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    43T TRANSISTOR Search Results

    43T TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    43T TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    B0239A

    Abstract: No abstract text available
    Text: BD239, BD239A, BD239B, BD239C SbE D • File Number -7^ 3 3 ^ 0 9 43DS271 GD40hSb 43T « H A S Epitaxial-Base Silicon N-P-N VERSAWATT Transistors 669 harris sehicon» sector For Power-Amplif ier and High-Speed-Switching Applications Features: ■ 30 W at 25°C case temperature


    OCR Scan     		BD239, BD239A, BD239B, BD239C 43DS271 GD40hSb BD240, BD240A, BD240B, BD240C B0239A PDF

    MATRA

    Abstract: t4211 MCT12K MC10K
    Text: 4TE — MATRA D H H S Preliminary • SflböMSb GÜ0E3Ü4 43T ■ H M H S =T 7= iiiiK iiii l i T H January 1991 ASIC HI-REL DATA SHEET MC GATE ARRAY SERIES 0.8 MICRON SCMOS FEATURES SUPER CMOS TECHNOLOGY -1 nm DRAWN 2 METAL LAYERS FLEXIBLE I/O CONFIGURATION : INPUT,


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER MODULE D 0 17 E 3cì 43T • _ _ M57782 824-851 MHz, 12.5V, 7W, FM MOBILE RADIO OUTLINE DRAWING B LO C K DIAGRAM Dimensions in mm © PIN : ©Pin : RF INPUT ©VCCI VCC 2 ®VCC3 ® P0 ©GND : 1st. DC SU PPLY : 2nd. DC SU PPLY : 3rd. DC S U PPLY


    OCR Scan     		M57782 PDF

    SFH6315T

    Abstract: 43t transistor SFH6316T SFH6343 SFH6343T HCPL0453 HCPL0500 HCPL0501
    Text: N EW SFH6315T SFH6316T SFH6343T FEATURES • Surface Mountable • Industry Standard SOIC-8 Footprint • Compatible with Infrared Vapor Phase Reflow and Wave Soldering Processes • Isolation Voltage, 2500 VRMS • Very High Common Mode Transient Immunity:


    Original     		SFH6315T SFH6316T SFH6343T SFH6343T) SFH6315T--HCPL0500 SFH6316T--HCPL0501 SFH6343T--HCPL0453 SFH6315T/16T/43T, SFH6315 SFH6315T) SFH6315T 43t transistor SFH6316T SFH6343 SFH6343T HCPL0453 HCPL0500 HCPL0501 PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering num ber: EN3714 2SB1508/2SD2281 No.3714 PNP/NPN Epitaxial Planar Silicon Transistors 50V/12A Switching Applications Applications • Relay drivers, high-speed inverters, converters. Features • Low collector-to-emitter saturation voltage: VcE sat = —0.5V(PNP), 0.4V(NPN)max.


    OCR Scan     		EN3714 2SB1508/2SD2281 0V/12A 2SB1508 5111MH, 10OmA -80mA -60mA PDF

    mpsa14

    Abstract: 43t SOT23 43t transistor
    Text: MPSA14 I MMBTA14 / PZTA14 D iscrete P O W E R & S ig n a l Technologies 6* National Semiconductor PZTA14 MMBTA14 MPSA14 SOT-23 B SOT-223 M ark: 1 N NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from


    OCR Scan     		MPSA14 MMBTA14 PZTA14 MPSA14 MMBTA14 OT-23 OT-223 43t SOT23 43t transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number:EN5958 NPN Triple Diffused Planar Silicon Transistor 2SC5453 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications ISA/iYOl Features Package Dimensions • High speed. - High breakdown voltage VCBO=1600V . • High reliability (Adoption o f HVP process).


    OCR Scan     		EN5958 2SC5453 2048B DG2334b PDF

    PHOTO NPN

    Abstract: No abstract text available
    Text: NPN Photo Transistor TP S 618 4 5 A pplications • Photo Interrupter +0 -1.4 -0.2 2.4 ±0-3 • Photoelectric Counter • Position and Rotational Speed Sensor + 0 3-0.2 • Automatic Control Unit Features - (T 5 ) • Fast Response Speed 2 ± 0.2 • Spectrally and Mechanically Compatible with TLN107A


