TBD438
Abstract: BD433 TBD436 TBD437 434 NPN transistors
Text: BD433, 434, 435, 436, 437, 438 Medium Power Transistors General Purpose TO-126 Features: • NPN Plastic Medium Power Silicon Transistors. • Intended for use in Medium Power Linear Switching Applications. TO-126 Plastic Package Dimensions Minimum Maximum
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BD433,
O-126
O-126
TBD433
TBD434
TBD438
BD433
TBD436
TBD437
434 NPN transistors
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BD436
Abstract: BD433 BD434 BD435 BD437 BD438 bd43
Text: BD433/5/7 BD434/6/8 COMPLEMENTARY SILICON POWER TRANSISTORS • ■ SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The BD433, BD435, and BD437 are silicon epitaxial-base NPN power transistors in Jedec SOT-32 plastic package, intented for use in
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BD433/5/7
BD434/6/8
BD433,
BD435,
BD437
OT-32
BD433
BD434,
BD436,
BD438
BD436
BD434
BD435
bd43
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434 NPN transistors
Abstract: BD435 transistor BD435 BD433 BD434 BD436 BD437 BD438 SGS-THOMSON 435
Text: BD433/5/7 BD434/6/8 COMPLEMENTARY SILICON POWER TRANSISTORS • ■ SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The BD433, BD435, and BD437 are silicon epitaxial-base NPN power transistors in Jedec SOT-32 plastic package, intented for use in
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BD433/5/7
BD434/6/8
BD433,
BD435,
BD437
OT-32
BD433
BD434,
BD436,
BD438
434 NPN transistors
BD435
transistor BD435
BD434
BD436
SGS-THOMSON 435
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Untitled
Abstract: No abstract text available
Text: BD433/5/7 BD434/6/8 COMPLEMENTARY SILICON POWER TRANSISTORS • ■ STMicroelectronics PREFERRED SALESTYPE COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The BD433, BD435, and BD437 are silicon epitaxial-base NPN power transistors in Jedec SOT-32 plastic package, intented for use in
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BD433/5/7
BD434/6/8
BD433,
BD435,
BD437
OT-32
BD433
BD434,
BD436,
BD438
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BD437
Abstract: 434 NPN transistors BD433 BD434 BD435 BD436 BD438 ic 438
Text: BD433/5/7 BD434/6/8 COMPLEMENTARY SILICON POWER TRANSISTORS n SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BD433, BD435, and BD437 are silicon epitaxial-base NPN power transistors in Jedec SOT-32 plastic package, intented for use in medium power linear and switching applications.
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BD433/5/7
BD434/6/8
BD433,
BD435,
BD437
OT-32
BD433
BD434,
BD436,
BD438
434 NPN transistors
BD434
BD435
BD436
ic 438
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BZX85C12V
Abstract: TOSHIBA 2N3055 bta41-600b application BTA41-600B firing circuit TAB 429 H toshiba BZX85C20V SCR tyn612 pin configuration picaxe TYN612 specification 2SA1085E
Text: SEMICONDUCTORS DISCRETE DEVICES Cathode Anode DO-15 DO-201AD 6.8 x 3.5mm 9.5 x 5.3mm Anode Cathode TO-220AC Fast recovery diodes page 427 Schottky power diodes page 428 Isolated tab triacs page 430 Anode 1 Gate Anode 2 Bridge rectifiers Current regulating diodes
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DO-15
DO-201AD
O-220AC
T0202-3
STGP3NB60HD*
STGP7NB60HD*
STGP3NB60HD
STGP7NB60HD
BZX85C12V
TOSHIBA 2N3055
bta41-600b application
BTA41-600B firing circuit
TAB 429 H toshiba
BZX85C20V
SCR tyn612 pin configuration
picaxe
TYN612 specification
2SA1085E
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Untitled
Abstract: No abstract text available
Text: 62 7 BFU590G NPN wideband silicon RF transistor Rev. 1 — 28 April 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, medium power applications in a plastic, 4-pin SOT223 package. The BFU590G is part of the BFU5 family of transistors, suitable for small signal to medium
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BFU590G
OT223
BFU590G
AEC-Q101
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Untitled
Abstract: No abstract text available
Text: 62 7 BFU590Q NPN wideband silicon RF transistor Rev. 1 — 28 April 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, medium power applications in a plastic, 3-pin SOT89 package. The BFU590Q is part of the BFU5 family of transistors, suitable for small signal to medium
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BFU590Q
