4312 020 36642 Search Results

4312 020 36642 Result Highlights (5)

Part	Manufacturer	Description
MC4312F	Rochester Electronics LLC	MC4312F - 4-Bit Shift Register
4312RV-245XGLD	Coilcraft Inc	General Purpose Inductor, 2380uH, 2%, 1 Element, SMD, 4514, ROHS COMPLIANT
4312RV-245XGLB	Coilcraft Inc	General Purpose Inductor, 2380uH, 2%, 1 Element, SMD, 4514, ROHS COMPLIANT
4312RV-404XGLB	Coilcraft Inc	General Purpose Inductor, 400uH, 2%, 1 Element, SMD, 4514, ROHS COMPLIANT
4312RV-725X	Coilcraft Inc	RFID transponder coil, SMT, RoHS

4312 020 36642 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: i i N AHER P H I L IPS/DISCRETE b^E D bbS3T31 A 003^023 7TA BLV37 IAPX VHF PUSH-PULL POWER TRANSISTOR Push-pull npn silicon planar epitaxial transistor prim arily intended fo r use in VH F broadcast transmitters. Features • Internally matched input fo r wideband operation and high power gain	OCR Scan	bbS3T31 BLV37	PDF
Untitled Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE bbS3T31 DDBflflRO LQ3 I APX b'lE D l BLU99 BLU99/SL U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the u.h.f. band. The transistor is also very suitable for application in the 900 MHz mobile radio band.	OCR Scan	bbS3T31 BLU99 BLU99/SL OT122A) BLU99/SL OT122D)	PDF
itt 2222 Abstract: tag l9 transistor 2222 030 capacitor philips ITT 2222 A 4312 020 36642 Philips 2222 capacitor electrolytic capacitor 47 capacitor j63 c9 38478 philips ceramic capacitors Text: PhHip^emiconductor^^^ _ bbSBIBl 003G12b TD7 H AP X ^Pjoduc^pecjficatjon UHF power MOS transistor ^ BLF544 N AMER P H I L I P S / D I S C R E T E bTE D PIN CONFIGURATION FEATURES • High power gain • Easy power control • Good thermal stability / • Gold metallization ensures	OCR Scan	003G12b BLF544 OT171 MCA836 itt 2222 tag l9 transistor 2222 030 capacitor philips ITT 2222 A 4312 020 36642 Philips 2222 capacitor electrolytic capacitor 47 capacitor j63 c9 38478 philips ceramic capacitors	PDF
Untitled Abstract: No abstract text available Text: N AtfER PHJLIPS/DISCRETE APX bbS3^31 D03TD32 b47 b'lE ]> BLV38 A VHF LINEAR PUSH-PULL POW ER TRANSISTOR Push-pull npn silicon planar epitaxial transistor prim arily intended fo r use in linear VH F television transmitters vision or sound amplifiers . Features	OCR Scan	D03TD32 BLV38	PDF
Philips 4312 020 Abstract: BLV25 Philips 2222 ferrite fxc3b fxc3b PHILIPS 4312 blw 64 rf transistor PHILIPS 4312 amplifier philips rf choke ferrite 151 schematic for 88 to 108 amplifier Text: APPLICATION NOTE Wideband 300 W push-pull FM amplifier using BLV25 transistors AN98031 Philips Semiconductors Wideband 300 W push-pull FM amplifier using BLV25 transistors CONTENTS 1 INTRODUCTION 2 AMPLIFIER DESIGN THEORY 2.1 2.2 2.3 The output network The input network	Original	BLV25 AN98031 BLV25 BLW86 SCA57 Philips 4312 020 Philips 2222 ferrite fxc3b fxc3b PHILIPS 4312 blw 64 rf transistor PHILIPS 4312 amplifier philips rf choke ferrite 151 schematic for 88 to 108 amplifier	PDF
Untitled Abstract: No abstract text available Text: Philips Semiconductors ^53= 131 0030 1 2 b TO? • APX ^roductspecjfjcat^ UHF power MOS transistor BLF544 N AUER PHILIPS/DISCRETE FEATURES b'iE D PIN CONFIGURATION • High power gain • Easy power control • Good thermal stability / • Gold metallization ensures	OCR Scan	BLF544 OT171	PDF
BLV38 Abstract: 4312 020 36642 transistor bd 346 class A push pull power amplifier PHILIPS 4312 amplifier sot179 Text: PHILIPS INTERNATIONAL bS E D • 711GÔ5ti DDt.2R2R Jl 557 ■ BLV38 VHF LINEAR PUSH-PULL POWER TRANSISTOR Push-pull npn silicon planar epitaxial transistor prim arily intended fo r use In linear V H F television transmitters vision o r sound amplifiers .	OCR Scan	711Gfl5ti BLV38 711002t. 0b2c13fl BLV38 4312 020 36642 transistor bd 346 class A push pull power amplifier PHILIPS 4312 amplifier sot179	PDF
