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    449 SOT23 Search Results

    449 SOT23 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    ISL54103IHZ-T7A Renesas Electronics Corporation DDC Accelerator (DDCA), SOT23, /Reel Visit Renesas Electronics Corporation
    EL6204CWZ-T7A Renesas Electronics Corporation Laser Driver Oscillator, SOT23, /Reel Visit Renesas Electronics Corporation
    ISL54103IHZ-T7 Renesas Electronics Corporation DDC Accelerator (DDCA), SOT23, /Reel Visit Renesas Electronics Corporation
    ISL21070CIH320Z-TK Renesas Electronics Corporation 25µA Micropower Voltage References, SOT23, /Reel Visit Renesas Electronics Corporation

    449 SOT23 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors FMMT449 TRANSISTOR NPN SOT–23 FEATURES  Low Equivalent On-Resistance MARKING: 449 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter 1. BASE Value


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    OT-23 FMMT449 500mA 100mA 200mA 100MHz PDF

    BUZ90af

    Abstract: hv82 MGF4919G-01 MGF4919G MGF2407A-01 BUZ80AF1 6n60 MGF1302-15 SSP 50N06 2n10l
    Text: МИКРОСХЕМЫ 1 ПОЛЕВЫЕ ТРАНЗИСТОРЫ ИМПОРТНЫЕ Наименование 2SJ 103 2SJ 200 2SJ 306 2SJ 307 2SJ 449 2SJ 79 2SK 1023 2SK 1058 2SK 1060 2SK 107 2SK 1082 2SK 1102 2SK 1117 2SK 1118 2SK 1120 2SK 1162 2SK 118 2SK 1198


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    O-251AA O-247AC O-220AB PowerSO-20 BUZ90af hv82 MGF4919G-01 MGF4919G MGF2407A-01 BUZ80AF1 6n60 MGF1302-15 SSP 50N06 2n10l PDF

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    Abstract: No abstract text available
    Text: SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR FMMT449 ISSUE 3 - NOVEMBER 1995 FEATURES * Low equivalent on-resistance; RCE sat 250mΩ at 1A 0.8 tf,tr,td IB1=IB2=IC/10 ns VCE=10V COMPLEMENTARY TYPE – PARTMARKING DETAIL – 150 IC/IB=10 0.6 E C FMMT549


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    FMMT449 IC/10 FMMT549 100ms PDF

    25 V 500mA TRANSISTOR SOT23

    Abstract: FMMT449 FMMT549 DSA003694
    Text: FMMT449 tf,tr,td IB1=IB2=IC/10 ns VCE=10V COMPLEMENTARY TYPE – PARTMARKING DETAIL – IC/IB=10 0.4 0.2 0.001 0.01 tr 800 td 0.1 50 ts 400 tf tr 200 td 10 1 ABSOLUTE MAXIMUM RATINGS. 600 0.01 0.1 1 I+ - Collector Current Amps VCE(sat) v IC Switching Speeds


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    FMMT449 IC/10 FMMT549 500mA, 100mHz 25 V 500mA TRANSISTOR SOT23 FMMT449 FMMT549 DSA003694 PDF

    25 V 500mA TRANSISTOR SOT23

    Abstract: FMMT449 FMMT549 08 sot23
    Text: FMMT449 tf,tr,td IB1=IB2=IC/10 ns VCE=10V COMPLEMENTARY TYPE – PARTMARKING DETAIL – IC/IB=10 0.4 0.2 0.001 0.01 tr 800 td 0.1 50 ts 400 tf tr 200 td 10 1 ABSOLUTE MAXIMUM RATINGS. 600 0.01 0.1 1 I+ - Collector Current Amps VCE(sat) v IC Switching Speeds


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    FMMT449 IC/10 FMMT549 500mA, 100mHz 25 V 500mA TRANSISTOR SOT23 FMMT449 FMMT549 08 sot23 PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type Product specification FMMT449 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 Low equivalent on-resistance. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 Absolute Maximum Ratings Ta = 25 Parameter Symbol


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    FMMT449 OT-23 100mA 200mA 500mA, 100MHz PDF

    FMMT449

    Abstract: SMD TRANSISTOR MARKING 2A TRANSISTOR SMD 1a 9 MARKING 449
    Text: Transistors IC SMD Type Medium Power Transistor FMMT449 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 Low equivalent on-resistance. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 Absolute Maximum Ratings Ta = 25 Parameter Symbol


