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    4672 TRANSISTOR Search Results

    4672 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    4672 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    BCP4672

    Abstract: 4672 transistor bcp46 60V transistor npn 2a
    Text: BCP4672 2A, 60V NPN Epitaxial Silicon Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES  SOT-89 The BCP4672 is designed for low frequency amplifier applications. 4 MARKING 4672 


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    BCP4672 OT-89 BCP4672 BCP4672-A BCP4672-B 500mA 500mA, 100MHz width380s, 4672 transistor bcp46 60V transistor npn 2a PDF

    transistor p86

    Abstract: 103 transistor transistor b 1655 593C a4696 TO-66 CASE
    Text: M55 Sect 6 p86-103 -07R5:M55 Sect 6 p86-103 -07R2 1/8/09 12:25 PM Page 103 TRANSISTOR INSULATORS • Rapid Heat Dissipation • High Dielectric Strength • Low Cost These precision stamped mica insulators provide good thermal conductivity: .009 watts per square inch per degree celsius per


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    p86-103 -07R5 -07R2 transistor p86 103 transistor transistor b 1655 593C a4696 TO-66 CASE PDF

    transistor b 1655

    Abstract: 97 transistor transistor 718 shoulder WASHER to220 mica
    Text: M60 Section 6 FREV2 11/23/11 12:17 PM Page 109 TRANSISTOR INSULATORS • Rapid Heat Dissipation • High Dielectric Strength • Low Cost These precision stamped mica insulators provide good thermal conductivity: .009 watts per square inch per degree celsius per inch in thickness.


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    2DC4672-13

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated 2DC4672 50V NPN SURFACE MOUNT TRANSISTOR IN SOT89 Features Mechanical Data • BVCEO > 50V  Case: SOT89  IC = 3A High Continuous Current  Case Material: Molded Plastic, “Green” Molding Compound  Low saturation voltage VCE sat < 350mV @ 1A


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    2DC4672 350mV 2DA1797 AEC-Q101 J-STD-020 MIL-STD-202, DS31636 2DC4672-13 PDF

    2DC4672

    Abstract: J-STD-020D 2DC4672-13
    Text: 2DC4672 NPN SURFACE MOUNT TRANSISTOR NEW PRODUCT Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • Epitaxial Planar Die Construction Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications


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    2DC4672 2DA1797) OT89-3L J-STD-020D MIL-STD-202, DS31636 2DC4672 J-STD-020D 2DC4672-13 PDF

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    Abstract: No abstract text available
    Text: 2DC4672 NPN SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • • Epitaxial Planar Die Construction Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications Complementary PNP Type Available 2DA1797


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    2DC4672 2DA1797) OT89-3L J-STD-020 MIL-STD-202, 05cknowledge DS31636 PDF

    TRANSISTOR 187

    Abstract: transistor b 1655 transistor on 4673 D 1062 transistor on BE 187 TRANSISTOR BE 187 TRANSISTOR ON 4673 187 transistor configuration+bel+187+transistor TRANSISTOR d 718
    Text: TRANSISTOR MICA INSULATORS ke ye lco .com • RAPID HEAT DISSIPATION • HIGH DIELECTRIC STRENGTH • NON-TOXIC • LOW COST • FROM STOCK These precision stamped mica insulators provide good thermal conductivity .009 watts per square inch per degree celsius per inch in


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    2DC4672

    Abstract: sot89 "NPN TRANSISTOR"
    Text: 2DC4672 NPN SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • • Epitaxial Planar Die Construction Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications Complementary PNP Type Available 2DA1797


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    2DC4672 2DA1797) OT89-3L J-STD-020 MIL-STD-202, DS31636 621-2DC4672-13 2DC4672-13 2DC4672 sot89 "NPN TRANSISTOR" PDF

    transistor b 1624

    Abstract: b 1624 transistor to66 mica TO-62 c 4663 4634 4705 to220 mica TO36 package 4683
    Text: TRANSISTOR MOUNTING KITS m • COMPLETE KITS OR INDIVIDUAL HARDWARE • PRE PACKAGED • UNIFORM HARDWARE AT LOW COST These pre-packaged universal mounting kits provide all the necessary hardware and insulators required to securely mount the semiconductor


