4406 transistor
Abstract: MPF201 AO4406
Text: March 2002 AO4406 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4406 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device makes an excellent high side switch for
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AO4406
AO4406
4406 transistor
MPF201
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MOSFET 4407
Abstract: IFR410 4406 mosfet IFU410 IFR-410 MOSFET 4407 a 4404 mosfet IRFU410 4407 mosfet ADVANCED LINEAR DEVICES 4407
Text: IRFR410, IRFU410 Data Sheet 1.5A, 500V, 7.000 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode
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IRFR410,
IRFU410
TA17445.
MOSFET 4407
IFR410
4406 mosfet
IFU410
IFR-410
MOSFET 4407 a
4404 mosfet
IRFU410
4407 mosfet
ADVANCED LINEAR DEVICES 4407
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MAX16058ATA17
Abstract: No abstract text available
Text: MAX16058 RELIABILITY REPORT FOR MAX16058ATA17+T PLASTIC ENCAPSULATED DEVICES February 3, 2011 MAXIM INTEGRATED PRODUCTS 120 SAN GABRIEL DR. SUNNYVALE, CA 94086 Approved by Sokhom Chum Quality Assurance Reliability Engineer Maxim Integrated Products. All rights reserved.
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MAX16058
MAX16058ATA17
/-2500V
JESD22-A114.
/-250mA
JESD78.
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Untitled
Abstract: No abstract text available
Text: ISL54406 Features The Intersil ISL54406 is a Dual SPST Single Pole/Single Throw switch that provides a very low distortion audio path for a stereo headphone or high impedance line-in load. This path can be interrupted to provide >110dB of off-isolation for signal muting purposes into 32Ω or high
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ISL54406
ISL54406
110dB
TB389.
MO-229-WEED-3
FN6578
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ISL54406
Abstract: ISL54406EVAL1Z ISL54406IRTZ ISL54406IRTZ-T ISL54406IRUZ-T TB347 TB363
Text: ISL54406 Features The Intersil ISL54406 is a Dual SPST Single Pole/Single Throw switch that provides a very low distortion audio path for a stereo headphone or high impedance line-in load. This path can be interrupted to provide >110dB of off-isolation for signal muting purposes into 32Ω or high
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ISL54406
ISL54406
110dB
TB389.
MO-229-WEED-3
FN6578
ISL54406EVAL1Z
ISL54406IRTZ
ISL54406IRTZ-T
ISL54406IRUZ-T
TB347
TB363
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MAX4044
Abstract: MAX4040 MAX4040ESA MAX4040EUA MAX4040EUK-T MAX4041ESA MAX4041EUA MAX4042ESA MAX4042EUA Nippon capacitors
Text: 19-1377; Rev 0; 5/98 Single/Dual/Quad, Low-Cost, SOT23, Micropower Rail-to-Rail I/O Op Amps _Features ♦ Single-Supply Operation Down to +2.4V These amplifiers have outputs that typically swing to within 10mV of the rails with a 100kΩ load. Rail-to-rail
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MAX4040
MAX4044
10LUMAXB
MAX4044
MAX4040ESA
MAX4040EUA
MAX4040EUK-T
MAX4041ESA
MAX4041EUA
MAX4042ESA
MAX4042EUA
Nippon capacitors
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MAX4040
Abstract: MAX4040ESA MAX4040EUA MAX4040EUK-T MAX4041ESA MAX4041EUA MAX4042ESA MAX4042EUA MAX4044 Nippon capacitors
Text: 19-1377; Rev 0; 5/98 Single/Dual/Quad, Low-Cost, SOT23, Micropower Rail-to-Rail I/O Op Amps _Features ♦ Single-Supply Operation Down to +2.4V These amplifiers have outputs that typically swing to within 10mV of the rails with a 100kΩ load. Rail-to-rail
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MAX4040
MAX4044
10LUMAXB
MAX4040ESA
MAX4040EUA
MAX4040EUK-T
MAX4041ESA
MAX4041EUA
MAX4042ESA
MAX4042EUA
MAX4044
Nippon capacitors
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Untitled
Abstract: No abstract text available
Text: 19-1377; Rev 1; 9/05 Single/Dual/Quad, Low-Cost, SOT23, Micropower Rail-to-Rail I/O Op Amps _Features The MAX4040–MAX4044 family of micropower op amps operates from a single +2.4V to +5.5V supply or dual ±1.2V to ±2.75V supplies and have rail-to-rail input and
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MAX4040â
MAX4044
90kHz
MAX4041/MAX4043
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MAX4040EUK-T
Abstract: MAX4040 MAX4040ESA MAX4040EUA MAX4041ESA MAX4041EUA MAX4042ESA MAX4042EUA MAX4044