4312 020 36642 Abstract: BLV37 transistor tt 2222 9t2 transistor ca212 TT 2222 npn transistor 4312 Text: PHILIPS INTERNATIONAL bSE ]> • 711002b OObS'in 3dfl « P H I N BLV37 A VHF PUSH-PULL POWER TRANSISTOR Push-pull npn silicon planar epitaxial transistor prim arily intended fo r use in V H F broadcast transmitters. Features • Internally matched input fo r wideband operation and high power gain	OCR Scan	711002b BLV37 OT179 711Da2b 4312 020 36642 BLV37 transistor tt 2222 9t2 transistor ca212 TT 2222 npn transistor 4312	PDF
4312 020 36642 Abstract: transistor tt 2222 philips Fxc 3 b TRANSISTOR BO 346 ic LM 356 mml 600 BLV38 Text: N AMER PHILIPS/DISCRETE b'ìE J> • IAPX bbS3T31 OGi^GaE b47 BLV38 A VHF LINEAR PUSH-PULL POWER TRANSISTOR Push-pull npn silicon planar epitaxial transistor prim arily intended fo r use in linear VHF television transmitters vision or sound amplifiers . Features	OCR Scan	bbS3T31 BLV38 bbS3131 4312 020 36642 transistor tt 2222 philips Fxc 3 b TRANSISTOR BO 346 ic LM 356 mml 600 BLV38	PDF
transistor tt 2222 Abstract: TT 2222 npn TRIMMER capacitor 5-60 pF TT 2222 ic TT 2222 BLU99 4312 020 36642 Text: bSE T> 711002b GGti27fi7 0^7 « P H I N BLU99 BLU99/SL PHILIPS INTERNATIONAL U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor prim arily intended fo r use in m obile radio transm itters in the u.h.f. band. The transistor is also very suitable fo r application in the 900 MHz m obile radio band.	OCR Scan	711002b GGb27fi7 BLU99 BLU99/SL OT122A) BLU99/SL OT122D) transistor tt 2222 TT 2222 npn TRIMMER capacitor 5-60 pF TT 2222 ic TT 2222 4312 020 36642	PDF
Philips 2222 capacitor Abstract: philips capacitor philips capacitor 2222 Text: Philips Semiconductors bbS 3^31 Q Q S T f i ? 1! T35 M A P X ^ P r o d u c ts p e c ific a tio n HF/VHF power MOS transistor ^ — BLF177 N AMER PHILIPS/DISCRETE b^E D PIN CONFIGURATION FEATURES • High power gain • Low intermodulation distortion • Easy power control	OCR Scan	BLF177 OT121 Philips 2222 capacitor philips capacitor philips capacitor 2222	PDF
BLF177 Abstract: philips ET-E 60 4312 020 36642 2222 030 capacitor philips MARKING H3B WCA244 Text: bbS3^31 GOSTfi?1! Philips Semiconductors H3B [A P X Product specification BLF177 HF/VHF power MOS transistor N AMER P H I L I P S / D I S C R E T E b'iE D PIN CONFIGURATION FEATURES • High power gain • Low intermodulation distortion • Easy power control	OCR Scan	BLF177 OT121 MBA379 philips ET-E 60 4312 020 36642 2222 030 capacitor philips MARKING H3B WCA244	PDF
MDA380 Abstract: 4312 020 36642 MDA385 BLU99 TRANSISTOR SL 100 "2222 352" Text: DISCRETE SEMICONDUCTORS DATA SHEET BLU99 BLU99/SL UHF power transistor Product specification March 1993 Philips Semiconductors Product specification BLU99 BLU99/SL UHF power transistor DESCRIPTION FEATURES N-P-N silicon planar epitaxial transistor primarily intended for use in	Original	BLU99 BLU99/SL BLU99 OT122A) BLU99/SL MDA380 4312 020 36642 MDA385 TRANSISTOR SL 100 "2222 352"	PDF
t07 transistor Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE bTE D APX bbS3T31 0028832 T07 BLU30/28 • UHF POWER TRANSISTOR NPN silicon planar epitaxial transistor primarily intended for use in radio transmitters in the 470 MHz communications band. Features • Multi-base structure and emitter ballasting resistors for an optimum temperature profile	OCR Scan	bbS3T31 BLU30/28 BLU30/28 OT119) t07 transistor	PDF

