ksr1012
Abstract: No abstract text available
Text: KSR2012 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In • Switching Circuit, Inverter, Interface circuit Driver circuit • Built in bias Resistor (R=47Kfi) • Complement to KSR1012 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic
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KSR2012
47Kfi)
KSR1012
100/iA,
7Tb4145
ksr1012
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47KQ
Abstract: KSR1007 KSR2007
Text: SAMSUNG SEMICONDUCTOR INC KSR1007 T“3SW \\;L4E | ^ ‘»ma 00Q70E7 0 | NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In TO -92 • Switching Circuit, Inverter, Interface circuit Driver circuit • Built in bias Resistor (R,=22K(], R2=47Kfi)
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KSR1007
KSR2007
47KQ
KSR2007
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marking CA
Abstract: CE 472M
Text: Ordering number : EN 4 7 2 1 I SA IVO 2SA1866 No.4721 PNP Epitaxial Planar Silicon Transistor Muting Circuits, Driver Applcations Featu res • On-chip bias resistors R1 = 47kfi, R2 = 47kft . • Very small-sized package making 2SA1866-applied sets small and slim.
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2SA1866
47kfi,
47kft)
2SA1866-applied
62094MT
AX-9000
472M/2
marking CA
CE 472M
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Untitled
Abstract: No abstract text available
Text: KSR1208 NPN EPITAXIAL SILICON TRAN SISTO R SWITCHING APPLICATION Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R, >47kfi. R j>22U ) • Complement to KSR2208 ABSOLUTE MAXIMUM RATINGS (TA=25t:)
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KSR1208
47kfi.
KSR2208
10/iA,
100/iA,
lc-100M
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sanyo 3076
Abstract: fc108
Text: Ordering number: EN 3076 FC108 No.3076 NPN Epitaxial Planar Silicon Composite Transistor Switching Applications Features • On-chip bias resistors Ri = 47ki2,R2 = 47kfi • Composite type with 2 transistors contained in the CP package currently in use, improving the
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FC108
47ki2
47kfi)
FC108
2SC3395,
sanyo 3076
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EN3279
Abstract: No abstract text available
Text: Ordering number : EN3279 r No.3279 FC125 PNP Epitaxial Planar Silicon Composite Transistor Switching Applications _ with Bias Resistance Features • On-chip bias resistance (R1 “ 47kfi) • Composite type with 2 transistors contained in the CP package currently in use, improving the
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EN3279
FC125
47kfi)
FC125
2SA1508,
30tly
EN3279
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MARKING GA
Abstract: 2SC4922 AX8876
Text: [O rdering number: EN4768 N o.4768 _ 2SC4922 N P N E pitaxial Planar Silicon Transistor SAXYO i Muting Circuit, Driver Applications F ea tu r es • High DC current gain. •On-chip bias resistance R l = 47kfi,R 2 = 47kf2 • Very sm all-sized package perm itting 2SC4922-applied sets to be made sm aller and slim m er.
