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    4600 DUAL MOSFET Search Results

    4600 DUAL MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK424G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK423G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK422G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation

    4600 DUAL MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    k 3531 transistor

    Abstract: No abstract text available
    Text: ALH25AF48N Half-brick Series Te c h n i c a l R e f e r e n c e N o t e s 48V Input, 5V/3.3V Dual Output 100W DC-DC Converter Rev02 TEL: FAX: USA 1-760-930-4600 1-760-930-0698 Europe 44- 0 1384-842-211 44-(0)1384-843-355 Asia 852-2437-9662 852-2402-4426 Publishing Date: 20040928


    Original     		ALH25AF48N Rev02 02inch 01inch k 3531 transistor PDF

    k 3531 transistor

    Abstract: No abstract text available
    Text: ALH25AF48 Half-brick Dual Output Series Te c h n i c a l R e f e r e n c e N o t e s 48V Input, 5V/3.3V Output 100 Watt DC-DC Converter TEL: FAX: USA 1-760-930-4600 1-760-930-0698 Europe 44- 0 1384-842-211 44-(0)1384-843-355 Asia 852-2437-9662 852-2402-4426 www.astec.com


    Original     		ALH25AF48 -19www -20www k 3531 transistor PDF

    lucent DC-DC POWER MODULE

    Abstract: No abstract text available
    Text: ALH25AF48 N Series Te c h n i c a l R e f e r e n c e N o t e s 48V Input, 5V&3.3V Dual Output 100W DC-DC Converter (Rev01) TEL: FAX: USA 1-760-930-4600 1-760-930-0698 Europe 44-(0)1384-842-211 44-(0)1384-843-355 Asia 852-2437-9662 852-2402-4426 -1Publishing Date: 20020624


    Original     		ALH25AF48 Rev01) lucent DC-DC POWER MODULE PDF

    10KV SiC

    Abstract: SiC IGBT High Power Modules SiC MOSFET 4600 mosfet 4600 dual mosfet Cree SiC MOSFET N00014-05-C-0202 Cree SiC diode die 100A Mosfet high voltage 10kv igbt
    Text: Roadmap for Megawatt Class Power Switch Modules Utilizing Large Area Silicon Carbide MOSFETs and JBS Diodes Jim Richmond Scott Leslie Brett Hull Cree, Inc. 4600 Silicon Drive Durham, NC 27703, USA [email protected] Powerex, Inc. 200 E. Hillis St. Youngwood PA 15697, USA


    Original     		PDF

    LTM4600

    Abstract: No abstract text available
    Text: LTM4600 10A High Efficiency DC/DC µModule Features n n n n n n n n n n n n n n Description Complete Switch Mode Power Supply Wide Input Voltage Range: 4.5V to 20V 10A DC, 14A Peak Output Current Parallel Two µModule DC/DC Converters for 20A Output Current


    Original     		LTM4600 com/LTM4600 4600fd LTM4600 PDF

    Power MOSFET, toshiba

    Abstract: toshiba f5d NPN S2e TOSHIBA "ULTRA HIGH SPEED" DIODE 1A TPCA8103 438B MOSFET TOSHIBA TPCP8402 Power MOSFET toshiba TPC6004
    Text: 2004-3 PRODUCT GUIDE Power MOSFETs TPC Series semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Power MOSFETs TPC Series CONTENTS 1. Overview. p.4-5 2. Features . p.6-15


    Original     		BCE0019A BCE0019B Power MOSFET, toshiba toshiba f5d NPN S2e TOSHIBA "ULTRA HIGH SPEED" DIODE 1A TPCA8103 438B MOSFET TOSHIBA TPCP8402 Power MOSFET toshiba TPC6004 PDF

    R2A11301FT

    Abstract: SH7766 R2A25108KFP 2SC5664 PowerVR SGX530 PowerVR SGX540 car ecu wiring system service manual R2A25104KFP V850E2 fx4 DJ4 renesas
    Text: Renesas Automotive www.renesas.com 2011.10 Renesas Automotive Introduction "Green" Automotive Initiative Leading the World with a Wide-Ranging Product Lineup • Application Systems ■ Renesas Products Contents 01 ■ Renesas Constituent Technologies HEV/EV


    Original     		/533MHz BGA-832 BGA-472 BGA-429 BGA-720 BGA-653 R2A11301FT SH7766 R2A25108KFP 2SC5664 PowerVR SGX530 PowerVR SGX540 car ecu wiring system service manual R2A25104KFP V850E2 fx4 DJ4 renesas PDF

    5mm RGB led 4 pin

    Abstract: 5mm rgb led pic12f675 led rgb smd s6 vishay S1 push to on switch introduction rgb smd led 1K 1/4W Resistor TACT Switch with LED smd rgb red 5mm LED with holder
    Text: EV-132 AAT4297 EVAL: Dual RGB Controller Introduction The AAT4297 EVAL board demonstrates the operation of the AAT4297 SmartSwitch . This device has six low side N-channel load switches, which are serially controlled. The AAT4297 operates from 1.8V to 5.5V,


    Original     		EV-132 AAT4297 AAT3110 EV-132 5mm RGB led 4 pin 5mm rgb led pic12f675 led rgb smd s6 vishay S1 push to on switch introduction rgb smd led 1K 1/4W Resistor TACT Switch with LED smd rgb red 5mm LED with holder PDF

