BMR462
Abstract: fuse 12a smd
Text: E Ericsson Internal TABLE OF CONTENTS Prepared also subject responsible if other SEC/S Stella Song Approved 1 (1) No. Checked BMR462 series PoL Regulators Input 4.5-14 V, Output up to 12 A / 60 W 001 52-EN/LZT 146 434 Uen Specification Technical Date 2012-09-26
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BMR462
52-EN/LZT
fuse 12a smd
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BMR 640
Abstract: BMR462 ericsson BMR 610 BMR4621002 fah 15 fuse fprog II pocket Scale block diagram
Text: E Ericsson Internal PRODUCT SPECIFICATION TABLE OF CONTENTS Prepared also subject responsible if other No. EAB/FAC/P Johan Hörman Approved Checked BMR 462 series POL Regulators Input 4.5-14 V, Output up to 12 A / 60 W 1/1301-BMR 462 Uen 00152-EN/LZT 146
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1/1301-BMR
00152-EN/LZT
BMR 640
BMR462
ericsson BMR 610
BMR4621002
fah 15 fuse
fprog II
pocket Scale block diagram
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Untitled
Abstract: No abstract text available
Text: 20/}~ 5363+;<9/ 2312 87>/9 4+;-2361 9/4+? 0DAOPMDN y 7<B2 8;B lpbm\abg` \ZiZ[bebmr y KZm\abg` k^eZr y LZgnZe lpbm\a _ng\mbhg ZoZbeZ[e^ y Eb^e^\mkb\ lmk^g`ma@ fhk^ maZg :dU /[^mp^^g \hbe Zg] \hgmZ\ml0 y Fgobkhgf^gmZe _kb^g]er ikh]n\m /QhIR \hfiebZgm0 y Nnmebg^ Ebf^glbhgl@ /<<4= q ;746 q 794<0ff
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7B27C27D
666UB
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906H
Abstract: LZ23H3V1
Text: LZ23H3V1 1/3-type Interline Color CCD Area Sensor with 1 090 k Pixels LZ23H3V1 The LZ23H3V1 is a 1/3-type 6.0 mm solid-state image sensor that consists of PN photo-diodes and CCDs (charge-coupled devices). With approximately 1 090 000 pixels (1 217 horizontal x
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LZ23H3V1
LZ23H3V1
16-pin
WDIP016-N-0500C)
906H
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510H
Abstract: 511H 512H 524H 525H LZ23J3V OPTICAL SENSOR 676 sharp CCD Image Sensor
Text: Back 1/2.7-type Interline Color CCD Area Sensor with 1 310 k Pixels LZ23J3V DESCRIPTION PIN CONNECTIONS The LZ23J3V is a 1/2.7-type 6.72 mm solid-state image sensor that consists of PN photo-diodes and CCDs (charge-coupled devices). With approximately 1 310 000 pixels (1 344 horizontal x
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LZ23J3V
LZ23J3V
16-PIN
510H
511H
512H
524H
525H
OPTICAL SENSOR 676
sharp CCD Image Sensor
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Untitled
Abstract: No abstract text available
Text: 20/~| 2312 87=/9 4+;-2361 9/4+> 0B?NOLBM T T T T T T T T -734 -76;+-; .+;+ EhgmZ\m ZkkZg`^f^gm SJ3 SF EhgmZ\m k^lblm^g\^ Tri5A759<f 081 C`SgO9 977C 9<7VCE EhgmZ\m kZmbg` 0R^l5 ehZ]1 977C Pnel^ FnkZmbhg fl fbg5 <7dVC = ;5? 8<7 89 @5= 8<7 9; 8@59 8<7 ;? :?5;
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87flB
87flW
Ciikhq587W
977C1
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mf366
Abstract: EZ 639 FGJ 53 ez+637 555TAC M33 63 transistor m33 FGJ 55 ADY 89 HF66
Text: 20zz~0y+ 5363+;<9/ 2312 87>/9 9/4+? 0DANOLDM U U U U U U U U U U U U F`c\ Mf3?E689:6< F`c\ Mf3?66;>89 -76;+-; .+;+ AC mfckX^\ Zf`c kpg\ 6;A jn`kZ_`e^ ZXgXY`c`kp 6 - 7 gfc\ Zfe]`^liXk`fej :bT [`\c\Zki`Z jki\e^k_ .Y\kn\\e Zf`c Xe[ ZfekXZkj/ Kfn _\`^_k? 6:3< dd
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TDE598
mf366
EZ 639
FGJ 53
ez+637
555TAC
M33 63
transistor m33
FGJ 55
ADY 89
HF66
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Untitled
Abstract: No abstract text available
Text: 20}~0 :<,5363+;<9/ 36;/95/.3+;/ 87>/9 9/4+? 0C@MNKCL S :A jn`kZ_`e^ ZXgXY`c`kp S 65bT `dglcj\ n`k_jkXe[ mfckX^\ .Y\kn\\e Zf`c Xe[ ZfekXZkj/ S K\\kj TDE 5<551 5;86 i\`e]fiZ\ `ejlcXk`fe S H`^_cp \]]`Z`\ek dX^e\k`Z Z`iZl`k ]fi _`^_ j\ej`k`m`kp? 755dU S Eoki\d\cp jdXcc ]ffkgi`ek lk`c`q`e^ NCB Xi\X
