mosfet 4800 circuit
Abstract: No abstract text available
Text: PD - 94364F IRF6603 HEXFET Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Conduction Losses l High Cdv/dt Immunity l Low Profile <0.7 mm l Dual Sided Cooling Compatible l Compatible with existing Surface Mount Techniques l Power MOSFET
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IRF6603
94364F
IRF6603
20-Jun-2012
mosfet 4800 circuit
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DirectFET
Abstract: marking code V6 73 DIODE
Text: PD - 94365E IRF6604 Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Conduction Losses l Low Switching Losses l Low Profile <0.7 mm l Dual Sided Cooling Compatible l Compatible with existing Surface Mount Techniques l HEXFET Power MOSFET
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IRF6604
94365E
IRF6604
20-Jun-2012
DirectFET
marking code V6 73 DIODE
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Untitled
Abstract: No abstract text available
Text: IRL6283MTRPbF DirectFET N-Channel Power MOSFET Applications •ORing, eFuse, and high current load switch •Load switch for battery application •Inverter switches for DC motor application Typical values unless otherwise specified VDSS
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IRL6283MTRPbF
J-STD-020Dâ
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Untitled
Abstract: No abstract text available
Text: IRL6283MTRPbF DirectFET N-Channel Power MOSFET Applications •ORing, eFuse, and high current load switch •Load switch for battery application •Inverter switches for DC motor application Typical values unless otherwise specified VDSS
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IRL6283MTRPbF
J-STD-020Dâ
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Untitled
Abstract: No abstract text available
Text: IRF9383MPbF DirectFET P-Channel Power MOSFET Typical values unless otherwise specified Applications VDSS l Isolation Switch for Input Power or Battery Application l High Side Switch for Inverter Applications VGS RDS(on) RDS(on) -30V max ±20V max 2.3mΩ@-10V 3.8mΩ@-4.5V
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IRF9383MPbF
315nC
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Untitled
Abstract: No abstract text available
Text: IRF9383MPbF DirectFET P-Channel Power MOSFET Typical values unless otherwise specified Applications VDSS l Isolation Switch for Input Power or Battery Application l High Side Switch for Inverter Applications VGS RDS(on) RDS(on) -30V max ±20V max 2.3mΩ@-10V 3.8mΩ@-4.5V
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IRF9383MPbF
315nC
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Untitled
Abstract: No abstract text available
Text: IRF8304MPbF DirectFET Power MOSFET RoHS Compliant and Halogen Free Typical values unless otherwise specified l Low Profile (<0.7 mm) VDSS VGS RDS(on) RDS(on) l Dual Sided Cooling Compatible 30V max ±20V max 1.7mΩ@ 10V 2.4mΩ@ 4.5V l Ultra Low Package Inductance
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IRF8304MPbF
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Untitled
Abstract: No abstract text available
Text: StrongIRFET IRL6283MTRPbF DirectFET N-Channel Power MOSFET Applications •ORing, eFuse, and high current load switch •Load switch for battery application •Inverter switches for DC motor application Typical values unless otherwise specified
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IRL6283MTRPbF
J-STD-020Dâ
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Untitled
Abstract: No abstract text available
Text: IRF9395MPbF DirectFET dual P-Channel Power MOSFET Typical values unless otherwise specified VDSS VGS RDS(on) RDS(on) -30V max ±20V max 5.3mΩ@-10V 9.0mΩ@-4.5V Applications l Isolation Switch for Input Power or Battery Application Features and Benefits
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IRF9395MPbF
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Untitled
Abstract: No abstract text available
Text: IRF9395MTRPbF DirectFET dual P-Channel Power MOSFET Typical values unless otherwise specified VDSS VGS RDS(on) RDS(on) -30V max ±20V max 5.3mΩ@-10V 9.0mΩ@-4.5V Applications l Isolation Switch for Input Power or Battery Application Features and Benefits
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IRF9395MTRPbF
JESD47Fâ
J-STD-020Dâ
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IRF6775MPbF
Abstract: No abstract text available
Text: IRF6775MTRPbF DIGITAL AUDIO MOSFET Features • Latest MOSFET Silicon technology • Key parameters optimized for Class-D audio amplifier applications • Low RDS on for improved efficiency • Low Qg for better THD and improved efficiency • Low Qrr for better THD and lower EMI
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IRF6775MTRPbF
IRF6775MPbF
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IRF8302M
Abstract: No abstract text available
Text: IRF8302MPbF l l l l l l l l l l l RoHs Compliant and Halogen-Free HEXFET Power MOSFET plus Schottky Diode Integrated Monolithic Schottky Diode Typical values unless otherwise specified Low Profile (<0.7 mm) VDSS VGS RDS(on) RDS(on) Dual Sided Cooling Compatible
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IRF8302MPbF
