN E DETAILS ALL DIM EN SION S IN m m BAT54A - 42 BAT54C - 43 BAT54S - 44
|
OCR Scan
|
PDF
|
BAT54A;
BAT54A
BAT54C
BAT54S
BAT54A
BAT54C
BAT54S
|