    OCR Scan     		TLN107A 98-4LEDS 100//A PHOTO NPN PDF

    43t SOT23

    Abstract: Philips MBB Silicon N-Channel Junction FET sot23 BSS131 DSS SOT23 p mos sot23
    Text: • 711002b OObRSÔÔ STS ■ P HIN Philips Semiconductors Data sheet status P relim inary specification date of issue April 1991 N-channel enhancement mode vertical D-MOS FET Q U IC K REFERENCE DATA DESCRIPTION Silicon n-channel enhancem ent m ode vertical D-MO S transistor in a


    OCR Scan     		711002b BSS131 43t SOT23 Philips MBB Silicon N-Channel Junction FET sot23 BSS131 DSS SOT23 p mos sot23 PDF

    Untitled

    Abstract: No abstract text available
    Text: KD324515 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 D u a l D a r liH Q t O H Transistor Module 150 Amperes/600 Volts Description: The Powerex Dual Darlington Transistor Modules are high power devices designed for use


    OCR Scan     		KD324515 Amperes/600 000fll3fi PDF

    E 94733

    Abstract: No abstract text available
    Text: SIEMENS BFR 92P NPN Silicon RF Transistor • For broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA • Complementary type: BFT92 PNP • CECC-type available: CECC 50002/249 ESP: Electrostatic discharge sensitive device, observe handling precaution!


    OCR Scan     		BFT92 Q62702-F1050 OT-23 fl235bG5 900MHz 35b05 E 94733 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 9.688A International io r i Rectifier IRGBC30S INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT Features • Switching-loss rating includes all “tail" losses • Optimized for line frequency operation to 400 Hz See Fig. 1 for Current vs. Frequency Curve


    OCR Scan     		IRGBC30S O-220AB TQ-220AB S54S2 PDF

    Untitled

    Abstract: No abstract text available
    Text: BD934F; BD936F BD938F; BO940F BD942F SILICON EPITAXIAL POWER TRANSISTORS PNP silicon power transistor in a S0T186 envelope with an electrically insulated mounting base, intended fo r use in audio output stages and fo r general purpose amplifier applications.


    OCR Scan     		BD934F; BD936F BD938F; BO940F BD942F S0T186 BD933F, BD935F, BD937F, BD939F PDF

    B0938

    Abstract: B0942 B0941 BD933F BD934F BD935F BD936F BD937F BD938F BD939F
    Text: BD934F; BD936F BD938F; BD940F BD942F SILICON EPITAXIAL POWER TRANSISTORS PNP Silicon power transistor in a SOT 186 envelope with an electrically insulated mounting base, intended for use in audio output stages and for general purpose amplifier applications.


    OCR Scan     		BD934F; BD936F BD938F; BD940F BD942F BD933F, BD935F, BD937F, BD939F B0941F. B0938 B0942 B0941 BD933F BD934F BD935F BD936F BD937F BD938F PDF

    Untitled

    Abstract: No abstract text available
    Text: NPN EPITAXIAL SILICON TRANSISTOR KSC2752 HIGH SPEED, HIGH VOLTAGE SWICHING INDUSTRIAL USE ABSOLUTE MAXIMUM RATINGS Characteristic Rating Symbol Unit Collector- Base Voltage V cB O 500 V Collector-Emitter Voltage V cE O 400 V Emitter- Base Voltage V ebo Collector Current DC


    OCR Scan     		KSC2752 300ns, 00bGb74 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BUZ 71 A Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type Vds b f f DS on Package Ordering Code BUZ 71 A 50 V 13 A 0.12 £2 TO-220 AB C67078-S1316-A3 Maxim um Ratings Parameter Symbol Continuous drain current


    OCR Scan     		O-220 C67078-S1316-A3 GPT05155 0235b05 PDF

    SFH6316T

    Abstract: HCPL0453 HCPL0500 HCPL0501 SFH6315T SFH6343 SFH6343T
    Text: SFH6315T/SFH6316T/SFH6343T High Speed Optocoupler FEATURES • Surface Mountable • Industry Standard SOIC-8 Footprint • Compatible with Infrared Vapor Phase Reflow and Wave Soldering Processes • Isolation Voltage, 3000 VRMS • Very High Common Mode Transient Immunity:


    Original     		SFH6315T/SFH6316T/SFH6343T SFH6343) SFH6315T--HCPL0500 SFH6316T--HCPL0501 SFH6343T--HCPL0453 SFH6315T/ Temperature-SFH6315T 17-August-01 SFH6316T HCPL0453 HCPL0500 HCPL0501 SFH6315T SFH6343 SFH6343T PDF