Text: 19-1377; Rev 1; 9/05 Single/Dual/Quad, Low-Cost, SOT23, Micropower Rail-to-Rail I/O Op Amps _Features The MAX4040–MAX4044 family of micropower op amps operates from a single +2.4V to +5.5V supply or dual ±1.2V to ±2.75V supplies and have rail-to-rail input and
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MAX4040
MAX4044
90kHz
MAX4041/MAX4043
MAX4040EUK-T
MAX4040ESA
MAX4040EUA
MAX4041ESA
MAX4041EUA
MAX4042ESA
MAX4042EUA
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siemens VDE 0660 iec 947-2
Abstract: ups transformer winding formula 400 kvar LV capacitor bank siemens IEC 947-2 VDE 0660 siemens IEC 60947 VDE 0660 B32344 B4406 B44066-D5060-S400 B44066-D7025-S400 400 KVAR, 480 VAC, 3 phase Capacitor Bank
Text: Power Factor Correction Product Profile 2001 Catalog http://www.epcos.com L1 L2 L3 U I Preview General Awareness of the necessity of power quality is increasing, and power factor correction PFC will be implemented on a growing scale in future. Enhancing power
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DE70321
Abstract: CMX7032 MA09568 AIS marine receiver MA09567 MA06510 MA05126 DE70321 pcb VHF Transceiver IC dsc RF5110G
Text: DE70321/DE70321T CML Microcircuits Demonstration Kit User Manual COMMUNICATION SEMICONDUCTORS UM70321/9 September 2010 Provisional Issue Features • Class B AIS transceiver technology demonstrator DE70321T • Dual Channel Rx-only operation (DE70321) •
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DE70321/DE70321T
UM70321/9
DE70321T)
DE70321)
IEC62287
RS232
NMEA-0183
9600bps
DE70321
CMX7032
MA09568
AIS marine receiver
MA09567
MA06510
MA05126
DE70321 pcb
VHF Transceiver IC dsc
RF5110G
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MA09567
Abstract: MA09568 DE70321 pcb LTM-455EW
Text: DE70321/DE70321T CML Microcircuits Demonstration Kit User Manual COMMUNICATION SEMICONDUCTORS UM70321/9 September 2010 Provisional Issue Features • Class B AIS transceiver technology demonstrator DE70321T • Dual Channel Rx-only operation (DE70321) •
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DE70321/DE70321T
UM70321/9
DE70321T)
DE70321)
IEC62287
RS232
NMEA-0183
9600bps
DE70321
MA09567
MA09568
DE70321 pcb
LTM-455EW
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digital FUEL METER of bikes
Abstract: Electric Bike microcontroller EN26 juvenile diabetes mentor robot Fuels from Plastic Wastes TPG kwh meter electronic of whirlpool whirlpool washing machine circuit electric bike motor
Text: Freescale Corporate Responsibility Report 08 20 14 26 40 4 33 Forward-Looking Statements Disclosure This report contains “forward-looking statements” within the meaning of the federal securities laws that involve risks and uncertainties. Forward-looking statements
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EP2C8F256 package
Abstract: S-2501-1 EP2C20F256 bga 896 TSMC 90nm sram
Text: Section I. Cyclone II Device Family Data Sheet This section provides information for board layout designers to successfully layout their boards for Cyclone II devices. It contains the required PCB layout guidelines, device pin tables, and package specifications.
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Untitled
Abstract: No abstract text available
Text: TYPE 2N5398 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR B U L L E T IN N O . D L -S 7 1 1 1 4 2 5 , A U G U S T 1971 FOR V H F A M P L IF IE R A N D M IX E R A PPLICATIO N S • High Transconductance . . . 5000 ¿¿mho Min at 450 M Hz • Low Crss . . . 1.3 pF Max
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2N5398
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Untitled
Abstract: No abstract text available
Text: IRFR410, IRFU410 S e m iconductor D ata S h eet 1.5A, 500V, 7.000 Ohm, N-Channel Power MOSFETs These are N-Channel enhancem ent mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a
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IRFR410,
IRFU410
000i2
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Untitled
Abstract: No abstract text available
Text: Operational Amplifiers Advance Information/ Preliminary Data CA3420A, CA3420 Low-Supply Voltage, Low-Input Current BiMOS Op Amps Features: • 2 -V s u p p ly at 300-fjA s u p p ly c u rre n t ■ 1-pA typ. in p u t c u rre n t (e ssentially con stant to 85°C )
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CA3420A,
CA3420
300-fjA
A3420A
CA3420*
905-2-I08)
CA3420H.
