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    45DBC Search Results

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    45DBC Price and Stock

    Skyworks Solutions Inc 545DBC622M080BCG

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    Richardson RFPD 545DBC622M080BCG 1
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    Skyworks Solutions Inc 545DBC622M080BBG

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    DigiKey 545DBC622M080BBG 50
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    Skyworks Solutions Inc 545DBC622M080BCGR

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    DigiKey 545DBC622M080BCGR 250
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    Richardson RFPD 545DBC622M080BCGR 1
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    Skyworks Solutions Inc 545DBC622M080BBGR

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    DigiKey 545DBC622M080BBGR Reel 250
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    NXP Semiconductors 74HC245DB/C,118

    74HC245DB - Bus Transceiver, HC/UH Series, 1-Func, 8-Bit, True Output, CMOS, SSOP20 '
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    Rochester Electronics 74HC245DB/C,118 1,000 1
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    45DBC Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: EIM1011-4 10.7 – 11.7GHz Multi-Stage Power Amplifier UPDATED: 01/15/2008 FEATURES • • • • • 10.7– 11.7GHz Operating Frequency Range 35.5dBm Output Power @1dB Compression 27.0 dB Typical Power Gain @1dB gain compression -45dBc Typical OIM3 @each tone Pout 22dBm


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    EIM1011-4 -45dBc 22dBm PDF

    Untitled

    Abstract: No abstract text available
    Text: FLM3135-8F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 39.5dBm Typ. High Gain: G1dB = 11.0dB (Typ.) High PAE: ηadd = 37% (Typ.) Low IM3 = -45dBc@Po = 28.5dBm Broad Band: 3.1 ~ 3.5GHz Impedance Matched Zin/Zout = 50Ω


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    FLM3135-8F -45dBc FLM3135-8F 25hods PDF

    Untitled

    Abstract: No abstract text available
    Text: FLM7185-12F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 41.0dBm Typ. High Gain: G1dB = 8.0dB (Typ.) High PAE: ηadd = 30% (Typ.) Low IM3 = -45dBc@Po = 30.0dBm Broad Band: 7.1 ~ 7.9GHz Impedance Matched Zin/Zout = 50Ω


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    FLM7185-12F -45dBc FLM7185-12F PDF

    Untitled

    Abstract: No abstract text available
    Text: FLM1011-6F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 37.5dBm Typ. High Gain: G1dB = 7.5dB (Typ.) High PAE: ηadd = 28% (Typ.) Low IM3 = -45dBc@Po = 25dBm Broad Band: 10.7 ~ 11.7GHz Impedance Matched Zin/Zout = 50Ω


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    FLM1011-6F -45dBc 25dBm FLM1011-6F PDF

    Untitled

    Abstract: No abstract text available
    Text: FLM1314-12F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 41.0dBm Typ. High Gain: G1dB = 6.0dB (Typ.) High PAE: ηadd = 23% (Typ.) Low IM3 = -45dBc@Po = 29.0dBm Broad Band: 13.75 ~ 14.5GHz Impedance Matched Zin/Zout = 50Ω


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    FLM1314-12F -45dBc FLM1314-12F 25hods PDF

    Untitled

    Abstract: No abstract text available
    Text: FLM5972-4F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 36.5dBm Typ. High Gain: G1dB = 9.5dB (Typ.) High PAE: ηadd = 36% (Typ.) Low IM3 = -45dBc@Po = 25.5dBm Broad Band: 5.9 ~ 7.2GHz Impedance Matched Zin/Zout = 50Ω


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    FLM5972-4F -45dBc FLM5972-4F PDF

    FLM3135-18F

    Abstract: No abstract text available
    Text: FLM3135-18F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 43.0dBm Typ. High Gain: G1dB = 10.5dB (Typ.) High PAE: ηadd = 37% (Typ.) Low IM3 = -45dBc@Po = 32.0dBm Broad Band: 3.1 ~ 3.5GHz Impedance Matched Zin/Zout = 50Ω


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    FLM3135-18F -45dBc FLM3135-18F PDF

    FLM1011-6F

    Abstract: No abstract text available
    Text: FLM1011-6F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 37.5dBm Typ. High Gain: G1dB = 7.5dB (Typ.) High PAE: ηadd = 28% (Typ.) Low IM3 = -45dBc@Po = 25dBm Broad Band: 10.7 ~ 11.7GHz Impedance Matched Zin/Zout = 50Ω


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    FLM1011-6F -45dBc 25dBm FLM1011-6F V4888 PDF

    FLM5972-4F

    Abstract: No abstract text available
    Text: FLM5972-4F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 36.5dBm Typ. High Gain: G1dB = 9.5dB (Typ.) High PAE: ηadd = 36% (Typ.) Low IM3 = -45dBc@Po = 25.5dBm Broad Band: 5.9 ~ 7.2GHz Impedance Matched Zin/Zout = 50Ω


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    FLM5972-4F -45dBc FLM5972-4F PDF

    FLM1213-6F

    Abstract: No abstract text available
    Text: FLM1213-6F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 37.5dBm Typ. High Gain: G1dB = 7.0dB (Typ.) High PAE: ηadd = 27% (Typ.) Low IM3 = -45dBc@Po = 25dBm Broad Band: 12.7 ~ 13.2GHz Impedance Matched Zin/Zout = 50Ω


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    FLM1213-6F -45dBc 25dBm FLM1213-6F V4888 PDF

    POUT315

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM5964-16SL-081 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES • ■ LOW INTERMODULATION DISTORTION HIGH GAIN IM3=-45dBc a t Po=31.5dBm GldB=8.0dB at 5.9GHz to 6.4GHz Single C arrier Level BROAD BAND INTERNALLY MATCHED


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    -45dBc TIM5964-16SL-081 2-16G1B) POUT315 PDF

    Untitled

    Abstract: No abstract text available
    Text: FLM3742-25DA F, ¿¡U-,. r UJ11jU Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idB = 44dBm Typ. High Gain: G ^ b = 10.5dB (Typ.) High PAE: r iadd = 36% (Typ.) Low IM3 = -45dBc@Po = 32dBm Broad Band: 3.7 ~ 4.2GHz


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    FLM3742-25DA UJ11jU 44dBm -45dBc 32dBm PDF

    Untitled

    Abstract: No abstract text available
    Text: FLM1213-6F X, Ku-Band Internally Matched FET FEATURES • High Output Power: P ^ b = 37.5dBm Typ. • High Gain: G ^ b = 7.0dB (Typ.) • High PAE: r!add = 27% (Typ.) • Low IM3 = -45dBc@Po = 25dBm • Broad Band: 12.7 ~ 13.2GHz • Impedance Matched Zin/Zout = 50Q


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    FLM1213-6F -45dBc 25dBm FLM1213-6F FCSI0598M200 PDF

    Untitled

    Abstract: No abstract text available
    Text: FLM1213-12F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P ^ b = 40.5dBm Typ. High Gain: G ^ b = 5.5dB (Typ.) High PAE: r!add = 24% (Typ.) IM3 = -45dBc@Po = 28dBm Broad Band: 12.7 ~ 13.2GHz Impedance Matched Zin/Zout = 50Q


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    FLM1213-12F -45dBc 28dBm FLM1213-12F FCSI0598M200 PDF

    Untitled

    Abstract: No abstract text available
    Text: F, . FLM5964-18DA r UJ11 jU Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P ^ b = 42.5dBm Typ. High Gain: G ^ b = 8.5dB (Typ.) High PAE: r!add = 31% (Typ.) Low IM3 = -45dBc@Po = 31.5dBm Broad Band: 5.9 ~ 6.4GHz


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    FLM5964-18DA -45dBc 5964-18D Drain-40 PDF

    5964-6D

    Abstract: No abstract text available
    Text: F, . FLM5964-6D r UJ11 jU Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P ^ b = 38.0dBm Typ. High Gain: G ^ b = 10.0ÒB (Typ.) High PAE: r!add = 36% (Typ.) Low IM3 = -45dBc@Po = 27dBm Broad Band: 5.9 ~ 6.4GHz


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    FLM5964-6D -45dBc 27dBm 5964-6D PDF