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755dU
79TDC/
QeM71
V65555
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ez 637
Abstract: No abstract text available
Text: 20}~0 :<,5363+;<9/ 36;/95/.3+;/ 87>/9 9/4+? 0C@MNKCL S :A jn`kZ_`e^ ZXgXY`c`kp S 65bT `dglcj\ n`k_jkXe[ mfckX^\ .Y\kn\\e Zf`c Xe[ ZfekXZkj/ S K\\kj TDE 5<551 5;86 i\`e]fiZ\ `ejlcXk`fe S H`^_cp \]]`Z`\ek dX^e\k`Z Z`iZl`k ]fi _`^_ j\ej`k`m`kp? 755dU S Eoki\d\cp jdXcc ]ffkgi`ek lk`c`q`e^ NCB Xi\X
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755dU
79TDC/
QeM71
V65555
ez 637
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ez 637
Abstract: U539 TAC47 B855 65BT NK 637 KFC 1/2H
Text: 20}~0 :<,5363+;<9/ 36;/95/.3+;/ 87>/9 9/4+? 0C@MNKCL S :A jn`kZ_`e^ ZXgXY`c`kp S 65bT `dglcj\ n`k_jkXe[ mfckX^\ .Y\kn\\e Zf`c Xe[ ZfekXZkj/ S Rpg\ 7 d\\kj TDE 5<551 5;86 i\`e]fiZ\ `ejlcXk`fe S H`^_cp \]]`Z`\ek dX^e\k`Z Z`iZl`k ]fi _`^_ j\ej`k`m`kp? 755dU S Eoki\d\cp jdXcc ]ffkgi`ek lk`c`q`e^ NCB Xi\X
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755dU
85TDC
V65555
ez 637
U539
TAC47
B855
65BT
NK 637
KFC 1/2H
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Untitled
Abstract: No abstract text available
Text: Technical Information PrimeSTACK 6PS0300R12KS4-3G Vorläufige Daten preliminary data Key data 3x 168A AC at 400V AC, forced air fan not implemented General information for: Stacks for various inverter application. Semiconductors, heat sinks, drivers and sensors included.
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6PS0300R12KS4-3G
3564E26*
1231423567896AB3C736DCEF32
4112BF3567896
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Q7666
Abstract: No abstract text available
Text: 20}~0{; :<,5363+;<9/ 2312 ;/58/9+;<9/ 9/4+? 0DANOLDM Gbe^ Nh4@F79:;7= T 76B lpbm\abg` \ZiZ\bmr /Zm 76; 0 T :666VBD lnk`^ ohemZ`^/[^mp^^g \hbe Zg] \hgmZ\ml0 = . / T De^ZkZg\^ 5 \k^^iZ`^ ]blmZg\^ f^^mbg` VEF6:9; 5 6=66 Gbe^ Nh4@ :6679?; T UL?:2 V36 _eZffZ[bebmr \eZll
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666VBD
Q7666
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VDE598
Abstract: BG 65A
Text: 20}~0{; .JQC27;F2T/ :<,5363+;<9/ 2312 ;/58/9+;<9/ 9/4+? 0DANOLDM U 9555VAC lnk`^ ohemZ`^.[^mp^^g \hbe Zg] \hgmZ\ml/ U 65A 7:5VAC lpbm\abg` \ZiZ\bmr .Zm 65: / U Ce^ZkZg\^ 4 \k^^iZ`^ ]blmZg\^ Fbe^ Nh3?E6889=6 f^^mbg` VDE598: 4 5<55 U UL>91 V25 _eZffZ[bebmr \eZll
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JQC27
9555VAC
E6889
VDE598:
VDE598
BG 65A
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Untitled
Abstract: No abstract text available
Text: 20}~0. :<,5363+;<9/ 36;/95/.3+;/ 87>/9 9/4+@ 0DANOLDM W 76B lpbm\abg` \ZiZ[bebmr W TV3> 78;VBD Ziikho^] [r UL lmZg]Zk] /77>B bgknla \nkk^gm0 W J]^Ze _hk ]^ob\^ ihp^k k^]n\mbhg W 7 Ghkf B Zg] 7 Ghkf D \hg_b`nkZmbhgl W Fgobkhgf^gmZe _kb^g]er ikh]n\m /RhIS \hfiebZgm0
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DQD766686
96VED
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TIc 1168
Abstract: No abstract text available
Text: PROOUCT NUMBER 50786-XXXXX DIM "A” ± .0 1 0 0.100 [2.54] 2X -A - . 8 2 [20.8] 275 [6.98] — DIM " J " - -Idim "C"| 3X r .436 [11-07] E n a ? lE H l 1 •— .460 [11.68] .100 [2.54]| 3X ——1-400 [ l o T ë ï l 2X I TT m NOTE 5 J L S 1-050 [T727H
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50786-XXXXX
T727H
JZ22Z2Í
000ft
TIc 1168
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Untitled
Abstract: No abstract text available
Text: T D R A WI N G THIS MADE IN D R A WI N G THIRD IS ANGLE UNRUBLI S H E D , COPYRIGHT 6 B 2 3 4 PROJECTION RELEASED 19 BY AMP FOR LOC PUBLICATION INCORPORATED. ALL INTERNATIONAL RIGHTS D I ST REV I 5 I0N5 DF RESERVED. ZONE LTR D E S C R I P T I ON B -D -►
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usOI6412
/home/usOI6412/docmod
11-FEB-05
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SEG NC3
