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    45-NM CMOS STANDARD CELL LIBRARY PROCESS TECHNOLOGY Search Results

    45-NM CMOS STANDARD CELL LIBRARY PROCESS TECHNOLOGY Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMP89FS60BFG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1414-0.80-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP52-1010-0.65-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS62BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP44-1010-0.80-003 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS60BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1010-0.50-003 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FM82DUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP48-P-0707-0.50D Visit Toshiba Electronic Devices & Storage Corporation

    45-NM CMOS STANDARD CELL LIBRARY PROCESS TECHNOLOGY Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    180-nm CMOS standard cell library inverter

    Abstract: 130 nm CMOS standard cell library 45-nm CMOS standard cell library process technology 45 nm library CS200A 130nm 130-nm CMOS standard cell library inverter S/130 nm CMOS standard cell library SEM 2006 CS201
    Text: Fujitsu @ 65nm: Providing Solutions through Integrated Design Services The Fujitsu Advantage…Not Just a Foundry Contents „ „ „ Benefits of leading-edge technology at 65nm Challenges Solutions Fujitsu Microelectronics America, Inc. 2 FSA Semiconductor Forum, June 14, 2006


    Original     		130nm 180-nm CMOS standard cell library inverter 130 nm CMOS standard cell library 45-nm CMOS standard cell library process technology 45 nm library CS200A 130-nm CMOS standard cell library inverter S/130 nm CMOS standard cell library SEM 2006 CS201 PDF

    k941

    Abstract: k 941 CMGS nec asic product letter sequential CIRCUIT nec ddr nec cb cell product letter
    Text: ISSP/150 nm ASIC Technology ISSP1 - Standard Family Product Letter Description NEC‘s Instant Silicon Solution Platform ISSP is an ASIC architecture, that offers high system performance – up to 150 MHz system frequency and up to 250 MHz for local areas – in 0.13 µm (drawn) gate length technology at low NRE. ISSP


    Original     		ISSP/150 lines5030 A16448EE5V0PL00 k941 k 941 CMGS nec asic product letter sequential CIRCUIT nec ddr nec cb cell product letter PDF

    MOS RM3

    Abstract: mos rm3 data XO035 Silicon Image 1364 cmos transistor 0.35 um analog devices transistor tutorials "X-Fab" Core cell library 6E-08 opto mos application ESD "p-well" n-well"
    Text: 0.35 µm CMOS Process Family XO035 MIXED-SIGNAL FOUNDRY EXPERTS 0.35 Micron Modular CMOS Technology For Fast Optical Applications Description XO035 is X-FAB’s specialized process for optoelectronic and high speed RF applications. It is especially suited for applications needing


    Original     		XO035 XO035 35micron MOS RM3 mos rm3 data Silicon Image 1364 cmos transistor 0.35 um analog devices transistor tutorials "X-Fab" Core cell library 6E-08 opto mos application ESD "p-well" n-well" PDF

    CMOS

    Abstract: hv 102 mos fet transistor varactor diode model in ADS bsim3 ADS varactor diode 0.18 micron 1.8V pspice model BSIM3V3 bsim3 model bsim3 model for 0.18 micron technology for hspice N-Channel jfet 100V depletion
    Text: 0.6 m CMOS Process XC06 MIXED-SIGNAL FOUNDRY EXPERTS 0.6 Micron Modular Mixed Signal Technology Description Key Features The XC06 Series completes X-FAB‘s 0.6 Micron Modular Mixed Signal Technology with embedded Non Volatile Memory and High Voltage options.


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    TOSHIBA TC160

    Abstract: TC300C TC260 TOSHIBA standard cell library 130 nm CMOS standard cell library toshiba TC200G 90 nm CMOS Cell-based ASIC TC223C TC280 TC203G/E
    Text: Semi-Custom ICs CMOS Gate Array Series CMOS Cell-Based IC Series CMOS Embedded Array Series 62 62 63 57 To ensure competitiveness in the marketplace, companies need to produce more sophisticated, more technology-intensive and higher value-added models, using technological innovation and


    Original     		TC260E. TOSHIBA TC160 TC300C TC260 TOSHIBA standard cell library 130 nm CMOS standard cell library toshiba TC200G 90 nm CMOS Cell-based ASIC TC223C TC280 TC203G/E PDF