transistor A4t 85 Abstract: 3b5 transistor transistor A4t 45 transistor A4t Text: b5E D m VllDÔSb DQbSTBl 1T4 • PHIN PHILIPS INTERNATIONAL U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the 470 MHz communications band. Features: • multi-base structure and emitter-ballasting resistors for an optimum temperature profile	OCR Scan	BLU30/12 OT-119) 711GfiEti transistor A4t 85 3b5 transistor transistor A4t 45 transistor A4t	PDF
philips ferroxcube 4c6 Abstract: 78los transistor A2 BR 78L05 GS 78L05 78L05 BLF278 transistor c36 Text: _ Product Specification VHF push-pull power MOS transistor FEATURES BLF278 PINNING - SOT262A1 • High power gain • Easy power control • Good thermal stability • Gold metallization ensures excellent reliability. APPLICATIONS PIN SYMBOL 1 di 2	OCR Scan	BLF278 OT262A1 OT262A1 711002b OT262A1. 711DflBb D11G3D3 philips ferroxcube 4c6 78los transistor A2 BR 78L05 GS 78L05 78L05 BLF278 transistor c36	PDF
MCA45T Abstract: capacitor philips ll Text: bSE D ai 7110ñEb □ 0bE72cì 4^5 H PHIN PHILIPS INTERNATIONAL UHF POWER TRANSISTOR NPN silicon planar epitaxial transistor prim arily intended fo r use in radio transmitters in the 470 MHz communications band. Features • Multi-base structure and em itter ballasting resistors fo r an optim um temperature profile	OCR Scan	711002b BLU30/28 BLU30/28 OT119) 711Dfl5b 0Db2735 MCA45T capacitor philips ll	PDF
capacitor 104 PF disc Abstract: transistor T43 B52 transistor transistor d 1991 ar D 1991 AR apx 188 Transistor 5331 Text: N AMER PHI LIPS/DISCRETE bTE T> m bb53^B]> 0028832 TD7 • IAPX BLU30/28 J l UHF POWER TRANSISTOR NPN silicon planar epitaxial transistor prim arily intended fo r use in radio transmitters in the 470 MHz communications band. Features • Multi-base structure and em itter ballasting resistors fo r an optim um temperature profile	OCR Scan	BLU30/28 BLU30/28 OT119) capacitor 104 PF disc transistor T43 B52 transistor transistor d 1991 ar D 1991 AR apx 188 Transistor 5331	PDF
Untitled Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE b^E D • bbS3R31 0Q2flfl2M ^30 I IAPX bLUcJO/12 A U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the 470 M H z communications band. Features: • multi-base structure and emitter-ballasting resistors for an optimum temperature profile	OCR Scan	bbS3R31 bLUcJO/12 BLU30/12	PDF
BLF177 Abstract: SOT121 Package 727 Transistor power values 2222 122 capacitor philips transistor marking code HF MGP100 2222 632 series capacitor 2222 852 47103 Text: DISCRETE SEMICONDUCTORS DATA SHEET BLF177 HF/VHF power MOS transistor Product specification File under Discrete Semiconductors, SC08a September 1992 Philips Semiconductors Product specification HF/VHF power MOS transistor FEATURES BLF177 PIN CONFIGURATION	Original	BLF177 SC08a MBB072 MLA876 OT121 BLF177 SOT121 Package 727 Transistor power values 2222 122 capacitor philips transistor marking code HF MGP100 2222 632 series capacitor 2222 852 47103	PDF
