Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors FMMT449 TRANSISTOR NPN SOT–23 FEATURES Low Equivalent On-Resistance MARKING: 449 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter 1. BASE Value
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OT-23
FMMT449
500mA
100mA
200mA
100MHz
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BUZ90af
Abstract: hv82 MGF4919G-01 MGF4919G MGF2407A-01 BUZ80AF1 6n60 MGF1302-15 SSP 50N06 2n10l
Text: МИКРОСХЕМЫ 1 ПОЛЕВЫЕ ТРАНЗИСТОРЫ ИМПОРТНЫЕ Наименование 2SJ 103 2SJ 200 2SJ 306 2SJ 307 2SJ 449 2SJ 79 2SK 1023 2SK 1058 2SK 1060 2SK 107 2SK 1082 2SK 1102 2SK 1117 2SK 1118 2SK 1120 2SK 1162 2SK 118 2SK 1198
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O-251AA
O-247AC
O-220AB
PowerSO-20
BUZ90af
hv82
MGF4919G-01
MGF4919G
MGF2407A-01
BUZ80AF1
6n60
MGF1302-15
SSP 50N06
2n10l
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Untitled
Abstract: No abstract text available
Text: SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR FMMT449 ISSUE 3 - NOVEMBER 1995 FEATURES * Low equivalent on-resistance; RCE sat 250mΩ at 1A 0.8 tf,tr,td IB1=IB2=IC/10 ns VCE=10V COMPLEMENTARY TYPE PARTMARKING DETAIL 150 IC/IB=10 0.6 E C FMMT549
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FMMT449
IC/10
FMMT549
100ms
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25 V 500mA TRANSISTOR SOT23
Abstract: FMMT449 FMMT549 DSA003694
Text: FMMT449 tf,tr,td IB1=IB2=IC/10 ns VCE=10V COMPLEMENTARY TYPE PARTMARKING DETAIL IC/IB=10 0.4 0.2 0.001 0.01 tr 800 td 0.1 50 ts 400 tf tr 200 td 10 1 ABSOLUTE MAXIMUM RATINGS. 600 0.01 0.1 1 I+ - Collector Current Amps VCE(sat) v IC Switching Speeds
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FMMT449
IC/10
FMMT549
500mA,
100mHz
25 V 500mA TRANSISTOR SOT23
FMMT449
FMMT549
DSA003694
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PDF
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25 V 500mA TRANSISTOR SOT23
Abstract: FMMT449 FMMT549 08 sot23
Text: FMMT449 tf,tr,td IB1=IB2=IC/10 ns VCE=10V COMPLEMENTARY TYPE PARTMARKING DETAIL IC/IB=10 0.4 0.2 0.001 0.01 tr 800 td 0.1 50 ts 400 tf tr 200 td 10 1 ABSOLUTE MAXIMUM RATINGS. 600 0.01 0.1 1 I+ - Collector Current Amps VCE(sat) v IC Switching Speeds
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Original
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FMMT449
IC/10
FMMT549
500mA,
100mHz
25 V 500mA TRANSISTOR SOT23
FMMT449
FMMT549
08 sot23
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Untitled
Abstract: No abstract text available
Text: Transistors IC SMD Type Product specification FMMT449 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 Low equivalent on-resistance. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 Absolute Maximum Ratings Ta = 25 Parameter Symbol
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FMMT449
OT-23
100mA
200mA
500mA,
100MHz
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FMMT449
Abstract: SMD TRANSISTOR MARKING 2A TRANSISTOR SMD 1a 9 MARKING 449
Text: Transistors IC SMD Type Medium Power Transistor FMMT449 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 Low equivalent on-resistance. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 Absolute Maximum Ratings Ta = 25 Parameter Symbol
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Original
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FMMT449
OT-23
100mA
200mA
500mA,
100MHz
FMMT449
SMD TRANSISTOR MARKING 2A
TRANSISTOR SMD 1a 9
MARKING 449
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transistor marking 2A H
Abstract: npn transistor footprint 449 SOT23 NPN TRANSISTOR BL 100 NPN medium power transistor in a SOT package marking code 1A transistor 2A transistor SOT-23 SOT23 transistor 2A transistor npn 2A sot 23 TRANSISTOR BL 100
Text: BL Galaxy Electrical Production specification NPN Silicon Planar Medium Power Transistor FEATURES z Pb Low equivalent on-resistance,RCE sat : Lead-free 250mΩ at 1A. z FMMT449 Complementary To FMMT549. APPLICATIONS z NPN silicon planar medium power transistor.