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    FMMT449 OT-23 100mA 200mA 500mA, 100MHz FMMT449 SMD TRANSISTOR MARKING 2A TRANSISTOR SMD 1a 9 MARKING 449 PDF

    transistor marking 2A H

    Abstract: npn transistor footprint 449 SOT23 NPN TRANSISTOR BL 100 NPN medium power transistor in a SOT package marking code 1A transistor 2A transistor SOT-23 SOT23 transistor 2A transistor npn 2A sot 23 TRANSISTOR BL 100
    Text: BL Galaxy Electrical Production specification NPN Silicon Planar Medium Power Transistor FEATURES z Pb Low equivalent on-resistance,RCE sat : Lead-free 250mΩ at 1A. z FMMT449 Complementary To FMMT549. APPLICATIONS z NPN silicon planar medium power transistor.


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    FMMT449 FMMT549. OT-23 BL/SSSTC051 transistor marking 2A H npn transistor footprint 449 SOT23 NPN TRANSISTOR BL 100 NPN medium power transistor in a SOT package marking code 1A transistor 2A transistor SOT-23 SOT23 transistor 2A transistor npn 2A sot 23 TRANSISTOR BL 100 PDF

    993 395 pnp npn

    Abstract: bc237 smd sot23 package transistor TO-92 bc108 TRANSISTOR BC337 SMD 702 TRANSISTOR smd SOT23 2PB601AQ BC548 TRANSISTOR SMD bc548 TO-92 Bd135 smd 2PC945Q
    Text: SELECTION GUIDE NPN PNP NPN/PNP NPN PNP Leaded Leaded SMD SMD SMD page page page page page General purpose amplification and switching transistors Low-power transistors 2 5 – 23 26 Transistor arrays 7 – 29 29 29 Medium-power transistors 8 9 – 30 31 10


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    BRY61 BRY62 OT143B 993 395 pnp npn bc237 smd sot23 package transistor TO-92 bc108 TRANSISTOR BC337 SMD 702 TRANSISTOR smd SOT23 2PB601AQ BC548 TRANSISTOR SMD bc548 TO-92 Bd135 smd 2PC945Q PDF

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# FMMT449 Features Halogen free available upon request by adding suffix "-HF" Lead Free Finish/RoHS Compliant "P" Suffix designates


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    FMMT449 PDF

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# FMMT449 Features Halogen free available upon request by adding suffix "-HF" Lead Free Finish/RoHS Compliant "P" Suffix designates


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    FMMT449 PDF

    XP151A02B0MR

    Abstract: No abstract text available
    Text: XP151A02B0MR Power MOS FET ◆ N-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance: 0.2Ω MAX ◆ Ultra High-Speed Switching ◆ SOT-23 Package • Applications ■ General Description ■ Features The XP151A02B0MR is a N-Channel Power MOS FET with low on-state


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    XP151A02B0MR OT-23 XP151A02B0MR OT-23 PDF

    Untitled

    Abstract: No abstract text available
    Text: SOT23 NPN SILICON PLANAR M ED IU M POWER TRANSISTOR I FMMT449 ISSU E 3 - NOVEM BER 1995_ FEATURES * Low equivalent on-resistance; RCE sat! 250mii at 1A C O M PLEM EN TARY TYPE PARTMARKING DETAIL - FMMT549 449 ABSOLUTE M A X IM U M RATINGS.


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    FMMT449 250mii FMMT549 cto40V, 300ns. PDF

    Untitled

    Abstract: No abstract text available
    Text: SOT23 NPN SILICON PLANAR M ED IU M POWER TRANSISTOR ISSU E 3 - NOVEM BER 1995 FEATURES * Low equivalent on-resistance; RcE Mt 250m Q at 1A E COM PLEM ENTARY T Y P E P A R T M A R K IN G D E T A IL - FM M T549 449 ABSOLUTE M A X IM U M RATINGS. PARAM ETER


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    FMMT449 PDF

    HSMP3811

    Abstract: sot-23 MARKING CODE G1 HSMP3821 HSMP-3801 HSMP3831 HSMP3881 HSMP-3811 hsmp-3831 hsmp3801 HSMP-3881
    Text: Surface Mount PIN Diodes Available Configurations SOT-23 DIE APPLICATION GUSS SINGLE SINGLE SERIES COMMON ANODE b R B / o HPNWXJ01 HPND-0002 HPND-0003 5082-0012 tr 'a S' X - ll XX ht-ir là ' COMMON CATHODE LOW LOW INDUCTANCE INDUCTANCE B a Il XX '- á -Ir 1


