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    4884 MOSFET Search Results

    4884 MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK424G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK423G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK422G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation

    4884 MOSFET Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Cycle10s

    Abstract: mode 5 IFF L-band RF MOSFET transistor AZ 1
    Text: The innovative Semiconductor Company! HVV1012-250 High Voltage, High Ruggedness L-Band Avionics Pulsed Power Transistor 1025-1150 MHz, 10 s Pulse, 1% Duty Cycle For Airborne DME, TCAS and IFF Applications TM Features • Silicon MOSFET Technology • Operation from 24V to 50V


    Original     		HVV1012-250 EG-01-DS09A 429-HVVi Cycle10s mode 5 IFF L-band RF MOSFET transistor AZ 1 PDF

    j152

    Abstract: RF MOSFET CLASS AB L-Band 1200-1400 MHz 1030mhz HVV1214-100 5919CC-TB-7
    Text: The innovative Semiconductor Company! HVV1214-100 HIGH VOLTAGE, HIGH RUGGEDNESS L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200 s Pulse, 10% Duty Cycle For Ground Based Radar Applications TM FEATURES • Silicon MOSFET Technology • Operation from 24V to 50V


    Original     		HVV1214-100 429-HVVi EG-01-DS06B j152 RF MOSFET CLASS AB L-Band 1200-1400 MHz 1030mhz 5919CC-TB-7 PDF

    L-Band 1200-1400 MHz

    Abstract: 4884 MOSFET HVV1214-100 radar circuit L-band RF MOSFET SEMICONDUCTORS INC 1200-1400 429 transistor 4884+MOSFET
    Text: The innovative Semiconductor Company! HVV1214-100 High Voltage, High Ruggedness L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200 s Pulse, 10% Duty For Ground Based Radar Applications TM Features • Silicon MOSFET Technology • Operation from 24V to 50V


    Original     		HVV1214-100 EG-01-DS06A 429-HVVi L-Band 1200-1400 MHz 4884 MOSFET radar circuit L-band RF MOSFET SEMICONDUCTORS INC 1200-1400 429 transistor 4884+MOSFET PDF

    UHF TRANSISTOR

    Abstract: J152-ND J151-ND RF MOSFET CLASS AB Coaxicom transistor SMD g 28 100B100JP500X RC1206JR-07100KL smd transistor 259 4404 mosfet
    Text: The innovative Semiconductor Company! HVV0405-175 HIGH VOLTAGE, HIGH RUGGEDNESS UHF Pulsed Power Transistor 420-470 MHz, 300µs Pulse, 10% Duty Cycle For UHF band, Weather and Long Range Radar Applications TM FEATURES • Silicon MOSFET Technology • Operation from 24V to 50V


    Original     		HVV0405-175 429-HVVi EG-01-DS10B 05/XX/09 UHF TRANSISTOR J152-ND J151-ND RF MOSFET CLASS AB Coaxicom transistor SMD g 28 100B100JP500X RC1206JR-07100KL smd transistor 259 4404 mosfet PDF

    mode 5 IFF

    Abstract: HVV1011-300 diode gp 429 hvvi "RF MOSFET" 300W 1030mhz hvv1011 1090mhz RF 1090MHz
    Text: The innovative Semiconductor Company! HVV1011-300 High Voltage, High Ruggedness L-Band Avionics Pulsed Power Transistor 1030/1090 MHz, 50µs Pulse, 5% Duty For TCAS, IFF and Mode-S Applications TM Features • Silicon MOSFET Technology • Operation from 24V to 50V