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FMMT449
FMMT549.
OT-23
BL/SSSTC051
transistor marking 2A H
npn transistor footprint
449 SOT23
NPN TRANSISTOR BL 100
NPN medium power transistor in a SOT package
marking code 1A transistor
2A transistor SOT-23
SOT23 transistor 2A
transistor npn 2A sot 23
TRANSISTOR BL 100
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993 395 pnp npn
Abstract: bc237 smd sot23 package transistor TO-92 bc108 TRANSISTOR BC337 SMD 702 TRANSISTOR smd SOT23 2PB601AQ BC548 TRANSISTOR SMD bc548 TO-92 Bd135 smd 2PC945Q
Text: SELECTION GUIDE NPN PNP NPN/PNP NPN PNP Leaded Leaded SMD SMD SMD page page page page page General purpose amplification and switching transistors Low-power transistors 2 5 – 23 26 Transistor arrays 7 – 29 29 29 Medium-power transistors 8 9 – 30 31 10
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BRY61
BRY62
OT143B
993 395 pnp npn
bc237 smd sot23 package
transistor TO-92 bc108
TRANSISTOR BC337 SMD
702 TRANSISTOR smd SOT23
2PB601AQ
BC548 TRANSISTOR SMD
bc548 TO-92
Bd135 smd
2PC945Q
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Untitled
Abstract: No abstract text available
Text: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# FMMT449 Features Halogen free available upon request by adding suffix "-HF" Lead Free Finish/RoHS Compliant "P" Suffix designates
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FMMT449
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Untitled
Abstract: No abstract text available
Text: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# FMMT449 Features Halogen free available upon request by adding suffix "-HF" Lead Free Finish/RoHS Compliant "P" Suffix designates
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FMMT449
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XP151A02B0MR
Abstract: No abstract text available
Text: XP151A02B0MR Power MOS FET ◆ N-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance: 0.2Ω MAX ◆ Ultra High-Speed Switching ◆ SOT-23 Package • Applications ■ General Description ■ Features The XP151A02B0MR is a N-Channel Power MOS FET with low on-state
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Original
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XP151A02B0MR
OT-23
XP151A02B0MR
OT-23
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Untitled
Abstract: No abstract text available
Text: SOT23 NPN SILICON PLANAR M ED IU M POWER TRANSISTOR I FMMT449 ISSU E 3 - NOVEM BER 1995_ FEATURES * Low equivalent on-resistance; RCE sat! 250mii at 1A C O M PLEM EN TARY TYPE PARTMARKING DETAIL - FMMT549 449 ABSOLUTE M A X IM U M RATINGS.
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OCR Scan
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FMMT449
250mii
FMMT549
cto40V,
300ns.
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PDF
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Untitled
Abstract: No abstract text available
Text: SOT23 NPN SILICON PLANAR M ED IU M POWER TRANSISTOR ISSU E 3 - NOVEM BER 1995 FEATURES * Low equivalent on-resistance; RcE Mt 250m Q at 1A E COM PLEM ENTARY T Y P E P A R T M A R K IN G D E T A IL - FM M T549 449 ABSOLUTE M A X IM U M RATINGS. PARAM ETER
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OCR Scan
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FMMT449
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PDF
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HSMP3811
Abstract: sot-23 MARKING CODE G1 HSMP3821 HSMP-3801 HSMP3831 HSMP3881 HSMP-3811 hsmp-3831 hsmp3801 HSMP-3881
Text: Surface Mount PIN Diodes Available Configurations SOT-23 DIE APPLICATION GUSS SINGLE SINGLE SERIES COMMON ANODE b R B / o HPNWXJ01 HPND-0002 HPND-0003 5082-0012 tr 'a S' X - ll XX ht-ir là ' COMMON CATHODE LOW LOW INDUCTANCE INDUCTANCE B a Il XX '- á -Ir 1
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OCR Scan
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OT-23
HPNWXJ01
HSMP-3802
HSMP-3812
HSMP-3800
HSMP-3801
HSMP-3810
HSMP-3811
HSMP-3820
HSMP-3821
HSMP3811
sot-23 MARKING CODE G1
HSMP3821
HSMP3831
HSMP3881
hsmp-3831
hsmp3801
HSMP-3881
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PDF
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Untitled
Abstract: No abstract text available
Text: www.fairchildsem i.com S E M I C O N D U C T O R tm RC431A Low -V oltage A d ju s t a b le Precision Shunt Regu lator Features Description • • • • • • The RC431A is a low-voltage 3-terminal adjustable preci sion voltage reference regulator. It has an excellent thermal
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OCR Scan
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RC431A
RC431A
DS3000431
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PDF
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diode marking 53
Abstract: marking VB DIODE