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EN4768
2SC4922
47kft
47kft)
2SC4922-applied
MARKING GA
AX8876
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Marking S5j
Abstract: 47Kti KSR1112 KSR2112
Text: SAMSUNG SEMICONDUCTOR INCITES-1\i m e D | 7^41*45 OOQ^ObO .T | KSR1112 NPN EPITAXIAL SILICON TRANSÌSTOR SWITCHING APPLICATION Bias Resistor Built In SOT-23 • Switching Circuit, Inverter, Interface circuit Driver circuit • Built In bias Resistor (R=47Kfi)
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KSR1112
47Kti)
KSR2112
OT-23
Marking S5j
47Kti
KSR2112
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Untitled
Abstract: No abstract text available
Text: SIEMENS BCR 148 NPN Silicon Digital Transistor ►Switching circuit, inverter, interface circuit, driver circuit » Built in bias resistor Ri=47kfl, R2=47kfi Type Marking Ordering Code Pin Configuration BCR 148 WEs Q62702-C2261 1 =B Package 2= E 3=C SOT-23
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47kfl,
47kfi)
Q62702-C2261
OT-23
0235b05
Q12Q7b5
015D7bB
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Untitled
Abstract: No abstract text available
Text: SIEMENS BCR 116W NPN Silicon Digital Transistor »Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=4.7kfl, R2=47kfi _ 0_ LT t r Marking Ordering Code Pin Configuration BCR 116W WGs UPON INQUIRY 1= B Package LU
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47kfi)
OT-323
B35bG5
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Untitled
Abstract: No abstract text available
Text: SANYO SEMICONDUCTOR CORP 25E D 7 ^ 7 07k 0 0 0 7 3 b ö 7 FC105 T -3 7 -2 7 PNP Epitaxial Planar Silicon Composite Transìstor 2067 Switching Applications with Bias Resistances R 1=47kfi, R2=47kO 3073 Features • On-chip bias resistors (Ri = 47kft,R2= 47kfl)
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FC105
47kfi,
47kft
47kfl)
FC105
2SA1341,
4109TA
000731aÃ
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Untitled
Abstract: No abstract text available
Text: KSR1213 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In • Switching circuit, Inverter. Interface circuit Driver circuit • Built in bias Resistor(R,= 2.2K1!, Rj = 47Kfi) • Complement to KSR2213 ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
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KSR1213
47Kfi)
KSR2213
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Untitled
Abstract: No abstract text available
Text: PNP EPITAXIAL SILICON TRANSISTOR KSR2206 SWITCHING APPLICATION Bias Resistor Built In • Switching Circuit, Inverter, Interface circuit Driver circuit • Built in bias Resistor (R,=10Kft, R2=47KfI) • Com plem ent to KSR1206 ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
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KSR2206
10Kft,
47KfI)
KSR1206
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MARKING CODE T7s
Abstract: MARKINGCODET7s
Text: SIEM ENS BCR 166W PNP Silicon Digital Transistor >Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R-|=4.7kiî, R2=47kfi TT IF Type Marking Ordering Code Pin Configuration BCR 166W WTs UPON INQUIRY 1=B Package 2=E
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47kfi)
OT-323
fl235b05
623St30S
MARKING CODE T7s
MARKINGCODET7s
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3450K
Abstract: 3850K NTCCF2012
Text: Sensors SURFACE MOUNTABLE CHIP TYPE FEATURES • Reversible. • Automatic mounting possible with the use of bulks, magazines or tapes. • Cost reduction of circuits by high-density packaging is possible. NTCCS SÉRIES FOR REFLOW SOLDERING CHARACTERISTICS
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NTCCS2012
NTCCF2012
NTCCS3216
NTCCF3216
140mW/25
NTCCF32164AH683KC
NTCCF32164CH104KC
NTCCF32164CH154KC
33kfl±
100kfi
3450K
3850K
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STK4174MK2
Abstract: STK 100W STK4204MK2 K423 stk4234 2U27 stk*4234mk2 STK4234MK2 6-STK4234MK2 a11y
Text: KNa N 4 8 1 1 I ¡NO. 4 8 1 1 DO 193 X S T K 4 1 7 4 M K 40W f ti &<r>*-n # w s u s A V -t IK * X 2 — >*-t ^ £ 0 ZV tz£>, WM<n * >t* 7 •6„ STK4174M K2 ¿ , w O y 7*fr fr , v * . SM-, » W ¡* ffc -& ílífc * * » T & * . u - m in — 'J A F ' ' 7
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N4811
STK4174MK2
STK4174MK2
STK4105
PC13U
STK4174MK2cOVcc^
STK4174MK2tf
STK 100W
STK4204MK2
K423
stk4234
2U27
stk*4234mk2
STK4234MK2
6-STK4234MK2
a11y
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6V DC-AC Fluorescent lamp
Abstract: GC539 STK4N25
Text: *57 SGS-THOMSON ¡H ie r a « ! S T K 4 N 25 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E STK4N25 • . ■ . . V dss 250 V RDS on < 1.1 a Id 4 A TYPICAL RDS(on) = 1 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C
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STK4N25
STK4N25
OT-82
OT-194
OT-194
P032B
6V DC-AC Fluorescent lamp
GC539
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Untitled
Abstract: No abstract text available
Text: JUN 6 1991 L S I/ C S I: • ■ LS7210 >f! $ t = | Manufacturers of Custom and Standard L S I Circuits 1235 Walt Whitman Road, Melville, NY 11747-3086 • Tel.: 516 271-0400 • Fax: (516) 271-0405 • TWX: (510) 226-7833 Revised October 1990 PROGRAMMABLE DIGITAL DELAY TIMER
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LS7210
LS7211
LS72K
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Untitled
Abstract: No abstract text available
Text: TD62705P, 9 7 T l l f i n C D BIPO LAR DIGITAL INTEGRATED C IR C U IT SILIC O N M O NO LITHIC I UD£ I UOr Unit in mm TD62705P TD62706P HIGH VOLTAGE SOURCE CURRENT DRIVER HIGH VOLTAGE SOURCE CURRENT DRIVER Features • High Output Voltage ^ C C ^ O U T * ^ ^ Min.