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    TRANSISTOR T 927

    Abstract: 965 transistor transistor D 4515 transistor t13 transistor b 1655 0280 218 065 ASTM-D-4066 a 933 transistor ASTM-D4066
    Text: 1662-2012:QuarkCatalogTempNew 9/14/12 7:45 AM Page 1662 POWER ENCLOSURES INTERCONNECT TEST & MEASUREMENT 20 LED Spacers, Transistor Sockets, Kits and Insulators Transistor Mounting Kits TO-3 Transistor Sockets These pre-packaged universal mounting kits provide all the necessary hardware and insulators required to


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    Shoulder66 T-13/4 TRANSISTOR T 927 965 transistor transistor D 4515 transistor t13 transistor b 1655 0280 218 065 ASTM-D-4066 a 933 transistor ASTM-D4066 PDF

    CNY17F Fairchild

    Abstract: CNT17-3.300W Fairchild CNY17F2
    Text: 6-PIN DIP OPTOCOUPLERS FOR POWER SUPPLY APPLICATIONS NO BASE CONNECTION MOC8101 MOC8105 CNY17F-1 MOC8102 MOC8106 CNY17F-2 MOC8103 MOC8107 CNY17F-3 MOC8104 MOC8108 CNY17F-4 FEATURES The MOC810X and CNY17F-X devices consist of a gallium arsenide LED optically coupled


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    MOC8101 MOC8105 CNY17F-1 MOC810X CNY17F-X MOC8102 MOC8106 CNY17F-2 MOC8103 CNY17F Fairchild CNT17-3.300W Fairchild CNY17F2 PDF

    CNY17F Fairchild

    Abstract: No abstract text available
    Text: 6-PIN DIP OPTOCOUPLERS FOR POWER SUPPLY APPLICATIONS NO BASE CONNECTION MOC8101 MOC8105 CNY17F-1 MOC8102 MOC8106 CNY17F-2 MOC8103 MOC8107 CNY17F-3 MOC8104 MOC8108 CNY17F-4 FEATURES The MOC810X and CNY17F-X devices consist of a gallium arsenide LED optically coupled


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    MOC8101 MOC8105 CNY17F-1 MOC810X CNY17F-X MOC8102 MOC8106 CNY17F-2 MOC8103 CNY17F Fairchild PDF

    33SD

    Abstract: CNY17F-3 CNY17F Fairchild
    Text: 6-PIN DIP OPTOCOUPLERS FOR POWER SUPPLY APPLICATIONS NO BASE CONNECTION MOC8101 MOC8105 CNY17F-1 MOC8102 MOC8106 CNY17F-2 MOC8103 MOC8107 CNY17F-3 MOC8104 MOC8108 CNY17F-4 FEATURES The MOC810X and CNY17F-X devices consist of a gallium arsenide LED optically coupled


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    MOC8101 MOC8105 CNY17F-1 MOC810X CNY17F-X MOC8102 MOC8106 CNY17F-2 MOC8103 33SD CNY17F-3 CNY17F Fairchild PDF

    2SC4672

    Abstract: No abstract text available
    Text: h ~ 7 > y 3 > $ / T ransistors 2SC4672 i t ’ ^ y T fr -f Is - j - M NPN y ‘j 3 > Epitaxial Planar NPN Silicon Transistor 2SC 4672 b7> Freq. Power Amp. • ft* • £tfl£\t~j&III/Dimensions Unit : mm 1 ) V c e (sat) V ce (sat)= 0.35V (Max.) l.6±0.l


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    2SC4672 SC-62 PDF

    Sumida CD54-220

    Abstract: X752 transistor tic 2260 MAX752cpa
    Text: 19-4672; Rev 1;7/92 y n / i x i / n +5V/Adjustable Step-Up Current-M ode DC-DC Converters Features G e n e r a l D e s c rip tio n ♦ 200mA Load Currents Guaranteed with No External MOSFET The MAX731/MAX752 use current-mode pulse-width modulation PWM controllers to provide precise output


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    731/M 200mA 170kHz MAX731) MAX752) 16-Pin MAX731 MAX752 Sumida CD54-220 X752 transistor tic 2260 MAX752cpa PDF

    Sumida CD54-220

    Abstract: MAX752cpa
    Text: 19-4672: Rev 3; 3/96 y i / i / j x i w i + 5 V /A d ju s ta b le S te p -U p C u rre n t-M o d e D C-DC C o n v e rte rs The MAX731/MAX752 use current-mode pulse-width modulation PWM controllers to provide precise output regulation and low subharmonic noise Typical no-load