    MOS RM3

    Abstract: No abstract text available
    Text: 0.35 µm CMOS Process Family XO035 MIXED-SIGNAL FOUNDRY EXPERTS 0.35 Micron Modular CMOS Technology For Fast Optical Applications Description XO035 is X-FAB’s specialized process for optoelectronic and high speed RF applications. It is especially suited for applications needing


    Original     		XO035 XO035 35-micron MOS RM3 PDF

    Untitled

    Abstract: No abstract text available
    Text: 0.6 µm BiCMOS Process Family XB06 MIXED-SIGNAL FOUNDRY EXPERTS 0.6 Micron Modular BiCMOS Technology Description The XB06 Series is X-FAB‘s 0.6 Micron BiCMOS Technology. Main target applications are RF circuits and high precision analog applications mixed with


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    toshiba Transistors catalog

    Abstract: TC200 TC220C TC220E TC280 TC280C toshiba semiconductor catalog tc190c TC223G 65-nm CMOS standard cell library process technology
    Text: SEMICONDUCTOR GENERAL CATALOG ASICs CMOS Gate Array Series CMOS Cell-Based IC Series CMOS Embedded Array Series 1 2011/9 SCE0004L To ensure competitiveness in the marketplace, companies need to produce more sophisticated, more technology-intensive and higher value-added models, using technological innovation and


    Original     		SCE0004L toshiba Transistors catalog TC200 TC220C TC220E TC280 TC280C toshiba semiconductor catalog tc190c TC223G 65-nm CMOS standard cell library process technology PDF

    0.18-um CMOS technology characteristics

    Abstract: TC190G ASIC-TC223 toshiba TC200 tc190c toshiba Single Gates logic CMOS GATE ARRAYs toshiba TC300C 130 nm CMOS standard cell library Toshiba TC200
    Text: SEMICONDUCTOR GENERAL CATALOG ASICs CMOS Gate Array Series CMOS Cell-Based IC Series CMOS Embedded Array Series 1 2010/9 SCE0004K To ensure competitiveness in the marketplace, companies need to produce more sophisticated, more technology-intensive and higher value-added models, using technological innovation and


    Original     		2010/9SCE0004K 0.18-um CMOS technology characteristics TC190G ASIC-TC223 toshiba TC200 tc190c toshiba Single Gates logic CMOS GATE ARRAYs toshiba TC300C 130 nm CMOS standard cell library Toshiba TC200 PDF

    TOSHIBA TC160

    Abstract: 0.18-um CMOS technology characteristics TOSHIBA TC170 ASIC-TC223 TC280C TC200 TC220C TC220E TC280 TC190G
    Text: SEMICONDUCTOR GENERAL CATALOG ASICs CMOS Gate Array Series CMOS Cell-Based IC Series CMOS Embedded Array Series 1 2009-8 SCE0004I To ensure competitiveness in the marketplace, companies need to produce more sophisticated, more technology-intensive and higher value-added models, using technological innovation and


    Original     		SCE0004I TOSHIBA TC160 0.18-um CMOS technology characteristics TOSHIBA TC170 ASIC-TC223 TC280C TC200 TC220C TC220E TC280 TC190G PDF

    Fabrication process steps

    Abstract: advanced technology in embedded projects OC-768 edram dram structure edram nec 130 nm CMOS standard cell library
    Text: NEW ASIC PROCESS TECHNOLOGY MAKES EMBEDDED DRAM PRACTICAL CHOICE FOR HIGH-PERFORMANCE APPLICATIONS February 2003 The advantages of embedding large blocks of memory into a system-on-a-chip SoC ASIC have become increasingly clear in the face of growing performance demands for many


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    MPC601

    Abstract: MC6800 MC68000 MC68020 MPC7455 MPC860 MC603 90-nm CMOS standard cell library process technology 65-nm CMOS standard cell library process technology
    Text: Freescale Semiconductor ASIC Solutions Scalability Meets Flexibility. Flexible Customer Engagement Model A hallmark of Freescale’s ASIC capability is our flexible customer engagement model and design flow. We support the use of industry-standard tools for conformance with customer


    Original     		MPC601, MPC860 MPC7455 BR1587 MPC601 MC6800 MC68000 MC68020 MC603 90-nm CMOS standard cell library process technology 65-nm CMOS standard cell library process technology PDF

    ASX 12 D Germanium Transistor

    Abstract: 1394 audio subunit domino logic,dynamic logic ibm 6X86MX IBM-6x86MX Japan dvd cjc Transistor Data Book nand flash HET PR333 PR300 APPLE LM INVERTER
    Text: v ol 4 3 ume A publication of IBM Microelectronics IBM’s Blue Logic Strategy In This Issue Third Quarter 1998, Vol. 4, No.3 1 IBM’s Blue Logic Strategy 4 High-Speed Design Styles Leverage IBM Technology Prowess 8 Low-Power Methodology and Design Techniques