    Untitled

    Abstract: No abstract text available
    Text: FLM5972-8F C-Band Internally Matched FET FEATURES • High Output Power: P ^ b = 39.0dBm Typ. • High Gain: G ^ b = 8.5dB (Typ.) • High PAE: riadd = 31% (Typ.) • Low IM3 = -45dBc@Po = 28.0dBm • Broad Band: 5.9 ~ 7.2GHz • Impedance Matched Zin/Zout = 50Q


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    FLM5972-8F -45dBc FLM5972-8F FCSI0599M200 PDF

    FLM5964

    Abstract: No abstract text available
    Text: n FLM5964-8D Internally Matched Power GaAs F E Ts . I FEATURES • High Output Power: P-idg = 39.0dBm Typ. • High Gain: G -j^B = 8.0dB (Typ.) • High PAE: r iadd = 30% (Typ.) • Low IM 3 = -45dBc@Po = 28dBm • Broad Band: 5.9 ~ 6.4GHz • Impedance Matched Zin/Zout = 50Q


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    FLM5964-8D -45dBc 28dBm FLM5964-8D FLM5964 PDF

    FLM5964-18DA

    Abstract: 5964-18DA 5964-18D
    Text: FLM5964-18DA F| if m - i • I Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idg = 42.5dBm Typ. High Gain: G -j^B = 8.5dB (Typ.) High PAE: r iadd = 31% (Typ.) Low IM 3 = -45dBc@Po = 31.5dBm Broad Band: 5.9 ~ 6.4GHz


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    FLM5964-18DA -45dBc 5964-18D FLM5964-18DA 5964-18DA PDF

    Untitled

    Abstract: No abstract text available
    Text: F| .fjW-,. J FLM4450-4E Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idg = 36dBm Typ. High Gain: G-j^B = 11dB (Typ.) High PAE: riadd = 33% (Typ.) Low IM3 = -45dBc@Po = 25dBm Broad Band: 4.4 ~ 5.0GHz Impedance Matched Zin/Zout = 50Q


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    FLM4450-4E 36dBm -45dBc 25dBm 4450-4E PDF

    Untitled

    Abstract: No abstract text available
    Text: FLM6472-35DA F| r U J Il j U Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idg = 45.5dBm Typ. High Gain: G-j^B = 6.0dB (Typ.) High PAE: riadd = 33% (Typ.) Low IM3 = -45dBc@Po = 34.5dBm Broad Band: 6.4 ~ 7.2GHz


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    FLM6472-35DA -45dBc FLM6472-35DA PDF

    FLM4450-25D

    Abstract: FUJI GaAs FET 25Q 328 FLM4450-25DA
    Text: n FLM4450-25DA Internally Matched Power GaAs F E Ts . I FEATURES • • • • • • • High Output Power: P-idg = 44dBm Typ. High Gain: G-j^B = 9.5dB (Typ.) High PAE: riadd = 35% (Typ.) Low IM3 = -45dBc@Po = 32dBm Broad Band: 4.4 ~ 5.0GHz Impedance Matched Zin/Zout = 50Q


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    FLM4450-25DA 44dBm -45dBc 32dBm FLM4450-25DA FLM4450-25D FUJI GaAs FET 25Q 328 PDF

    U/25/20/TN26/15/850/FLM6472-18DA

    Abstract: No abstract text available
    Text: FLM6472-18DA F| I Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idg = 42.5dBm Typ. High Gain: G-j^B = 7.0dB (Typ.) High PAE: riadd = 30% (Typ.) Low IM3 = -45dBc@Po = 31.5dBm Broad Band: 6.4 ~ 7.2GHz Impedance Matched Zin/Zout = 50Q


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    FLM6472-18DA -45dBc FLM6472-18DA VD-164 U/25/20/TN26/15/850/FLM6472-18DA PDF

    FLM7177-18DA

    Abstract: T-34038
    Text: FLM7177-18DA Fuffrsu Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idg = 42.5dBm Typ. High Gain: G-j^B = 7.5dB (Typ.) High PAE: r iadd = 30% (Typ.) Low IM3 = -45dBc@Po = 3 1 .5dBm Broad Band: 7.1 ~ 7.7GHz Impedance Matched Zin/Zout = 50Q


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    FLM7177-18DA -45dBc FLM7177-18DA Symbo474 T-34038 PDF