transistor tt 2222 Abstract: philips resistor 2322-153 TT 2222 BLF177 TRIMMER cap no-2222 809 07015 71005 philips resistor 2322 Text: Philips Components blr77 _ A _ DEVELOPMENT DATA This data s h e e t co n ta in s advance in fo rm a tio n and sp e c ific a tio n s w h ic h are s u b je c t to change w ith o u t n o tic e . RF POWER MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor intended fo r use in professional transmitters	OCR Scan	OT-121 transistor tt 2222 philips resistor 2322-153 TT 2222 BLF177 TRIMMER cap no-2222 809 07015 71005 philips resistor 2322	PDF
Untitled Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE bTE D • ^53*131 DDETlfl^ 40fl BLV99 APX N-P-N silicon planar epitaxial transistor primarily intended for use as a driver-stage in base stations in the 900 MHz communications band. Features: • emitter-ballasting resistors for an optimum temperature profile	OCR Scan	BLV99 OT172A1) OT172A1. bbS3T31 7Z94683 7Z94684 7Z94685 960MHz;	PDF
Voltage regulator 78L05 Abstract: BLF278 78los philips ferroxcube 4c6 4C6 toroid 2222 809 09006 capacitor film dielectric trimmer PTFE 100pf 78L05 transistor bc 245 capacitor 17 ij k 63 MKT Text: P hilips Sem iconductors ^ 53^31 003002A TM • APX Product specification VHF push-pull power MOS transistor BLF278 AMER P H I L I P S / D I S C R E T E PIN CONFIGURATION FEATU RES • • • • b'lE High power gain Easy power control Good thermal stability	OCR Scan	BLF278 OT262 MCA982 Voltage regulator 78L05 BLF278 78los philips ferroxcube 4c6 4C6 toroid 2222 809 09006 capacitor film dielectric trimmer PTFE 100pf 78L05 transistor bc 245 capacitor 17 ij k 63 MKT	PDF
Untitled Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE b 'lE b b S B 'm » DD2flfl7b E3^ BLU97 ; v U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor designed for use in mobile radio transmitters in the 470 MHz band. Features: • multi-base structure and emitter-ballasting resistors for an optimum temperature profile.	OCR Scan	BLU97 OT122A) bb53T31	PDF

4312 020 36642 Search Results

4312 020 36642 Result Highlights (5)

4312 020 36642 Datasheets Context Search

Untitled

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itt 2222

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Philips 4312 020

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BLV38

4312 020 36642

4312 020 36642

transistor tt 2222

Philips 2222 capacitor

BLF177

MDA380

t07 transistor

transistor A4t 85

philips ferroxcube 4c6

MCA45T

capacitor 104 PF disc

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BLF177

transistor tt 2222

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Voltage regulator 78L05

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