    AAT4282A

    Abstract: AAT4282A-1 AAT4282A-2 AAT4282AIPS-3-T1
    Text: AAT4282A Dual Slew Rate Controlled Load Switch General Description Features The AAT4282A SmartSwitch is a member of AnalogicTech's Application Specific Power MOSFET™ ASPM™ product family. The AAT4282A is a dual P-channel MOSFET power switch designed


    Original     		AAT4282A AAT4282A AAT4282A-1 AAT4282A-2 AAT4282AIPS-3-T1 PDF

    AAT4252A

    Abstract: AAT4252A-3 AAT4252AITP-3-T1
    Text: AAT4252A Dual Slew Rate Controlled Load Switch General Description Features The AAT4252A SmartSwitch is a dual P-channel MOSFET power switch designed for high-side loadswitching applications. Each MOSFET has a typical RDS ON of 105mΩ, allowing increased load switch


    Original     		AAT4252A AAT4252A 500ns AAT4252A-3 AAT4252AITP-3-T1 PDF

    schematic diagram ac voltage regulator

    Abstract: schematic diagram ac power regulator schematic diagram voltage regulator for AC to AC schematic diagram ac regulator keithley 2400 schematic FLUKE 36 schematic diagram FLUKE 715 schematic diagram Tektronix 464 HP33120A Fluke 189
    Text: EV-137 AAT3244 EVAL: 300mA Adjustable Dual CMOS Low Voltage LDO Linear Regulator Introduction The AAT3244 evaluation board provides a platform for test and evaluation of the AAT3244 Dual CMOS Low Voltage LDO Linear Regulator. The evaluation board demonstrates suggested size and placement of external


    Original     		EV-137 AAT3244 300mA TSOPJW-12 EV-137 schematic diagram ac voltage regulator schematic diagram ac power regulator schematic diagram voltage regulator for AC to AC schematic diagram ac regulator keithley 2400 schematic FLUKE 36 schematic diagram FLUKE 715 schematic diagram Tektronix 464 HP33120A Fluke 189 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR862DP Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.0028 at VGS = 10 V 50 0.0035 at VGS = 4.5 V 50 VDS (V) 25 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		SiR862DP 2002/95/EC SiR862DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si7489DP Vishay Siliconix P-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.041 at VGS = - 10 V - 28 0.047 at VGS = - 4.5 V - 28 VDS (V) - 100 Qg (Typ.) 54 nC • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET


    Original     		Si7489DP Si7489DP-T1-E3 Si7489DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4654DY Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.004 at VGS = 10 V 28.6 0.0052 at VGS = 4.5 V 25.6 VDS (V) 25 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		Si4654DY Si4654DY-T1-E3 Si4654DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR870DP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) () 100 0.0060 at VGS = 10 V 60 0.0064 at VGS = 7.5 V 60 0.0078 at VGS = 4.5 V 60 Qg (Typ.) 26.7 nC APPLICATIONS PowerPAK SO-8 S 6.15 mm


    Original     		SiR870DP SiR870DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4477DY Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.0062 at VGS = - 4.5 V - 26.6 0.0105 at VGS = - 2.5 V - 20.6 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		Si4477DY 2002/95/EC Si4477DY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4477DY Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.0062 at VGS = - 4.5 V - 26.6 0.0105 at VGS = - 2.5 V - 20.6 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		Si4477DY 2002/95/EC Si4477DY-T1-GE3 11-Mar-11 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4654DY Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.004 at VGS = 10 V 28.6 0.0052 at VGS = 4.5 V 25.6 VDS (V) 25 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		Si4654DY Si4654DY-T1-E3 Si4654DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR870DP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) () 100 0.0060 at VGS = 10 V 60 0.0064 at VGS = 7.5 V 60 0.0078 at VGS = 4.5 V 60 Qg (Typ.) 26.7 nC APPLICATIONS PowerPAK SO-8 S 6.15 mm


    Original     		SiR870DP SiR870DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiR870ADP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a 0.0066 at VGS = 10 V 60 0.0070 at VGS = 7.5 V 60 0.0105 at VGS = 4.5 V 60 VDS (V) 100 Qg (Typ.) 25.5 nC APPLICATIONS PowerPAK SO-8 S 6.15 mm • Fixed Telecom


    Original     		SiR870ADP SiR870ADP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR862DP Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.0028 at VGS = 10 V 50 0.0035 at VGS = 4.5 V 50 VDS (V) 25 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		SiR862DP 2002/95/EC SiR862DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si7489DP Vishay Siliconix P-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.041 at VGS = - 10 V - 28 0.047 at VGS = - 4.5 V - 28 VDS (V) - 100 Qg (Typ.) 54 nC • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET


    Original     		Si7489DP Si7489DP-T1-E3 Si7489DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR870ADP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a 0.0066 at VGS = 10 V 60 VDS (V) 100 0.0070 at VGS = 7.5 V 60 0.0105 at VGS = 4.5 V 60 Qg (Typ.) 25.5 nC APPLICATIONS PowerPAK SO-8 S 6.15 mm


    Original     		SiR870ADP 2002/95/EC SiR870ADP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4477DY Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.0062 at VGS = - 4.5 V - 26.6 0.0105 at VGS = - 2.5 V - 20.6 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		Si4477DY 2002/95/EC Si4477DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF