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    456 TRANSISTOR Search Results

    456 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CA3082 Rochester Electronics LLC CA3082 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC CA3081 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation

    456 TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2SB1370

    Abstract: 2SB1565 2SB1655
    Text: Transistors 2SB1370 2SB1655 / 2SB1565 94L-411-B303 (94L-456-B349) 319


    Original     		2SB1370 2SB1655 2SB1565 94L-411-B303) 94L-456-B349) 2SB1370 2SB1565 PDF

    a143x

    Abstract: IMB16 A143
    Text: Transistors UMA7N / FMA7A IMB16 96-386-A143X (96-456-B143X) 588


    Original     		IMB16 96-386-A143X) 96-456-B143X) a143x IMB16 A143 PDF

    Untitled

    Abstract: No abstract text available
    Text: User's Guide SLVU298 – March 2009 TPS54040EVM-456 0.5-A, SWIFT Regulator Evaluation Module This user's guide contains background information for the TPS54040 as well as support documentation for the TPS54040EVM-456 evaluation module HPA456 . Also included are the performance specifications,


    Original     		SLVU298 TPS54040EVM-456 TPS54040 HPA456) TPS54040EVM-456. PDF

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE 1^53^31 0020540 Q 2SE D B U K 456-1000A B U K 456-1000B P o w e rM O S tra n s is to r GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		56-1000A 456-1000B BUK456 -1000A -1000B bt53131 PDF

    BUK456-50A

    Abstract: drain BUK456 BUK456-50B T0220AB
    Text: E5 E N AMER PHILIPS/DISCRETE ^£3=131 D 0Q20S20 S B U K 456-50A B U K 456-50B P o w erM O S tra n s isto r G E N E R A L D ESCR IPTIO N N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		002GSE0 BUK456-50A BUK456-50B BUK456 BUK456-50A drain BUK456-50B T0220AB PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number: EN 2 456 No.2456 _ 2SA1436 PNP Epitaxial Planar Silicon Transistor I High-hpE^ AF Amp Applications Applications . AF amp, various drivers, muting circuit Features . Adoption of MBIT process . High DC current gain hpE=500 to 1200


    OCR Scan     		2SA1436 VEBOi15V) PDF

    eltec

    Abstract: No abstract text available
    Text: ROHM Corporation representatives US and Canada Massachusetts (Connecticut, Maine, New Hampshire, Rhode Island, Vermont) Alabama (Missouri) Strategic Marketing, Huntsville, AL (205) 464-0490 Cycle Sales, Inc., Harvard, MA (508) 456-6868 Arizona (New Mexico, Nevada)


    OCR Scan     		PDF

    2N5302

    Abstract: 2N5303 2n5302 transistor TRANSISTOR 2n5302 1000C 2N5302 JANTXV
    Text: TECHNICAL DATA NPN HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/456 Devices Qualified Level 2N5302 JANTX JANTXV 2N5303 MAXIMUM RATINGS Ratings Symbol 2N5302 2N5303 Unit VCEO VCBO VEBO IC IB 60 60 80 80 Vdc Vdc Vdc Adc Adc W W/0C C Collector-Emitter Voltage


    Original     		MIL-PRF-19500/456 2N5302 2N5303 1000C O-204AA) 2N5302; 2N5302 2N5303 2n5302 transistor TRANSISTOR 2n5302 2N5302 JANTXV PDF

    Untitled

    Abstract: No abstract text available
    Text: TECHNICAL DATA NPN HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/ 456 Devices Qualified Level 2N5302 JANTX JANTXV 2N5303 MAXIMUM RATINGS Ratings Symbol 2N5302 2N5303 Unit VCEO VCBO VEBO IC IB 60 60 80 80 Vdc Vdc Vdc Adc Adc W W/0C C Collector-Emitter Voltage


    Original     		MIL-PRF-19500/ 2N5302 2N5303 1000C O-204AA) 2N5302; PDF

    Cx2829

    Abstract: mindspeed command SRCCTL CX29704 CX28296
    Text: CN8237/CX29704 ATM SAR Evaluation Module Users Guide 500089A February 2002 Ordering Information Model Number Package Ambient Temperature Range CN8237 456-pin BGA –40 °C to 85 °C CX29704 27 x 27, 272-Pin PBGA –40 °C to 85 °C Revision History Revision


    Original     		CN8237/CX29704 00089A CN8237 456-pin CX29704 272-Pin Cx2829 mindspeed command SRCCTL CX29704 CX28296 PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors 2SB1370 2SB1655 / 2SB1565 94L-411-B303 (94L-456-B349) 319 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the