BFU590Q
AEC-Q101
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Untitled
Abstract: No abstract text available
Text: 62 7 BFU590Q NPN wideband silicon RF transistor Rev. 1 — 28 April 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, medium power applications in a plastic, 3-pin SOT89 package. The BFU590Q is part of the BFU5 family of transistors, suitable for small signal to medium
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BFU590Q
BFU590Q
AEC-Q101
BFU590QX
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Untitled
Abstract: No abstract text available
Text: BFU520Y Dual NPN wideband silicon RF transistor Rev. 1 — 20 February 2014 Product data sheet 1. Product profile 1.1 General description Dual NPN silicon RF transistor for high speed, low noise applications in a plastic, 6-pin SOT363 package. The BFU520Y is part of the BFU5 family of transistors, suitable for small signal to medium
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BFU520Y
OT363
BFU520Y
AEC-Q101
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BFU590G
Abstract: No abstract text available
Text: 62 7 BFU590G NPN wideband silicon RF transistor Rev. 1 — 28 April 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, medium power applications in a plastic, 4-pin SOT223 package. The BFU590G is part of the BFU5 family of transistors, suitable for small signal to medium
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BFU590G
OT223
BFU590G
AEC-Q101
BFU590GX
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PTC6679
Abstract: No abstract text available
Text: j M I C R O S E ñ r C O R P/P O üj ER ' r~QB D Ë T j b ï ï S 1SO O DDO 434 3 3-/S- D PTC 6 6 7 9 PTC 6 6 8 0 PTC 6681 POWERMODE III S E R IE S HIGH VOLTAGE NPN TRANSISTORS 30 AMPERES 400 VOLTS FEA TU R ES • • • • High Voltage Rating : V cex = 400 Volts
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22j23J^
PTC6679
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SC08810
Abstract: B0435 d433 bd 149 D435 BD437-BD438 BD 435 d437 BD PNP
Text: SGS-THOMSON BD433/5/7 BD434/6/8 iy COMPLEMENTARY SILICON POWER TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES . COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The BD433, BD435, and BD437 are silicon epitaxial-base NPN power transistors in Jedec SOT-32 plastic package, intented for use in
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BD433/5/7
BD434/6/8
BD433,
BD435,
BD437
OT-32
BD433
BD434,
BD436,
BD438
SC08810
B0435
d433
bd 149
D435
BD437-BD438
BD 435
d437
BD PNP
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bo434
Abstract: b0436 TRANSISTOR BD 437 BD 434 transistor BD 141 BD436 DIN137 80442 transistor 438 Q62702-D202
Text: - ESC D • ÖS35L.05 000M3bfl 3 M S I E â 8236320 SIEMENS/ SPCL. SEMICONDS • r- j w ? BD 434 PNP Silicon Epibase Transistors BD 436 J6 8 D _ SIEMENS AKTIEN6ESELLSCHAF - BD 438 BD 440 BD 442 Pow er transistors for com plem entary A F stages
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00043bfl
BD434
BD440
BD442
BD441.
t25mn
434/BD
436/BD
023SbOS
G00437H
bo434
b0436
TRANSISTOR BD 437
BD 434
transistor BD 141
BD436
DIN137
80442
transistor 438
Q62702-D202
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Untitled
Abstract: No abstract text available
Text: r r 7 SGS-THOMSON Ä 7 # RaoeifäOlILIßra «! BD433/5/7 BD434/6/8 COMPLEMENTARY SILICON POWER TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES . COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The BD433, BD435, and BD437 are silicon epitaxial-base NPN power transistors in Jedec
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BD433/5/7
BD434/6/8
BD433,
BD435,
BD437
OT-32
BD433
BD434,
BD436,
BD438
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transistor d325
Abstract: TRANSISTOR BD 437 transistor BD 141 BD PNP 433 transistor d217 siemens BO 410 transistor BD transistor 433 Mhz d285
Text: ESC D • Ô235b05 QQ043b3 M H S I E â NPN Silicon Epibase Transistors i - k , ■? j - H ' SIEMENS AKTIENGESELLSCHAF BD 433 BD 435 BD 437 BD 439 BD 441 The transistors BD 433, BD 435, BD 437, BD 439, and BD 441 are NPN silicon epibase power transistors in TO 126 plastic package 12 A 3 DIN 41 869, sheet 4 . The collector
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053SbOS
00043L3
433/BD
435/BD
437/BD
439/BD
441/BD
fl23SfcÂ
---0436r
BD433.