    Original     		HVV1011-300 429-HVVi EG-01-DS02A EG-01-DS02A5 mode 5 IFF diode gp 429 hvvi "RF MOSFET" 300W 1030mhz hvv1011 1090mhz RF 1090MHz PDF

    capacitor 10uF/63V

    Abstract: capacitor 220uF/63V J152 100 pf, ATC Chip Capacitor pF CAPACITOR 100v 100b*500x 10uf 63v capacitor capacitor 1206 63V ID Innovations resistor smd 1206 102
    Text: The innovative Semiconductor Company! HVV0912-150 HIGH VOLTAGE, HIGH RUGGEDNESS L-Band Avionics Pulsed Power Transistor 960-1215 MHz, 10µs Pulse, 10% Duty Cycle For Ground and Air DME, TCAS and IFF Applications TM FEATURES • Silicon MOSFET Technology • Operation from 24V to 50V


    Original     		HVV0912-150 429-HVVi EG-01-DS11B capacitor 10uF/63V capacitor 220uF/63V J152 100 pf, ATC Chip Capacitor pF CAPACITOR 100v 100b*500x 10uf 63v capacitor capacitor 1206 63V ID Innovations resistor smd 1206 102 PDF

    mode 5 IFF

    Abstract: Coaxicom HVV1011-300 RF 1090MHz hvvi 4884 MOSFET hvv1011 RF MOSFET CLASS AB 100B270JP500X ATC FXT00
    Text: The innovative Semiconductor Company! HVV1011-300 High Voltage, High Ruggedness L-Band Avionics Pulsed Power Transistor 1030/1090 MHz, 50µs Pulse, 5% Duty For TCAS, IFF and Mode-S Applications TM Features • Silicon MOSFET Technology • Operation from 24V to 50V


    Original     		HVV1011-300 429-HVVi EG-01-DS02B EG-01-DS02B8 mode 5 IFF Coaxicom RF 1090MHz hvvi 4884 MOSFET hvv1011 RF MOSFET CLASS AB 100B270JP500X ATC FXT00 PDF

    capacitor 10uF/63V

    Abstract: ds10a capacitor 100uF 50V capacitor 1206 63V hex head screws 10uf 63v capacitor AB-45 banana socket datasheet diode gp 429 SMD 1206 RESISTOR 100 OHMS
    Text: The innovative Semiconductor Company! HVV0405-175 High Voltage, High Ruggedness UHF Pulsed Power Transistor 400-500 MHz, 300 s Pulse, 10% Duty Cycle For UHF band, Weather and Long Range Radar Applications TM Features • Silicon MOSFET Technology • Operation from 24V to 50V


    Original     		HVV0405-175 EG-01-DS10A 429-HVVi capacitor 10uF/63V ds10a capacitor 100uF 50V capacitor 1206 63V hex head screws 10uf 63v capacitor AB-45 banana socket datasheet diode gp 429 SMD 1206 RESISTOR 100 OHMS PDF

    ERJ8GEYJ100V

    Abstract: Johanson Technology C1206C102K1RACTU C1206C103K1RACTU 445-4109-2-ND 478-2666-1-ND 251R15S
    Text: HVV1012-250 High Voltage, High Ruggedness L-Band Avionics Pulsed Power Transistor 1025-1150 MHz, 10µs Pulse, 1% Duty Cycle For Airborne DME, TCAS and IFF Applications FEATURES The innovative Semiconductor Company! Silicon MOSFET Technology Operation from 24V to 50V


    Original     		HVV1012-250 429-HVVi EG-01-DS09B ERJ8GEYJ100V Johanson Technology C1206C102K1RACTU C1206C103K1RACTU 445-4109-2-ND 478-2666-1-ND 251R15S PDF

    HVV1214-140

    Abstract: L-Band 1200-1400 MHz SMD TRANSISTOR PD4 radar circuit ERJ8GEYJ100V L-band RF MOSFET 1030mhz "RF MOSFET CLASS AB
    Text: HVV1214-140 Preliminary Datasheet L-Band Pulsed Power Transistor 1200-1400 MHz, 200µs Pulse, 10% Duty Cycle For Ground Based Radar Applications The innovative Semiconductor Company! FEATURES Silicon MOSFET Technology Operation from 24V to 50V High Power Gain