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    integrated circuit TL 2262

    Abstract: PT6042 180 nm CMOS standard cell library Synopsys compass ic ND02D2 0.03 um CMOS technology VSC470
    Text: V L S I TECHNOLOGY INC M7E D VTI V L S I T ech n o lo g y , in c . T - m PRELIMINARY - m VSC470 SERIES 0.8-MICRON HIGH-DENSITY STANDARD CELL LIBRARY FEATURES • Advanced 0.7-micron channel length, 0.8-micron drawn gate length silicon gate CMOS technology


    OCR Scan     		VSC470 integrated circuit TL 2262 PT6042 180 nm CMOS standard cell library Synopsys compass ic ND02D2 0.03 um CMOS technology PDF

    full subtractor circuit using decoder and nand ga

    Abstract: PLESSEY CLA LC28 full adder 2 bit ic GP144
    Text: RUG 1 .6 'M 1992 GEC PLESS EY . AUGUST 1992 S E M I C O N D U C T O R S CLA70000 SERIES HIGH DENSITY CMOS GATE ARRAYS S u p e rs e d e s M a rc h 1 9 9 2 ed itio n Recent advances in CMOS processing technology and im provem ents in design a rch ite ctu re have led to the


    OCR Scan     		CLA70000 full subtractor circuit using decoder and nand ga PLESSEY CLA LC28 full adder 2 bit ic GP144 PDF

    0.5 MIETEC CMOS

    Abstract: No abstract text available
    Text: M T C - 2 0 1 0 C M O S 2 \l Standard Cell Library Services C M O S Family Product Description Features • Technology: C M O S 2 channel length, silicon gal« , lo w o r high ohmic d o u b U poly, double metal • Typical G a t* Delay: LS TTL compatible, 2.0 n*


    OCR Scan     		1204x744 DA081 600x816 MTC-2010 0.5 MIETEC CMOS PDF

    ATT65630

    Abstract: 65630 ATT65654 ci 7495 ATT65636 ttl 7495 ATT65640 ATT65646 ATT65650 ATT65658
    Text: Product Brief = AT&T F Microelectronics ATT656 Series CMOS Gate Arrays Features Description • 1.0 im CMOS Si-gate triple-layer metal process technology; 0.75 |xm effective channel length The ATT656 series of CMOS gate arrays combines the leading edge technology necessary


    OCR Scan     		ATT656 ATT65630 65630 ATT65654 ci 7495 ATT65636 ttl 7495 ATT65640 ATT65646 ATT65650 ATT65658 PDF

    INVP inverter

    Abstract: No abstract text available
    Text: October 1989 PRELIMINARY OPEN ASIC DATA SHEET RADIATION TOLERANT LIBRARY MBRT GATE ARRAY SERIES - 2\xJ2 METAL LAYERS MB 0850RT - MB 1300RT - MB 2000RT - MB 2700RT - MB 3200RT MB 4000RT - MB 5000RT - MB 6600RT - MB 7500RT FEATURES ON CHIP SPECIAL FUNCTION - test mode


    OCR Scan     		0850RT 1300RT 2000RT 2700RT 3200RT 4000RT 5000RT 6600RT 7500RT INVP inverter PDF

    DIGITAL GATE EMULATOR USING 8085

    Abstract: 8086 microprocessor book by A K RAY 180 nm CMOS standard cell library AMI IC1732 DL021 M91C360 ami 0.6 micron 3682D ami equivalent gates ic/TDA7388 equivalent
    Text: Library Characteristics il A M I AMERICAN MICROSYSTEMS, INC. L ib ra ry Characteristics AMI6G 0.6 micron CMOS Gate Array AMI6Gx Gate Array Family Overview U S A B LE G ATES1 PART NUM B ER2 B O N D PAD S I/O C E L L S 2 LM 3 LM AMI6G4 1.39 1.85 44 52 AMI6G16S


    OCR Scan     		AMI6G16S AMI6G33S AMI6G41S AMI6G70S AMI6G106S AMI6G150S AMI6G202S AMI6G333 AMI6G471 AMI6G603 DIGITAL GATE EMULATOR USING 8085 8086 microprocessor book by A K RAY 180 nm CMOS standard cell library AMI IC1732 DL021 M91C360 ami 0.6 micron 3682D ami equivalent gates ic/TDA7388 equivalent PDF