    Original     		2SB1370 2SB1655 2SB1565 94L-411-B303) 94L-456-B349) PDF

    IEC-68-2-58

    Abstract: HAL114 HAL114UA-E IEC68-2-20 switch ic
    Text: MICRONAS INTERMETALL HAL114 Unipolar Hall Switch IC MICRONAS Edition June 10, 1998 6251-456-1DS HAL114 Unipolar Hall Switch IC in CMOS technology Marking Code Type Temperature Range Introduction The HAL114 is a Hall switch produced in CMOS technology. The sensor includes a temperature-compensated


    Original     		HAL114 6251-456-1DS HAL114 IEC-68-2-58 HAL114UA-E IEC68-2-20 switch ic PDF

    4 Pin SMD Hall sensors

    Abstract: Hall-Effect-Sensor 115C SMD Hall sensors code C smd hall sensor SMD Hall sensors 3 pin SMD hall sensor SMD Hall C 115c hall 4 lead SMD Hall sensors 4 pin hall sensor
    Text: MICRONAS Edition Dec. 20, 1999 6251-456-2DS HAL114, HAL115 Hall Effect Sensor Family MICRONAS HAL11x Contents Page Section Title 3 3 3 3 4 4 4 1. 1.1. 1.2. 1.3. 1.4. 1.5. 1.6. Introduction Features Family Overview Marking Code Operating Junction Temperature Range


    Original     		6251-456-2DS HAL114, HAL115 HAL11x HAL114 OT-89A SPGS0022-5-A3/2E 4 Pin SMD Hall sensors Hall-Effect-Sensor 115C SMD Hall sensors code C smd hall sensor SMD Hall sensors 3 pin SMD hall sensor SMD Hall C 115c hall 4 lead SMD Hall sensors 4 pin hall sensor PDF

    Hall-Effect-Sensor 115C

    Abstract: SMD Hall sensors code 115c hall Hall sensors marking code D hall sensor fan 115E HAL114 HAL114UA-E HAL115
    Text: MICRONAS Edition Dec. 20, 1999 6251-456-2DS HAL114, HAL115 Hall Effect Sensor Family MICRONAS HAL11x Contents Page Section Title 3 3 3 3 4 4 4 1. 1.1. 1.2. 1.3. 1.4. 1.5. 1.6. Introduction Features Family Overview Marking Code Operating Junction Temperature Range


    Original     		6251-456-2DS HAL114, HAL115 HAL11x HAL114 Hall-Effect-Sensor 115C SMD Hall sensors code 115c hall Hall sensors marking code D hall sensor fan 115E HAL114 HAL114UA-E HAL115 PDF

    IEC-68-2-58

    Abstract: SOT-89A HAL114 HAL114UA-E IEC68-2-20 to92ua micronas hall 203
    Text: MICRONAS INTERMETALL HAL114 Unipolar Hall Switch IC MICRONAS Edition June 10, 1998 6251-456-1DS HAL114 Unipolar Hall Switch IC in CMOS technology Marking Code Type Temperature Range Introduction The HAL114 is a Hall switch produced in CMOS technology. The sensor includes a temperature-compensated


    Original     		HAL114 6251-456-1DS HAL114 IEC-68-2-58 SOT-89A HAL114UA-E IEC68-2-20 to92ua micronas hall 203 PDF

    Untitled

    Abstract: No abstract text available
    Text: MICRONAS Edition Dec. 20, 1999 6251-456-2DS HAL114, HAL115 Hall Effect Sensor Family MICRONAS HAL11x Contents Page Section Title 3 3 3 3 4 4 4 1. 1.1. 1.2. 1.3. 1.4. 1.5. 1.6. Introduction Features Family Overview Marking Code Operating Junction Temperature Range


    Original     		HAL114, HAL115 6251-456-2DS HAL11x HAL114 PDF

    115E

    Abstract: HAL114 HAL114UA-E HAL115
    Text: MICRONAS INTERMETALL HAL114, HAL115 Hall Effect Sensor Family MICRONAS Edition Dec. 20, 1999 6251-456-2DS HAL11x Contents Page Section Title 3 3 3 3 4 4 4 1. 1.1. 1.2. 1.3. 1.4. 1.5. 1.6. Introduction Features Family Overview Marking Code Operating Junction Temperature Range


    Original     		HAL114, HAL115 6251-456-2DS HAL11x HAL114 115E HAL114 HAL114UA-E HAL115 PDF

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE INFORMATION HAL114 Hall Effect Sensor IC MICRONAS Edition May 5, 1997 6251-456-1AI HAL114 Hall Effect Sensor IC in CMOS technology Features: ADVANCE INFORMATION Marking Code Type Temperature Range A E C 114A 114E 114C – operates from 4.5 V to 24 V supply voltage


