M34552G8FP
Abstract: M34552G8HFP M34552M4H-XXXFP M34552M4-XXXFP M34552M8H-XXXFP M34552M8-XXXFP 102 c1k
Text: PRELIMINARY Notice: This is not a final specification. Some parametric limits are subject to change. 4552 Group REJ03B0023-0101Z Rev.1.01 2003.09.17 SINGLE-CHIP 4-BIT CMOS MICROCOMPUTER DESCRIPTION The 4552 Group is a 4-bit single-chip microcomputer designed with
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REJ03B0023-0101Z
16-bit
M34552G8FP
M34552G8HFP
M34552M4H-XXXFP
M34552M4-XXXFP
M34552M8H-XXXFP
M34552M8-XXXFP
102 c1k
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY Notice: This is not a final specification. Some parametric limits are subject to change. 4552 Group REJ03B0023-0200Z Rev.2.00 2004.02.24 SINGLE-CHIP 4-BIT CMOS MICROCOMPUTER DESCRIPTION The 4552 Group is a 4-bit single-chip microcomputer designed with
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REJ03B0023-0200Z
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY Notice: This is not a final specification. Some parametric limits are subject to change. 4552 Group REJ03B0023-0100Z Rev.1.00 2003.07.23 SINGLE-CHIP 4-BIT CMOS MICROCOMPUTER DESCRIPTION The 4552 Group is a 4-bit single-chip microcomputer designed with
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REJ03B0023-0100Z
16-bit
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quartz 32,768khz C2K
Abstract: 104 c1k capacitor 4552 VT MAKING CODE 3F TRANSISTOR QFP48 package M34552M8-XXXFP M34552G8FP M34552G8HFP M34552M4H-XXXFP M34552M4-XXXFP
Text: PRELIMINARY Notice: This is not a final specification. Some parametric limits are subject to change. 4552 Group REJ03B0023-0300Z Rev.3.00 2004.07.09 SINGLE-CHIP 4-BIT CMOS MICROCOMPUTER DESCRIPTION The 4552 Group is a 4-bit single-chip microcomputer designed with
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REJ03B0023-0300Z
16bit
quartz 32,768khz C2K
104 c1k capacitor
4552 VT
MAKING CODE 3F TRANSISTOR
QFP48 package
M34552M8-XXXFP
M34552G8FP
M34552G8HFP
M34552M4H-XXXFP
M34552M4-XXXFP
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4552 VT
Abstract: driver cicuit diagram "LCD Power Supply" quartz 32,768khz C2K M34552G8FP M34552G8HFP M34552M4H-XXXFP M34552M4-XXXFP M34552M8H-XXXFP M34552M8-XXXFP
Text: 4552 Group REJ03B0023-0302 Rev.3.02 2006.12.22 SINGLE-CHIP 4-BIT CMOS MICROCOMPUTER DESCRIPTION The 4552 Group is a 4-bit single-chip microcomputer designed with CMOS technology. Its CPU is that of the 4500 series using a simple, high-speed instruction set. The computer is equipped with
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REJ03B0023-0302
16bit
4552 VT
driver cicuit diagram
"LCD Power Supply"
quartz 32,768khz C2K
M34552G8FP
M34552G8HFP
M34552M4H-XXXFP
M34552M4-XXXFP
M34552M8H-XXXFP
M34552M8-XXXFP
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4552 photomultiplier tube
Abstract: 4552 equivalent burle dy 255 photomultiplier Photocathode 4552 photomultiplier 71DY DY51 AJ2289
Text: Return To Product Page 4552 Photomultiplier 28-mm 1 1/8 inch Diameter 9-Stage, Side Window PMT ! Anti-Hysteresis Design ! High Quantum Efficiency Typically 20 % at 380 nm ! Low Dark Current Typically < 5 nanoamperes at 1000V BURLE 4552 is a 9-stage, side-window type of
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28-mm
4552 photomultiplier tube
4552 equivalent
burle
dy 255
photomultiplier
Photocathode
4552 photomultiplier
71DY
DY51
AJ2289
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TAL11
Abstract: quartz 32,768khz C2K M34552M8H-XXXFP M34552M8-XXXFP M34552G8FP M34552G8HFP M34552M4H-XXXFP M34552M4-XXXFP
Text: 4552 Group REJ03B0023-0301 Rev.3.01 2005.06.15 SINGLE-CHIP 4-BIT CMOS MICROCOMPUTER DESCRIPTION The 4552 Group is a 4-bit single-chip microcomputer designed with CMOS technology. Its CPU is that of the 4500 series using a simple, high-speed instruction set. The computer is equipped with