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    MAX731 MAX752 200mA. MAX731 Sumida CD54-220 MAX752cpa PDF

    MAX731

    Abstract: MAX731CWE MAX731MJA MAX752 MAX752CWE T Input Voltage 12V Output Voltage 110V 5A DC-DC Vout12V MAX752cpa
    Text: 19-4672; Rev2; 2/93 +5VIAdjustable Step-Up Current-Mode DC-DC Converters G eneral D escription T h e M A X 7 3 1 /M A X 7 5 2 use c u rre n t-m o d e p u ls e -w ld th m o d u la tio n P W M c o n tro lle rs to p ro v id e p re c is e o u tp u t re g u la tio n an d low s u b h a rm o n ic noise. T y p ica l n o -load


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    MAX731 MAX752 200mA, 200mA. AX731 MAX/52 MAX752CPA MAX731CWE MAX731MJA MAX752CWE T Input Voltage 12V Output Voltage 110V 5A DC-DC Vout12V PDF

    Untitled

    Abstract: No abstract text available
    Text: TRANSISTOR M ICA INSULATORS • RAPID HEAT DISSIPATION • HIGH DIELECTRIC STRENGTH • NON-TOXIC • LOW COST • FROM STOCK These precision stamped mica insulators provide good thermal conductivity .009 watts per square inch per degree Celsius per inch in


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    PDF

    TRANSISTOR 187

    Abstract: No abstract text available
    Text: TRANSISTOR M ICA INSULATORS • RAPID HEAT DISSIPATION • HIGH DIELECTRIC STRENGTH • NON-TOXIC • LOW COST • FROM STOCK These precision stamped mica insulators provide good thermal conductivity .009 watts per square inch per degree Celsius per inch in


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    H28iH TRANSISTOR 187 PDF

    Untitled

    Abstract: No abstract text available
    Text: TRANSISTOR MOUNTING KITS • COMPLETE KITS OR INDIVIDUAL HARDWARE • PRE PACKAGED • UNIFORM HARDWARE AT LOW COST These pre-packaged universal mounting kits provide all the necessary hardware and insulators required to securely mount the semiconductor to the chassis. Purchase the complete kit consisting of all hardware


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: TRANSISTOR MOUNTING KITS • COMPLETE KITS OR INDIVIDUAL HARDWARE • PRE PACKAGED • UNIFORM HARDWARE AT LOW COST These pre-packaged universal mounting kits provide all the necessary hardware and insulators required to securely mount the semiconductor to the chassis. Purchase the complete kit consisting of all hardware


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    transistors ON 4673

    Abstract: rfd16N10 lo16a
    Text: HA R R I S S E M I C O N D S E C T O R 2 ] H A R R MOE D • M 3 0 S 2 7 1 G.D3S375 ö M H A S I S August 1991 R F D 1 6 N 1 0 . R F D 1 6 N 1 0 S M N-Channel Enhancem ent Mode Power Field Effect Transistors MegaFETs Features Packages TO-2S1AA TOP VIEW • 16A, 100V


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    D3S375 RFD16N10 RFD16N10SM AN-7254 AN-7260. 003S37b RFD16N10, RFD16N10SM transistors ON 4673 lo16a PDF

    transistors ON 4673

    Abstract: 12N35 12N40
    Text: RFM 12N35 RFM 12N40 Sfj H a r r is N-Channel Enhancement Mode Power Field Effect Transistors A u g u st 1991 Features Packages TO -2Û 4A A • 12A , 3 5 0 V a n d 4 0 0 V BOTTOM VIEW • r D S on = O-Sn DRAIN (FLANGE) SOURCE • S O A is P o w e r-D is s ip a tio n L im ite d


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    12N35 12N40 92CS-3723« transistors ON 4673 12N40 PDF

    SN7489

    Abstract: LS 4704 sn7484
    Text: CIRCUIT TYPE SN7489 64-BIT READ/WRITE M EM O RY TTL LSI For Application as a "Scratch Pad" Memory w ith Nondestructive Read-Out Fully Decoded Memory Words of Four Bits Each J O R N D U A L -IN -L IN E OR W F L A T PACKAG E TOP V IE W * S E L E C T INPUTS


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    SN7489 64-BIT 12-mA 16-mA SN7484 g-234 LS 4704 PDF