    Original     		HAL114 6251-456-1AI HAL114S HAL114UA PDF

    HA200-SB

    Abstract: construction hall effect transducers 200-SI 500w power amplifier pcb diagram 100ARMS PCB Mounting Hall Effect Current Transformer HT 200-srud 25-NP HT 500 srud transducers
    Text: E17755 Issued July 1994 Halleffect transducers,current and voltage This data sheet covers the following products. RS stock no. 286-311 286-327 286-333 286-349 286-355 286-377 286-383 286-399 286-406 286-412 286-428 286-434 286-440 286-456 286-462 286-478 286-484


    Original     		E17755 50/100A HA200-SB construction hall effect transducers 200-SI 500w power amplifier pcb diagram 100ARMS PCB Mounting Hall Effect Current Transformer HT 200-srud 25-NP HT 500 srud transducers PDF

    LV 25-P

    Abstract: LV 25-NP HA200-SB hall current transducer LA 100P 286377 50psp1 200-SRI 500-SBD HT 200-srud PCB Mounting Hall Effect Current Transformer
    Text: Issued March 2001 232-5250 Data Pack E Data Sheet Hall effect transducers, current and voltage This data sheet covers the following products: RS stock no. 286-311 286-327 286-333 286-349 286-355 286-377 286-383 286-399 286-406 286-412 286-434 286-456 286-462


    Original     		50/100A LV 25-P LV 25-NP HA200-SB hall current transducer LA 100P 286377 50psp1 200-SRI 500-SBD HT 200-srud PCB Mounting Hall Effect Current Transformer PDF

    ZENER 2V7

    Abstract: J 2N3055 2n3055 general purpose 2n3055 transistors J1N4150 J-BDX64 1N457/A 4446 BDX66 BZX85 C27
    Text: chips/pastilles power transistors transistors de puissance THOMSON-CSF P Types h2i E VCE min. NPN W PNP 117 117 60 90 117 J-2N3055 J-BDX J-BDX J-BDX J-BDX 53 63 65 67 J-BDX18 J-BDX54 J-BDX62 J-BDX64 J-BDX66 ISO (V) 45 60 60 60 20 20 750 1000 1000 1000 60


    OCR Scan     		J-2N3055 J-BDX18 J-BDX54 J-BDX62 J-BDX64 J-BDX66 j-1n457 ZENER 2V7 J 2N3055 2n3055 general purpose 2n3055 transistors J1N4150 1N457/A 4446 BDX66 BZX85 C27 PDF

    BC548 BC847

    Abstract: BC338 BC546 BC338/BC546
    Text: Philips Semiconductors Selector guide TYPE NUMBER Bipolar transistors V CEO •c V (mA) h FE Ptot (mW) min. fT(M IN ) max. typ (MHz) PAGE Leaded transistors NPN BC337 45 500 800 100 600 100 BC337A 60 500 800 100 600 100 59 BC338 25 500 800 100 600 100 59


    OCR Scan     		BC337 BC337A BC338 BC546 BC547 BC548 MPSA42 MPSA43 2N5550 2N5551 BC548 BC847 BC338 BC546 BC338/BC546 PDF

    transistor 3904

    Abstract: transistor 2222a transistor 2222a sot 89 sot 23 transistor 70.2 2907a TRANSISTOR PNP pnp transistor 800v 2907A PNP bipolar transistors transistor 5 Amp 700 volt transistor A92 SOT 89 3906 npn
    Text: N e w T o T h e 2 3 E D t T i a N - . . c o M Small Signal Transistors High Current NPN and PNP Transistors in an SOT-23 package. These new small signal transistors provide an increased current capability and high hpE- CMPT491E CMPT591E - 1 Amp Low VCE SAT NPN High Current Transistor See page 338.


    OCR Scan     		OT-23 CMPT491E CMPT591E OT-23 OT-223 CMPTA46 CMPTA96 CZTA46 CZTA96 transistor 3904 transistor 2222a transistor 2222a sot 89 sot 23 transistor 70.2 2907a TRANSISTOR PNP pnp transistor 800v 2907A PNP bipolar transistors transistor 5 Amp 700 volt transistor A92 SOT 89 3906 npn PDF

    TD2400

    Abstract: transistor zo 607 2SC5007 2SC5007-T1 NEC 1555 AK-804 164-1-1
    Text: DATA SHEET SILICON TRANSISTOR 2SC5007 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5007 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range


    Original     		2SC5007 2SC5007 TD2400 transistor zo 607 2SC5007-T1 NEC 1555 AK-804 164-1-1 PDF