Untitled
Abstract: No abstract text available
Text: M-Bond 610 Micro-Measurements Strain Gage Adhesive OTHER ACCESSORIES USED IN AN M-BOND 610 INSTALLATION: • CSM Degreaser or GC-6 Isopropyl Alcohol Silicon-Carbide Paper M-Prep Conditioner A M-Prep Neutralizer 5A GSP-1 Gauze Sponges
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GT-14
005mm]
27-Apr-11
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curing
Abstract: instruction bulletin b-130 cure GT-14 M-BOND 600
Text: M-Bond 600 Vishay Micro-Measurements Strain Gage Adhesive OTHER ACCESSORIES USED IN AN M-BOND 600 INSTALLATION: • CSM Degreaser or GC-6 Isopropyl Alcohol • Silicon-Carbide Paper • M-Prep Conditioner A • • • • • • • M-Prep Neutralizer 5A
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GT-14
08-Apr-05
curing
instruction bulletin b-130
cure
M-BOND 600
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GT-14
Abstract: dupont mylar M-BOND 610
Text: M-Bond 610 Vishay Micro-Measurements Strain Gage Adhesive OTHER ACCESSORIES USED IN AN M-BOND 610 INSTALLATION: • • • • • • • • • • CSM Degreaser or GC-6 Isopropyl Alcohol Silicon-Carbide Paper M-Prep Conditioner A M-Prep Neutralizer 5A
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GT-14
005mm]
08-Apr-05
dupont mylar
M-BOND 610
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Untitled
Abstract: No abstract text available
Text: M-Bond 600 Micro-Measurements Strain Gage Adhesive OTHER ACCESSORIES USED IN AN M-BOND 600 INSTALLATION: • CSM Degreaser or GC-6 Isopropyl Alcohol Silicon-Carbide Paper M-Prep Conditioner A M-Prep Neutralizer 5A GSP-1 Gauze Sponges
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GT-14
27-Apr-11
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tetra-etch
Abstract: MR1-350-130 Gore tetra etch PCT-2M 430-FST 136-awp 134-AWP MR1-350-127 M-line accessories MCA-2 EPOXYLITE 813
Text: VISHAY INTERTECHNO L O G Y , INC . INTERACTIVE data book strain gage accessories vishay micro-measurements vse-db0065-0707 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents
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vse-db0065-0707
tetra-etch
MR1-350-130
Gore tetra etch
PCT-2M
430-FST
136-awp
134-AWP
MR1-350-127
M-line accessories MCA-2
EPOXYLITE 813
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PEEL programming
Abstract: 22CV10Z-25 22CV10 22CV10A-10 PEEL22CV10 22CV10A PEEL 22CV10A-15 22CV10A-7 22GV10
Text: PEEL 22GV10 Z A M SEMICONDUCTORS CMOS Programmable Electrically Erasable Logic Device i February 1993 Features General Description Advanced CMOS EEPROM Technology High Performance with Low Power Consumption The AMI PEEL22C V10(Z) is a CMOS Program m able
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22CV10
PEEL programming
22CV10Z-25
22CV10A-10
PEEL22CV10
22CV10A PEEL
22CV10A-15
22CV10A-7
22GV10
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ICT 18CV8
Abstract: No abstract text available
Text: Commercial/ Industrial INC. PEEL 18CV8 -5/-7/-10/-15/-25 CMOS Programmable Electrically Erasable Logic Device Features • Multiple Speed Power, Temperature Options Architectural Flexibility - Vcc = 5 Volts ±10% - Speeds ranging from 5ns to 25 ns - Power as low as 37mA at 25MHz
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18CV8
25MHz
20-pin
ICT 18CV8
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mb8287
Abstract: MB8287-25 00M010
Text: April 1990 Edition 2.0 FUJITSU DATA SHEET : MB8287-25/-35 CMOS 288K-BIT HIGH-SPEED SRAM 32K Words x 8 Bits Static Random Access Memory with Automatic Power Down The Fujitsu MB8287 is a 32,768 words x 8 bits static random access mem ory with parity generator and checker, and fabricated with CMOS technology. To obtain a
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MB8287-25/-35
288K-BIT
MB8287
MB8287-25
MB8287-35
T-32P-M
008uu
F32004S
00M010
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Untitled
Abstract: No abstract text available