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REJ03B0023-0301
16bit
TAL11
quartz 32,768khz C2K
M34552M8H-XXXFP
M34552M8-XXXFP
M34552G8FP
M34552G8HFP
M34552M4H-XXXFP
M34552M4-XXXFP
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MAX9918
Abstract: MAX9920 MAX9918ASA MAX9919FASA MAX9920ASA MAX9919 resistor 5w 1kOhm MAX9919NASA lvk12r05
Text: 19-4552; Rev 0; 4/09 MAX9918 Evaluation Kit The MAX9918 evaluation kit EV kit provides a proven design to evaluate the MAX9918 wide input range, precision unidirectional/bidirectional, current-sense amplifier in an 8-pin SO package. The EV kit features Kelvin connections for force and sense at the amplifier inputs and a
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MAX9918
MAX9918ASA+
MAX9919FASA+
MAX9919NASA+
MAX9920ASA+
MAX9920
MAX9918ASA
MAX9919FASA
MAX9920ASA
MAX9919
resistor 5w 1kOhm
MAX9919NASA
lvk12r05
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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UPTF
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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4552
Abstract: 4552 VT M34552G8FP M34552G8HFP M34552M4H-XXXFP M34552M4-XXXFP M34552M8H-XXXFP M34552M8-XXXFP 28/TDA 4552
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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SPICE
Abstract: SLC7530 datasheet 14R2
Text: Document 455-1 SPICE Model – SLC7530 This lumped-element SPICE model data simulates the frequency-dependent behavior of Coilcraft power inductors within the frequency range shown in the accompanying table for each individual inductor. SLC7530D 1 4 R2 The data represents de-embedded measurements, as
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SLC7530
SLC7530D
SLC7530S
SLC7530D.
00E-03
10E-04
30E-05
SPICE
SLC7530 datasheet
14R2
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2E12
Abstract: FSYC9160D FSYC9160D1 FSYC9160D3 FSYC9160R FSYC9160R1 Rad hard MOSFETS in Harris
Text: FSYC9160D, FSYC9160R Semiconductor Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs July 1998 Features Description • 47A, -100V, rDS ON = 0.053Ω The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs
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FSYC9160D,
FSYC9160R
-100V,
2E12
FSYC9160D
FSYC9160D1
FSYC9160D3
FSYC9160R
FSYC9160R1
Rad hard MOSFETS in Harris
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2E12
Abstract: FSYC9160D FSYC9160D1 FSYC9160D3 FSYC9160R FSYC9160R1
Text: FSYC9160D, FSYC9160R Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs July 1998 Features Description • 47A, -100V, rDS ON = 0.053Ω The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically
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FSYC9160D,
FSYC9160R
-100V,
2E12
FSYC9160D
FSYC9160D1
FSYC9160D3
FSYC9160R
FSYC9160R1
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Untitled
Abstract: No abstract text available
Text: MASSES 001 4552 International E?R Rectifier PD-9.568A IRC640 HEXFET Power MOSFET • • • • • • S3T • IN R INTERNATIONAL R E C T IF IE R Dynamic dv/dt Rating Repetitive Avalanche Rated Current Sense Fast Switching Ease of Paralleling Simple Drive Requirements
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IRC640
4U55452
DD14SST
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vpb30w8m6200
Abstract: No abstract text available
Text: POSITRONIC INDUSTRIES BELIEVES THE DATA ON THIS DRAWING TO BE RELIABLE, SINCE THE TECHNICAL INFORMATION IS GIVEN FREE OF CHARGE, THE USER EMPLOYS SUCH INFORMATION AT HIS OWN DISCRETION AND RISK. POSITRONIC INDUSTRIES ASSUMES NO RESPONSIBILITY" FOR RESULTS OBTAINED OR DAMAGES
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3K6370