transistor d325
TRANSISTOR BD 437
transistor BD 141
BD PNP
433 transistor
d217 siemens
BO 410
transistor BD
transistor 433 Mhz
d285
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BD NPN transistors
Abstract: BD 440 NPN transistors bdw 36 BD PNP BD 440 PNP transistors 434 NPN transistors BD 909 bd 911 BDw 32 LT 442
Text: POWER TRANSISTORS continued > < > > m o _u UJ > o an c e h i u. _c d Cï> > < X ca E > BD 433 BD 434 BD 435 BD 436 BD 437 BD 438 BD 439 BD 440 BD 441 BD 442 BD 533 BD 534 BD 535 BD 536 BD 537 BD 538 BD 663 BD 664 BD 705 BD 706 BD 707 BD 708 BD 709 BD 710
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O-126
BD NPN transistors
BD 440 NPN transistors
bdw 36
BD PNP
BD 440 PNP transistors
434 NPN transistors
BD 909
bd 911
BDw 32
LT 442
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Untitled
Abstract: No abstract text available
Text: BD433, BD435, BD437 BD434, BD436, BD438 BD433, 435, 437 BD434, 436, 438 NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS Medium power linear and Switching Applications PIN CONFIGURATION 1. EMITTER 2. COLLECTOR 3. BASE MIN. DIM rr 7.8 B 10.5 10.8
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BD433,
BD435,
BD437
BD434,
BD436,
BD438
00121D
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Untitled
Abstract: No abstract text available
Text: BD433, BD435, BD437 BD434, BD436, BD438 BD433, 435, 437 BD434,436, 438 NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS Medium power linear and Switching Applications PIN CONFIGURATION 1. EMITTER 2. COLLECTOR 3. BASE 1 - rr I_ DIM & MAX. A 7,4
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BD433,
BD435,
BD437
BD434,
BD436,
BD438
BD434
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8043
Abstract: 33T4 BD433 BD434 BD435 BD436 BD437 BD438 DDD121D
Text: BD433, BD435, BD437 BD434, BD436, BD438 BD433, 435, 437 BD434, 436, 438 NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS M edium pow er linear and Switching Applications PIN CONFIGURATION 1. EMITTER 2. COLLECTOR 3. BASE 1 DIM MIN. MAX. ‘V A 7.4
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BD433,
BD435,
BD437
BD434,
BD436,
BD438
DDD121D
8043
33T4
BD433
BD434
BD435
BD436
BD438
DDD121D
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bc 540
Abstract: TRANSISTOR BC 137 TRANSISTOR BC 187 transistor Bc 540 TRANSISTOR BC 136 bc 207 npn BC 677 bsv57b TRANSISTOR BD 187 BD 139 N
Text: Power transistors for horizontal deflection output circuits Type Structure Fig. Nr. Characteristics Maximum ratings ptot at 'case = +90°c 7c :a v W A fj Notes at ^ CERM V M Hz rc mA ^ CEsat a / q and " F E V A BU 204 NPN 25 10.0 2.5 1300 7.5 100 S5 2.0 2.0
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BC1611)
BCY58
BCY59
BD1361)
BD436'
BC432'
BC547
bc 540
TRANSISTOR BC 137
TRANSISTOR BC 187
transistor Bc 540
TRANSISTOR BC 136
bc 207 npn
BC 677
bsv57b
TRANSISTOR BD 187
BD 139 N
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tfk 434
Abstract: tfk 436 tfk 435 bd 435 Bo435 tfk u 436 BD433 bd435 DIN125A R 433 A
Text: BD 433 *BD 435 Silizium-NPN-Epibasis-Leistungstransistoren Silicon NPN Epibase Power Transistors Anwendungen: NF-Endstufen Applications: AF-output stages Besondere Merkmale: • Niedrige Betriebsspannungen speziell für Autoradiobetrieb • Hohe Stromverstärkung
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BD433,
tfk 434
tfk 436
tfk 435
bd 435
Bo435
tfk u 436
BD433
bd435
DIN125A
R 433 A
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Untitled
Abstract: No abstract text available
Text: Philips Com ponents Datasheet status Product specification date of issue April 1991 BDS643/645/647/649/651 NPN silicon Darlington power transistors PINNING -SOT223 DESCRIPTION NPN epitaxial base transistors in a monolithic Darlington circuit in SOT223, intended for general
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BDS643/645/647/649/651
-SOT223
OT223,
BDS644/646/648/650/652.
bbS3T31
0034bt
bbS3T31
0034bl0
DQ34bll
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BU25150X
Abstract: BU2508-AX BU2708AX BUS08D BUT12AF BU2708DX BU2725DX BU2720DX BU1508AX BU1508DX
Text: Philips Semiconductors High-voltage and Switching NPN Power Transistors Types added to the range since the last issue of Handbook SC06 1996 issue are shown in bold print. TYPE NUMBER PAGE TYPE NUMBER PAGE TYPE NUMBER PAGE BU505 38 BU2520AW 203 BU2722AX 387
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BU505
BU505D
BU505DF
BU505F
BU506
BU506D
BU506DF
BU506F
BU508AF
BU508AW
BU25150X
BU2508-AX
BU2708AX
BUS08D
BUT12AF
BU2708DX
BU2725DX
BU2720DX
BU1508AX
BU1508DX
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