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    T250N

    Abstract: No abstract text available
    Text: S C R s ^tavm TYPE vRraf =VDRM . V _ (A) t JM = 1 2 5 ° C 3 2 ° ^ r n »s T198N T198N T198N T198N T198N T198N T198N T198N T198N 400 A rm- T200N T200N T200N T200N T200N T200N T200N T200N T200N T200N 450 400 600 800 1000 1100 1200 1400 1600 1800 200 Arn3


    OCR Scan     		PDF T198N T200N T250N

    D100N

    Abstract: No abstract text available
    Text: SILICON 120 Tj At D80N 2 F D80N 4 (F) D80N 6 (R) D80N.8 (R) D80N 10 (R) D80N 12 <R> D80N 14 (R) D80N 16 (R) D80N 18 (R) (R> Reverse P o l. 160 1.43 350 Tt ight=20N m B-27d 20 1200 1400 1600 1800 Rt h j _ c 1 0.42°C /W 2000 200 100 1.33 350 i 2t=20kA2s 20


    OCR Scan     		PDF B-27d 20kA2s 45kA2s 100oC D325N D100N

    Untitled

    Abstract: No abstract text available
    Text: FREQUENCY II < oTa I TAVM TYPE 6 0 A rais T63N T63N T63N T63N T63N T63N T63N T63N T63N 180 T80N T80N T80N T80N T80N T80N T80N T80N T80N T j M= 1 2 5 °C 400 600 800 1000 1100 1200 1400 1600 1800 Arn s < _LA _ 63 400 600 800 1000 1100 1200 1400 1600 1800


    OCR Scan     		PDF 05kA2s 180us