Text: SIEMENS BBY 53 Silicon Tuning Diode Preliminary data • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation for VCO's in mobile communications equipment • High ratio at low reverse voltage Type Marking Ordering Code Pin Configuration
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OCR Scan
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Q62702-B824
OT-23
diode marking 53
marking VB DIODE
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PDF
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Untitled
Abstract: No abstract text available
Text: KSR2113 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built in SOT-23 • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R, =2.2kC, R2=47kQ) • Complement to KSR1113 ABSOLUTE MAXIMUM RATINGS (TA=25t:)
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OCR Scan
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KSR2113
KSR1113
OT-23
-100M
-10mA,
-10mA
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transistor marking code 443
Abstract: Transistor C3E marking code C3E SOT-89 MARKING CODE C3E
Text: Central“ CMPTH10 Semiconductor Corp. NPN SILICON RF TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTH10 type is an NPN silicon RF transistor manufac tured by the epitaxial planar process, epoxy molded in a surface mount package, designed for low noise UHF/VHF amplifier and high output
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OCR Scan
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CMPTH10
OT-23
CP302
26-September
OT-23
transistor marking code 443
Transistor C3E
marking code C3E SOT-89
MARKING CODE C3E
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS Silicon Switching Diode Array BAV 99 Features • For high-speed switching • Connected in series Type Marking Ordering Code tape and reel BAV 99 A7s Q68000-A549 Pin Configuration Package1) 3 i - y - L SOT-23 y - i OM07005 Maximum Ratings per Diode
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OCR Scan
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Q68000-A549
OT-23
OM07005
fl535b05
BAV99
H35b05
0535bQ5
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PDF
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pn4393
Abstract: PN4391 equivalent PN4392 equivalent
Text: PN4391 SERIES N-Channel JFETs The PN4391 Series is the plastic equivalent of our popular 2N4391 Series. These devices are especially well suited for analog switching applications but function efficiently as high-gain amplifiers, particularly at high-frequency. Our low-cost TO-92 packaging
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OCR Scan
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PN4391
2N4391
PN4392
PN4393
O-226AA)
VIEW16
pn4393
PN4391 equivalent
PN4392 equivalent
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PDF
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pm2222a
Abstract: SOD80C PHILIPS BCB47B 1N4148 SOD80C PMBTA64 PXTA14 BF960 FET BFW11 BF345C BC558B PHILIPS
Text: Philips Semiconductors Index Surface Mounted Semiconductors Alphanumeric index: types added to the range since the last issue of handbook SC10 1991 issue are shown in bold print. TYPE NUMBER PACKAGE NEAREST CONVENTIONAL TYPE(S) DEVICE TYPE PAGE COMPLEMENT
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OCR Scan
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BA582
OD123
BA482
BA682
BA683
BA483
BAL74
BAW62,
1N4148
pm2222a
SOD80C PHILIPS
BCB47B
1N4148 SOD80C
PMBTA64
PXTA14
BF960
FET BFW11
BF345C
BC558B PHILIPS
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PDF
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BCW31
Abstract: BCW32 BCW33 IEC134 7Z6a ScansUX40 J 449
Text: 7 1 1 0 0 2 b []0bfl533 STÛ BCW31 BCW32 BCW33 IPHIN A SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in a microminiature plastic envelope. They are intended fo r low level general purpose applications in thick and thin-film circuits. QUICK REFERENCE DATA
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OCR Scan
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711002b
0DbflS33
BCW31
BCW32
BCW33
BCW33
IEC134
7Z6a
ScansUX40
J 449
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PDF
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Untitled
Abstract: No abstract text available
Text: • BCW31 BCW32 BCW33 bhS3T31 0Q245b7 114 « A P X N AUER PHILIPS/DISCRETE b?E D SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in a microminiature plastic envelope. They are intended for low level general purpose applications in thick and thin-film circuits.
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OCR Scan
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BCW31
BCW32
BCW33
bhS3T31
0Q245b7
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PDF
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