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    4810N Search Results

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    4810N Price and Stock

    Traco Power TEN-6-4810N

    DC DC CONVERTER 3.3V 4W
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TEN-6-4810N Tube 10 1
    • 1 $21.56
    • 10 $19.818
    • 100 $18.215
    • 1000 $17.17174
    • 10000 $17.17174
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    Traco Power THD-15-4810N

    DC DC CONVERTER 3.3V 13W
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    DigiKey THD-15-4810N Tube 10 1
    • 1 $51.2
    • 10 $46.601
    • 100 $42.8306
    • 1000 $37.36248
    • 10000 $37.36248
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    Traco Power THD-10-4810N

    DC DC CONVERTER 3.3V 8.9W
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    DigiKey THD-10-4810N Tube 10 1
    • 1 $28.3
    • 10 $25.364
    • 100 $23.3125
    • 1000 $19.9
    • 10000 $19.9
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    Infineon Technologies AG D4810N22TVFXPSA1

    DIODE GEN PURP 2.2KV 4810A
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    DigiKey D4810N22TVFXPSA1 Tray 3 1
    • 1 $723.42
    • 10 $723.42
    • 100 $723.42
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    Avnet Americas D4810N22TVFXPSA1 Tray 24 Weeks 2
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    EBV Elektronik D4810N22TVFXPSA1 25 Weeks 2
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    CONTA-CLIP Inc 2481.0N

    75P,6MM,UNIV.INSUL.EXT.JUMPER
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2481.0N Box 5
    • 1 -
    • 10 $15.376
    • 100 $15.376
    • 1000 $15.376
    • 10000 $15.376
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    4810N Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    4810NG

    Abstract: No abstract text available
    Text: 4810N Power MOSFET 30 V, 54 A, Single N−Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com V(BR)DSS


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    NTD4810N NTD4810N/D 4810NG PDF

    4810NG

    Abstract: 4810N
    Text: 4810N Power MOSFET 30 V, 54 A, Single N-Channel, DPAK/IPAK Features •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThese are Pb-Free Devices http://onsemi.com


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    NTD4810N 10mplicable NTD4810N/D 4810NG 4810N PDF

    PPAP

    Abstract: 4810N
    Text: 4810N, 4810N Power MOSFET 30 V, 54 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses AEC−Q101 Qualified and PPAP Capable − 4810N


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    NTD4810N, NVD4810N AEC-Q101 NTD4810N/D PPAP 4810N PDF

    Untitled

    Abstract: No abstract text available
    Text: 4810N, 4810N Power MOSFET 30 V, 54 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses AEC−Q101 Qualified and PPAP Capable − 4810N


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    NTD4810N, NVD4810N NTD4810N/D PDF

    10NHG

    Abstract: 369D NTD4810NH NTD4810NHT4G
    Text: 4810NH Power MOSFET 30 V, 54 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Low RG These are Pb−Free Devices


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    NTD4810NH NTD4810NH/D 10NHG 369D NTD4810NH NTD4810NHT4G PDF

    Untitled

    Abstract: No abstract text available
    Text: 4810NH Power MOSFET 30 V, 54 A, Single N−Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Low RG These are Pb−Free Devices http://onsemi.com


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    NTD4810NH NTD4810NH/D PDF

    369D

    Abstract: NTD4810NH 10NHG
    Text: 4810NH Power MOSFET 30 V, 54 A, Single N-Channel, DPAK/IPAK Features •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăLow RG •ăThese are Pb-Free Devices


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    NTD4810NH NTD4810NH/D 369D NTD4810NH 10NHG PDF

    4810NG

    Abstract: 369D NTD4810N NTD4810NT4G
    Text: 4810N Power MOSFET 30 V, 54 A, Single N−Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com RDS(on) MAX


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    NTD4810N NTD4810N/D 4810NG 369D NTD4810N NTD4810NT4G PDF

    Untitled

    Abstract: No abstract text available
    Text: 4810N Power MOSFET 30 V, 54 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


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    NTD4810N NTD4810N/D PDF

    369D

    Abstract: NTD4810NH
    Text: 4810NH Power MOSFET 30 V, 54 A, Single N-Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Low RG These are Pb-Free Devices http://onsemi.com


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    NTD4810NH NTD4810NH/D 369D NTD4810NH PDF

    fast page mode dram controller

    Abstract: DRAM Controller for the MC68340 asynchronous dram DRAM controller mach schematic MC68340 mach memory controller Static Column & Page-Mode Detector A20-A11
    Text: Designing a Page-Mode DRAM Controller Using MACH Devices Application Note Designing a Page-Mode DRAM Controller Using MACH Devices INTRODUCTION The three major parts of many digital systems consist of processor, memory and control logic including input/output functions. When implementing these systems, a well-designed memory


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    16ms/device fast page mode dram controller DRAM Controller for the MC68340 asynchronous dram DRAM controller mach schematic MC68340 mach memory controller Static Column & Page-Mode Detector A20-A11 PDF

    4810NG

    Abstract: 4810N 369D NTD4810N
    Text: 4810N Power MOSFET 30 V, 54 A, Single N-Channel, DPAK/IPAK Features •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThese are Pb-Free Devices http://onsemi.com


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    NTD4810N NTD4810N/D 4810NG 4810N 369D NTD4810N PDF

    Untitled

    Abstract: No abstract text available
    Text: 4810NH Power MOSFET 30 V, 54 A, Single N-Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Low RG These are Pb-Free Devices


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    NTD4810NH NTD4810NH/D PDF

    DRAM Controller for the MC68340

    Abstract: DRAM controller MC68340 mach memory controller
    Text: Designing a Page-Mode DRAM Controller Using MACH Devices February 2002 Introduction The three major parts of many digital systems consist of processor, memory and control logic including input/output functions. When implementing these systems, a well-designed memory controller usually determines overall system performance. Each system requires the proprietary memory control specification such as memory map allocation. There are many factors designers must consider when implementing a memory controller, i.e., reliability, fast


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    PDF

    4810NG

    Abstract: 369D NTD4810N 369AA-01
    Text: 4810N Power MOSFET 30 V, 54 A, Single N-Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices http://onsemi.com


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    NTD4810N NTD4810N/D 4810NG 369D NTD4810N 369AA-01 PDF

    fr3c

    Abstract: No abstract text available
    Text: DALLAS SEMICONDUCTOR FEATURES PRELIMINARY DS21Q44 Enhanced QUAD E1 FRAMER FUNCTIONAL DIAGRAM • Four E1 CEPT or PCM-30 /ISDN-PRI framing transceivers • All four framers are fully independent; transmit and receive sections of each framer are fully independent


    OCR Scan
    DS21Q44 PCM-30) fr3c PDF