IRF8302M
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Untitled
Abstract: No abstract text available
Text: IRF8308MPbF DirectFET Power MOSFET RoHs Compliant Containing No Lead and Bromide Typical values unless otherwise specified l Low Profile (<0.7 mm) VDSS VGS RDS(on) RDS(on) l Dual Sided Cooling Compatible 30V max ±20V max 1.9mΩ@ 10V 2.7mΩ@ 4.5V
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IRF8308MPbF
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Untitled
Abstract: No abstract text available
Text: IRF8327SPbF l l l l l l l l l l DirectFET Power MOSFET RoHS Compliant and Halogen Free Typical values unless otherwise specified Low Profile (<0.7 mm) VDSS VGS RDS(on) RDS(on) Dual Sided Cooling Compatible 30V max ±20V max 5.1mΩ@ 10V 8.5mΩ@ 4.5V
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IRF8327SPbF
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Untitled
Abstract: No abstract text available
Text: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSAFX40N30A Features • • • • • • • 300 Volts 40 Amps 85 mΩ Ω Ultrafast body diode Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability
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MSAFX40N30A
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4800 mosfet
Abstract: mosfet 4800 1kw mosfet MC33091A 2N2222 MC33198 MC33198D MTP50N06 Application Report mosfet diagram 4800 power mosfet
Text: MOTOROLA MC33198 SEMICONDUCTOR TECHNICAL DATA Datasheet HIGH SIDE TMOS DRIVER Automotive High Side TMOS Driver SILICON MONOLITHIC INTEGRATED CIRCUIT The MC33198D is a high side TMOS driver, dedicated for automotive applications. It is used in conjunction with an external power MOSFET for
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MC33198
MC33198D
4800 mosfet
mosfet 4800
1kw mosfet
MC33091A
2N2222
MC33198
MTP50N06
Application Report mosfet diagram
4800 power mosfet
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23NM50N
Abstract: STL23NM50N
Text: STL23NM50N N-channel 500 V, 0.170 Ω typ., 14 A MDmesh II Power MOSFET in a PowerFLAT™ 8x8 HV package Datasheet — production data Features Type VDSS @ TJmax RDS on max ID STL23NM50N 550 V < 0.210 Ω 14 A (1) 3 3 3 "OTTOM VIEW ' $ 1. The value is rated according to Rthj-case
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STL23NM50N
STL23NM50N
23NM50N
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ID100
Abstract: MSAFX40N30A
Text: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSAFX40N30A Features • • • • • • • 300 Volts 40 Amps 85 mΩ Ω Ultrafast body diode Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability
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MSAFX40N30A
ID100
MSAFX40N30A
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chn 714
Abstract: No abstract text available
Text: Microsemi m m m Santa Ana, CA Progress Powered b y Technology m 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSAFX40N30A Features 300 Volts 40 Amps Ultrafast body diode Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability
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OCR Scan
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MSAFX40N30A
chn 714
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Untitled
Abstract: No abstract text available
Text: AUIRF8736M2TR AUTOMOTIVE GRADE Automotive DirectFET Power MOSFET • V BR DSS RDS(on) typ. max. ID (Silicon Limited) Qg Advanced Process Technology Optimized for Automotive Motor Drive, DC-DC and other Heavy Load Applications Exceptionally Small Footprint and Low Profile
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AUIRF8736M2TR
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Untitled
Abstract: No abstract text available
Text: IRF7171MTRPbF DirectFET Power MOSFET Typical values unless otherwise specified Applications and Benefits Ideal for High Performance Isolated Converter Primary Switch Optimized for Synchronous Rectification RoHS Compliant, Halogen Free
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IRF7171MTRPbF
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Untitled
Abstract: No abstract text available
Text: StrongIRFET IRF7480MTRPbF DirectFET N-Channel Power MOSFET Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier applications
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IRF7480MTRPbF
JESD47Fâ
J-STD-020Dâ
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Untitled
Abstract: No abstract text available
Text: StrongIRFET IRF7580MTRPbF DirectFET N-Channel Power MOSFET Application Brushed motor drive applications BLDC motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier applications
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IRF7580MTRPbF
IRF75onâ
JESD47Fâ
J-STD-020Dâ
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PDF
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Untitled
Abstract: No abstract text available
Text: StrongIRFET IRF7580MTRPbF DirectFET N-Channel Power MOSFET Application Brushed motor drive applications BLDC motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier applications
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IRF7580MTRPbF
IRF75
J-STD-020Dâ
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