48 13ng mosfet
Abstract: 369C 369D NTD4813N NTD4813NT4G TF 241
Text: NTD4813N Power MOSFET 30 V, 40 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com
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Original
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NTD4813N
NTD4813N/D
48 13ng mosfet
369C
369D
NTD4813N
NTD4813NT4G
TF 241
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PDF
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48 13ng mosfet
Abstract: 48 13ng
Text: NTD4813N Power MOSFET 30 V, 40 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com
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Original
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NTD4813N
NTD4813N/D
48 13ng mosfet
48 13ng
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PDF
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13ng
Abstract: NTD4813N 4813NG NTD4813N-1G 369D 4813N 369ac
Text: NTD4813N Power MOSFET 30 V, 40 A, Single N-Channel, DPAK/IPAK Features •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThese are Pb-Free Devices http://onsemi.com
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Original
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NTD4813N
NTD4813N/D
13ng
NTD4813N
4813NG
NTD4813N-1G
369D
4813N
369ac
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PDF
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48 13ng mosfet
Abstract: 369D NTD4813N 4813ng
Text: NTD4813N Power MOSFET 30 V, 40 A, Single N-Channel, DPAK/IPAK Features •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThese are Pb-Free Devices http://onsemi.com
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Original
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NTD4813N
NTD4813N/D
48 13ng mosfet
369D
NTD4813N
4813ng
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PDF
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48 13ng mosfet
Abstract: NTD4813N
Text: NTD4813N Power MOSFET 30 V, 40 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com
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Original
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NTD4813N
NTD4813N/D
48 13ng mosfet
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PDF
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Untitled
Abstract: No abstract text available
Text: NTD4813N Power MOSFET 30 V, 40 A, Single N-Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices http://onsemi.com
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Original
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NTD4813N
NTD4813N/D
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PDF
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369D
Abstract: NTD4813N
Text: NTD4813N Power MOSFET 30 V, 40 A, Single N-Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices http://onsemi.com
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Original
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NTD4813N
NTD4813N/D
369D
NTD4813N
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PDF
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4813N
Abstract: No abstract text available
Text: NTD4813N Power MOSFET 30 V, 40 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com
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Original
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NTD4813N
NTD4813N/D
4813N
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PDF
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IN 4002 MIC diode
Abstract: MA47054 1N5719 equivalent ma-47266 1N5719 JANTX diode D 07-15 15
Text: M/A-COM SEMICONDnBRLNGTON ApKcm 11 D • SbM2E14 GD0113M T ■MIC Axial Lead PIN Diodes Features ■ GLASS HERMETIC SEALED PACKAGES ■ SCREENABLE TO JANTXV AND MILITARY SPECIFICATIONS ■ LARGE SIGNAL SWITCH DESIGN ■ LOW CAPACITANCE 0.1 pF PIN DIODES
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OCR Scan
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SbM2E14
GD0113M
IN 4002 MIC diode
MA47054
1N5719 equivalent
ma-47266
1N5719 JANTX
diode D 07-15 15
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PDF
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