    Original     		HVV1214-140 429-HVVi EG-01-PO22X1 HVV1214-140 L-Band 1200-1400 MHz SMD TRANSISTOR PD4 radar circuit ERJ8GEYJ100V L-band RF MOSFET 1030mhz "RF MOSFET CLASS AB PDF

    AIRBORNE DME

    Abstract: transistor SMD 12W MOSFET transistor SMD 12W smd transistor code 12w RF Transistor S10-12
    Text: FEATURES ! GE PACKAGE Silicon MOSFET Technology Operation from 24V to 50V High Power Gain Extreme Ruggedness Internal Input and Output Matching Excellent Thermal Stability All Gold Bonding Scheme Pb-free and RoHS Compliant TYPICAL PERFORMANCE Table 1: Typical RF Performance in broadband text fixture at 25°C temperature with


    Original     		HVV1012-550 1025MHz 1150MHz. AIRBORNE DME transistor SMD 12W MOSFET transistor SMD 12W smd transistor code 12w RF Transistor S10-12 PDF

    uhf 150w mosfet

    Abstract: 10uF CAPACITOR 1210 PACKAGE capacitor 10uF/63V smd transistor EK 10uf 63v capacitor 50V 1215MHZ banana socket datasheet capacitor 220uF/63V diode gp 429 DS2346
    Text: The innovative Semiconductor Company! HVV0912-150 High Voltage, High Ruggedness L-Band Avionics Pulsed Power Transistor 960-1215 MHz, 10 s Pulse, 10% Duty Cycle For Ground and Air DME, TCAS and IFF Applications TM Features • Silicon MOSFET Technology • Operation from 24V to 50V


    Original     		HVV0912-150 121eliable. EG-01-DS11A or429-HVVi uhf 150w mosfet 10uF CAPACITOR 1210 PACKAGE capacitor 10uF/63V smd transistor EK 10uf 63v capacitor 50V 1215MHZ banana socket datasheet capacitor 220uF/63V diode gp 429 DS2346 PDF

    transistor SMD 12W MOSFET

    Abstract: transistor SMD 12W transistor JE 1090 smd transistor code 12w
    Text: H GE PACKAGE FEATURES Silicon MOSFET Technology Operation from 24V to 50V High Power Gain Extreme Ruggedness Internal Input and Output Matching Excellent Thermal Stability All Gold Bonding Scheme Pb-free and RoHS Compliant TYPICAL PERFORMANCE High voltage vertical technology is well suited for high power pulsed applications in the


    Original     		HVV1011-600 1030MHz 1090MHz. transistor SMD 12W MOSFET transistor SMD 12W transistor JE 1090 smd transistor code 12w PDF

    full bridge mosfet smps

    Abstract: IRF AN1001 AN1001 IRFBA22N50A SMPS MOSFET mosfet 500v 23a
    Text: PD-91886A IRFBA22N50A PROVISIONAL SMPS MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High Speed Power Switching Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic


    Original     		PD-91886A IRFBA22N50A AN1001) Super-220TM O-273AA) full bridge mosfet smps IRF AN1001 AN1001 IRFBA22N50A SMPS MOSFET mosfet 500v 23a PDF

    032J

    Abstract: AN1001 IRFBA22N50A bridge rectifier diode 500V
    Text: PD-91886A International IGR Rectifier IRFBA22N50A PROVISIONAL SMPS MOSFET Applications • Switch Mode Power Supply SMPS • Uninterruptible Power Supply • High Speed Power Switching Benefits • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic


    OCR Scan     		PD-91886A IRFBA22N50A AN1001) Super-220â O-273AA) 032J AN1001 IRFBA22N50A bridge rectifier diode 500V PDF

    4884 MOSFET data

    Abstract: AN1001 IRFBA22N50A 4.5V TO 100V INPUT REGULATOR
    Text: PD-91866B IRFBA22N50A SMPS MOSFET HEXFET Power MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High Speed Power Switching Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic


    Original     		PD-91866B IRFBA22N50A AN1001) Super-220TM O-273AA) 4884 MOSFET data AN1001 IRFBA22N50A 4.5V TO 100V INPUT REGULATOR PDF

    transistor tt 2170

    Abstract: AN569 MTP50P03HDL motorola cm 340 a transistor p50p0
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTP50P03HDL HDTM O S E -FE T ™ P o w er Field E ffe c t T ran sisto r Motorola Preferred Device P-Channel Enhancement-Mode Silicon Gate TMOS POWER FET LOGIC LEVEL 50 AMPERES 30 VOLTS RDS on = 0.025 OHM


    OCR Scan     		MTP50P03HDL 0E-05 0E-04 OE-03 0E-02 0E-01 transistor tt 2170 AN569 MTP50P03HDL motorola cm 340 a transistor p50p0 PDF

    LP2951A

    Abstract: REF-10 SC1480 SC1480ITSTR
    Text: SC1480 DDR Memory Power Supply Controller POWER MANAGEMENT Description Features The SC1480 is a single output, constant on-time synchronous-buck, pseudo fixed frequency, PWM controller intended for use in notebook computers and other battery operated portable devices. Features


    Original     		SC1480 SC1480 TSSOP-14 LP2951A REF-10 SC1480ITSTR PDF

    LP2951A

    Abstract: REF-10 SC1480 SC1480ITSTR ZHCS400 regulator 431L marking 14v ,5v smps schematic
    Text: SC1480 DDR Memory Power Supply Controller POWER MANAGEMENT Description Features The SC1480 is a single output, constant on-time synchronous-buck, pseudo fixed frequency, PWM controller intended for use in notebook computers and other battery operated portable devices. Features


    Original     		SC1480 SC1480 TSSOP-14 LP2951A REF-10 SC1480ITSTR ZHCS400 regulator 431L marking 14v ,5v smps schematic PDF

    sc148

    Abstract: No abstract text available
    Text: SC1480 DDR Memory Power Supply Controller POWER MANAGEMENT Description Features The SC1480 is a single output, constant on-time synchronous-buck, pseudo-fixed frequency, PWM controller intended for use in notebook computers and other battery operated portable devices. Features


    Original     		SC1480 sc148 PDF

    Untitled

    Abstract: No abstract text available
    Text: SC1480 DDR Memory Power Supply Controller POWER MANAGEMENT Description Features The SC1480 is a single output, constant on-time synchronous-buck, pseudo fixed frequency, PWM controller intended for use in notebook computers and other battery operated portable devices. Features


    Original     		SC1480 SC1480 TSSOP-14 PDF

    JESD51-1

    Abstract: JESD51-2 JESD51-7 SC1480 SC1480ITSTR SC1480ITSTRT WJA11
    Text: SC1480 DDR Memory Power Supply Controller POWER MANAGEMENT Description Features The SC1480 is a single output, constant on-time synchronous-buck, pseudo-fixed frequency, PWM controller intended for use in notebook computers and other battery operated portable devices. Features


    Original     		SC1480 SC1480 MO-153, TSSOP-14 JESD51-1 JESD51-2 JESD51-7 SC1480ITSTR SC1480ITSTRT WJA11 PDF

    LP2951A

    Abstract: REF-10 SC1480 SC1480ITSTR SI4484
    Text: 5+"& DDR Memory Power Supply Controller POWER MANAGEMENT Description Features The SC1480 is a single output, constant on-time synchronous-buck, pseudo fixed frequency, PWM controller intended for use in notebook computers and other battery operated portable devices. Features


    Original     		SC1480 TSSOP-14 LP2951A REF-10 SC1480ITSTR SI4484 PDF

    MAX1909

    Abstract: No abstract text available
    Text: SC1480 NOT RECOMMENDED FOR NEW DESIGN DDR Memory Power Supply Controller POWER MANAGEMENT Description Features The SC1480 is a single output, constant on-time synchronous-buck, pseudo-fixed frequency, PWM controller intended for use in notebook computers and


    Original     		SC1480 MO-153, TSSOP-14 MAX1909 PDF