Abstract: LZ2414J LJ sharp Sharp LJ
Text: LZ2414J SHARP 1/4 type B/W CCD Area Sensor for EIA DESCRIPTION PIN CONNECTIONS LZ2414J is a 1/4-type 4.5 mm solid-state image sensor that consists of PN phote-diodes and CCDs (charge-coupled devices). Having approxi mately 270 000 pixels (horizontal 542 x vertical
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LZ2414J
LZ2414J
16-pin
WDIP016-N-0500B)
SEG NC3
LJ sharp
Sharp LJ
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74LS189 equivalent
Abstract: 74LS200 AmZ8036 Z8104 74LS300 AM9511 Am2505 27s13 54S244 27LS00
Text: Advanced Micro Devices Condensed Catalog 1981 Advanced Micro Devices, Inc. Advanced Micro Devices reserves the right to make changes in its products without notice in order to improve design or performance characteristics. The company assumes no responsibility for the use of any circuits described herein.
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AMD-599
LM101
SN54LS01
132nd
74LS189 equivalent
74LS200
AmZ8036
Z8104
74LS300
AM9511
Am2505
27s13
54S244
27LS00
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QQ-C-576A
Abstract: No abstract text available
Text: i DRAWING MADE IN AMERICAN PROJECTION I » 4 .0 BY AMR INCORPORATED. ALL RIGHTS RESERVED. AMP PRODUCTS COVERED BY PATENTS AND/OR PATENTS PENDING. FI EVISIONS ZONE L.TR D E S C R IP TIO N A PPR O VED D ATE R E D R A W N .OPQCTED t ADDED 2-322010-3" ~NP5> fc S -O C.S9 REV Z
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MIL-T-I07Z7)
3Z2010
QQ-C-576A
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bx11
Abstract: 512H 524H LZ23J3V 510H 511H photo 3-pin IR sensor sv4i
Text: SHARP SPEC No. ISSUE: E L 1 0 8 026 Aug. 17 1998 T o ; S P E C I F I C A T I O N S Product Type 1/2.7-type 6. 72mm Interline Color CCD Area Sensor with 1310k Pixels Model No. LZ2 3 J3V jj-This specifications contains 27 pages including the cover and appendix.
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EL108026
1310k
LZ23J3V
bx11
512H
524H
LZ23J3V
510H
511H
photo 3-pin IR sensor
sv4i
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bzx8sc
Abstract: BZX85C
Text: FAG O R^ BZX85C10 BZX85C200 1.3 W Zener Diodes Dimensions in nun. DO-41 Plastic Voltage 10 to 200 V 3 CO N §1 '1 Power 1.3 W 5±0.2 , S 8 .5 “ .s Mounting instructions 1. Min. distance from body to soldering point, 4 mm. 2. Max. solder temperature, 350 °C.
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DO-41
BZX85C10
BZX85C200
BZX85C
bzx8sc
BZX85C
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Untitled
Abstract: No abstract text available
Text: M OSEL VITELIC V43648Y04VTG 3.3 VOLT 8 M x 64 HIGH PERFORMANCE 100 M HZ SDRAM UNBUFFERED SODIMM PRELIMINARY Features Description • JEDEC-standard 144 pin, Small-Outline, Dual in line Memory Module SODIMM ■ Serial Presence Detect with E2PROM ■ Nonbuffered
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V43648Y04VTG
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Untitled
Abstract: No abstract text available
Text: M OSEL VITELIC V43644Y04VTG 3.3 VOLT 4 M x 64 HIGH PERFORMANCE 100 M HZ SDRAM UNBUFFERED SODIMM PRELIMINARY Features Description • JEDEC-standard 144 pin, Small-Outline, Dual in line Memory Module SODIMM ■ Serial Presence Detect with E2PROM ■ Nonbuffered
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V43644Y04VTG
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Untitled
Abstract: No abstract text available
Text: HD74LVC125A-Quad. Bus Buffer Gates with 3-state Outputs Description The HD74LVC125A has four bus buffer gates in a 14 pin package. The device require the three state control input C to be taken high to put the output into the high impedance condition, whereas the device
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HD74LVC125A------Quad.
HD74LVC125A
Bb74LVCl25A
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