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sn75208
Abstract: SN75208B
Text: TEXAS INSTR - C L I N / I N T F O T I 8961724 TEXAS INSTR D Ë J flTt.1724 ODVSbBG LIN /IN TFC 91D 75630 D SN75207, SN75207B, SN75208, SN7520BB DUAL SEN SE AM PLIFIERS FOR M O S M EM O R IES OR DUAL HIGH SEN SITIVITY LINE RECEIVERS D 1 3 1 4 , J U L Y 1 9 7 3 —R EVISED SEPTEM BER 1986
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SN75207,
SN75207B,
SN75208,
SN7520BB
SN75107A,
SN75107B,
SN75108A,
SN75108B
6109A,
sn75208
SN75208B
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tgl 5151
Abstract: smd-transistor rft lautsprecher sce 238 smd-transistor rft katalog B 4101 RFT GER-A B 38593 RFT 38530 E52853
Text: Seite 3, 3-5/90 Mitteilung aus dem VEB Elektronik Gera Reparaturhinweise für 8teckernetzteile GCN 12 und LCN 6/12 Zur Vermeidung einer Gefährdung durch netzspannungsführende Teile bei der Fehlersuche an o.g. Steckernetzteilen wird folgendes vorgeschlagen:
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SE-NP0-10/
1500N
27/lp-400
22nF/50-250
tgl 5151
smd-transistor
rft lautsprecher
sce 238 smd-transistor
rft katalog
B 4101 RFT
GER-A
B 38593 RFT
38530
E52853
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d1684
Abstract: C3788 c4217 d1047 c2078 C4161 D1651 D1682 k2043 K1460
Text: Transistors Type Number SAftYO Index *:New products for FEB added. Type No. Package Page Type No. 2SA Typi T0220 2SA1011 NP Al 016,1 SPA A] 177 NP A 1207 MP Al 208 T0126 Al 209 A ’237 DP6A, B il A: 238 it A! 239 il Ax 240 NP A: 246 T0126 A: 248 h A. 249
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2SA1520
A1522
A1523
A1524
A1525
A1526
A1527
A1528
A1536
A1537
d1684
C3788
c4217
d1047
c2078
C4161
D1651
D1682
k2043
K1460
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Untitled
Abstract: No abstract text available
Text: intgl 8XC196MH INDUSTRIAL MOTOR CONTROL CHMOS MICROCONTROLLER High Performance CHMOS 16-bit CPU 16 MHz Operating Frequency 32 Kbytes of On-chip OTPROM/ROM 744 Bytes of On-chip Register RAM Register-to-register Architecture 16 Prioritized Interrupt Sources
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8XC196MH
16-bit
8-b45
8XC196MC/MD
8XC196MC
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LDR 03
Abstract: valvo halbleiter LDR -03 cny63 CNY62 BYX 71 800 CXY19 VALVO ldr 07 BZW10-12
Text: Halbleiter bauelemente • 1981/82 N, Bauelemente l m für die gesamte i f Elektronik V A L V O Valvo bietet das breiteste Produktprogram m an Bauelementen für die gesamte Elektronik in Deutschland: Bildröhren A blenkteile Tuner Lautsprecher Transform atoren
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RPY 86
Abstract: valvo halbleiter RPY94 CQY 24 BV EI 30-20 3001 LDR 03 diode byx 64 600 valvo transistoren KP101A BAV99-1
Text: Elektronik. Wir bauen die Elemente. v a i v D Halbleiterbauelemente Produktprogramm DH, April 1984 Elektronik. Wir bauen die Elemente Unser Arbeitsgebiet - besonders die Mikroelektronik - entwickelt sich immer rascher zum Motor für eine Vielzahl von Innovationen. Mit gründ
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cmc 2951
Abstract: equivalent transistor c 5888 2Z12 S211 "18621" MICROWAVE TRANSISTOR 32359 AM 5888 40738
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> TECHNICAL NOTE 1. P dBm Conversion Table for dBm to m W : P (m w ) = 10 10 , dBm 0.0 0.1 0.3 0.2 0.4 P(dBm) = 0.5 10 * log P ( mw) 0 .6 0.7 0.8 0 .9 0 .0 1.00 1.02 1.05 1.07 1.10 1.12 1.15 1.17 1.20 1.23 1.0 1.26 1.29 1.32
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Mo-20)
cmc 2951
equivalent transistor c 5888
2Z12
S211
"18621"
MICROWAVE TRANSISTOR
32359
AM 5888
40738
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