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    OT-23 HPNWXJ01 HSMP-3802 HSMP-3812 HSMP-3800 HSMP-3801 HSMP-3810 HSMP-3811 HSMP-3820 HSMP-3821 HSMP3811 sot-23 MARKING CODE G1 HSMP3821 HSMP3831 HSMP3881 hsmp-3831 hsmp3801 HSMP-3881 PDF

    Untitled

    Abstract: No abstract text available
    Text: www.fairchildsem i.com S E M I C O N D U C T O R tm RC431A Low -V oltage A d ju s t a b le Precision Shunt Regu lator Features Description • • • • • • The RC431A is a low-voltage 3-terminal adjustable preci­ sion voltage reference regulator. It has an excellent thermal


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    RC431A RC431A DS3000431 PDF

    diode marking 53

    Abstract: marking VB DIODE
    Text: SIEMENS BBY 53 Silicon Tuning Diode Preliminary data • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation for VCO's in mobile communications equipment • High ratio at low reverse voltage Type Marking Ordering Code Pin Configuration


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    Q62702-B824 OT-23 diode marking 53 marking VB DIODE PDF

    Untitled

    Abstract: No abstract text available
    Text: KSR2113 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built in SOT-23 • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R, =2.2kC, R2=47kQ) • Complement to KSR1113 ABSOLUTE MAXIMUM RATINGS (TA=25t:)


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    KSR2113 KSR1113 OT-23 -100M -10mA, -10mA PDF

    transistor marking code 443

    Abstract: Transistor C3E marking code C3E SOT-89 MARKING CODE C3E
    Text: Central“ CMPTH10 Semiconductor Corp. NPN SILICON RF TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTH10 type is an NPN silicon RF transistor manufac­ tured by the epitaxial planar process, epoxy molded in a surface mount package, designed for low noise UHF/VHF amplifier and high output


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    CMPTH10 OT-23 CP302 26-September OT-23 transistor marking code 443 Transistor C3E marking code C3E SOT-89 MARKING CODE C3E PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS Silicon Switching Diode Array BAV 99 Features • For high-speed switching • Connected in series Type Marking Ordering Code tape and reel BAV 99 A7s Q68000-A549 Pin Configuration Package1) 3 i - y - L SOT-23 y - i OM07005 Maximum Ratings per Diode


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    Q68000-A549 OT-23 OM07005 fl535b05 BAV99 H35b05 0535bQ5 PDF

    pn4393

    Abstract: PN4391 equivalent PN4392 equivalent
    Text: PN4391 SERIES N-Channel JFETs The PN4391 Series is the plastic equivalent of our popular 2N4391 Series. These devices are especially well suited for analog switching applications but function efficiently as high-gain amplifiers, particularly at high-frequency. Our low-cost TO-92 packaging


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    PN4391 2N4391 PN4392 PN4393 O-226AA) VIEW16 pn4393 PN4391 equivalent PN4392 equivalent PDF

    pm2222a

    Abstract: SOD80C PHILIPS BCB47B 1N4148 SOD80C PMBTA64 PXTA14 BF960 FET BFW11 BF345C BC558B PHILIPS
    Text: Philips Semiconductors Index Surface Mounted Semiconductors Alphanumeric index: types added to the range since the last issue of handbook SC10 1991 issue are shown in bold print. TYPE NUMBER PACKAGE NEAREST CONVENTIONAL TYPE(S) DEVICE TYPE PAGE COMPLEMENT


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    BA582 OD123 BA482 BA682 BA683 BA483 BAL74 BAW62, 1N4148 pm2222a SOD80C PHILIPS BCB47B 1N4148 SOD80C PMBTA64 PXTA14 BF960 FET BFW11 BF345C BC558B PHILIPS PDF

    BCW31

    Abstract: BCW32 BCW33 IEC134 7Z6a ScansUX40 J 449
    Text: 7 1 1 0 0 2 b []0bfl533 STÛ BCW31 BCW32 BCW33 IPHIN A SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in a microminiature plastic envelope. They are intended fo r low level general purpose applications in thick and thin-film circuits. QUICK REFERENCE DATA


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    711002b 0DbflS33 BCW31 BCW32 BCW33 BCW33 IEC134 7Z6a ScansUX40 J 449 PDF

    Untitled

    Abstract: No abstract text available
    Text: • BCW31 BCW32 BCW33 bhS3T31 0Q245b7 114 « A P X N AUER PHILIPS/DISCRETE b?E D SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in a microminiature plastic envelope. They are intended for low level general purpose applications in thick and thin-film circuits.


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    BCW31 BCW32 BCW33 bhS3T31 0Q245b7 PDF