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TD62705P,
TD62705P
TD62706P
TD62705P
47kfi
TD62706P
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Untitled
Abstract: No abstract text available
Text: ANALOG DEVICES □ Monolithic Thermocouple Amplifiers with Cold Junction Compensation AD594*/AD595* FEATURES Pretrim m ed for T y pe J AD594 or Type K (AD595) Th e rm o co u p le s C an Be U se d w ith Type T T h erm o co u ple Inp uts L o w Im pedance V o ltag e O utput: 10mV/°C
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AD594
/AD595*
AD594)
AD595)
10mV/Â
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LA1810
Abstract: HW-62A5 LA1811 mitsumi tuner fm if 10.7Mhz LA181 MA-7014 YT-30103 JYHZ RUF resistor LA1186
Text: Ordering number-EN2250C LA1810 NO.2250C SAiYO AM/FM/MPX Tuner System for RadioCassette Recorders, Qtfttçic Centers i ,#|k. Package Dimen^ás F u n ctions •FM-IF : IF amp, quadrature detector, soft muting, tuning indicator. • M PX : PLL stereo decoder, stereo indicator,
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number-EN2250C
2250C
LA1810
3067-DIP24S
DJP24S
LA1810
HW-62A5
LA1811
mitsumi tuner fm if 10.7Mhz
LA181
MA-7014
YT-30103
JYHZ
RUF resistor
LA1186
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Untitled
Abstract: No abstract text available
Text: T O SH IB A TLP1209 C7 ,TLP1221 (C7) TOSHIBA PHOTOINTERRUPTER INFRARED LED + PHOTO IC TLP1209(C7)f TLP122KC7) COPIER, PAGE PRINTER, FACSIMILE Unit in : mm AUTOMATIC VENDING MACHINE, TERM INAL EQUIPM ENT IN BANKING FACILITIES VARIOUS POSITION DETECTION SENSOR
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TLP1209
TLP1221
TLP122KC7)
TLP1209
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Untitled
Abstract: No abstract text available
Text: RN4906 RN4906 SW ITCHIN G , INVERTER CIRCUIT, INTERFACE CIRCUIT U n it in nun A N D DRIVER CIRCUIT APPLICATIONS. 2.1±0.1 •U 5 ± 0 .1 Including Two Devices in US6 (U ltra Super M ini Type w ith 6 leads) l/î 1C Ö |— L iT u> u> Ö W ith B uilt-in B ias Resistors
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RN4906
RN4906)
47kfi
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TDA4292
Abstract: tone control ic base treble circuit Stereo Tone Control ses 554 transistor bass treble control circuit stereo socket VS16 SWL01 4292
Text: TDA4292 Stereo Tone Control 1C with Base Width Switch DIP 24 Stereo tone control 1C for controlling the trebles, basses, balance, volume, physiology, bandwidth of the AF signals by the aid of dc voltages. It is in com pliance with the standards DIN 45500 and IEC 268-3.
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TDA4292
100Hz
10kHz
TDA4292
tone control ic
base treble circuit
Stereo Tone Control
ses 554
transistor bass treble control circuit
stereo socket
VS16
SWL01
4292
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