44N50P Search Results

44N50P Price and Stock

Filter by Manufacturer


Littelfuse Inc IXFH44N50P MOSFET N-CH 500V 44A TO247AD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFH44N50P	Tube	291		1	1 $13.36 10 $13.36 100 $8.104 1000 $6.71875 10000 $6.71875	Buy Now
Newark	IXFH44N50P	Bulk			300	1 - 10 - 100 - 1000 $7.05 10000 $7.05	Buy Now
RS	IXFH44N50P	Bulk		8 Weeks	30	1 - 10 - 100 $10.39 1000 $10.39 10000 $10.39	Get Quote
Littelfuse Inc IXFR44N50P MOSFET N-CH 500V 24A ISOPLUS247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFR44N50P	Tube	289		1	1 $11.41 10 $11.41 100 $8.63567 1000 $8.63567 10000 $8.63567	Buy Now
Newark	IXFR44N50P	Bulk			300	1 - 10 - 100 - 1000 $9.05 10000 $9.05	Buy Now
RS	IXFR44N50P	Bulk		8 Weeks	30	1 - 10 - 100 $13.36 1000 $13.36 10000 $13.36	Get Quote
Littelfuse Inc IXFK44N50P MOSFET N-CH 500V 44A TO264AA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFK44N50P	Tube	260		1	1 $12.39 10 $12.39 100 $12.39 1000 $12.39 10000 $12.39	Buy Now
RS	IXFK44N50P	Bulk		8 Weeks	25	1 - 10 - 100 $11.2 1000 $11.2 10000 $11.2	Get Quote
Littelfuse Inc IXFT44N50P MOSFET N-CH 500V 44A TO268
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFT44N50P	Tube			1	1 $13.87 10 $13.87 100 $8.441 1000 $7.05375 10000 $7.05375	Buy Now
Newark	IXFT44N50P	Bulk			300	1 - 10 - 100 - 1000 $7.4 10000 $7.4	Buy Now
Littelfuse Inc IXTQ44N50P MOSFET N-CH 500V 44A TO3P
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXTQ44N50P	Tube			300	1 - 10 - 100 - 1000 $6.49537 10000 $6.49537	Buy Now
Newark	IXTQ44N50P	Bulk			300	1 - 10 - 100 - 1000 $6.81 10000 $6.81	Buy Now