Text: •> GOULD AMI CMOS Programmable Electrically Erasable Logic Array Device Ptellmlaary Data • Semiconductors PEEL PA7040 General D escription User-Configurable High Density Logic Array • Create multi-level l/O-buried logic circuits • Over 120 sum-of-products functions
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PA7040
155mA
13ns/20ns
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22CV10AP
Abstract: 22cv10 nte quick cross ict peel 18CV8J palce programmer schematic blackjack vhdl code PA7140J-20 INTEL PLD910 PALCE610
Text: Data Book General Information PEEL Arrays PEEL Devices Special Products and Services Development Tools Application Notes and Reports Package Information PLACE Users Manual_ Introduction to PLACE PLACE Installation Getting Started with PLACE Operation Reference Guide
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MB8298
Abstract: FPT-28P-M02
Text: September 1990 Edition 1.0 FUJITSU DATA SHEET MB8298-25/-35 CMOS 256K-BIT HIGH-SPEED SRAM 32K Words x 8 Bits High-Speed Static Random Access Memory The Fujitsu MB8298 is a high-speed static random access memory organized as 32,768 words x 8 bits and fabricated with CMOS technology. To obtain a smaller chip
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MB8298-25/-35
256K-BIT
MB8298
450-mil
MB8298-35
28-LEAD
LCC-28P-M04)
FPT-28P-M02
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PEEL20CG10
Abstract: PALC20G10
Text: AMI PEEL 20CG10 SEMICONDUCTORS CMOS Programmable Electrically Erasable Logic Device Features February 1993 General Description The AMI PEEL20CG10 is a CMOS Programmable Electrically Erasable Logic device that provides a highperformance, low-power, reprogrammable,
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20CG10
PEEL20CG10
480Kn
PALC20G10
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Untitled
Abstract: No abstract text available
Text: PA7024 PEEL Am y •> GOULD AM I. Prelim inary Data Sheet ■>Sem iconductors PA7024 Features • Logic Integration and Customization of: — PLDs, SSI/MSI, random logic, decoders, encoders, muxes, comparators, shifters, counters, state machines, etc. • User-Configurable High Density Logic Array
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PA7024
140mA
PA7024-2
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MB8298
Abstract: No abstract text available
Text: September 1990 Edition 1.0 FUJITSU DATA SHEET MB8298-25/-35 CMOS 256K-BIT HIGH-SPEED SRAM 32K Words x 8 Bits High-Speed Static Random Access Memory The Fujitsu MB8298 is a high-speed static random access memory organized as 32,768 words x 8 bits and fabricated with CMOS technology. To obtain a smaller chip
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OCR Scan
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MB8298-25/-35
256K-BIT
MB8298
450-mil
F28011S-4C
MB8298-25
MB8298-35
28-LEAD
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Untitled
Abstract: No abstract text available
Text: s a _ F U IIT S U DATASHEET * MB8287-25/-35 CMOS 288K-BIT HIGH-SPEED SRAM 32K Words x 8 Bits Static Random Access Memory with Automatic Power Down The Fujitsu MB8287 is a 32,768 words x 8 bits static random access memory with
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MB8287-25/-35
288K-BIT
MB8287
MB8287-25
MB8287-35
32-LEAD
DIP-32P-M02)
FPT-32P-M02)
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pin diagram and block diagram of 74ls74
Abstract: TTL 74LS74 Micron TLC 74ls74 timing setup hold pin DIAGRAM OF IC 74ls74
Text: nn.„ n r u u u lu AMI • Semiconductors CMOS Programmable Electrically Erasable Logic Amy Device Preliminary Data PEEL PA7040 General Description Features U ser-C o n fig u ra b le High D ensity Lo g ic A rray • • • • Create multi-level l/O-buried logic circuits
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PA7040
PA7040
PA7040s
pin diagram and block diagram of 74ls74
TTL 74LS74
Micron TLC
74ls74 timing setup hold
pin DIAGRAM OF IC 74ls74
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