    MB-7500

    Abstract: 130 nm CMOS standard cell library ST
    Text: Mrüll electronic June 1992 ASIC HI-REL DATA SHEET MB GATE ARRAY SERIES - 2\U2 METAL LAYERS MB 850 - MB 1300 - MB 2000 - MB 2700 - MB 3200 MB 4000 - MB 5000 - MB 6600 - MB 7500 FEATURES ADVANCED SILICON GATE CMOS PROCESS : - two metal level - 2 micron drawn channel length


    OCR Scan     		5flbfl45b MB-7500 130 nm CMOS standard cell library ST PDF

    RS FLIP FLOP LAYOUT

    Abstract: RS flip flop cmos 7400 2-input nand gate Ci 4008 breadboard binary and decimal counter Matra-Harris Semiconductor MATRA MHS HMT MATRA MHS HMT* 28 pins Matra-Harris 1 bit full adder
    Text: MA GATE ARRAY SERIES 3/J1 METAL LAYER lÌlll IwSS^RRIS SEMICONDUCTOR MA 0250-MA 0400 MA 0800-MA 1200 JANUARY 1986 Features Description • HIGH SPEED CM OS : 2 NS/GATE TYPICAL PROPAGATION DELAY. • LOW CONSUMPTION : - STAND BY CURRENT 10 nA/GATE - OPERATING CURRENT


    OCR Scan     		0250-MA 0800-MA D-12OOAOO RS FLIP FLOP LAYOUT RS flip flop cmos 7400 2-input nand gate Ci 4008 breadboard binary and decimal counter Matra-Harris Semiconductor MATRA MHS HMT MATRA MHS HMT* 28 pins Matra-Harris 1 bit full adder PDF

    IC 3-8 decoder 74138 pin diagram

    Abstract: full adder using ic 74138 circuit diagram for IC 7483 full adder 7483 4 bit binary full adder circuit diagram for 7483 ic 7442 encoder ttl ic 7485 transistor KD 617 0850R 74283 IC pin diagram FOR 8 BIT BINARY MB5000
    Text: _ HMHS electronic June 1992 ASIC HI-REL DATA SHEET RADIATION TOLERANT LIBRARY MBRT GATE ARRAY SERIES - 2\a!2 METAL LAYERS MB 0850RT - MB 1300RT - MB 2000RT - MB 2700RT - MB 3200RT MB 4000RT - MB 5000RT - MB 6600RT - MB 7500RT FEATURES . TOTAL DOSE up to 70 krads Si


    OCR Scan     		0850RT 1300RT 2000RT 2700RT 3200RT 4000RT 5000RT 6600RT 7500RT D4401 IC 3-8 decoder 74138 pin diagram full adder using ic 74138 circuit diagram for IC 7483 full adder 7483 4 bit binary full adder circuit diagram for 7483 ic 7442 encoder ttl ic 7485 transistor KD 617 0850R 74283 IC pin diagram FOR 8 BIT BINARY MB5000 PDF

    DL05L

    Abstract: lm 739 dl051d ODCSXE04 180 nm CMOS standard cell library AMI DL021D M91C360 ami 0.6 micron micron37 ami equivalent gates
    Text: Library Characteristics AMI AMERICAN MICROSYSTEMS, INC Description • Cost driven architecture: - Offers both 2 and 3 level metal interconnect to provide the lowest user cost for the number of gates and pads required. - Compiled memory blocks on standard cells are


    OCR Scan     		2Kx32 16Kx32 256x16 R04cwxyz, R06cwxyz 4D55c DL05L lm 739 dl051d ODCSXE04 180 nm CMOS standard cell library AMI DL021D M91C360 ami 0.6 micron micron37 ami equivalent gates PDF

    Untitled

    Abstract: No abstract text available
    Text: - N k A J C BiihiiB i v n a electronic June 1992 ASIC HI-REL DATA SHEET MCM COMPOSITE ARRAYS FEATURES . SUPER CMOS TECHNOLOGY -1 urn DRAWN - 2 METAL LAYERS . SILICON GATE 0.8 nm EFFECTIVE CHANNEL LENGTH 150 MHz TYPICAL TOGGLE FREQUENCY RAM 64 K bit, 29 ns CYCLE TIME


    OCR Scan     		16x16 32x32 64x64 PDF