Find more 44N50P price and stock on Findchips.com

44N50P Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
44N50 Abstract: No abstract text available Text: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFR 44N50P VDSS ID25 RDS on ISOPLUS247TM trr N-Channel Enhancement ModeAvalanche Rated Fast Intrinsic Diode = 500 V = 24 A Ω < 150 mΩ < 200 ns (Electrically Isolated Back Surface) Symbol Test Conditions	Original	ISOPLUS247TM 44N50P 405B2 44N50	PDF
44N50P Abstract: ISOPLUS247 Text: PolarHVTM HiPerFET Power MOSFET IXFR 44N50P VDSS ID25 RDS on ISOPLUS247TM trr (Electrically Isolated Back Surface) = = ≤ ≤ 500 V 24 A 150 m Ω 200 ns N-Channel Enhancement Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS	Original	44N50P ISOPLUS247TM 03-21-06-B 44N50P ISOPLUS247	PDF
44n50 Abstract: 44N50P IXFH44N50P Text: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFH 44N50P IXFT 44N50P IXFK 44N50P VDSS ID25 RDS on trr N-Channel Enhancement ModeAvalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ	Original	44N50P 405B2 IXFH44N50P 44n50 44N50P	PDF
Untitled Abstract: No abstract text available Text: PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH 44N50P IXFK 44N50P IXFT 44N50P = 500 V = 44 A Ω ≤ 140 mΩ ≤ 200 ns VDSS ID25 RDS on trr TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS	Original	44N50P O-247 O-264 IXFH44N50P 03-21-06-B	PDF
Untitled Abstract: No abstract text available Text: PolarHVTM Power MOSFET IXTQ 44N50P VDSS ID25 RDS on = 500 V = 44 A Ω ≤ 140 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ 500 500 V V VGS VGSM	Original	44N50P 03-21-06-B	PDF
IXFH44N50P Abstract: 44n50p ixfh 44n50p C4455 IXFK44N50P Text: PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH 44N50P IXFK 44N50P IXFT 44N50P RDS on trr Symbol Test Conditions VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 500 500 V V VGSM VGSM	Original	44N50P O-247 IXFH44N50P 03-21-06-B 44n50p ixfh 44n50p C4455 IXFK44N50P	PDF
Untitled Abstract: No abstract text available Text: Advance Technical Information PolarHVTM Power MOSFET IXTQ 44N50P VDSS ID25 RDS on = 500 V = 44 A Ω < 140 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ	Original	44N50P 405B2	PDF
44N50P Abstract: No abstract text available Text: Advance Technical Information PolarHVTM Power MOSFET IXTQ 44N50P VDSS ID25 RDS on = 500 V = 44 A Ω < 140 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ	Original	44N50P 405B2 44N50P	PDF
Untitled Abstract: No abstract text available Text: PolarHVTM HiPerFET Power MOSFET IXFR 44N50P VDSS ID25 RDS on ISOPLUS247TM trr (Electrically Isolated Back Surface) = = ≤ ≤ 500 V 24 A 150 m Ω 200 ns N-Channel Enhancement Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS	Original	44N50P ISOPLUS247TM 03-21-06-B	PDF
44N50 Abstract: 44N50P IXTQ Text: PolarHVTM Power MOSFET IXTQ 44N50P VDSS ID25 RDS on = 500 V = 44 A ≤ 140 mΩ Ω N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ 500 500 V V VGS VGSM	Original	44N50P 03-21-06-B 44N50 44N50P IXTQ	PDF
2n60p Abstract: gsm based speed control of single phase induction motor thyristor family 48N60 600v 20 amp mosfet 14n60 300V HiPerFET power MOSFET single die MOSFET Wireless A.C motor speed controlling system IXYS SCR MODULE Gate Drive 15N60P Text: 2005 / 1 IXYS NEWS MSC IGBT Module Line to include Economical Small 6Pack Incorporating Latest NPT3 and Trench IGBT Technologies IXYS announced that in keeping up with ambitious growth plans in the IGBT market, its European Operation, a leader in Direct Copper Bond	Original	IXFR48N60P 18N60P 30N60P 22N60P 36N60P 26N60P 48N60P PLUS220 IXTV22N50PS. 2n60p gsm based speed control of single phase induction motor thyristor family 48N60 600v 20 amp mosfet 14n60 300V HiPerFET power MOSFET single die MOSFET Wireless A.C motor speed controlling system IXYS SCR MODULE Gate Drive 15N60P	PDF
7N60B equivalent Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches	Original	MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2	PDF
STW20N60 Abstract: 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p Text: PolarHTTM 55V to 300V Standard Power MOSFETs Benefits of Polar HTTM and Polar HVTM This new “Polar” technology platform utilizes a patented proprietary cell design, as well as numerous process improvements that reduce RDS(on) by over 30% per unit area, while also reducing Qg by an equal	Original	O-220, ISOPLUS220TM, O-247, ISOPLUS247TM, O-264, ISOPLUS264TM. PLUS220 ISOPLUS220TM PLUS220SMD O-252 STW20N60 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p	PDF

Privacy Settings

44N50P Search Results

44N50P Price and Stock

Littelfuse Inc IXFH44N50P

Littelfuse Inc IXFR44N50P

Littelfuse Inc IXFK44N50P

Littelfuse Inc IXFT44N50P

Littelfuse Inc IXTQ44N50P

44N50P Datasheets Context Search

44N50

44N50P

44n50

Untitled

Untitled

IXFH44N50P

Untitled

44N50P

Untitled

44N50

2n60p

7N60B equivalent

STW20N60