    Untitled

    Abstract: No abstract text available
    Text: • 4305271 0QS4513 720 ■ 3 3 H A R R HAS IS 2 6 8 9 7 P-Channel Enhancement-Mode Power MOS Field-Effect Transistors A u g u s t 1991 Features • N Package TO-204AA BOTTOM VIEW -1 2 A , -1 0 0 V * rD S on = 0 -3 n SOURCE • S O A is P o w e r-D is sip atio n Lim ited


    OCR Scan     		0QS4513 O-204AA 005451tj PDF

    B1030

    Abstract: high voltage swiching transistors swiching full KSC2752
    Text: NPN EPITAXIAL SILICON TRANSISTOR KSC2752 HIGH SPEED, HIGH VOLTAGE SWICHING INDUSTRIAL USE ABSOLUTE MAXIMUM RATINGS Rating Symbol Characteristic Unit Collector- Base Voltage Collector-Em itter Voltage V cbO 500 V V cE O 400 V Emitter- Base Voltage VEbo 7 V


    OCR Scan     		KSC2752 300ns, 00bDb7M B1030 high voltage swiching transistors swiching full KSC2752 PDF

    6343 opto

    Abstract: HCPL0453 HCPL0500 HCPL0501 SFH6315T SFH6316T SFH6343 SFH6343T
    Text: SFH6315T SFH6316T SFH6343T High Speed Optocoupler FEATURES • Surface Mountable • Industry Standard SOIC-8 Footprint • Compatible with Infrared Vapor Phase Reflow and Wave Soldering Processes • Isolation Voltage, 3000 VRMS • Very High Common Mode Transient Immunity:


    Original     		SFH6315T SFH6316T SFH6343T SFH6343) SFH6315T--HCPL0500 SFH6316T--HCPL0501 SFH6343T--HCPL0453 SFH6315/6 SFH6315T/16T/43T, 1-888-Infineon 6343 opto HCPL0453 HCPL0500 HCPL0501 SFH6315T SFH6316T SFH6343 SFH6343T PDF

    transistor KJJ

    Abstract: No abstract text available
    Text: SFH6315T SFH6316T SFH6343T SIEMENS « HIGH SPEED OPTOCOUPLER FEA TU R ES 'lu; ir: ititi • Surface Mountable • Industry Standard SOIC-8 Footprint • Compatible with Infrared Vapor Phase Reflow and Wave Soldering Processes • Isolation Voltage, 2500 VRMS


    OCR Scan     		SFH6315T SFH6316T SFH6343T SFH6343T) SFH6315T--HCPL0500 SFH6316T-- HCPL0501 SFH6343T-- HCPL0453 transistor KJJ PDF

    mcd206

    Abstract: philips Trimmer 60 pf BLV13 MCD211 C106W
    Text: Philips Sem iconductors VHF power transistor • bSE D DQbSûES P H IL IP S T ll PHI N Emitter-ballasting resistors for an optimum temperature profile Gold metallization ensures excellent reliability. IN T E R N A TIO N A L NPN silicon planar epitaxial transistor encapsulated in a 4-lead


    OCR Scan     		BLV13 OT123 PINNING-SOT123 MCD210 MBA451 MCD211 mcd206 philips Trimmer 60 pf BLV13 MCD211 C106W PDF

    bgjg

    Abstract: transistor T philips 2322 733 BLF542 UFU370 3a0c 2222 030 capacitor philips philips potentiometer 43t transistor 3909
    Text: Philips Semiconductors_ Product specification UHF power MOS transistor PHILIPS INTERNATIONAL FEATURES • • • • • • T " 3 <î?~0 cÎBLF542 5tiE D • 711DflSb 0D43TS4 5T3 ■ PHIN PIN CONFIGURATION High power gain Easy power control


    OCR Scan     		-0ciBLF542 0D43TS4 OT171 PINNING-SOT171 MBA931 MRA971 bgjg transistor T philips 2322 733 BLF542 UFU370 3a0c 2222 030 capacitor philips philips potentiometer 43t transistor 3909 PDF

    D10N2

    Abstract: marking dC
    Text: Order this data sheet by MRF10070H/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF10070H* Microwave Pulse Power Transistor 70 Watts Peak NPN 1025-1150 MHz Designed for 1025-1150 MHz pulse common base amplifiers. C P liO • Guaranteed Performance at 1090 MHz - Output Power = 70 Watts Peak


    OCR Scan     		MRF10070H* 1PHX312SO-1 MRF10070H/D 3b72S4 D10N2 marking dC PDF