vpb30w8m6200
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SK6370
Abstract: No abstract text available
Text: DATE REV 8-29 05 NC 2-28 06 A 11-27 06 B 3-22 07 C POSITRONIC INDUSTRIES BELIEVES THE DATA ON THIS DRAWING TO BE RELIABLE, SINCE THE TECHNICAL INFORMATION IS GIVEN FREE OF CHARGE, THE USER EMPLOYS SUCH INFORMATION AT HIS OWN DISCRETION AND RISK. POSITRONIC INDUSTRIES ASSUMES NO
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3K6370
SK6370
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Untitled
Abstract: No abstract text available
Text: SK6777 DATE 12-6 REV NC A B POSITRONIC INDUSTRIES BELIEVES THE DATA ON THIS DRAWING TO BE RELIABLE, SINCE THE TECHNICAL INFORMATION IS GIVEN FREE OF CHARGE, THE USER EMPLOYS SUCH INFORMATION AT HIS OWN DISCRETION AND RISK. POSITRONIC INDUSTRIES ASSUMES NO
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SK6777
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tca 7509
Abstract: TORRINGTON
Text: Preliminary specification Philips Semiconductors BGN587 CATV Amplifier Module FEATURES PIN CONFIGURATION PINNING - SOT115E PIN DESCRIPTION • Excellent linearity • Extremely low noise 1 • Silicon nitride passivation 2 common • Rugged construction 3
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BGN587
OT115E
MSBQ47
ADS86
tca 7509
TORRINGTON
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philips hybrid amplifier OM modules
Abstract: philips om om245 SF263 philips rf amplifier om
Text: Philips Semiconductors Product specification CATV Amplifier Module BGN504/01 FEATURES PINNING - SOT115E PIN Excellent linearity • Extremely low noise 1 input • Silicon nitride glass barrier 2 common • Rugged construction 3 common 4 -v B 7 common 8 common
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BGN504/01
OT115E
MSB047
ADS89
philips hybrid amplifier OM modules
philips om
om245
SF263
philips rf amplifier om
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15 pin LCD module
Abstract: MULLARD
Text: Preliminary specification Philips Semiconductors CATV amplifier module FEATURES BGD501 PIN CONFIGURATION PINNING -SOT115C • Excellent linearity • Extremely low noise PIN DESCRIPTION 1 input • Silicon nitride passivation 2 common • Rugged construction
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BGD501
-SOT115C
MSB004
ADS86
15 pin LCD module
MULLARD
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THREADS
Abstract: No abstract text available
Text: SK6520 SHEET 1 OF 2 REVISION RECORD APP DR X RCt YX con ECO 2 4 5 7 0 ME ECO 2 5 5 6 8 DATE REV B-2D 06 NC 2-88 A M FOSITROMC NHJSnOES BEUEVES THE DATA ON TTflS ORAWNG TO BE RELIABLE, SM CE THE TECHNICAL INFORMATION 6 OMEN FREE OF CHARGE. THE USER EMPLOYS SUCH INFORMATION AT H B OWN DBCREIWN
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SK6520
3K6370
THREADS
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Untitled
Abstract: No abstract text available
Text: y *“ * FSYC9160D, FSYC9160R Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs July 1998 Features Description . 47A, -100V, rDS 0 N = 0.053£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs
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FSYC9160D,
FSYC9160R
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Untitled
Abstract: No abstract text available
Text: STI642004D1-60G 168-PIN DIMMS 2M X 64 Bit DRAM DIMM with Extended Data Out EDO FEATURES • • • • • • • • • GENERAL DESCRIPTION Performance range: ^RAC *CAC 60ns 15ns The Simple Technology STI642004D1-60G is a 2M bit x 64 Dynamic RAM high density memory module. The Simple
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STI642004D1-60G
168-PIN
110ns
STI642004D1-60G
28-pin
168pin
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